MINI-MELF-SMD Silicon Diode
LL4150-1
or
LL4150
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bondplating for
problem free solderability
Available in DO-35 package
Applications Switching
Used in general purpose applications, where a low current controlled
forward characteristic and fast switching speed are important.
BKC can produce generic equivalents to JAN/ TX/ TXV and S level per
MIL-S-19500/ 231 with internal source control drawings.
Maximum Ratings Symbol Value Unit
Peak Inverse Voltage PIV 75 (Min.) Volts
Average Rectified Current IAvg 200 mAmps
Continuous Forward Current IFdc 400 mAmps
Peak Surge Current (tpeak = 1 sec.) Ipeak 0.5 Amp
BKC Power Dissipation TL=50 oC, L = 3/8" from body Ptot 500 mWatts
Operating Temperature Range TOp -65 to +200 o C
Storage Temperature Range TSt -65 to +200 o C
Electrical Characteristics @ 25 oC Symbol Minimum Maximum Unit
Forward Voltage Drop @ IF = 1.0 mA VF 0.54 0.62 Volts
Forward Voltage Drop @ IF = 10 mA VF 0.66 0.74 Volts
Forward Voltage Drop @ IF = 50 mA VF 0.76 0.86 Volts
Forward Voltage Drop @ IF = 100 m VF 0.80 0.92 Volts
Forward Voltage Drop @ IF = 200 mA VF 0.87 1.0 Volts
Reverse Leakage Current @ VR = 50 V IR 0.1 (100 @ 150 oC) µA
Breakdown Voltage @ Ir = 0.1 mA PIV 75 Volts
Capacitance @ VR = 0 V, f = 1mHz CT2.5 pF
Reverse Recovery time (note 1) trr 4.0 nSecs
Reverse Recovery time (note 2,3) trr 6.0 nSecs
Forward Recovery time (note 4) Vfr 10 nSecs
Note 1: Per Method 4031-A with IF = IR = 10 to 200 mA, RL = 100 Ohms,recover to 0.1 If.
Note 2: Per Method 4031-A with IF = IR = 200 to 400 mA, RL = 100 Ohms,recover to 0.1 If.
Note 3: Per Method 4031-A with IF = 10 microA, Ir = 1.0 mA, recover to 0.1 mA.
Note 4: Per Method 4026 with IF = 200 mA, Ir = 1.0 mA, recover to 0.1 mA.
Dia.
.063-.067"
1.6-1.7mm
0.10"REF
2.54 mmREF
Length
0.13-0.146"
3.30-3.70 mm
Both End Caps
0.016-.022"
0.41-0.55 mm
LL-34/35 MINI MELF
Surface Mount Package DO-213AA
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135