DATA SH EET
Product specification
Supersedes data of 1999 Apr 26 2000 Nov 15
DISCRETE SEMICONDUCTORS
BC846T; BC847T series
NPN general purpose transistors
M3D173
2000 Nov 15 2
Philips Semiconductors Product specification
NPN general purpose transistors BC846T; BC847T series
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification, especially
in portable equipment.
DESCRIPTION
NPN general purpose transistor in an SC-75 (SOT416)
plastic package.
PNP complements: BC856T; BC857T series.
MARKING
PINNING
TYPE NUMBER MARKING CODE
BC846AT 1A
BC846BT 1B
BC847AT 1E
BC847BT 1F
BC847CT 1G
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
MAM348
1
2
3
Top view
12
3
Fig.1 Simplified outline (SC-75; SOT416) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC846AT; BC846BT 80 V
BC847AT; BC847BT; BC847CT 50 V
VCEO collector-emitter voltage open base
BC846AT; BC846BT 65 V
BC847AT; BC847BT; BC847CT 45 V
VEBO emitter-base voltage open collector 5V
I
Ccollector current (DC) 100 mA
ICM peak collector current 200 mA
IBM peak base current 100 mA
Ptot total power dissipation Tamb 25 °C; note 1 150 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
2000 Nov 15 3
Philips Semiconductors Product specification
NPN general purpose transistors BC846T; BC847T series
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air; note 1 833 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB =30V; I
E=0 −−15 nA
VCB =30V; I
E= 0; Tj= 150 °C−−5µA
I
EBO emitter cut-off current VEB =5V; I
C=0 −−100 nA
hFE DC current gain VCE =5V; I
C=2mA
BC846AT; BC847AT 110 220
BC846BT; BC847BT 200 450
BC847CT 420 800
VCEsat collector-emitter saturation
voltage IC= 10 mA; IB= 0.5 mA; −−200 mV
IC= 100 mA; IB= 5 mA; note 1 −−400 mV
VBE base-emitter voltage IC= 2 mA; VCE = 5 V 580 700 mV
IC= 10 mA; VCE =5V −−770 mV
Cccollector capacitance VCB = 10 V; f = 1 MHz; IE=i
e=0 −−1.5 pF
Ceemitter capacitance VEB = 0.5 V; f = 1 MHz; IC=i
c=0 11 pF
fTtransition frequency IC= 10 mA; VCE = 5 V; f = 100 MHz 100 −−MHz
F noise figure VCE =5V; I
C= 200 µA; RS=2k;
f = 1 kHz; B = 200 Hz −−10 dB
2000 Nov 15 4
Philips Semiconductors Product specification
NPN general purpose transistors BC846T; BC847T series
GRAPHICAL INFORMATION BC847AT
handbook, halfpage
MGT723
10111010
2103
IC (mA)
0
400
300
200
100
hFE
(1)
(2)
(3)
Fig.2 DC current gain; typical values.
VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
MGT724
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
VBE
(mV)
(1)
(2)
(3)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
VCE =5V.
(1) Tamb =55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
handbook, halfpage
103
102
10
MGT725
10111010
2103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB= 20.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
MGT726
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB= 10.
(1) Tamb =55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
2000 Nov 15 5
Philips Semiconductors Product specification
NPN general purpose transistors BC846T; BC847T series
GRAPHICAL INFORMATION BC847BT
handbook, halfpage
MGT727
10111010
2103
IC (mA)
0
600
500
400
300
200
100
hFE (1)
(2)
(3)
Fig.6 DC current gain; typical values.
VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
0
1200
1000
800
600
400
200
MGT728
10210111010
2103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
VCE =5V.
(1) Tamb =55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
handbook, halfpage
104
103
102
10
MGT729
10111010
2103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB= 20.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
MGT730
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB= 10.
(1) Tamb =55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
2000 Nov 15 6
Philips Semiconductors Product specification
NPN general purpose transistors BC846T; BC847T series
GRAPHICAL INFORMATION BC847CT
handbook, halfpage
MGT731
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
hFE
(1)
(2)
(3)
Fig.10 DC current gain; typical values.
VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
0
1200
1000
800
600
400
200
MGT732
10210111010
2103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
VCE =5V.
(1) Tamb =55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
handbook, halfpage
104
103
102
10
MGT733
10111010
2103
IC (mA)
VCEsat
(mV)
(1)
(2)(3)
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB= 20.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
MGT734
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB= 10.
(1) Tamb =55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
2000 Nov 15 7
Philips Semiconductors Product specification
NPN general purpose transistors BC846T; BC847T series
PACKAGE OUTLINE
UNIT A1
max bpcDEe
1H
EL
pQw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1 0.30
0.15 0.25
0.10 1.8
1.4 0.9
0.7 0.5
e
11.75
1.45 0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
SOT416 SC-75
wM
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
EAB
B
vMA
0 0.5 1 mm
scale
A
0.95
0.60
c
X
12
3
Plastic surface mounted package; 3 leads SOT416
97-02-28
2000 Nov 15 8
Philips Semiconductors Product specification
NPN general purpose transistors BC846T; BC847T series
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS PRODUCT
STATUS DEFINITIONS (1)
Objective specification Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of anyoftheseproducts,conveysnolicence or title
under any patent, copyright, or mask work right to these
products,andmakesnorepresentations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2000 Nov 15 9
Philips Semiconductors Product specification
NPN general purpose transistors BC846T; BC847T series
NOTES
2000 Nov 15 10
Philips Semiconductors Product specification
NPN general purpose transistors BC846T; BC847T series
NOTES
2000 Nov 15 11
Philips Semiconductors Product specification
NPN general purpose transistors BC846T; BC847T series
NOTES
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2000 70
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Printed in The Netherlands 613514/03/pp12 Date of release: 2000 Nov 15 Document order number: 9397 750 07524