LESHAN RADIO COMPANY, LTD.
M26–1/5
1
3
2
MMBTA13LT1
MMBTA14LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Darlington Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CES 30 Vdc
Collector–Base V oltage V CBO 30 Vdc
Emitter–Base V oltage V EBO 10 Vdc
Collector Current — Continuous I C300 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P D225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 556 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
DEVICE MARKING
MMBTA13L T1 = 1M; MMBTA14LT1 = 1N
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V (BR)CEO 30 — Vdc
(I C = 100 µAdc, V BE = 0)
Collector Cutoff Current I CBO — 100 nAdc
( V CB = 30Vdc, I E = 0)
Emitter Cutoff Current I EBO — 100 nAdc
( V EB = 10Vdc, I C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
LESHAN RADIO COMPANY, LTD.
M26–2/5
MMBTA13LT1 MMBTA14LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Mi n Max Unit
ON CHARACTERISTICS (3)
DC Current Gain hFE ––
(I C = 10 mAdc, V CE = 5.0 Vdc) MMBTA13 5,000 —
MMBTA14 10,000 —
(I C = 100mAdc, V CE = 5.0Vdc) MMBTA13 10,000 —
MMBTA14 20,000 —
Collector–Emitter Saturation V oltage VCE(sat) –– 1.5 Vdc
(I C = 100 mAdc, I B = 0.1 mAdc)
Base–Emitter On Voltage V BE — 2.0 Vdc
(I C = 100mAdc, V CE = 5.0Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current – Gain–Bandwidth Product(4) fT125 — MHz
(V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz)
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
4. f T = |h f e | *f test .
R S
in
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
LESHAN RADIO COMPANY, LTD.
M26–3/5
MMBTA13LT1 MMBTA14LT1
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25°C)
f, FREQUENCY (Hz)
Figure 2. Noise Voltage f, FREQUENCY (Hz)
Figure 3. Noise Current
e n , NOISE VOLTAGE (nV)
BANDWIDTH = 1.0 Hz
R S 0
10 µA
100µA
IC=1.0mA
I n , NOISE CURRENT (pA)
BANDWIDTH = 1.0 Hz
IC=1.0mA
100µA
500
200
100
50
20
10
5.0
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10µA
~
~
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
1.0 2.0 5.0 10 20 50 100 200 500 1.0k
500
200
100
50
20
10
5.0
R S , SOURCE RESISTANCE (kΩ)
Figure 4. Total Wideband Noise Voltage
R S , SOURCE RESISTANCE (kΩ)
Figure 5. Wideband Noise Figure
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
= 10 µA
100 µA
1.0 mA
200
100
70
50
30
20
10
BANDWIDTH = 10 Hz TO 15.7 kHz
10 µA
100 µA
I
C
= 1.0 mA
1.0 2.0 5.0 10 20 50 100 200 500 1.0k
NF, NOISE FIGURE (dB)
V T, TOTAL WIDEBAND NOISE VOLTAGE (nV)
LESHAN RADIO COMPANY, LTD.
M26–4/5
MMBTA13LT1 MMBTA14LT1
C
ibo
V R, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
C, CAPACITANCE (pF)
0.04 0.1 0.2 0.4 1.0 1.2 4.0 10 20 40
20
10
7.0
5.0
3.0
2.0
C
obo
I C , COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
C , COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
V, VOLTAGE ( VOLTS )
T J = 25°C
+25°C TO +125°C
* R θVC for V CE(sat)
–55°C TO +25°C
+25°C TO +125°C
–55°C TO +25°C
θ VB for V BE
1.6
1.4
1.2
1.0
0.8
0.6
–1.0
–2.0
–3.0
–4.0
–5.0
–6.0
200k
100k
70k
50k
30k
20k
10k
7.0k
5.0k
3.0k
2.0k
T
J
= 125°C
T
J
=25
°C
V
CE
= 5.0 V
f = 100 MHz
T
J
= 25°C
I C , COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
0.5 1.0 2.0 5.0 10 20 50 100 200 500
4.0
2.0
1.0
0.8
0.6
0.4
0.2
|h fe |, SMALL– SIGNAL CURRENT GAIN
25°C
–55°C V
CE
= 5.0V
5.0 7.0 10 20 30 50 70 100 200 300 500
h FE , DC CURRENT GAIN
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
3.0
2.5
2.0
1.5
1.0
0.5
V CE , COLLECT OR– EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain I B , BASE CURRENT (µA)
Figure 9. Collector Saturation Region
5.0 7.0 10 20 30 50 70 100 200 300 500
V
BE(sat)
@ I
C
/I
B
= 1000
V
CE(sat)
@ I
C
/I
B
= 1000
V
BE(on)
@ V
CE
= 5.0 V
5.0 7.0 10 20 30 50 70 100 200 300 500
*APPLIES FOR I
C
/I
B
<
h
FE
/3.0
SMALL–SIGNAL CHARACTERISTICS
T
J
= 25°C
I
C
= 10mA 50 mA 250mA 500mA
R θV , TEMPERATURE COEFFICIENTS (mV/°C)
LESHAN RADIO COMPANY, LTD.
M26–5/5
t, TIME (ms)
Figure 12. Thermal Response
r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED)
D = 0.5
0.05
0.1
0.2
SINGLE PULSE
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
V CE , COLLECT OR–EMITTER VOLTAGE (VOLTS)
Figure 13.Active Region Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40
T A = 25°C T C = 25°C 100µs
1.0 ms
1.0 s
I C , COLLECTOR CURRENT (mA)
1.0k
700
500
300
200
100
70
50
30
20
10
MMBTA13LT1 MMBTA14LT1
SINGLE PULSE
Z θJC(t) = r(t) • R θJC T J(pk) – T C = P (pk) Z θJC(t)
Z θJA(t) = r(t) • R θJA T J(pk) – T A = P (pk) Z θJA(t)
FIGURE A
Design Note: Use of Transient Thermal
Resistance Data
t P
P PP P
t 1
1/f
DUTY CYCLE =t 1 f = t 1
t P
PEAK PULSE POWER = P P
