ere FAIRCHILD ee DISCRETE POWER AND SIGNAL SEMICONDUCTOR mw BZX84C20 TECHNO NOGIES 5% TOLERANCE Absolute Maximum Rating$ (note 1) TA = 25C unless otherwise noted Parameter Value Units Storage Temperature -55 to +150 C Maximum Junction Temperature +150 C Total Power Dissipation at 25C 350 mw Derate above 25C 1.8 mW/C Thermal Resistance - Junction to Ambient 357 OC/W Repetitive Peak Forward Current (I-ay) 250 mA Repetitive Peak Working Current (lay) 250 mA Dvz/DT @ 5.0 mA Min 14.4 mV/K Max 18.0 mvV/K Nominal Zener Voltage (V;) at 5.0 mA 20.0 V Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired CONNECTION DIAGRAM MECHANICAL CHARACTERISTICS Case: JEDEC SOT-23AB (Low Profile) (Plastic 3 Leaded Surface Mount Device) Lead Finish: Solder Plate 85/15 (Sn/Pb) 200 um Min Polarity: Cathode = Pin 1. When operated in zener mode, cathode will be positive with respect to anode. Electrical Characteristics 1 2NC [1] [2] TA = 25C unless otherwise noted SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS Vz Zener Voltage 18.7 21.1 V lr = 1.0 MA Pulse 26 ms 18.8 21.2 V Pan = 5.0 mA Pulse 26 mS 18.9 21.4 V lr = 20.0 mMAD.c Zz Zener Impedance 225 Ohms | Il, = 1.0mA 20 Ohms | I,, = 20.0mA Ip Reverse Leakage 50 nA Ve = 14.0V Ve Forward Voltage 900 mV If = 10mA Cr Capacitance 60 pF Ve = O00 V 1997 Fairchild Semiconductor Corporation Revision B - October 15, 1998ere FAIRCHILD ee SEMICONDUCTOR m DISCRETE POWER AND SIGNAL TECHNOLOGIES Zener devices only The pin identification shown below is for Diode and 0.019 (0.483) > < 0.015 (0.381) A 3 A. 0.098_ (2.489) 0.055 (1.397) 0.083 (2.108) 3 CHARACTERS MAX 0.047 (1.194) v 1 2 0.024 (0.810) 0.018 (0.457) Vv 0.040 (1.016) 0.035 (0.889) < 0.080 (2.032) 0.070 (1.778) 0.120 (3.048) tt _ 0110 (2.794) A ROFILE 0.041__ (1.041) (49) 0.030 (0.762) LOW PROFILE _0,0040 (0.102) (49) 0.0005 (0.013) SOT-23 | __ A 0.0059 (0.150) 0.0035 (0.089) 350 MILLIWATT ZENER Diode vs Bipolar Pinout Diode Bipolar Pin 1 = Pin 2 Pin 2 = Pin 3 Pin 3 = Pin 1ere FAIRCHILD ee SEMICONDUCTOR m DISCRETE POWER AND SIGNAL TECHNOLOGIES 0.030 +/- 0.005 (0.762 +/- 0.127) 0.120 MINIMUM (3.048) >< Q.035 Typical [| q > (0.889) 0.060 _+/- 0.005 (1.524 +/- 0.127) RECOMMENDED SOLDER PADS FOR SOT-23