MJD2955, NJVMJD2955T4G(PNP) MJD3055, NJVMJD3055T4G(NPN) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Electrically Similar to MJE2955 and MJE3055 DC Current Gain Specified to 10 Amperes High Current Gain-Bandwidth Product - fT = 2.0 MHz (Min) @ IC = 500 mAdc Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These are Pb-Free Packages* DPAK CASE 369C STYLE 1 IPAK CASE 369D STYLE 1 MARKING DIAGRAMS AYWW J xx55G DPAK A Y WW Jxx55 G AYWW J xx55G IPAK = Assembly Location = Year = Work Week = Device Code x = 29 or 30 = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 February, 2012 - Rev. 12 1 Publication Order Number: MJD2955/D MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Max Unit VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5 Vdc IC 10 Adc IB 6 Adc 20 0.16 W W/C 1.75 0.014 W W/C -55 to +150 C Collector Current Base Current Total Power Dissipation @ TC = 25C Derate above 25C PD{ Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C PD Operating and Storage Junction Temperature Range TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Case Characteristic RqJC 6.25 C/W Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 71.4 C/W 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 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Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. http://onsemi.com 2 MHz MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) ORDERING INFORMATION Package Type Package Shipping MJD2955G DPAK (Pb-Free) 369C 75 Units / Rail MJD2955-1G IPAK (Pb-Free) 369D 75 Units / Rail MJD2955T4G DPAK (Pb-Free) 369C 2,500 Tape & Reel NJVMJD2955T4G DPAK (Pb-Free) 369C 2,500 Tape & Reel MJD3055G DPAK (Pb-Free) 369C 75 Units / Rail MJD3055T4G DPAK (Pb-Free) 369C 2,500 Tape & Reel NJVMJD3055T4G DPAK (Pb-Free) 369C 2,500 Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) TYPICAL CHARACTERISTICS PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 125 150 T, TEMPERATURE (C) Figure 1. Power Derating 2 500 100 VCE = 2 V 0.7 0.5 25C -55C 50 30 20 0.02 0.05 0.1 0.5 0.2 1 2 5 10 0 0.1 0.2 0.4 0.6 1 2 Figure 2. DC Current Gain Figure 3. Turn-On Time 4 6 5 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 3 2 TJ = 25C 1 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2 V 0.4 0.2 0.06 0.1 IC, COLLECTOR CURRENT (AMP) t, TIME (s) V, VOLTAGE (VOLTS) 0.6 td @ VBE(off) 5 V IC, COLLECTOR CURRENT (AMP) 1 0.8 0.1 0.03 0.02 1.4 1.2 tr 0.3 0.2 0.07 0.05 10 5 0.01 TJ = 25C VCC = 30 V IC/IB = 10 1 TJ = 150C t, TIME (s) hFE , DC CURRENT GAIN 300 200 ts 0.7 0.5 0.3 0.2 tf 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 1 2 3 5 0.07 0.05 0.06 0.1 10 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 4. "On" Voltages, MJD3055 Figure 5. Turn-Off Time http://onsemi.com 4 2 4 6 MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) 2 TJ = 25C 1.6 V, VOLTAGE (VOLTS) VCC +30 V 25 ms RC +11 V 0 1.2 SCOPE RB -9 V VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 3 V D1 51 tr, tf 10 ns DUTY CYCLE = 1% -4 V 0.4 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1 2 3 IC, COLLECTOR CURRENT (AMP) D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 10 5 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 6. "On" Voltages, MJD2955 1 0.7 0.5 Figure 7. Switching Time Test Circuit D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.05 0.02 0.01 0.03 0.02 P(pk) RqJC(t) = r(t) RqJC RqJC = 6.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1k Figure 8. Thermal Response FORWARD BIAS SAFE OPERATING AREA INFORMATION IC, COLLECTOR CURRENT (AMP) 10 5 3 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 9 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100ms 1 1ms 0.5 0.3 5ms 0.1 dc WIRE BOND LIMIT THERMAL LIMIT TC = 25C (D = 0.1) SECOND BREAKDOWN LIMIT 0.05 0.03 0.02 0.01 0.6 500ms TJ = 150C 1 2 20 4 6 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 60 Figure 9. Maximum Forward Bias Safe Operating Area http://onsemi.com 5 MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 --- MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) PACKAGE DIMENSIONS IPAK CASE 369D-01 ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 A S 1 2 DIM A B C D E F G H J K R S V Z Z 3 -T- SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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