RMB2S thru RMB4S Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifiers SYHSEMI SEMICONDUCTOR Voltage Range 200 to 400 Volts Forward Current 0.5 Ampere Features @ Plastic package has UL Flammability Classification 94-0 @ Glass passivated chip junctions @ Saves space on printed circuit boards @ Fast recovery, low switching loss @ High temperature soldering guaranteed: 260C/10 seconds at 4 lbs. (2.3kq) tension TO-269AA (MBS) G29 Fay a i Ofranstans in inches +e and frilineters) Mechanical Data 0.981 70) O44 (FES) @ Case: Molded plastic body over passivated junctions ae = @ Terminals: Plated leads solderable per MIL-STD-750, Method 2026 @ Polarity: Polarity symbols marked on body @ Mounting Position: Any @ Weight 0.078 oz, 0.224 Maximum Ratings and Electrical Characteristics (T,=25C unless othenwise noted) Parameter Symbok RMB2?5 RMB4S Units Masimurn repetitive peak reverse voltag Vere 200 doo Volts Maxirnurm RIVES voltage Vanes 1406 230 Volts Maximum CC blocking voltage Vo 200) 400 Volts Maximum average fomvard output rectified current at T,=30C on glass-epoxwy PCB. Veen 06 Amp on aluminum sub strate 06 # Peak fonvard sume current .3 tre single half sine-wave superimposed on rated load (JEDEC Method) Fm a0 AIApS Rating for fusing tt = 8.30) Ft 6.0 Aegan Masinurm instantaneous fonvard voltage drop per leg at 0.44. Ve 1.0 Walt Maximum DG reverse current at T, = 26C 6.01 wh rated DC blecking voltage perleg 1, = 125C k 100 Maximum reverse recovery time at L=0.54, |.=1.04, | =0.254 1 160 nd Pas 86 (0 Typical thernal resistance per leq Para Foe oh Ray ag Typical junction capacitance per leg at 4.0) 1.OnMHE c, 13 pF Operating junction and storage temperature range Fes -55 to +150) ot Notes: = 1. On glass epoxy PCB. mounted on 0540.05" CL 3x 1.arnimi pads 2. On aluminum substrate PCB. with an area of 0.8" x 0.8" (20x 20mm) mountedon 0.05% 0.05" (1.3 x 1.3mm) solder padRMB2S thru RMB4S RATINGS AND CHARACTERISTIC CURVES (T, = 25C unless otherwise notech Fig. 1 Maximum Forward Current Fig. 2 Maximum Non-Repetitive Peak Derating Curve Forward Surge Current 35 < _ ws cs rTrooie - =< Single Half Sine-Wave +4 5 3 (JEDEG Mathod) 3 Sat & B MAW| f= 60Hz 2 : a5 | f= 50Hz Ps 5 40 | he mL [a - ~ . % <0 {YY \ oN | a wo | al Zz Resistive or Inductive Load | | iii Bay o 2 4 60 80 100 120 140 160 1 10 100 Ambient Temperature (C) Number of Cycles Fig. 3 Typical Instantaneous Fig. 4Typical Reverse Leakage Forward Characteristics $00 Characteristics Per Leg 10 < <= Pule Width = 300 s @ = 1% Duty Cycle 3 E % 10 3 ; 3 5 $1 ; ou a ; 0.1 3 3 5 Ty= 25C 0.01 0.01 02 o4 o8 o8 10 142 14 0 20 40 80 80 100 Instantaneous Forward Voltage (VV) Percent of Rated Peak Reverse Voltage (%) Fig. 5Typical Junction Capacitance 30 a} T) 525C 25 f=1.0MHz _| eo AN Vsig = 50mVp-p anil & 16 ne 8 Ms 10 h : A 3 so ph 0 0.1 1 10 100 200