October 2001
2001 Fairchild Semiconductor Corporation FDC6333C Rev C (W)
FDC6333C
30V N & P-Channel PowerTrench MOSFETs
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
• DC/DC converter
• Load switch
• LCD display inverter
Features
• Q1 2.5 A, 30V. RDS(ON) = 95 mΩ @ VGS = 10 V
RDS(ON) = 150 mΩ @ VGS = 4.5 V
• Q2 –2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS = –10 V
RDS(ON) = 220 mΩ @ VGS = –4.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON).
• SuperSOT –6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick).
D1
S2
G1
D2
S1
G2
SuperSOT -6
TM
Pin 1
SuperSOT™-6
3
2
1
4
5
6Q1(N)
Q2(P)
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Q1 Q2 Units
VDSS Drain-Source Voltage 30 –30 V
VGSS Gate-Source Voltage ±16 ±25 V
IDDrain Current – Continuous (Note 1a) 2.5 –2.0 A
– Pulsed 8 –8
Power Dissipation for Single Operation (Note 1a) 0.96
(Note 1b) 0.9
PD
(Note 1c) 0.7 W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 130 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.333 FDC6333C 7’’ 8mm 3000 units
FDC6333C
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FDC6333C Rev C (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µAQ1
Q2 30
–30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA,Ref. to 25°C
ID = –250 µA,Ref. to 25°CQ1
Q2 27
–22 mV/°C
IDSS Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V
V
DS
= –24 V, V
GS
= 0 V Q1
Q2 1
–1 µA
IGSSF Gate–Body Leakage, Forward V
GS
= 16 V, V
DS
= 0 V
V
GS
= 25 V, V
DS
= 0 V Q1
Q2 100
100 nA
IGSSR Gate–Body Leakage, Reverse V
GS
= –16 V, V
DS
= 0 V
V
GS
= –25 V, V
DS
= 0 V Q1
Q2 –100
–100 nA
On Characteristics (Note 2)
VGS(th)Q1 VDS = VGS, ID = 250 µA11.8 3Gate Threshold Voltage
Q2 VDS = VGS, ID = –250 µA–1 –1.8 –3
V
∆VGS(th) Q1 ID = 250 µA,Ref. To 25°C 4
∆TJ
Gate Threshold Voltage
Temperature Coefficient Q2 ID = –250 µA,Ref. to 25°C–4
mV/°C
RDS(on) Q1 VGS = 10 V, ID = 2.5 A
VGS = 4.5 V, ID = 2.0 A
VGS = 10 V, ID = 2.5 A,TJ=125°C
73
90
106
95
150
148
Static Drain–Source
On–Resistance
Q2 VGS = –10 V, ID = –2.0 A
VGS =– 4.5 V, ID = –1.7 A
VGS = 10 V, ID= –2.0 A,TJ=125°C
95
142
149
130
220
216
mΩ
ID(on) Q1 VGS = 10 V, VDS = 5 V 8On–State Drain Current
Q2 VGS = –10 V, VDS = –5 V –8 A
gFS Q1 VDS = 5 V ID = 2.5 A 7
Forward Transconductance
Q2 VDS = –5 V ID = –2.0A 3 S
Dynamic Characteristics
Ciss Q1 VDS=15 V, V GS= 0 V, f=1.0MHz 282
Input Capacitance Q2 VDS=–15 V, V GS= 0 V, f=1.0MHz 185 pF
Coss Q1 VDS=15 V, V GS= 0 V, f=1.0MHz 49Output Capacitance
Q2 VDS=–15 V, V GS= 0 V, f=1.0MHz 56 pF
Crss Q1 VDS=15 V, V GS= 0 V, f=1.0MHz 20Reverse Transfer Capacitance
Q2 VDS=–15 V, V GS= 0 V, f=1.0MHz 26 pF
Switching Characteristics (Note 2)
td(on) Q1 4.5 9
Turn–On Delay Time Q2 4.5 9ns
trQ1 6 12
Turn–On Rise Time Q2 13 23 ns
td(off) Q1 19 34
Turn–Off Delay Time Q2 11 20 ns
tfQ1 1.5 3
Turn–Off Fall Time Q2
For Q1:
VDS =15 V, I DS= 1 A
VGS= 10 V, RGEN = 6 Ω
For Q2:
VDS =–15 V, I DS= –1 A
VGS= –10 V, RGEN = 6 Ω
2 4ns
QgQ1 4.7 6.6
Total Gate Charge Q2 4.1 5.7 nC
Qgs Q1 0.9
Gate–Source Charge Q2 0.8 nC
Qgd Q1 0.6
Gate–Drain Charge Q2
For Q1:
VDS =15 V, I DS= 2.5 A
VGS= 10 V, RGEN = 6 Ω
For Q2:
VDS =–15 V, I DS= –2.0 A
VGS= –10 V, 0.4 nC
FDC6333C
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FDC6333C Rev C (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain–Source Diode Forward Current Q1 0.8 A
Q2 –0.8
VSD Q1 VGS = 0 V, IS = 0.8 A (Note 2) 0.8 1.2
Drain–Source Diode Forward
Voltage Q2 VGS = 0 V, IS = 0.8 A (Note 2) 0.8 –1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 130 °C/W when
mounted on a 0.125
in2 pad of 2 oz.
copper.
b) 140°/W when mounted
on a .004 in2 pad of 2 oz
copper
c) 180°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC6333C
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FDC6333C Rev C (W)
Typical Characteristics: N-Channel
0
2
4
6
8
10
0 1 2 3
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
3.0V
6.0V
VGS = 10V
3.5V
4.5V
0.8
1
1.2
1.4
1.6
1.8
2
0246810
ID, DRAIN CURRENT (A)
R
DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.0V
10V
4.0V 4.5V
3.5V
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 025 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = 2.5A
VGS = 10V
0.05
0.1
0.15
0.2
0.25
246810
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = 1.25A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
withTemperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
1.5 22.5 33.5 4
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
T
A
=-55oC25oC
125oC
VDS =5V
0.0001
0.001
0.01
0.1
1
10
100
0.2 0.4 0.6 0.8 11.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6333C
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FDC6333C Rev C (W)
Typical Characteristics: N-Channel (continued)
0
2
4
6
8
10
012345
Qg, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
ID = 2.5A VDS = 5V
15V
10V
0
100
200
300
400
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 110 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
DC
1s
100ms
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA = 180oC/W
TA = 25oC
10ms
1ms
10µs
100µs
0
1
2
3
4
5
0.01 0.1 110 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 180°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
FDC6333C
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FDC6333C Rev C (W)
Typical Characteristics: P-Channel
0
2
4
6
8
10
012345
-VDS, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
-4.0V
-4.5V
VGS = -10V -6.0V
-3.5V
0.5
1
1.5
2
2.5
3
0 2 4 6 8 10
-ID, DRAIN CURRENT (A)
R
DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -3.5V
-4.5V -5.0V
-10V
-6.0V
-4.0V
Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 025 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -2A
VGS =-10V
0
0.1
0.2
0.3
0.4
2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = -1A
TA = 125oC
TA = 25oC
Figure 13. On-Resistance Variation
withTemperature. Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
1.5 2.5 3.5 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
TA = -55oC
125oC
VDS = -5V 25oC
0.0001
0.001
0.01
0.1
1
10
00.2 0.4 0.6 0.8 11.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6333C
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FDC6333C Rev C (W)
Typical Characteristics: P-Channel (continued)
0
2
4
6
8
10
012345
Qg, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
ID = -2.0A VDS = -5V
-15V
-10V
0
50
100
150
200
250
300
0 5 10 15 20 25 30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 110 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
DC1s
100ms
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA = 180oC/W
TA = 25oC
10ms
1ms
10µs
100µs
0
1
2
3
4
5
0.01 0.1 110 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 180°C/W
TA = 25°C
Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) + RθJA
RθJA = 180°C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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