Sbasw erie ww ww ew - PNP SILICON PLANAR EPITAXIAL TRANSISTORS MPS6516 thru MPS6519 are PNP silicon plonar 3 CASE T0-92A epitaxial transistors designed for general purpose amplifier applications and for com= plementary circuitry. . | ao . oe ee ABSOLUTE MAXIMUM RATINGS MPS6516/7/8 MPS6519. Collector-Emitter Voltage . VCEO 40V ! 25V Collector-Base Voltage VEBO * 40V 25V Emitter-Base Voltage . .. VEBO.. 4V -. 4Vv Collector Current oS 0 . Ic . 100mA _ ~100mA Total Power Dissipation @ TA=25 C -Ptot 350mW - = 350mW @ Tc=25C oo & OW oe Operating Junction & Storage Temperature _ =55 to +150C ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) ~ - - PARAMETER SYMBOL .| MIN TYP. MAX [UNIT| TEST CONDITIONS \-Collector-Emitter | MPS6516/7/8! BVcEO 40: = |V | Ics0.5mA: Ip=0 Breakdown Voltage MPS6519 7.) Vo - |Emitter-Base Breakdown Voltage |BVEBO | 4 V, | IE=10yA Ic=0 Collector Cutoff | MPS6516/7/8|}IcBo | 50 | nA | Vegz30V. IExO Current MPS6519 : 50 | nA | VCB=20V-:. Ig=0 Collector Cutoff | MPS6516/7/8] IcBo 1 | pA VCB=30V" Ie=0. Current MPS6519 1 | pA | VcB=20V = Ie=0 Collector-Emitter Saturation |. VCE(SAT) 0.5 | V Ic=50mA TB=5mA: Voltage ote D.C. Current Gain MPS6516 | HE 50 100 IC=2mA VCE=10V MP S6517 M 90 180 : MPS6518 oN 150 300 MPS6519 1 250. 500 D.C. Current Gain MPS6516 |HRE* | 30 a, IC=100mA VCE=10V MPS6517 . 60 | Ce MPS6518 4 To. 90" MPS6519 1* 150 ( 3 Current Gain-Bandwidth Product | fT . 150 MHz Ic=2mA VcEs10V - _ = 250 MHz] _1C=10mA_VCE=10V o : * . as 3 a we One S 8 Tet to eybapieth ORF PAtY Cycle=16 uae P 0. a) 38 Hung To Road, Kwun Tong, Kowloon iH ig Kong. Cable: Microtron, Hong Kong, Telex: 43510 Micro DHX. ; B P.O. Boxtoa77, Kwan-~ - - Continued - - - ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise) TEST CONDITIONS PARAMETER SYMBOL MIN TYP MAX | UNIT Output Capacitance : Cob 4 pF VcB=10V ___sirIE=0 f=100kHz Noise Figure NF 2. dB Ic=10pA VCE=5V Rs=lOKQ~- Power Bandwidth =15.7KHz, 3dB points @ 10Hz & lOkHz