OptiMOS Power-Transistor Product Summary
VDS 30 V
RDS(on) 10 mΩ
ID30 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Low On-Resistance RDS(on)
• Excellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
PG-TO252-3
Marking
2N03L10
Type Package
SPD30N03S2L-10GPG-TO252-3
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current1)
TC=25°C
ID
30
30
A
Pulsed drain current
TC=25°C
ID puls 120
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25Ω
EAS 150 mJ
Repetitive avalanche energy, limited by Tjmax2) EAR 10
Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
dv/dt6kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TC=25°C
Ptot 100 W
Operating and storage temperature T
j
, T
stg
-55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
SPD30N03S2L-10 G
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° Pb-free lead plating; RoHS compliant
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC -11.5 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 100
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
RthJA
-
-
-
-
75
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
V(BR)DSS 30 - - V
Gate threshold voltage, VGS = VDS
ID=50µA
VGS(th) 1.2 1.6 2
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
IDSS
-
-
0.01
10
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS -1 100 nA
Drain-source on-state resistance
VGS=4.5V, ID=30A
RDS(on) -11.2 14.6 Ω
Drain-source on-state resistance
VGS=10V, ID=30
RDS(on) -7.8 10 mΩ
1Current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 76A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
SPD30N03S2L-10 G
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Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=30A
23.8 47.5 -S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
-1160 1550 pF
Output capacitance Coss -450 600
Reverse transfer capacitance Crss -120 175
Turn-on delay time td(on) VDD=15V, VGS=10V,
ID=30A,
RG=5.4Ω
-6.1 9.2 ns
Rise time tr-13 20
Turn-off delay time td(off) -27 41
Fall time tf-17 26
Gate Charge Characteristics
Gate to source charge Qgs VDD=24V, ID=30A -3.7 4.9 nC
Gate to drain charge Qgd -10.9 16.3
Gate charge total QgVDD=24V, ID=30A,
VGS=0 to 10V
-31.4 41.8
Gate plateau voltage V(plateau) VDD=24V, ID=30A -3.4 -V
Reverse Diode
Inverse diode continuous
forward current ISTC=25°C - - 30 A
Inv. diode direct current, pulsed ISM - - 120
Inverse diode forward voltage VSD VGS=0V, IF=30A -0.9 1.2 V
Reverse recovery time trr VR=-V, IF=lS,
diF/dt=100A/µs
-31 39 ns
Reverse recovery charge Qrr -29 37 nC
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1 Power dissipation
Ptot = f (TC)
parameter: VGS≥ 4 V
0 20 40 60 80 100 120 140 160°C 190
TC
0
10
20
30
40
50
60
70
80
90
W
110 SPD30N03S2L-10
Ptot
2 Drain current
ID = f (TC)
parameter: VGS≥ 10 V
0 20 40 60 80 100 120 140 160°C 190
TC
0
4
8
12
16
20
24
A
32 SPD30N03S2L-10
ID
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPD30N03S2L-10
ZthJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
10 -1 10 0 10 1 10 2
VVDS
0
10
1
10
2
10
3
10
A
SPD30N03S2L-10
ID
R DS(on) = V DS / I D
1 ms
100 µs
tp = 10.0µs
SPD30N03S2L-10 G
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5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
00.5 11.5 22.5 33.5 4V5
VDS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
75 SPD30N03S2L-10
ID
VGS [V]
a
a3.0
b
b3.5
cc4.0
d
d4.5
e
e5.0
f
Ptot = 100W
f5.5
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0 10 20 30 40 A60
ID
0
4
8
12
16
20
24
mΩ
32 SPD30N03S2L-10
RDS(on)
VGS [V] =
b
b
3.5
c
c
4.0
d
d
4.5
e
e
5.0
f
f
5.5
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
00.5 11.5 22.5 33.5 4 V 5
VGS
0
5
10
15
20
25
30
35
40
45
50
A
60
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
0 10 20 30 40 A 60
ID
0
5
10
15
20
25
30
35
40
45
50
S
60
gfs
SPD30N03S2L-10 G
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9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 30 , VGS = 10 V
-60 -20 20 60 100 140 °C 200
Tj
0
2
4
6
8
10
12
14
16
18
20
mΩ
24 SPD30N03S2L-10
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60 -20 20 60 100 °C 180
Tj
0
0.5
1
1.5
V
2.5
VGS(th)
0,4mA
50µA
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
0 5 10 15 20 V 30
VDS
2
10
3
10
4
10
pF
C
Coss
Crss
Ciss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
00.4 0.8 1.2 1.6 22.4 V3
VSD
0
10
1
10
2
10
3
10
A
SPD30N03S2L-10
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 175 °C typ
Tj = 175 °C (98%)
SPD30N03S2L-10 G
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13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 30 A , VDD = 25 V, RGS = 25 Ω
25 45 65 85 105 125 145 °C 185
Tj
0
20
40
60
80
100
120
mJ
160
EAS
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 30 A pulsed
0 5 10 15 20 25 30 35 40 nC 50
QGate
0
2
4
6
8
10
12
V
16 SPD30N03S2L-10
VGS
0,8 VDS max
DS max
V0,2
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
-60 -20 20 60 100 140 °C 200
Tj
27
28
29
30
31
32
33
34
V
36 SPD30N03S2L-10
V(BR)DSS
SPD30N03S2L-10 G
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Package outline: PG-TO252-3
SPD30N03S2L-10 G
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Page
SPD30N03S2L-10 G
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