Document Number: 93756 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 03-Jun-08 1
Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A
T..RIA Series
Vishay High Power Products
FEATURES
• Electrically isolated base plate
• Types up to 1200 VRRM
• 3500 VRMS isolating voltage
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL E78996 approved
• RoHS compliant
• Designed and qualified for industrial level
DESCRIPTION
These series of T-modules are intended for general purpose
applications such as battery chargers, welders and plating
equipment, regulated power supplies and temperature and
speed control circuits. The semiconductors are electrically
isolated from the metal base, allowing common heatsinks
and compact assemblies to be built.
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) 50 A/70 A/90 A
D-55
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS T50RIA T70RIA T90RIA UNITS
IT(AV) 70 °C 50 70 90 A
IT(RMS) 80 110 141 A
ITSM
50 Hz 1310 1660 1780 A
60 Hz 1370 1740 1870
I2t50 Hz 8550 13 860 15 900 A2s
60 Hz 7800 12 650 14 500
I2√t 85 500 138 500 159 100 A2√s
VRRM Range 100 to 1200 V
TJ- 40 to 125 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND PEAK
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM/IDRM MAXIMUM
AT TJ = 25 °C
µA
T50RIA
T70RIA
T90RIA
10 100 150
100
20 200 300
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93756
2Revision: 03-Jun-08
T..RIA Series
Vishay High Power Products Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS T50RIA T70RIA T90RIA UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave
50 70 90 A
70 70 70 °C
Maximum RMS on-state current IT(RMS) 80 110 141 A
Maximum peak, one-cycle
on-state, non-repetitive
surge current
ITSM
t = 10 ms No voltage
reapplied
Sine half wave,
initial TJ = TJ maximum
1310 1660 1780
A
t = 8.3 ms 1370 1740 1870
t = 10 ms 100 % VRRM
reapplied
1100 1400 1500
t = 8.3 ms 1150 1460 1570
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
8550 13 860 15 900
A2s
t = 8.3 ms 7800 12 650 14 500
t = 10 ms 100 % VRRM
reapplied
6050 9800 11 250
t = 8.3 ms 5520 8950 10 270
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 85 500 138 500 159 100 A2√s
Low level value of
threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum 0.97 0.77 0.78
V
High level value of
threshold voltage VT(TO)2 (I > π x IT(AV)), TJ maximum 1.13 0.88 0.88
Low level value of
on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum 4.1 3.6 2.9
mΩ
High level value of
on-state slope resistance rt2 (I > π x IT(AV)), TJ maximum 3.3 3.2 2.6
Maximum on-state voltage drop VTM
ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square
Average power = VT(TO) x IT(AV) + rf x (IT(RMS))21.60 1.55 1.55 V
Maximum forward voltage drop VFM
ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square
Average power = VT(TO) x IT(AV) + rf x (IT(RMS))21.60 1.55 1.55 V
Maximum holding current IHAnode supply = 6 V, initial IT = 30 A, TJ = 25 °C 200 200 200
mA
Maximum latching current IL
Anode supply = 6 V, resistive load = 10 Ω
Gate pulse: 10 V, 100 µs, TJ = 25 °C 400 400 400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgd
TJ = 25 °C, Vd = 50 % VDRM, ITM = 50 A
Ig = 500 mA, tr ≤ 0.5, tp ≥ 6 µs 0.9
µsTypical reverse recovery time trr TJ = 125 °C, ITM = 50 A, tp = 300 µs, dI/dt = 10 A/µs 3
Typical turn-off time tq
TJ = TJ maximum, ITM = 50 A, tp = 300 µs
-dI/dt = 15 A/µs, VR = 100 V, linear to 80 % VDRM
110
Document Number: 93756 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 03-Jun-08 3
T..RIA Series
Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A Vishay High Power Products
Note
(1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. T90RIA80S90
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum 15 mA
RMS isolation voltage VISOL 50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s 3500 V
Critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum, linear to 80 % rated VDRM (1) 500 V/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS T50RIA T70RIA T90RIA UNITS
Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10 12 12
W
Maximum average
gate power PG(AV) TJ = TJ maximum, f = 50 Hz 2.5 3 3
Maximum peak gate current IGM
TJ = TJ maximum, tp ≤ 5 ms
2.5 3 3 A
Maximum peak
negative gate voltage -VGT 10 10 10 V
Maximum required
DC gate voltage to trigger VGT
TJ = - 40 °C
Anode supply = 6 V,
resistive load; Ra = 1 Ω
4.0 4.0 4.0
VTJ = 25 °C 2.5 2.5 2.5
TJ = TJ maximum 1.5 1.5 1.5
Maximum required
DC gate current to trigger IGT
TJ = - 40 °C 250 270 270
mATJ = 25 °C 100 120 120
TJ = TJ maximum 50 60 60
Maximum gate voltage
that will not trigger VGD
TJ = TJ maximum, rated VDRM applied
0.2 0.2 0.2 V
Maximum gate current
that will not trigger IGD 5.0 6.0 6.0 mA
Maximum rate of rise of
turned-on current dI/dt
VD = 0.67 rated VDRM, ITM = 2 x rated dI/dt
Ig = 400 mA for T50RIA and Ig = 500 mA for T70RIA/T90RIA;
tr < 0.5 µs, tp ≥ 6 µs
For repetitive value use 40 % non-repetitive
Per JEDEC STD. RS397, 5.2.2.6
200 200 200
A/µs
180 180 180
160 160 160
150 150 150
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93756
4Revision: 03-Jun-08
T..RIA Series
Vishay High Power Products Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A
Note
(1) A mounting compund is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS T50RIA T70RIA T90RIA UNITS
Maximum junction operating
temperature range TJ- 40 to 125
°C
Maximum storage
temperature range TStg - 40 to 150
Maximum thermal resistance,
junction to case per junction RthJC DC operation 0.65 0.50 0.38
K/W
Maximum thermal resistance,
case to heatsink RthCS Mounting surface, smooth, flat and greased 0.2
Mounting torque, ± 10 %
to heatsink Non-lubricated
threads
M3.5 mounting screws (1) 1.3 ± 10 %
Nm
terminals M5 screw terminals 3 ± 10 %
Approximate weight 54 g
Case style T-module D-55
ΔR CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
T50RIA 0.08 0.10 0.13 0.19 0.31 0.06 0.10 0.14 0.20 0.32
K/WT70RIA 0.07 0.08 0.10 0.14 0.24 0.05 0.08 0.11 0.15 0.24
T90RIA 0.05 0.06 0.08 0.12 0.20 0.04 0.06 0.09 0.12 0.20
Document Number: 93756 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 03-Jun-08 5
T..RIA Series
Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A Vishay High Power Products
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
50
60
70
80
90
100
110
120
130
0 102030405060
30°
60° 90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
T50RIA.. Series
R (DC) = 0.65 K/W
thJC
50
60
70
80
90
100
110
120
130
0 1020304050607080
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
T50RIA.. Series
R (DC) = 0.65 K/W
thJC
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
0.3K
/W
10 K/W
5K/W
3K/W
2K/W
1.5K/W
1K/W
0.7K/W
0.5K/W
R=0
.1K
/W-DeltaR
thSA
0
10
20
30
40
50
60
70
80
01020304050
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
T50RIA.. Series
T = 125°C
J
020406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.1K/W-DeltaR
thSA
5K/W
3K/W
2K/W
1.5K/W
1K/W
0.7K/W
0.5K/W
0.3K/W
0
10
20
30
40
50
60
70
80
90
100
110
0 1020304050607080
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
T50RIA.. Series
T = 125°C
J
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93756
6Revision: 03-Jun-08
T..RIA Series
Vishay High Power Products Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
500
600
700
800
900
1000
1100
1200
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
T50RIA.. Series
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
J
500
600
700
800
900
1000
1100
1200
1300
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
T50RIA.. Series
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T50RIA.. Series
T = 125°C
J
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b) (a)
Tj=25 °C
Tj=125 °C
Tj=- 40 °C
(1) (2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
Rectangular gate pulse (1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
<=30% rated di/dt : 20V, 65ohms
tr=1µs, tp>=6µs
T50RIA.. Series Frequency Limited by PG(AV)
rated di/dt : 20V, 30ohms;
tr=0.5µs, tp>=6µs
(3) (4)
Document Number: 93756 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 03-Jun-08 7
T..RIA Series
Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A Vishay High Power Products
Fig. 9 - Current Ratings Characteristics Fig. 10 - Current Ratings Characteristics
Fig. 11 - On-State Power Loss Characteristics
Fig. 12 - On-State Power Loss Characteristics
50
60
70
80
90
100
110
120
130
0 1020304050607080
30° 60°
90° 120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
T70RIA.. Series
R (DC) = 0.50 K/W
thJC
50
60
70
80
90
100
110
120
130
0 20406080100120
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
T70RIA.. Series
R (DC) = 0.50 K/W
thJC
020406080100120
Maximum Allowable Ambient Temperature (°C)
R=0
.1K/W-DeltaR
thSA
0.3K/W
0.7K/W
0.5K
/W
1K/W
1.5K/W
2K/W
3K/W
5K/W
7K/W
0
10
20
30
40
50
60
70
80
90
100
0 10203040506070
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
T70RIA.. Series
T = 125°C
J
020406080100120
Maximum Allowable Ambient Temperature (°C)
5K/W
3K/W
2K/W
1.5K/W
1K/W
0.7K/W
0.5K/W
0.3K/W
R=0
.1K/W-DeltaR
thSA
0
20
40
60
80
100
120
140
0 20406080100120
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
T70RIA.. Series
T = 125°C
J
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93756
8Revision: 03-Jun-08
T..RIA Series
Vishay High Power Products Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A
Fig. 13 - Maximum Non-Repetitive Surge Current Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - On-State Voltage Drop Characteristics
Fig. 16 - Gate Characteristics
700
800
900
1000
1100
1200
1300
1400
1500
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
T70RIA.. Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
RRM
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
T70RIA.. Series
1
10
100
1000
00.511.522.533.54
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T70RIA.. Series
T = 125°C
J
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b) (a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
Rectangular gate pulse
T70RIA.., T90RIA.. Series Frequency Limited by PG(AV)
tr=1µs, tp>=6µs
rated di/dt : 20V, 20ohms;
tr=0.5µs, tp>=6µs
<=30% rated di/dt : 15V, 40ohms
(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300µs
(3) (4)
Document Number: 93756 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 03-Jun-08 9
T..RIA Series
Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A Vishay High Power Products
Fig. 17 - Current Ratings Characteristics Fig. 18 - Current Ratings Characteristics
Fig. 19 - On-State Power Loss Characteristics
Fig. 20 - On-State Power Loss Characteristics
50
60
70
80
90
100
110
120
130
020406080100
30° 60° 90° 120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
T90RIA.. Series
R (DC) = 0.38 K/W
thJC
50
60
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
T90RIA.. Series
R (DC) = 0.38 K/W
thJC
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.1K/W-DeltaR
thS
A
0.3K
/W
0.5K/W
0.7K/W
1K/W
1.5K
/W
2K/W
3K
/W
0
20
40
60
80
100
120
140
0 102030405060708090
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
T90RIA Series
T = 125°C
J
020406080100120
Maxi mum Al lowable Ambient Temperature (°C)
R= 0
.1 K/ W- Del
ta R
thSA
0.3K/W
0.5K
/W
0.7K/W
1K
/W
1.5K/W
2K
/W
0
20
40
60
80
100
120
140
160
180
0 20406080100120140160
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximu m Aver age On- stat e Power Loss (W)
Average On-state Current (A)
T90RIA.. Series
T = 125°C
J
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93756
10 Revision: 03-Jun-08
T..RIA Series
Vishay High Power Products Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A
Fig. 21 - Maximum Non-Repetitive Surge Current Fig. 22 - Maximum Non-Repetitive Surge Current
Fig. 23 - On-State Voltage Drop Characteristics
Fig. 24 - Thermal Impedance ZthJC Characteristics
700
800
900
1000
1100
1200
1300
1400
1500
1600
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
T90RIA.. Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM
J
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintai ned.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
T90RIA.. Series
1
10
100
1000
0 0.5 1 1.5 2 2.5 3 3.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T90RIA.. Series
T = 125°C
J
0.01
0.1
1
0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
Steady State Value
R = 0.65 K/W
R = 0.50 K/W
R = 0.38 K/W
(DC Operation)
thJC
thJC
thJC
T50RIA.. Series
T70RIA.. Series
T90RIA.. Series
Document Number: 93756 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 03-Jun-08 11
T..RIA Series
Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A Vishay High Power Products
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
1
- Module type
3
- Circuit configuration
- Voltage code x 10 = V
RRM
4
- Current rating
2
Device code
1324
T 50 RIA 120
+
-
G
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95336
Document Number: 95336 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 21-Jul-08 1
D-55 T-Module Thyristor Standard
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
3 (0.12)
3.9 (0.15) 8 (0.31)
M5
30 (1.18)
27 (1.06)
41 (1.61) MAX.
25 (0.98) MAX. 23.5 (0.93)
+
-
11
(0.43)
18
(0.71)
G
3 (0.12)
4.75 (0.19)
1.3 (0.05)
0.50 (0.20)
32 (1.26) MAX.
15 (0.59)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
