GEN2 SiC Schottky Diode LSIC2SD120D10, 1200 V, 10 A, TO-263-2L LSIC2SD120D10 RoHS Description SiC This series of silicon carbide (SiC) Schottky diodes has reverse recovery current, high surge capability, Schottkynegligible Diode and a maximum operating junction temperature of 175 C. This diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features * P ositive temperature coefficient for safe operation and ease of paralleling * 1 75 C maximum operating junction temperature * E xtremely fast, temperature-independent switching behavior * D ramatically reduced switching losses compared to Si bipolar diodes * Excellent surge capability Circuit Diagram TO-263-2L Applications Case Case * B oost diodes in PFC or DC/DC stages * S witch-mode power supplies 1 * Solar inverters * Industrial motor drives * EV charging stations * U ninterruptible power supplies 2 1 2 Environmental * L ittelfuse "RoHS" logo = RoHS conform RoHS * L ittelfuse "HF" logo = Halogen Free * L ittelfuse "Pb-free" logo = Pb Pb-free lead plating Maximum Ratings Characteristics Repetitive Peak Reverse Voltage Symbol Conditions Value Unit VRRM - 1200 V V DC Blocking Voltage VR Tj = 25 C 1200 TC = 25 C 28 Continuous Forward Current IF TC = 125 C 15 TC = 151 C 10 Non-Repetitive Forward Surge Current IFSM TC = 25 C, TP = 10 ms, Half sine pulse 80 Power Dissipation PTot Operating Junction Temperature A A TC = 25 C 136 TC = 110 C 59 TJ - -55 to 175 C Storage Temperature TSTG - -55 to 150 C Soldering Temperature (reflow MSL1) Tsold - 260 C W (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/21/18 Pb GEN2 SiC Schottky Diode LSIC2SD120D10, 1200 V, 10 A, TO-263-2L Electrical Characteristics Characteristics SiCConditions Schottky Diode Symbol Forward Voltage VF Reverse Current IR Total Capacitance C Value Min. Typ. Max. IF = 10 A, TJ = 25 C - 1.5 1.8 IF = 10 A, TJ = 175 C - 2.2 VR = 1200 V , TJ = 25 C - <1 VR = 1200 V , TJ = 175 C - 10 VR = 1 V, f =1 MHz - 582 VR = 400 V, f = 1 MHz - 53 VR = 800 V, f = 1 MHz - 40 - 57 Unit V 100 A pF VR Total Capacitive Charge QC VR = 800 V, C(V)dV Qc = 0 nC Footnote: TJ = +25 C unless otherwise specified Thermal Characteristics Characteristics Symbol Conditions RJC - Thermal Resistance Figure 1: Typical Foward Characteristics Value Typ. - 1.1 Unit Max. C/W Figure 2: Typical Reverse Characteristics 20 1E- 4 16 14 Reverse Current, I R (A) T J = -55 C TJ = 25 C TJ = 125 C TJ = 150 C TJ = 175 C 18 Forward Current (A) Min. 12 10 8 6 1E - 5 1E - 6 TJ = 175 C TJ = 150 C 1E - 7 TJ = 125 C TJ = 25 C 4 2 1E - 8 0 0 -0.5 0.5 1.5 2.5 3.5 4.5 200 400 600 800 1000 1200 Reverse Voltage, V R (V) Forward Voltage (V) (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/21/18 GEN2 SiC Schottky Diode LSIC2SD120D10, 1200 V, 10 A, TO-263-2L Figure 3: Power Derating Figure 4: Current Derating SiC Schottky Diode 120 160 140 10 % Duty 30 % Duty 50 % Duty 70 % Duty DC 100 Forward Current (A) 120 100 Power (W) 80 60 80 60 40 40 20 20 0 25 0 25 50 75 100 125 150 175 50 75 125 150 175 Case Temperature (C ) Case Temperature (C ) Figure 5: Capacitance vs. Reverse Voltage Figure 6: Capacitive Charge vs. Reverse Voltage 70 600 60 500 400 Capacive Charge (nC) Capacitance (pF) 100 300 200 100 50 40 30 20 10 0 1 10 Voltage (V) 100 1000 0 0 200 400 600 800 1000 Voltage (V) (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/21/18 GEN2 SiC Schottky Diode LSIC2SD120D10, 1200 V, 10 A, TO-263-2L Figure 7: Stored Energy vs. Reverse Voltage Figure 8: Transient Thermal Impedance SiC Schottky Diode 1E+00 18 Normalized Transient Thermal Impedance 0.5 16 Stored Energy (J) 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 0.3 1E-01 0.1 0.05 0.02 1E-02 1E-03 1E-06 0.01 Single 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 Pulse Width (s) Voltage (V) Dimensions-Package TO-263-2L Symbol Millimeters Min Nom Max A 4.30 4.50 4.70 A1 0.00 - 0.25 0.90 b 0.70 0.80 b1 1.17 1.27 1.37 c 0.46 0.50 0.60 c1 1.25 1.30 1.40 D 9.00 9.20 9.40 D1 6.50 6.70 6.90 10.20 E 9.80 10.00 E1 7.80 8.00 8.20 E2 9.70 9.90 10.10 e 5.08 BSC H 15.00 15.30 15.60 L 2.00 2.30 2.60 L1 1.00 1.20 1.40 L2 0.254 BSC (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/21/18 GEN2 SiC Schottky Diode LSIC2SD120D10, 1200 V, 10 A, TO-263-2L Part Numbering and Marking System SIC2SD120D10 LF YYWWF ZZZZZZ-ZZ Packing Option SIC = SiC Diode 2 = Gen2 SD = Schottky Diode 120 = Voltage Rating (1200 V) D = TO-263 Package (2 Lead) 10 = Current Rating (10 A) YY = Year WW = Week F = Special Code ZZZZZZ-ZZ = Lot Number Part Number SiC SchottkyLSIC2SD120D10 Diode Marking Packing Mode M.O.Q SIC2SD120D10 Tape and Reel 800 XXU\*WUX ZU^*WUX XU\*WUX {GGG*WUY X\U*WUX XWU^*WUX thGX^UY\ [UW*WUX XWGG Y[UW*WUZ YUW*WUX RWUX GXU\ TWUX XU^\*WUX TO-263 Carrier Reel Specifications ZU*WUX yWU\ XWU]*WUX XU\*WUX [U*WUX XU\*WUX WU^XUW X]UW*WUX ua XUGth{lyphsGaGwzOw Gz P YUGlzkOlGkPGjvu{yvsGaGslzzG{ohuG*GXWW} ZUGz|ymhjlGylzpz{hujlGaGslzzG{ohuGXW ^V [UG|GaGtGOP Y[U[ RYVTW wz ] WU X* YU \ GZZW*Z XWWG{w XZ {w XY {w lslj{yvupj zluzp{p}l kl}pjlz kvGuv{GvwluGvyGohuksl ljlw{Gh{h z{h{pjTmyllG~vyrz{h{pvu Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, Components intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/21/18