SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary * N-Channel VDS 30 V * Enhancement mode R DS(on) 10 m * Logic Level ID 30 A * Low On-Resistance R DS(on) PG-TO252-3 * Excellent Gate Charge x R DS(on) product (FOM) * Superior thermal resistance * 175C operating temperature * Avalanche rated * dv/dt rated Pb-free lead plating; RoHS compliant Type Package SPD30N03S2L-10G PG-TO252-3 Marking 2N03L10 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Value Unit A 30 TC=25C 30 ID puls 120 EAS 150 Repetitive avalanche energy, limited by Tjmax 2) EAR 10 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS 20 V Power dissipation Ptot 100 W -55... +175 C Pulsed drain current TC=25C Avalanche energy, single pulse mJ ID=30 A , V DD=25V, RGS=25 kV/s IS=30A, VDS=24V, di/dt=200A/s, T jmax=175C TC=25C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 http://store.iiic.cc/ 02-09-2008 SPD30N03S2L-10 G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 1 1.5 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID=50A Zero gate voltage drain current A IDSS V DS=30V, VGS=0V, Tj=25C - 0.01 1 V DS=30V, VGS=0V, Tj=125C - 10 100 IGSS - 1 100 nA RDS(on) - 11.2 14.6 RDS(on) - 7.8 10 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=30A Drain-source on-state resistance m V GS=10V, I D=30 1Current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 76A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 http://store.iiic.cc/ 02-09-2008 SPD30N03S2L-10 G Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 23.8 47.5 - Dynamic Characteristics Transconductance VDS 2*ID *RDS(on)max, gfs S ID =30A Input capacitance Ciss VGS =0V, VDS =25V, - 1160 1550 pF Output capacitance Coss f=1MHz - 450 600 Reverse transfer capacitance Crss - 120 175 Turn-on delay time td(on) VDD =15V, VGS =10V, - 6.1 9.2 Rise time tr ID =30A, - 13 20 Turn-off delay time td(off) RG =5.4 - 27 41 Fall time tf - 17 26 - 3.7 4.9 - 10.9 16.3 - 31.4 41.8 V(plateau) VDD =24V, ID =30A - 3.4 - V IS - - 30 A - - 120 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =24V, ID =30A VDD =24V, ID =30A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0V, IF=30A - 0.9 1.2 V Reverse recovery time trr V R=-V, IF=lS, - 31 39 ns Reverse recovery charge Qrr diF/dt=100A/s - 29 37 nC Page 3 http://store.iiic.cc/ 02-09-2008 SPD30N03S2L-10 G 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS 4 V parameter: VGS 10 V SPD30N03S2L-10 110 SPD30N03S2L-10 32 W A 90 24 70 ID P tot 80 20 60 16 50 12 40 30 8 20 4 10 0 0 20 40 60 80 0 100 120 140 160 C 190 0 20 40 60 80 100 120 140 160 C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 C parameter : D = t p/T 10 3 SPD30N03S2L-10 10 1 SPD30N03S2L-10 K/W A 10 DS 2 Z thJC /I D t = 10.0s p DS (on ) = ID V 10 0 10 -1 10 -2 R 100 s D = 0.50 10 0.20 1 0.10 1 ms 0.05 single pulse 10 0.02 -3 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 VDS Page 4 http://store.iiic.cc/ -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp 02-09-2008 0 SPD30N03S2L-10 G 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25C RDS(on) = f (I D) parameter: tp = 80 s parameter: VGS SPD30N03S2L-10 75 A SPD30N03S2L-10 32 Ptot = 100W m 60 55 c ID 50 45 b c 3.0 b 3.5 c 4.0 d 4.5 e 5.0 f 5.5 R DS(on) V [V] GS a fe d 40 24 20 16 35 30 12 d 8 f b 25 e 20 15 10 4 VGS [V] = a b 3.5 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 c 4.0 d 4.5 e 5.0 f 5.5 0 V 5 0 10 20 30 40 A 8 Typ. forward transconductance ID= f ( V GS ); V DS 2 x ID x RDS(on)max g fs = f(I D); T j=25C parameter: tp = 80 s parameter: g fs 60 60 A S 50 50 45 45 40 40 g fs ID 7 Typ. transfer characteristics 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 60 ID VDS V 5 VGS Page 5 http://store.iiic.cc/ 0 0 10 20 30 40 A 60 ID 02-09-2008 SPD30N03S2L-10 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 30 , VGS = 10 V parameter: VGS = VDS SPD30N03S2L-10 24 2.5 m V 18 0,4mA V GS(th) R DS(on) 20 16 1.5 14 12 98% 50A 10 1 typ 8 6 0.5 4 2 0 -60 -20 20 60 140 C 100 0 -60 200 -20 20 60 C 100 Tj 180 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 s 10 4 10 3 SPD30N03S2L-10 A pF 10 10 2 10 1 IF C Ciss 3 Coss T j = 25 C typ T j = 175 C typ Crss T j = 25 C (98%) T j = 175 C (98%) 10 2 0 10 5 10 15 20 V 30 V DS Page 6 http://store.iiic.cc/ 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD 02-09-2008 SPD30N03S2L-10 G 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D = 30 A , V DD = 25 V, R GS = 25 parameter: ID = 30 A pulsed 160 mJ V 12 VGS 120 E AS SPD30N03S2L-10 16 100 10 80 8 60 6 40 4 20 2 0 25 45 65 85 105 125 145 C 185 Tj 0,2 VDS max 0,8 VDS max 0 0 5 10 15 20 25 30 35 40 nC 50 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPD30N03S2L-10 V(BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Page 7 http://store.iiic.cc/ 02-09-2008 SPD30N03S2L-10 G Package outline: PG-TO252-3 Page 8 http://store.iiic.cc/ 02-09-2008 SPD30N03S2L-10 G Page 9 http://store.iiic.cc/ 02-09-2008