SOT-23 Plastic-Encapsulate Transistors Wi , MMBTAS92LT1 TRANSISTOR (PNP) 1.BASE 2.EMITTER 3.COLLECTOR UNIT: mm FEATURES MES Miner Pom: 0.3W (Tamb=25T > G(eeGhG and storage junction temperature range Tu, Tstg :-55C to+150C ELECTRICAL CHARACTERISTICS (Tamp=25C unless otherwise specified) Collector-base breakdown voltage V(8R)}CBO Ic=-100n A, f=0 Collector-emitter breakdown voitage V(BR)CEO Ic=-1mA, IB=0 -300 Vv Emitter-base breakdown voltage V(BR)EBO le=-100 A, IB=0 -5 Vv Collector cut-off current icBo VcB=-200V ,leE=0 -0.25 BA Emitter cut-off current leBo VeB=-3V,ic=OMA -0.25 nA AFE(1) Vce=-10V, Ic=-1mA 25 DC current gain NFE(2) VcE=-10V, ic=-10mA 100 200 hre(3) Vce=-10V, ic=-50mA 25 Collector-emitter saturation voltage VCEsat ic=-20mA,lB=-2mA -0.5 Vv Base-emitter saturation voltage VBEsat ic=-20mA,IB=-2mA -0.9 Vv Transition frequency fr Vce=-5V ,ic=-10mA,f=30MHz 50 MHz DEVICE MARKING : MMBTA42LT1=2D 198199 MOC. Typical Characteristics MMBTAQ92LT1 Vce=10Vdc & 8 hre,DC CURRENT GAIN 8 8 a So Oo 0.1 1.0 10 100 Ic, COLLECTOR CURRENT (mA) DBC Current Gain clo a VcEsat @25 C, IciB = 10 ST Vcesat@125 C, Icle = 10 Se VCE sat @-55 C, Icla = 10 VV BEsat @25'C, Icla = 10 as VBEsat @125 C, Iclp = 10 "7 > 7s > s = = Veesat @-55 C, Icla = 10 V, VOLTAGE (VOLTS) _ oo VE 125 C, VE = 10V VBE @-55 C, VcE = 10V 0.1 1.0 10 100 Ic, COLLECTOR CURRENT (mA) "ON" Voltages N15 = xr 13 aa 5 LL PL Qa a me =i om a 2 JL & 90 z | f z o 70 5 Fa 7 Ts=25 C _ VceE =20Vde 3 30 F=20MHz ~ e eo |_| 1 3 5 7 9 110061302dS (aed 1D Ic, COLLECTOR CURRENT (mA) CurrentGain Bandwidth