Solid State Devices Incorporated 14830 Valley View Avenue La Mirada, California 90638 Telephone (213) 921-9660 | TWX -910-583-4807 2N5303, SPT5303 200 WATT NPN SILICON POWER TRANSISTOR _ Xoo asG FEATURES MAXIMUM RATINGS HFE.............. 1560 @ 10 Amps VCE (sat).......... 2.0 V @ 20 Amps Fast Switching 1 usec Rise Time Excellent Safe Operating Area PHYSICAL DIMENSIONS In accordance with JEDEC ( TO-3 ) outline Rating Symbol | 9N5303 |SPT5303] Unit Collector-Emitter Voltage VcEO 80 100 Vde TOs a+ c Collector-Base Voltage Vog 80 100 Vde tbat | + Emitter-Base Voltage Vep 5 5 Vde * SEATING i Collector Current Continuous le 20 Adc 1 PA Base Current Ip 7.5 Adc omy bs SS . 2 WITTER Total Device Dissipation @ Tp = 25C Pp 200 Watts case: doLtetron Derate above 25C 1.14 wc om on ote Operating and Storage Junction Ty: Tot 6 ot 635 fires, 0780 | 04st Temperature Range 85 to +200 c oe TF 29.30 3040 | var! rie i 51067! 1118 | 0.420 ' 9.4407 H $21 877 9205 0.275 THERMAL CHARACTERISTICS - Tae [7715 | 968s sre L@ 3.84) 4.09 | 0151 o16t Characteristic Symbol Max. Unit 4 IRS Thermal Resistance, Junction to Case 8 Jc -875 c/w se ELECTRICAL CHARACTERISTICS Characteristic Fig. No. | Symbol | Min | Max | Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage* 2N5303 BV CEO (sus) * 80 Vde (Ip = 200 mAdc, |g = 0 ) SPT5303 100 Collector Cutoff Current lcEQ mAde. (Vee= 80 Vdc, Ip = 0 ) 2N5303 (Veg = 100 Vdc, Ip= 0 ) SPT 5303 Collector Cutoff Current lcex mAdc (Vor = 80 Vdc, VeB(ott) = 1.5 Vdc) 2N5303 1 (Veg = 100 Vdc, Vepiott) = 1.5 Vdc) SPT5303 1 (Voge = 80 Vdc, VeBioft) = 1.5 Vde, Tp = 150C) 2N5303 10 Collector Cutoff Current All Bo mAdc (Veg = Rated Veg: le = 0) Types 1 Emitter Cutoff Current All lego mAdc (Vee= 5 Vdc, Ip = 0) Types 5ELECTRICAL CHARACTERISTICS [ Characteristic | Fig.No. | Symbol | Min | Max | Unit | ON CHARACTERISTICS OC Current Gain* hee Ie = 1000 mAdc, Vee = 2 > Vdc) 40 All (lp = 10 Adc, Veg = 2. Vdc) Types 15 60 (Ig = 20 Adc, Vee 4 Vdc) 5 Collector-Emitter Saturation Voltage Vee(sat)* . Vdc (lg= 10 Adc,ig= 1 Adc) All 1 - _ Types (ie = 20 Adc, Ip = 2. Adc) 2 Base-Emitter Saturation Voltage VeeE(Sat)* Vdc (I= 10 Adc,Ig= 1 Adc) All 17 Types (Ip = 20 Adc, \p = 2 Adc) 2.5 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product All fy 2 MHz (Ip = 1000 mAdc, Voge 10 Vde,f= 1 MHz) Types SWITCHING CHARACTERISTICS Delay Time (Vec= 30 Vdc All Rise Time Ip = 10 Adc, 1g, = 1000 mAdc) Types t, 1000 ns Storage Time Vec = 30 Vdc, Ip 10 Adc, All t, 2 MS Fall Time Ip1=!go= 1000 mAdc) Types ty 1000 ns Pulse Test: Pulse Width 300 us, Duty Cycle =2% TYPICAL OPERATING CURVES 2 S la Te 80 200 50 = 2 =< 20 a - = 60 150 Te = 19 2N5303 2 N x x 50 ~ o x ec Ty = 200C =& 40 100 Ly Ta a 2 20 Secondary Breakdown Limited $ NY 3 - Bonding Wire Limited c _ N a 1.0 ~~ Thermal Limitations Te = asec = 20 40 Ns 2 05 Pluse Duty Cycle 10% = MAN 2 2N530 2 MAN ~ ! a SN 02 2N5302 0 0 ~ 01 80 100 120 140 160 180 200 1.0 20 3.0 5.0 10 20-30 50 100 TEMPERATURE (-) Vee. COLLECTOR EMITTER VOLTAGE (VOLTS) form SM SSDI