VOIDLESS-HERMITICALLY-SEALED
STANDARD RECOVERY GLASS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright © 2008
6-11-2008 REV D
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5550 thru 1N5554
1N5550 – 1N5554
DESCRIPTION APPEARANCE
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/420 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 5.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available i n surface mount MELF packa ge configurations b y adding a “US” suffi x
(see separate data sheet for 1N5550US thru 1N5554US). Microsemi also offers
numerous other rectifier products to meet higher and lower current ratings with
various recovery time speed requirements in cluding fast and ultrafast device types in
both through-hole and surfac e mount packages.
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
Popular JEDEC registered 1N5550 to 1N5554 series
Voidless hermetically s ealed glass package
Extremely robust construction
Triple-layer passivation
Internal Category I” Metallurgical bonds
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/420
Surface mount equivalents also avai lable in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet)
Standard recovery 5 Amp rectifiers series 200 to
1000 V
Military and other high-reliability applications
General rectifier applications inclu din g bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Extremely robust construction
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
Junction Temperature: -65oC to +200oC
Storage Temperature: -65oC to +175oC
Thermal Resistance: 22oC/W junction to le ad at 3/8
inch (10 mm) lead length from body
Thermal Impedance: 1.5oC/W @ 10 ms heating time
Average Rectified For ward Current (IO): 5 Amps @
TL = 55ºC (see Note 1)
Forward Surge Current (8.3 ms half sine): 100 Amps
Solder temperatures: 260oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINATIONS: Axial-le ads are Tin/Lead (Sn/Pb)
over Copper. Note: Previous JANS inventor y had
solid Silver axial-leads and no finish.
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 750 mg
See package dimensions on l ast page
ELECTRICAL CHARACTERISTICS
FORWARD VOLTAGE
VF @ 9A (pk)
TYPE MINIMUM
BREAKDOWN
VOLTAGE
VBR
@50μA
VOLTS
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
VOLTS
AVERAGE
RECTIFIED
CURRENT
IO1 @
TL=+55oC
Note 1
AMPS
AVERAGE
RECTIFIED
CURRENT
IO2 @
TA=+55oC
Note 2
AMPS
MIN.
VOLTS MAX.
VOLTS
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
μA
REVERSE
RECOVERY
trr
Note 3
μs
1N5550 220 200 5 3 0.6V (pk) 1.2V (pk) 1.0 2.0
1N5551 440 400 5 3 0.6V (pk) 1.2V (pk) 1.0 2.0
1N5552 660 600 5 3 0.6V (pk) 1.2V (pk) 1.0 2.0
1N5553 880 800 5 3 0.6V (pk) 1.3V (pk) 1.0 2.0
1N5554 1100 1000 5 3 0.6V (pk) 1.3V (pk) 1.0 2.0
NOTE 1: Rated at TL = 55ºC at L = 0.375 inch from body. Derate linearly at 41.6 mA/ºC above TL = 55ºC
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boar ds where thermal resistance from
mounting point to ambient is sufficiently controlled where TJ(MAX) rating is not exceeded.
NOTE 3: IF = 0.5 A, IRM = 1.0 A, IR(REC) = .250 A
VOIDLESS-HERMITICALLY-SEALED
STANDARD RECOVERY GLASS
RE
C
TIFIER
S
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5550 thru 1N5554
1N5550 – 1N5554
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM Working Peak Reverse Voltage: The maximum peak vo ltage that can be applied over the operating
temperature range excluding all transient voltages (ref JESD282-B).
IO Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-
wave input and a 180 degree conductio n ang le.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
trr Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
GRAPHS
FIGURE 1
MAXIMUM CURRENT vs. LEAD TEMPERATURE
NOTES: 1. Dimensions are in inches.
2. Metric equivalents (to the nearest .01 mm) are
given for general information only and are based
upon 1 inch = 25.4 mm.
Microsemi
Scottsdale Division Page 2
Copyright © 2008
6-11-2008 REV D 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMITICALLY-SEALED
STANDARD RECOVERY GLASS
RE
C
TIFIER
S
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5550 thru 1N5554
1N5550 – 1N5554
L RθJL
INCHES OC/W
.000
.250 (6.35)
.375 (9.53)
.500 (12.70)
.750 (19.05)
11
16.5
22
26
35.5
Maximum lead temperature in oC (TL) at point “L” fr om body (For maximum
operating junction temperature of 175oC with equal two-lead conditions).
FIGURE 2
MAXIMUM POWER IN WATTS v s. LEAD TEMPERATURE
NOTES: 1. Dimensions are in inches.
2. Metric equivalents (to the nearest .01 mm) are given for general
information only and are based upon 1 inch = 25.4 mm.
PACKAGE DIMEN SIONS
Lead Tolerance = + .002 -. 003 in
*Includes sections of the lead or fillet over which the l ead diameter is uncontrolled.
PACKAGE E
Microsemi
Scottsdale Division Page 3
Copyright © 2008
6-11-2008 REV D 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503