International Rectifier HEXFET Power MOSFET Dynamic dv/dt Repetitive Avalanche Rated Isolated Central Mounting Hole Ease of Paralleling Simple Drive Requirements e e Fast Switching e e Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low PD-9.444C IRFP240 Rating Voss = 200V Rpsvon) = 0.180 ; Ip = 20A on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications . where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Absolute Maximum Ratings TO-247AC Parameter Max. Units lp @ Tc = 25C Continuous Drain Current, Vas @ 10 V 20 Ip @ Tc = 100C | Continuous Drain Current, Vas @ 10 V 12 A lpm Pulsed Drain Current 80 Pp @ Tc = 25C __| Power Dissipation 150 Ww Linear Derating Factor 1.2 WIC Ves Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ 510 mJ lar Avalanche Current 20 A Ear Repetitive Avalanche Energy 15 mJ dv/dt Peak Diode Recovery dv/dt_ 5.0 Vins Ts Operating Junction and -55 to +150 TstG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibfsin (1.1 Nem) | Thermal Resistance | Parameter Min. Typ. Max. Units Rac Junction-to-Case = _ 0.83 Recs Case-to-Sink, Flat, Greased Surface 0.24 CW Resa Junction-to-Ambient = 40 | 953.IRFP240 Electrical Characteristics @ Tj = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vier)pss Drain-to-Source Breakdown Voltage 200 | _ V__ | Vas=0V, Ib= 2501A AV (erypss/ATy| Breakdown Voltage Temp. Coefficient | 0.29 | | VC | Reference to 25C, Ib= 1mA Rosion) Static Drain-to-Source On-Resistance al | 018} Q | Ves=10V, Ip=12A @ Vasith) Gate Threshold Voltage 2.0 _ 4.0 V__ | Vos=Vas, Ip= 250nA Gis Forward Transconductance 6.9 _ S. | Vps=50V, Ip=12A Ipss Drain-to-Source Leakage Current 26 HA Vos=200V, Vas=0V _ 250 Vos=160V, Ves=0V, Ty=125C lass Gate-to-Source Forward Leakage _ _ 100 nA Ves=20V Gate-to-Source Reverse Leakage _ | -100 Vaes=-20V Qg Total Gate Charge _ _ 70 Ip=18A Qgs Gate-to-Source Charge _ _ 13 nC | Vps=160V Qou Gate-to-Drain ("Miller") Charge 39 Ves=10V See Fig. 6 and 13 ta(on) Turn-On Delay Time 14 _ Vpp=100V tr Rise Time _ 51 _ ns Ip=18A tajott Turm-Off Delay Time _ 45 _ Re=9.10 tt Fall Time _ 36 _ Ro=5.4Q See Figure 10 Lo Internal Drain Inductance _ 5.0 _ emo oad ) @ nH | from package Ls _ | Internal Source Inductance 13 = and center of die contact 8 Ciss Input Capacitance | 1300; Veas=0V Coss Output Capacitance | 400]; pF | Vos= 25V Crss Reverse Transfer Capacitance _ 130 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current | | 20 MOSFET symbol p (Body Diode) A showing the ism Pulsed Source Current _ _ 80 integral reverse & (Body Diode) p-n junction diode. s Vsp Diode Forward Voltage _ _ 2.0 Vs | Ty=25C, ls=20A, Vas=0V tre Reverse Recovery Time _ 300 | 610 ns | Ty=25C, tr=18A Qr Reverse Recovery Charge _ 34 | 74 uC | di/dt=100A/us @ ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) Notes: @ Repetitive rating; pulse width limited by Isps18A, di/dts150A/us, Vop<V(BR)Dss, max. junction temperature (See Figure 11) Tys150C Vpp=50V, starting Ty=25C, L=1.9mMH Pulse width < 300 us; duty cycle <2%. Re=25Q, las=20A (See Figure 12) 964IRFP240 g g E E <x =< =< g 5 5 3 3 & < a o 5 a 4.5V 20us PULSE WIDTH 20us PULSE WIDTH To = 25C To = 150C 107 401 Vps, Drain-to-Source Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, To=25C Tco=150C gD Oo Cc B25 a a = 10 < O ~ 2.0 QO = 8 2 Do es 5 3 w 1.5 6 BE c 23 g 1.0 a a . a 4 z 0.8 Vpg = 5OV B tot 20us PULSE WIDTH Veg = 10V 4 40 0.05 -40 -20 0 20 40 60 80 100 120 140 160 Vas, Gate-to-Source Voltage (volts) Ty, Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 955IRFP240 Capacitance (pF) Isp, Reverse Drain Current (Amps) 3000 20 5 = OV, f = IMHz Ciss = Cgs + Cgq, Cag SHORTED c ad + Vog = 160V Vpg = 100V Vpg = 40V 2500 A a ied 3 3 3S eS 0 1500 @ 1000 Ves, Gate-to-Source Voltage (volts) FOR TEST CIRCUIT SEE FIGURE 13 $00 so! % 4 30 45 75 Vps, Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 103 OPERATION IN THIS AREA LIMITED 5 BY Fos (ON) @e E 102 so! = 5 5 5 O 2 @ 10 a a 5 109 2 ty j=1500 Veg = OV INGLE PULSE 0. 4. 4 1.50 2 5 40 2 5 102 2 5 103 Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7.. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 956Ip, Drain Current (Amps) IRFP240 Ro Vos WA D.U.T, i >2Vop Ybiov Pulse Width < 1s Duty Factor < 0.1% LL es V\ [D"N | | | | | | | | t 10% 25 50 75 100 425 150 Ves L beg pete tel Tc, Case Temperature (C) telon) tr. tao) th Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature ; SINGLE PULSE For Thermal Response (Zajc) {THERMAL RESPONSE) trl 1. DUTY FACTOA, D=ti/t2 2. PEAK Ty=Pom X Zthjc + Te 10 105 104 103 198 0.4 4 10 t), Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 957IRFP240 Vary tp to obtain Vos > required las 1200 > 1 > 200 o cc uw . . os : 2 500 Fig 12a. Unclamped Inductive Test Circuit 3 a 2 oc) 400 a Q 200 Lu Vv Dp = 50Vv DS 25 50 75 400 125 450 Starting Ty, Junction Temperature(C) lag ~ Ke Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator | | | ! ! I I a . tovf ae e+R RR EEESSESESS=G Qas +< Gap Va Ig = | Charge Current Sampling rewstors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1511 Appendix C: Part Marking Information See page 1517 international Rectifier 958