PBSS5240Y,135 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2001 Oct 24 2002 Feb 28

DISCRETE SEMICONDUCTORS

PBSS5240Y

40 V low VCEsat PNP transistor

fpa

MBD128

2002 Feb 28 2

NXP Semiconductors Product data sheet

40 V low VCEsat PNP transistor PBSS5240Y

FEATURES

•Low collector-emitter saturation voltage

•High current capability

•Improved device reliability due to reduced heat

generation

•Replacement for SOT89/SOT223 standard packaged

transistors due to enhanced performance.

APPLICATIONS

•Supply line switching circuits

•Battery manageme nt applications

•DC/DC converter applications

•Strobe flash units

•Heavy duty battery powered equipment (motor and lamp

drivers).

DESCRIPTION

PNP low VCEsat transistor in a SOT363 (SC-88) plastic

package.

NPN complement: PBSS4240Y.

MARKING

Note

1. * = p: made in Hongkong.

* = t: made in Malaysia.

TYPE NUMBER MARKING CODE(1)

PBSS5240Y 52*

PINNING

PIN DESCRIPTION

1collector

2collector

3base

4emitter

5collector

6collector

handbook, halfpage

MAM464

123

654

Top view

1, 2, 5, 6

Fig.1 Simplified outline (SOT363; SC-88) and

symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage −40 V

ICM peak collector current −3 A

ICcollector current (DC) −2 A

RCEsat equivalent on-resistance <200 mΩ

2002 Feb 28 3

NXP Semiconductors Pr oduct dat a shee t

40 V low VCEsat PNP transistor PBSS5240Y

LIMITING VALUES

In accordance with the Absolute Maximum Ratin g S ystem (IEC 60134).

Notes

1. Device mounted on a printed-circuit board, single side copper, tinplate d and standard footpr int.

2. Device mounted on a printed-circuit board, single side copper, tinplate d and mounting pad for collector 1 cm2.

THERMAL CHARACTE RISTICS

Notes

1. Device mounted on a printed-circuit board, single side copper, tinplate d and standard footpr int.

2. Device mounted on a printed-circuit board, single side copper, tinplate d and mounting pad for collector 1 cm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volt a ge open emitter − −40 V

VCEO collector-emitter voltage open base − −40 V

VEBO emitter-base voltage open collector − −5 V

ICcollector current (DC) − −2 A

ICM peak collector current − −3 A

IBM peak base current − −300 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −270 mW

Tamb ≤ 25 °C; note 2 −430 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient note 1 463 K/W

note 2 291 K/W

2002 Feb 28 4

NXP Semiconductors Pr oduct dat a shee t

40 V low VCEsat PNP transistor PBSS5240Y

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector-base cut-off current VCB = −30 V; IE = 0 − −100 nA

VCB = −30 V; IE = 0; Tj = 150 °C− −50 μA

IEBO emitter-base cu t-off current VEB = −4 V; IC = 0 − −100 nA

hFE DC current gain VCE = −2 V; IC = −100 mA 300 −

VCE = −2 V; IC = −500 mA 260 −

VCE = −2 V; IC = −1 000 mA 210 −

VCE = −2 V; IC = −2 000 mA 100 −

VCEsat collector-emitter saturation

voltage IC = −100 mA; IB = −1 mA − −100 mV

IC = −500 mA; IB = −50 mA − −110 mV

IC = −750 mA; IB = −15 mA − −225 mV

IC = −1 000 mA; IB = −50 mA − −225 mV

IC = −2 000 mA; IB = −200 mA − −350 mV

VBEsat base-emitt er saturation

voltage IC = −2 000 mA; IB = −200 mA − −1.1 V

VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA − −0.75 V

Cccollector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz −40 pF

FTtransition frequen c y IC = −100 mA; VCE = −10 V; f = 100 MHz 100 −MHz

2002 Feb 28 5

NXP Semiconductors Pr oduct dat a shee t

40 V low VCEsat PNP transistor PBSS5240Y

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT363 SC-88

pin 1

index A

detail X

0 1 2 mm

scale

132

Plastic surface mounted package; 6 leads SOT363

UNIT A1

max bpcDEe

HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

97-02-28

2002 Feb 28 6

NXP Semiconductors Pr oduct dat a shee t

40 V low VCEsat PNP transistor PBSS5240Y

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s ) described in this document may have changed since this do cument was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tion.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificat ion.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

in this document an d such terms and conditio ns, the latter

will prevail.

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may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, c onv eyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property ri gh ts.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No changes were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/0 2/pp7 Date of release: 2002 Feb 28 Docum ent order number: 9397 750 09503