BSS138 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES @ 50V , 0.22A , Roscon=3.5Q @Ves=10V. Roscon=6Q @Veas=4.5V. e High dense cell design for low Rosion). e Rugged and reliable. e SOT-23 package. SOT-23 i: Gay. LT ; S ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDs 50 V Gate-Source Voltage VGs +20 V Drain Current-Continuous* @Ts=125 C ID 220 mA Pulsed low 880 mA Drain-Source Diode Forward Current * Is 220 mA Maximum Power Dissipation * PD 300 mW Operating Junction and Storage Tu, Tste 55 to 150 C Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient * RaJA 417 C/W 7-7BSS138 ELECTRICAL CHARACTERISTICS (Ta-25 C unless otherwise noted) Parameter Symbol Condition Min | Typ | Max | Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVoss | Ves=0V, ID=250HA 50 V Zero Gate Voltage Drain Current IDss Vps=50V, Ves=0V 0.5 | vA Gate-Body Leakage lass Ves =+20V, Vos=0V +100 | nA ON CHARACTERISTICS? Gate Threshold Voltage Vasith) Vps=Ves, lp= 1mA 08) 145 | 16] V Drain-Source On-State Resistance RDs(ON) Nes=10, n=220mA 18 | 35 Ves=4.5V, ln= 220mA 25 | 6 | Q On-State Drain Current ID(ON} Vos=7V, Ves= 10V 500 mA Forward Transconductance Ors Vos=10V, ln=220mA | 120 | 450 mS DYNAMIC CHARACTERISTICS Input Capacitance Ciss 40 | 55 | PF Vps =25V, Ves = 0V Output Capacitance Coss f=1 OMHz 11 | 15 | PF Reverse Transfer Capacitance Crss 7 | 10 | PF SWITCHING CHARACTERISTICS Turn-On Delay Time {D(ON) Von = 30V, 6 | 8 | ns Rise Time tr Na Ov 9 | 12 | ns Turn-Off Delay Time {D(OFF) Acen = 500 12 | 16 | ns Fall Time t 16 | 22 | ns 7-8BSS138 ELECTRICAL CHARACTERISTICS (Ts=25C unless otherwise noted) Parameter Symbol Condition Min | Typ | Max | Unit DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage Vsp Ves = OV, Is =440mA 08) 14) V Notes a.Surface Mounted on FR4 Board, t<10sec. b.Pulse Test:Pulse Width <300 ws, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2.5 I I I 1.0 T Ves=10,9,8,7,6,5,4V Vos=10V 0.8 2.0 a < =e =< = 45 ZA a = 06 E a e 3 3 = 1.0 = Of o Tu=1 a 5 op = 0.5 a | ~ . O 0 0 14 2 3 4 5 6 00 10 20 30 40 50 60 Vos, Drain-to-Source Voltage (V) Vas, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 60 a e 50 c OB Tj=125C & 40 oe 2 co: 9 Ne 30 aO = Eg 3 8 o g 20 3 Oo Zo ; Oe o 10 2s ca 0 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 Vos, Drain-to Source Voltage (V) Ip, Drain Current(A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 7-9BSS138 16 TI & Vps=Vcs 6 14F tp-250 ua > Ss 12 0 oO . Ooo 23 J 1.0 $8 PN =E 08 = o oo @ 06 o Oo 04 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature (C) Figure 5. Gate Threshold Variation with Temperature oo L Qrs, Transconductance (S) Vps=10V 0 l 0 0.1 0.2 0.3 0.4 Ips, Drain-Source Current (A) Figure 7. Transconductance Variation with Drain Current 10 7T 7 AY ye = Vos=8V / Ss 8 F Ip-0.22A 7 Oo > 8 6 a wn 2 4 2 wo o 8 > A 0 02 04 06 08 10 12 14 1.6 Qg, Total Gate Charge (nC) Figure 9. Gate Charge BVpss, Normalized Drain-Source Breakdown Voltage Is, Source-drain current (A) Ip, Drain Current (A) 1.20 1.15 1.10 1.05 1.00 0.95 He 0.90 50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature (C) Figure 6. Breakdown Voltage Variation with Temperature 0.4 0.1 0.01 04 0.6 0.8 1.0 1.2 1.4 Vsp, Body Diode Forward Voltage (V) Figure 8. Body Diode Forward Voltage S = 0.01 0.001 Variation with Source Current A ve Vas=10V Single Pulse Ta=25C 1 10 50 100 Vos, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating AreaBSS138 Vpb ta(on) >| VIN ft 90% D VouT Vas Vout INVERTED @) RGEN G Ss VIN = PULSE WIDTH 7 Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 0.5 8 02 SS o1 SS ogo in & 0.05 35 * NN Pom oe oO E E 0.01 ti > Sz [b> 25 ee 1. Rosa (t)=r (t) * Rava 6 2. Rova=See Datasheet ke 3. Tuw-Ta = Pom* Reva (t) 4. Duty Cycle, D=ti/te 0.001 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve