LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors NPN Silicon MMBTA13LT1 MMBTA14LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector-Emitter Voltage V CES 30 Vdc Collector-Base Voltage V CBO 30 Vdc Emitter-Base Voltage V EBO 10 Vdc IC 300 mAdc Collector Current -- Continuous CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max PD 225 mW 1.8 mW/C R JA 556 C/W PD 300 mW 2.4 mW/C 417 -55 to +150 C/W C R JA T J , T stg Unit DEVICE MARKING MMBTA13LT1 = 1M; MMBTA14LT1 = 1N ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 30 -- Vdc I CBO -- 100 nAdc I EBO -- 100 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 100 Adc, V BE = 0) Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C = 0) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M26-1/5 LESHAN RADIO COMPANY, LTD. MMBTA13LT1 MMBTA14LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 5,000 10,000 10,000 20,000 -- -- -- -- VCE(sat) -- 1.5 Vdc V BE -- 2.0 Vdc ON CHARACTERISTICS (3) DC Current Gain (I C = 10 mAdc, V CE = 5.0 Vdc) hFE MMBTA13 MMBTA14 MMBTA13 MMBTA14 (I C = 100mAdc, V CE = 5.0Vdc) Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 0.1 mAdc) Base-Emitter On Voltage (I C = 100mAdc, V CE = 5.0Vdc) -- SMALL-SIGNAL CHARACTERISTICS Current - Gain-Bandwidth Product(4) (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz) fT 125 -- MHz 3. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. 4. f T = |h f e | *f test . RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model M26-2/5 LESHAN RADIO COMPANY, LTD. MMBTA13LT1 MMBTA14LT1 NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25C) 2.0 500 BANDWIDTH = 1.0 Hz 1.0 0.7 S 200 100 I n , NOISE CURRENT (pA) e n , NOISE VOLTAGE (nV) BANDWIDTH = 1.0 Hz R ~ ~0 10 A 50 100A 20 IC=1.0mA 10 0.5 IC=1.0mA 0.3 0.2 100A 0.1 0.07 0.05 10A 0.03 5.0 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k 0.02 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 2. Noise Voltage Figure 3. Noise Current 200 50k 100k 500 BANDWIDTH = 10 Hz TO 15.7 kHz NF, NOISE FIGURE (dB) V T, TOTAL WIDEBAND NOISE VOLTAGE (nV) 10 BANDWIDTH = 10 Hz TO 15.7 kHz 100 I C = 10 A 70 50 100 A 30 20 1.0 mA 2.0 10 A 100 50 100 A 20 I C = 1.0 mA 10 10 1.0 200 5.0 10 20 50 100 200 500 1.0k 5.0 1.0 2.0 5.0 10 20 50 100 200 R S , SOURCE RESISTANCE (k) R S , SOURCE RESISTANCE (k) Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure 500 1.0k M26-3/5 LESHAN RADIO COMPANY, LTD. MMBTA13LT1 MMBTA14LT1 SMALL-SIGNAL CHARACTERISTICS 7.0 C ibo C obo 5.0 3.0 2.0 0.1 0.2 0.4 1.0 1.2 4.0 10 20 40 h FE , DC CURRENT GAIN 70k 25C 30k 20k 10k -55C V CE= 5.0V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 500 V, VOLTAGE ( VOLTS ) 0.4 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 T J= 25C 2.5 I C = 10mA 50 mA 250mA 500mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 I B , BASE CURRENT (A) V BE(sat) @ I C /I B = 1000 1.2 V BE(on) @ V CE = 5.0 V 1.0 V CE(sat) @ I C /I B = 1000 0.6 10 20 30 50 70 100 200 300 C , COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages 500 500 3.0 Figure 9. Collector Saturation Region 1.4 7.0 0.6 Figure 8. DC Current Gain T J = 25C 5.0 0.8 I C , COLLECTOR CURRENT (mA) 1.6 0.8 1.0 I C , COLLECTOR CURRENT (mA) 100k 5.0k T J = 25C Figure 7. High Frequency Current Gain T J= 125C 7.0k 2.0 Figure 6. Capacitance 200k 50k V CE = 5.0 V f = 100 MHz V R, REVERSE VOLTAGE (VOLTS) V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS) 0.04 |h fe |, SMALL- SIGNAL CURRENT GAIN T J =25C 10 4.0 R V , TEMPERATURE COEFFICIENTS (mV/C) C, CAPACITANCE (pF) 20 -1.0 *APPLIES FOR I C /I B