TYPES 2N5060 THRU 2N5064, TIC60 THRU TIC64 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS SILECTt THYRISTORS! 800 mA DC e 30 thru 200 VOLTS mechanical data These thyristors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting MIL-STD-202C method 1068. The thyristors are insensitive to light. THE GATE LEAO 1S CONNECTED AP REGION +0.005 0,050 (NOTE A) + 0.160 _ooas oon +0.005 = 0.020 4 0.500 + 0.008 + -_tt 4 7 ANODE 0.100 {26.005 i ra Gate Nv. CATHODE 6800 MIN. 0.000.054 43 uaps ooi7 + O88? NOTES: A, Lead diameter is not controfled in this area, CGA B. All dimensions are in inches. *ALL JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE absolute maximum ratings at specified case temperature 2NS060 | 2N5061| 2N5062/ 2NS063 | 2N5064 UNIT TIC6O | TICGT | TICG2 | TICE3 | TICE4 Repetitive Peak Off-State Voltage, Vo Rm (See Note 1) 65C to 125C} 30 60 100 150 200 Vv * Repetitive Peak Reverse Voltage, VRRM 65C to 128C} 30 60 100 150 200 | Vv *Nonrepatitive Peak Reverse Voltage, Vasu (Pulse Width < 5 ms) 65C to 125C 45 80 125 180 230 Vv Continuous On-State Current (See Note 2) 68C to 50C 800 mA * Average On-State Current (180 Conduction Angle, See Note 3} 65C to 67C 510 mA Surge On-State Current (See Note 4) 25C 6 A Peak Positive Gate Current (Pulse Width < 300 us, f < 120 pps) 25C 1 A Peak Gate Reverse Voltage 65C to 125C 5 Vv * Average Gate Power Dissipation (See Note 5) 25C 10 mw *Peak Gate Power Dissipation (Pulse Width < 300 us) . 25C 400 mw *Operating Case Temperature Range 65 to 125 c Storage Tamperature Range -65 to 150 C *Lead Temperature 1/16 Inch from Case for 10 Seconds 230 C NOTES: 1. These values apply when tha gate-cathode resistance Ray = 1kS. 2. These values apply for continuous d-c operation with resistive load. Above 50C derate according to Figure 1. 3. This value may 6e applied continuously under single-phase 60-Hz half-sine-wave operation with resistive joad. Above 67C derate according to Figure 1, 4. This value applies for ons 60-Hz half sine wave when the device is operating at (or below) rated values of peak reverse voltage and on-state current, Surge may be repeated after the device has returned to original thermal equilibrium. 5. This vaiue applies for a maximum averaging time of 16.6 ms. *JEDEC registered data. The asterisk identifies JEDEC registered data for the 2N5060 through 2N5064 only. This data sheet contains all applicable registered data in effect at the time of publication. t Trademark of Texas Instruments U,S. Patent No. 3,439,238 TEXAS INSTRUMENTS 2-347TYPES 2N5060 THRU 2N5064, TIC60 THRU TIC64 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS electrical characteristics at specified case temperature 2N5060 THRU | TIC60 THRU PARAMETER TEST CONDITIONS 2N5064 TIC64 UNIT f MIN MAX | MIN MAX lornm Repetitive Peak Off-State Current Vp = Rated Vpram. RGK = 1k2 | 125C s0* 50 {| WA IRAM Repetitive Peak Reverse Current Vp = Rated VaRM. RGK = 1k | 125C 50" 50 | uA . VAA=7V, Ry = 1002, |-65C 350 t Gate Trigger Current A GT & Trigger Curr RGk = 1k, tpig) 2 1ms | 25C 200 200 | Vaaz7V, RL = 100.2, |-65C 1.2 . Rox = tk], pig) 2 1 ms IBC a8 08 VGT Gate Trigger Volt P GT Mare Trigger Wowoge Vp = Rated Vpam, A= 1008, | oot Ot v Rok = 1k2, tpig) 2 1 ms . . Vaaz=7V. = 1ka, |-65C * IH Holding Current AA | ' RGK 128 = 10 mA Initiating lz = 20 mA 25C 5 Vtm_ Peak On-State Voltage ITM = 1.24, See Note 6 25C 1.7" 1.7 v *thermal characteristics PARAMETER . MAX UNIT Rejc Junction-to-Case Thermal Resistance 75 CW NOTE 6: This parameter must be measured using pulse techniques. ty = 300 us, duty cycle < 1%. Voltage-sensing contacts, separate from the current-carrying contacts, are located within 0.125 inch from the device body. *JEDEC registered data THERMAL INFORMATION AVERAGE ANODE FORWARD CURRENT DERATING CURVE 1000 900 800 700 Conduction Angle Continuous DC 600 500 400 300 200 100 'F(av) Maximum Average Anode Forward CurrentmA 0 25 50 75 100 125 ToCase TemperatureC FIGURE 1 2-348 TEXAS INSTRUMENTSTYPES 2N5060 THRU 2N5064, TIC6O0 THRU TICG4 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS TYP | UNIT . Vaa = 30V, RL= 392, REKfeff) = 20k, -On- 3 s tgt Gate-Controlied Turn-On-Time Vin=20V, See Figure 2 we Vv. =30V, RL =302, | =TA, tq Circuit-Commutated Turn-Off Time AA . L RM 7 BS See Figure 3 PARAMETER MEASUREMENT INFORMATION v2 0 V1 0 s 'T INPUT vn \ leo PU in 50% R f _lAM ' ra tgt a . 1 OUTPUT ' go 9% Vr 0 v N R ( 1 | be tg WAVEFORMS VOLTAGE WAVEFORMS RCS 3 = L$ 0.1 uF > Vaa * 30V 4 te 5 uF 4 See Notes A, B, and C RGK (effi INPUT nema {4 GENERATOR TEST CIRCUIT FIGURE 2GATE-CONTROLLED TURN-ON TIME NOTES: Vin is measured with gate and cathode terminalis open. moogmp "b+ t+ Vaa * 30 V To Thyristor Under Test PO (See Note C) Vq Monitor yn See Note F 1k2 { Roktetfh Monitor See Note E O12 (Noninductive See Note E v1 Monitor Resistor) nh Generator Synchronization TEST CIRCUIT FIGURE 3-CIRCUIT-COMMUTATED TURN-OFF TIME . The input waveform of Figure 2 has the following characteristics: tp < 40 ns, ty, > 20 us. . Waveforms are monitored on ay oscilloscope with the following characteristics: t; 14 ns, Rin # 10 MQ, Cin < 12 pF. - RGK(etf) includes the total resistance of the generator and the external resistor. . Pulse generators for V4 and V2 are synchronized to provide an anode current waveform with the following characteristics: tw = 50 to 300 us, duty cycle = 1%. The pulse widths of V4 and V2 are > 10 us. n - Resistor Ry is adjusted for IR 7 A. TEXAS INSTRUMENTS 2-349TYPES 2N5060 THRU 2N5064, TIC60 THRU TICG4 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE v CASE TEMPERATURE CASE TEMPERATURE 1000 pe Fay 1 a 09 Vaat7V RL = 1002 <q > 08 RGK = 1k8 z & o7 tpig) # 1 ms 3 06 5 & os 2 0s 2 5 6 9 o3 be b 2 2 02 01 0.4 0 -75 -80 -25 -75 ~60 -25 0 2 50 75 100 125 Tc~Case TemperatureC TeCase TemperatureC FIGURE 4 FIGURE 5 HOLDING CURRENT vs CASE TEMPERATURE 40 7 4 J s 3 2 3 3 7 ) o7 a4 ~78 -80 -25 0 26 80 75 100 126 TcGase Temperature"C FIGURE 6 PEAK ON.STATE VOLTAGE GATE-CONTROLLED TURN-ON TIME we ws PEAK ON-STATE CURRENT GATE CURRENT 2 5 To 18 Sea Note 6 a 7 16 Ea # bus F 2 e > 42 53 2 e G1 2 5 os 22 i & 06 i 3 z 04 8 1 tpig) > 10 ws 02 B To = 25C . Figure 2 0 6 - oF 02 O48 07 1 2 4 02 03 040506 08 1 2 tTMPeak On-State CurrentA IgGate CurrentmA FIGURE 7 FIGURE 8 NOTE 6: This parameter must be measured using pulse techniques. ty, = 300 ys, duty cycie < 2%. Voltage-sensing contacts, separate from the current-carrying contacts, are located within 0.125 inch from the device body. TI cannot ossume ony responsibility for any circyits shown 2-350 TEXAS INST RUM ENTS or represent thet they are free from patent infringement. TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.THYRISTOREN THYRISTORS Typ It VoRM ITSM IGT max type A Vv A mA 2N 3001 0,35 30 6 0,02 2N 3002 0,35 60 6 0,02 2N 3003 0,35 100 6 0,02 2N 3004 0,35 200 6 0,02 2N 3005 0,35 30 6 0,2 2N 3006 0,35 60 6 0,2 2N 3007 0,35 100 6 0,2 2N 3008 0,35 a 200 6 0,2 TIC 44 0,6 30 6 0,2 TIC 45 0,6 60 6 0,2 TIC 46 0,6 100 6 0,2 TIC 47 0,6 am 200 6 0,2 TIC 60 0,8 30 6 0,2 TIC 61 0,8 60 6 0,2 TIC 62 08 100 6 0,2 TIC 63 0,8 150 6 0,2 TIC 64 08 200 6 0,2 2N 5060 08 30 6 0,2 2N 5061 0,8 60 6 0,2 2N 5062 0,8 100 6 0,2 2N 5063 08 150 6 0,2 2N 5064 0,8 <= 200 6 0,2 2N 1595 1 50 15 10 2N 1596 1 100 15 10 2N 1597 i 200 15 10 2N 1598 1 300 15 10 2N 1599 1 400 15 10 TI 145 AO 1,6 50 30 25 T1145 A1 1,6 100 30 25 T1145 A2 1,6 200 30 25 TI 145 A3 1,6 300 30 25 TI 145 A4 1,6 400 30 25 TIC 39 Y 2 30 20 0,2 TIC 39 F 2 50 20 0,2 TIC 339A 2 100 20 0,2 TIC 39B 2 200 20 0,2 TIC 39C 2 300 20 0,2 TIC 39D 2 400 20 0,2 TIC 106 Y 5 30 30 0,2 TIC 106 F 5 50 30 0,2 TIC 106A 5 100 30 0,2 TIC 106 B 5 200 30 0,2 TIC 106 C 5 300 30 0,2 TIC 106 D 5 400 30 0,2 TIC 116 Siehe Datenblatt Seite 2-155; See Data Sheet Page 2-155 TIC 126 Siehe Datenblatt Seite 2-155; See Data Sheet Page 2-155 TIC 236 Siehe Datenblatt Seite 2-165; See Data Sheet Page 2-165 TIC 246 Siehe Datenblatt Seite 2-165; See Data Sheet Page 2-165 TIC 253 Siehe Datenblatt Seite 2-167; See Data Sheet Page 2-167 TIC 263 Siehe Datenblatt Seite 2-167; See Data Sheet Page 2-167 3-18 TEXAS INSTRUMENTSVGT max tH max VT max @ Gehause Vv mA Vv package 0,7 3 1,2 TO-18 0,7 3 1,2 TO-18 0,7 3 1,2 TO-18 0,7 3 1,2 TO-18 0,8 5 1,2 TO-18 0,8 5 1,2 TO-18 08 5 1,2 TO-18 08 5 1,2 TO-18 0,8 5 1,4 Silect 08 5 14 Silect 0,8 5 1,4 Silect 0,8 5 14 Silect 0,8 5 17 TO-92 0,8 5 7 TO-92 0,8 5 1,7 TO-92 2,8 5 1,7 TO-92 2,8 5 1,7 TO-92 3,8 5 1,7 TO-92 1,8 5 1,7 TO-92 2,8 5 1,7 TO-92 1,8 5 1,7 TO-92 3,8 5 1,7 TO-92 3 25 2 TO0-5 3 25 2 TO-5 3 25 2 TO-5 3 25 2 TO-5 3 25 2 TO-5 3,5 25 2 TO-5 35 25 2 TO-5 3,5 25 2 TO-5 3,5 25 2 TO-5 3,5 25 2 TO-5 1 5 1,75 TO-39 | 5 1,75 TO-39 | 5 1,75 TO-39 \ 5 1,75 TO-39 1 5 1,75 TO-39 I 5 1,75 TO-39 I 5 1,7 TO-66P | 5 1,7 TO-66P | 5 1,7 TO-66P | 5 1,7 TO-66P 4 5 4,7 TO-66P I 5 1,7 TO-66P TEXAS INSTRUMENTS 3-19