VOIDLESS-HERMITICALLY-SEALED
STANDARD RECOVERY GLASS
RE
TIFIER
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright © 2008
6-11-2008 REV D
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5550 thru 1N5554
1N5550 – 1N5554
DESCRIPTION APPEARANCE
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/420 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 5.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available i n surface mount MELF packa ge configurations b y adding a “US” suffi x
(see separate data sheet for 1N5550US thru 1N5554US). Microsemi also offers
numerous other rectifier products to meet higher and lower current ratings with
various recovery time speed requirements in cluding fast and ultrafast device types in
both through-hole and surfac e mount packages.
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Popular JEDEC registered 1N5550 to 1N5554 series
• Voidless hermetically s ealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/420
• Surface mount equivalents also avai lable in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet)
• Standard recovery 5 Amp rectifiers series 200 to
1000 V
• Military and other high-reliability applications
• General rectifier applications inclu din g bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Extremely robust construction
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +200oC
• Storage Temperature: -65oC to +175oC
• Thermal Resistance: 22oC/W junction to le ad at 3/8
inch (10 mm) lead length from body
• Thermal Impedance: 1.5oC/W @ 10 ms heating time
• Average Rectified For ward Current (IO): 5 Amps @
TL = 55ºC (see Note 1)
• Forward Surge Current (8.3 ms half sine): 100 Amps
• Solder temperatures: 260oC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
• TERMINATIONS: Axial-le ads are Tin/Lead (Sn/Pb)
over Copper. Note: Previous JANS inventor y had
solid Silver axial-leads and no finish.
• MARKING: Body paint and part number, etc.
• POLARITY: Cathode band
• TAPE & REEL option: Standard per EIA-296
• WEIGHT: 750 mg
• See package dimensions on l ast page
ELECTRICAL CHARACTERISTICS
FORWARD VOLTAGE
VF @ 9A (pk)
TYPE MINIMUM
BREAKDOWN
VOLTAGE
VBR
@50μA
VOLTS
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
VOLTS
AVERAGE
RECTIFIED
CURRENT
IO1 @
TL=+55oC
Note 1
AMPS
AVERAGE
RECTIFIED
CURRENT
IO2 @
TA=+55oC
Note 2
AMPS
MIN.
VOLTS MAX.
VOLTS
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
μA
REVERSE
RECOVERY
trr
Note 3
μs
1N5550 220 200 5 3 0.6V (pk) 1.2V (pk) 1.0 2.0
1N5551 440 400 5 3 0.6V (pk) 1.2V (pk) 1.0 2.0
1N5552 660 600 5 3 0.6V (pk) 1.2V (pk) 1.0 2.0
1N5553 880 800 5 3 0.6V (pk) 1.3V (pk) 1.0 2.0
1N5554 1100 1000 5 3 0.6V (pk) 1.3V (pk) 1.0 2.0
NOTE 1: Rated at TL = 55ºC at L = 0.375 inch from body. Derate linearly at 41.6 mA/ºC above TL = 55ºC
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boar ds where thermal resistance from
mounting point to ambient is sufficiently controlled where TJ(MAX) rating is not exceeded.
NOTE 3: IF = 0.5 A, IRM = 1.0 A, IR(REC) = .250 A