Switching Chip Diode Series - 0805 / 1206
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
6
Features
■Leadless
■Lead-free
■High speed
Applications
■Cellular phones
■PDAs
■Desktop PCs and notebooks
■Digital cameras
■MP3 players
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package 0805 and 1206 size
format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Switching Diodes offer a forward current
of 100 mA or 150 mA, a reverse voltage of 80 V or 75 V and also have a low leakage reverse current option. The diodes are lead-free with
Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and government
regulations on lead-free components.
Bourns®Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes
roll away much more difficult.
Parameter Symbol CDxxxx-S0180 CDxxxx-S01575 CDxxxx-S0180R Unit
Forward Voltage (Max.) VF1.00 1.00 1.00 V
(If= 100 mA) (If= 50 mA) (If= 100 mA)
Capacitance Between Terminals (Max.) CT3pF
(f = 100 MHz, Vr= 1 V DC)
Reverse Recovery Time (Max.) trr 4nS
(Vr= 6V, If= 10 mA, RL= 50 Ω)
Reverse Current (Max.) IR0.1 2.5 0.05 µA
(Vr= 80 V) (Vr= 75 V) (Vr= 75 V)
Electrical Characteristics (@ TA= 25 °C Unless Otherwise Noted)
Parameter Symbol CDxxxx-S0180 CDxxxx-S01575 CDxxxx-S0180R Unit
Repetitive Peak Reverse Voltage VRRM 90 100 90 V
Reverse Voltage VR80 75 80 V
Average Forward Current Io100 150 100 mA
Forward Current, Surge Peak Isurge 1* 4** 1* A
Power Dissipation PD 300 350 300 mW
Storage Temperature TSTG -55 to +125 °C
Junction Temperature TJ-55 to +125 °C
Absolute Ratings (@ TA= 25 °C Unless Otherwise Noted)
*Condition: 8.3 ms single half sine-wave superimposed on rate load
(JEDEC method).
** Condition: 1.0 µs single half sine-wave superimposed on rate load
(JEDEC method).
How To Order
CD 0805 - S 01 80 R
Common Code
Chip Diode
Package
• 0805
• 1206
Model
S = High Speed Switching
Average Forward Current (Io) Code
01 = 100 mA
015 = 150 mA
(Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
80 = 80 V
75 = 75 V
Reverse Current Suffix
R = Low Leakage IR(CDxxxx-S0180R)
Reliable Electronic Solutions
Asia-Pacific:
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
Europe:
Tel: +41-41 768 5555 • Fax: +41-41 768 5510
North America:
Tel: +1-909 781-5500 • Fax: +1-909 781-5700
www.bourns.com
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Switching Chip Diode Series - 0805 / 1206
Dimension 0805 1206
A2.00 - 2.20 3.00 - 3.20
(0.079 - 0.087) (0.118 - 0.126)
B1.20 - 1.40 1.40 - 1.60
(0.047 - 0.055) (0.055 - 0.063)
C0.40 Typ. 0.50 Typ.
(0.016) (0.020)
D0.20 R Typ. 0.25 R Typ.
(0.008) (0.010)
E0.90 - 1.10 0.90 - 1.10
(0.035 - 0.043) (0.035 - 0.043)
Product Dimensions Recommended Pad Layout
Physical Specifications
Typical Part Marking
Case ....................................0805(2012) / 1206(3216) Molded plastic
Terminals ......................Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity ....................................................Indicated by cathode band
Mounting Position ........................................................................Any
CDxxxx-S0180 ................................................................................S1
CDxxxx-S01575 ..............................................................................S3
CDxxxx-S0180R ..............................................................................S2
A
B
E
C
D
A
C
B
MM
(INCHES)
DIMENSIONS:
Dimension 0805 1206
A (Max.) 2.10 3.00
(0.082) (0.118)
B (Min.) 1.20 1.60
(0.047) (0.063)
C (Min.) 1.20 1.40
(0.047) (0.055)
MM
(INCHES)
DIMENSIONS:
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Switching Chip Diode Series - 0805 / 1206
Rating and Characteristic Curves: CDxxxx-S0180
Derating Curve Capacitance Between Terminals
Forward Characteristics Reverse Characteristics
1000
100
10
1
Forward Current (mAmps)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Forward Voltage (Volts)
125 °C 85 °C -25 °C
25 °C
0
0.1
1
10
100
Reverse Current (nA)
01020304050607080
Reverse Voltage (Volts)
25 °C
85 °C
125 °C
120
100
80
60
40
20
0
0255075100 125 150
I0 Current (%)
Ambient Temperature (°C)
Mounting on glass epoxy PCBs
5.0
4.0
3.0
2.0
1.0
0.0
0246 8101214
Capacitance Between Terminals (pF)
Reverse Voltage (Volts)
F = 100 MHz
Ta = 25 ° C
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Switching Chip Diode Series - 0805 / 1206
Rating and Characteristic Curves: CDxxxx-S01575
Derating Curve Capacitance Between Terminals
Forward Characteristics Reverse Characteristics
1000
100
1
Forward Current (mAmps)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Forward Voltage (Volts)
10
125 °C 85 °C -25 °C
25 °C
0
0.1
Reverse Current (nA)
1.0
10.0
100.0
01020304050607080
Reverse Voltage (Volts)
25 °C
85 °C
125 °C
120
100
80
60
40
20
0
0255075100 125 150
I0 Current (%)
Ambient Temperature (°C)
Mounting on glass epoxy PCBs
5.0
4.0
3.0
2.0
1.0
0.0
0246 8101214
Capacitance Between Terminals (pF)
Reverse Voltage (Volts)
F = 100 MHz
Ta = 25 °C
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Switching Chip Diode Series - 0805 / 1206
Rating and Characteristic Curves: CDxxxx-S0180R
Derating Curve Capacitance Between Terminals
Forward Characteristics Reverse Characteristics
1000
100
1
Forward Current (mAmps)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Forward Voltage (Volts)
10
125 °C 85 °C -25 °C
25 °C
0
0.1
Reverse Current (nA)
1.0
10.0
100.0
020406080
Reverse Voltage (Volts)
25 °C
85 °C
125 °C
120
100
80
60
40
20
0
0255075100 125 150
I0 Current (%)
Ambient Temperature (°C)
Mounting on glass epoxy PCBs
5.0
4.0
3.0
2.0
1.0
0.0
0246 8101214
Capacitance Between Terminals (pF)
Reverse Voltage (Volts)
F = 100 MHz
Ta = 25 °C
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Switching Chip Diode Series - 0805 / 1206
Packaging Information
The product will be dispensed in Tape and Reel format (see diagram below).
COPYRIGHT© 2003, BOURNS, INC. LITHO IN U.S.A. 10/03 e/IPA0303
.......
....... ....... .............. ....... ..............
P A
F
ET
120 °
D2
DD
1
W1
C
Index Hole
P
0
P
1
W
B
10 pitches (min.)
Direction of Feed
10 pitches (min.)
End
Trailer Device Leader
Start
d
Item Symbol 0805 1206
Carrier Width A 1.55 ± 0.10 1.70 ± 0.10
(0.061 - 0.004) (0.067 - 0.004)
Carrier Length B 2.30 ± 0.10 3.40 ± 0.10
(0.091 - 0.004) (0.134 - 0.004)
Carrier Depth C 1.25 ± 0.10 1.25 ± 0.10
(0.049 - 0.004) (0.049 - 0.004)
Sprocket Hole d 1.55 ± 0.05 1.55 ± 0.10
(0.061 - 0.002) (0.061 - 0.004)
Reel Outside Diameter D 178 178
(7.008) (7.008)
Reel Inner Diameter D160.0 MIN. 60.0 MIN.
(2.362) (2.362)
Feed Hole Diameter D213.0 ± 0.20 13.0 ± 0.20
(0.512 - 0.008) (0.512 - 0.008)
Sprocket Hole Position E 1.75 ± 0.10 1.75 ± 0.10
(0.069 - 0.004) (0.069 - 0.004)
Punch Hole Position F 3.50 ± 0.05 3.50 ± 0.05
(0.138 - 0.002) (0.138 - 0.002)
Punch Hole Pitch P 4.00 ± 0.10 4.00 ± 0.10
(0.157 - 0.004) (0.157 - 0.004)
Sprocket Hole Pitch P04.00 ± 0.10 4.00 ± 0.10
(0.157 - 0.004) (0.157 - 0.004)
Embossment Center P12.00 ± 0.05 2.00 ± 0.05
(0.079 - 0.002) (0.079 - 0.002)
Overall Tape Thickness T 0.25 ± 0.05 0.20 ± 0.05
(0.010 - 0.002) (0.008 - 0.002)
Tape Width W 8.00 ± 0.20 8.00 ± 0.20
(0.315 - 0.008) (0.315 - 0.008)
Reel Width W113.5 MAX. 13.5 MAX.
(0.531) (0.531)
Quantity per Reel -- 3,000 3,000
Devices are packed in accordance with EIA standard
RS-481-A and specifications shown here.
MM
(INCHES)
DIMENSIONS:
