DATA SHEET
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5509
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER ⋅
⋅⋅⋅ LOW NOISE ⋅
⋅⋅⋅ HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
Document No. PU10009EJ01V0DS (1st edition)
Date Published October 2001 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2001
FEATURES
• Ideal for medium output power amplification
• NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
• Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz
•f
T = 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number Quantity Supplyi ng Form
2SC5509 50 pcs (Non reel) • 8 mm wide embos sed taping
2SC5509-T2 3 kpcs / reel • Pin 1 (Emi tter), Pin 2 (Collec tor) face the perforati on s i de of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 15 V
Collector to Emitter Voltage VCEO 3.3 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC100 mA
Total Power Dissipation Ptot Note 190 mW
Junction Temperature Tj150 °C
Storage Temperat ure Tstg −65 to +150 °C
Note Free Air
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
Data Sheet PU10009EJ01V0DS
2
2SC5509
THERMAL RESISTANCE
Parameter Symbol Ratings Unit
Junct i on t o Case Resis tance Rth j-c 95 °C/W
Junct i on t o Ambient Resist ance Rth j-a 650 °C/W
ELECTRICAL CHARACTERISTICS (TA = +25°
°°
°C)
Parameter Symbol Test Condit i ons MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, I E = 0 mA −−
600 nA
Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 mA −−
600 nA
DC Current Gain hFE Note 1 VCE = 2 V, IC = 10 mA 50 70 100 −
RF Characteristics
Gain Bandwidth Product fTVCE = 3 V, I C = 90 mA, f = 2 GHz 13 15 −GHz
Insertion Power Gain S21e2VCE = 2 V, IC = 50 mA, f = 2 GHz 8 11 −dB
Noise Figure NF VCE = 2 , IC = 10 mA, f = 2 Hz,
ZS = Zopt –1.21.7dB
Reverse Transfer Capacitance Cre Note 2 VCB = 2 V, IE = 0 mA, f = 1 MHz −0.5 0.75 pF
Maximum Available Power Gain MAG Note 3 VCE = 2 V, IC = 50 mA, f = 2 GHz −14 −dB
Maximum Stable Power Gain MSG Note 4 VCE = 2 V, IC = 50 mA, f = 2 GHz −15 −dB
Gain 1 dB Compression Output Power PO (1 dB) VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz −17 −dBm
3rd Order Intermodul at i on Di storti on
Output Intercept Point OIP3VCE = 2 V, I C = 70 m A Note 5, f = 2 GHz −27 −dBm
Notes 1. Pulse measurement: PW ≤ 350
µ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
4. MSG =
5. Collector current when PO (1 dB) is output
hFE CLASSIFICATION
Rank FB
Marking T80
hFE Value 50 to 100
(K – √
√√
√ (K2 – 1) )
S21
S12
S21
S12
Data Sheet PU10009EJ01V0DS 3
2SC5509
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°
°°
°C)
Thermal/DC Characteristics
V
CE
= 2 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
40
30
20
10
0 0.40.2 0.6 0.8 1.0 1.2
400
350
300
250
200
150
190
330
100
50
0 25 50 75 100 125 150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C), Case Temperature T
C
(˚C)
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
When case temperature
is specified
Mounted on
ceramic substrate
(15 × 15 mm, t = 0.6 mm)
Free Air
200
100
150
50
00.01 0.10.001 1 10 100
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
150
50
100
021435
200 A
µ
100 A
µ
300 A
µ
400 A
µ
500 A
µ
600 A
µ
700 A
µ
800 A
µ
900 A
µ
1 000 A
µ
I
B
= 1 100 A
µ
Capacitance/fT Characteristics
f = 1 MHz
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.00
0.60
0.80
0.20
0.40
0 1.0 3.0 4.02.0 5.0
V
CE
= 3 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
25
20
15
10
5
010 1001 1 000
Data Sheet PU10009EJ01V0DS
4
2SC5509
Gain Characteristics
V
CE
= 2 V
I
C
= 50 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
20
25
30
5
10
15
0
0.1 1.0 10.0
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 2 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
15
20
25
10
5
01 10 100
MAGMSG
|S
21e
|
2
Output Characteristics
V
CE
= 2 V
f = 1 GHz
25
20
15
10
5
0
–5
150
25
50
75
125
100
0
–15 0–5–10 5 10 15
Input Power P
in
(dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power P
out
(dBm)
Collector Current I
C
(mA)
P
out
I
C
V
CE
= 2 V
f = 2 GHz
25
20
15
10
5
0
–5
150
25
50
75
125
100
0
–15 0–5–10 5 10 15
Input Power P
in
(dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power P
out
(dBm)
Collector Current I
C
(mA)
P
out
I
C
Data Sheet PU10009EJ01V0DS 5
2SC5509
Noise Characteristics
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1 GHz
NF
G
a
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1.5 GHz
NF
G
a
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 2 GHz
NF
G
a
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 2.5 GHz
NF
G
a
Remark The graphs indicate nominal characteristics.
Data Sheet PU10009EJ01V0DS
6
2SC5509
S-PARAMETERS
VCE = 2 V, IC = 5 mA
Frequency S11 S21 S12 S22
(GHz)MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
0.79
0.75
0.73
0.71
0.69
0.68
0.67
0.67
0.67
0.67
0.67
0.67
0.67
0.67
0.68
0.68
0.69
0.69
0.69
0.70
0.71
0.71
0.72
0.72
0.72
0.73
0.72
0.73
0.73
0.74
0.80
−28.2
−53.3
−74.8
−92.9
−108.1
−121.0
−132.0
−141.6
−149.9
−157.3
−164.0
−170.0
−175.5
179.5
174.7
170.4
166.2
162.4
158.8
155.2
152.2
148.9
146.0
143.3
140.4
137.9
135.3
133.7
132.1
130.0
121.2
14.75
13.32
11.81
10.40
9.18
8.15
7.28
6.55
5.94
5.42
4.97
4.59
4.25
3.96
3.70
3.47
3.26
3.07
2.90
2.74
2.60
2.47
2.35
2.24
2.14
2.03
1.93
1.84
1.79
1.73
1.27
161.9
147.0
134.8
124.5
116.0
108.6
102.3
96.6
91.5
86.9
82.6
78.6
74.9
71.3
67.9
64.6
61.4
58.4
55.5
52.6
49.8
47.1
44.4
41.8
39.2
36.7
34.4
33.0
31.3
29.1
16.5
0.03
0.05
0.07
0.08
0.09
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
72.3
60.2
50.9
42.8
36.7
31.7
27.8
24.7
21.8
19.7
17.7
16.0
14.6
13.4
12.3
11.3
10.4
9.6
8.9
8.4
7.7
7.0
6.5
6.0
5.5
4.8
4.9
7.1
8.4
8.0
9.0
0.93
0.84
0.74
0.65
0.58
0.51
0.46
0.42
0.38
0.35
0.33
0.31
0.30
0.29
0.28
0.27
0.27
0.27
0.27
0.27
0.27
0.27
0.28
0.28
0.29
0.29
0.30
0.29
0.28
0.29
0.38
−19.5
−35.9
−49.6
−61.4
−71.5
−80.4
−88.6
−96.2
−103.3
−110.1
−116.6
−123.0
−129.1
−134.9
−140.6
−146.1
−151.4
−156.5
−161.2
−165.8
−170.2
−174.2
−178.1
178.2
174.6
170.4
165.9
162.7
162.4
161.5
149.8
Data Sheet PU10009EJ01V0DS 7
2SC5509
VCE = 2 V, IC = 10 mA
Frequency S11 S21 S12 S22
(GHz)MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
0.65
0.63
0.63
0.62
0.62
0.63
0.63
0.63
0.64
0.64
0.65
0.65
0.65
0.66
0.67
0.67
0.68
0.68
0.69
0.69
0.70
0.70
0.71
0.71
0.72
0.72
0.72
0.72
0.73
0.74
0.80
0.83
−42.0
−75.4
−100.3
−118.7
−132.8
−144.0
−153.1
−160.9
−167.5
−173.5
−178.7
176.5
172.1
168.0
164.2
160.7
157.2
154.0
151.0
148.0
145.4
142.6
140.1
137.7
135.1
132.9
130.5
129.0
127.8
126.0
118.7
107.5
23.47
19.87
16.55
13.88
11.82
10.22
8.97
7.96
7.15
6.47
5.89
5.41
4.99
4.63
4.32
4.04
3.79
3.56
3.36
3.17
3.01
2.86
2.71
2.58
2.46
2.34
2.22
2.11
2.05
1.99
1.45
1.09
156.3
138.3
125.1
115.1
107.2
100.7
95.1
90.3
86.0
82.0
78.4
75.0
71.7
68.6
65.6
62.8
60.0
57.3
54.7
52.1
49.7
47.3
44.9
42.5
40.2
37.9
35.8
34.6
33.1
31.1
19.9
5.8
0.03
0.04
0.05
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.10
0.10
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.12
0.13
0.14
67.9
53.8
45.8
39.3
35.3
32.5
30.7
29.3
28.2
27.5
26.8
26.5
25.9
25.6
25.3
24.8
24.3
23.9
23.4
23.1
22.7
21.9
21.4
20.9
20.2
19.6
19.7
21.2
21.6
20.6
17.6
13.1
0.88
0.75
0.63
0.54
0.48
0.43
0.40
0.37
0.36
0.34
0.34
0.33
0.33
0.33
0.33
0.33
0.33
0.34
0.34
0.35
0.35
0.36
0.37
0.37
0.38
0.39
0.39
0.39
0.38
0.39
0.47
0.53
−29.3
−52.4
−70.5
−85.4
−97.8
−108.7
−118.3
−127.1
−135.0
−142.2
−148.8
−154.9
−160.6
−165.8
−170.6
−175.0
−179.2
176.9
173.3
169.8
166.7
163.7
160.8
158.0
155.2
152.2
148.9
145.9
145.0
144.3
136.2
125.3
Data Sheet PU10009EJ01V0DS
8
2SC5509
VCE = 2 V, IC = 20 mA
Frequency S11 S21 S12 S22
(GHz)MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
0.50
0.54
0.57
0.59
0.60
0.61
0.61
0.62
0.63
0.63
0.64
0.64
0.65
0.66
0.66
0.67
0.67
0.68
0.68
0.69
0.70
0.70
0.71
0.71
0.72
0.72
0.72
0.72
0.72
0.74
0.80
0.83
−63.8
−103.8
−127.4
−142.7
−153.8
−162.3
−169.2
−175.1
179.8
175.2
171.1
167.2
163.7
160.3
157.1
154.1
151.2
148.5
145.8
143.2
140.9
138.4
136.2
134.0
131.6
129.6
127.3
125.8
124.9
123.4
116.8
106.4
33.35
25.91
20.30
16.37
13.60
11.58
10.05
8.86
7.91
7.12
6.47
5.93
5.46
5.06
4.70
4.40
4.12
3.87
3.65
3.44
3.26
3.10
2.94
2.80
2.66
2.53
2.41
2.28
2.22
2.16
1.54
1.16
149.5
129.5
116.5
107.3
100.5
94.9
90.1
86.0
82.2
78.8
75.6
72.5
69.6
66.9
64.1
61.6
59.0
56.5
54.2
51.8
49.5
47.3
45.1
42.9
40.7
38.6
36.6
35.5
34.4
32.4
22.1
8.9
0.02
0.03
0.04
0.04
0.05
0.05
0.05
0.06
0.06
0.06
0.07
0.07
0.07
0.08
0.08
0.08
0.09
0.09
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.13
0.14
64.8
50.4
44.2
41.0
39.5
39.0
38.8
38.9
38.8
38.8
38.7
38.6
38.3
38.0
37.5
37.0
36.3
35.7
35.0
34.3
33.5
32.5
31.7
30.8
29.8
28.9
28.6
29.6
29.9
28.1
23.2
15.7
0.81
0.65
0.55
0.48
0.44
0.42
0.40
0.39
0.39
0.38
0.38
0.38
0.39
0.39
0.40
0.40
0.41
0.41
0.42
0.42
0.43
0.44
0.45
0.45
0.46
0.47
0.48
0.47
0.46
0.47
0.55
0.60
−41.4
−71.4
−93.1
−109.7
−122.8
−133.6
−142.6
−150.4
−157.1
−163.0
−168.3
−173.1
−177.5
178.5
174.8
171.4
168.2
165.1
162.2
159.5
156.9
154.4
152.0
149.6
147.3
144.8
142.0
139.1
138.1
137.6
130.3
119.8
Data Sheet PU10009EJ01V0DS 9
2SC5509
VCE = 2 V, IC = 50 mA
Frequency S11 S21 S12 S22
(GHz)MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
0.39
0.51
0.56
0.58
0.60
0.61
0.62
0.62
0.63
0.64
0.64
0.65
0.65
0.66
0.67
0.67
0.68
0.68
0.69
0.70
0.70
0.71
0.71
0.72
0.72
0.73
0.73
0.72
0.72
0.74
0.81
0.84
−99.2
−133.4
−150.6
−161.3
−169.1
−175.2
179.7
175.2
171.3
167.6
164.2
161.0
158.0
155.2
152.4
149.8
147.1
144.8
142.4
140.0
137.9
135.6
133.5
131.5
129.3
127.4
125.1
123.4
122.9
121.6
115.4
105.2
41.74
29.88
22.35
17.59
14.41
12.16
10.50
9.22
8.20
7.38
6.70
6.12
5.63
5.21
4.84
4.52
4.23
3.98
3.75
3.54
3.35
3.18
3.02
2.87
2.73
2.60
2.47
2.33
2.26
2.21
1.52
1.14
143.0
122.2
110.1
102.0
96.0
91.0
86.9
83.2
79.8
76.7
73.7
70.9
68.2
65.6
63.1
60.7
58.3
55.9
53.7
51.5
49.3
47.2
45.1
43.0
40.9
38.9
36.9
35.8
35.1
33.2
23.2
10.8
0.02
0.03
0.03
0.03
0.04
0.04
0.05
0.05
0.05
0.06
0.06
0.07
0.07
0.07
0.08
0.08
0.09
0.09
0.09
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.13
0.14
0.15
59.2
50.6
48.2
47.8
48.3
48.7
49.1
49.6
49.7
49.5
49.0
48.7
48.0
47.2
46.5
45.5
44.4
43.5
42.3
41.3
40.1
38.9
37.8
36.6
35.4
34.4
33.6
34.3
34.4
32.2
25.7
17.6
0.71
0.57
0.50
0.46
0.44
0.43
0.43
0.43
0.43
0.43
0.43
0.44
0.44
0.45
0.45
0.46
0.46
0.47
0.48
0.48
0.49
0.50
0.51
0.51
0.52
0.53
0.53
0.53
0.52
0.53
0.62
0.66
−55.1
−90.5
−113.6
−129.7
−141.6
−150.8
−158.3
−164.6
−169.9
−174.7
−178.9
177.3
173.8
170.5
167.4
164.5
161.8
159.1
156.7
154.2
152.0
149.8
147.6
145.5
143.4
141.1
138.6
135.7
134.7
134.4
126.9
126.5
Data Sheet PU10009EJ01V0DS
10
2SC5509
EQUAL NF CIRCLE
VCE = 2 V
IC = 10 mA
f = 1 GHz
Unstable Area
3.5 dB
NF
min
= 0.95 dB
Γ
opt
1.5 dB
3.0 dB
4.0 dB
2.0 dB
2.5 dB
VCE = 2 V
IC = 10 mA
f = 2 GHz
NF
min
= 1.1 dB
Γ
opt
2.0 dB
1.5 dB
2.5 dB
3.5 dB
4.0 dB
3.0 dB
Data Sheet PU10009EJ01V0DS 11
2SC5509
NOISE PARAMETERS
VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 20 mA
fNF
min GaΓopt Rn/50 f NFmin GaΓopt Rn/50
(GHz) (dB) (dB) MAG. ANG. (GHz) (dB) (dB) MAG. ANG.
0.8 0.70 18.0 0.17 93.0 0.11 0.8 1.12 20.7 0.30 −164.8 0.08
0.9 0.74 17.0 0.18 103.0 0.11 0.9 1.15 19.7 0.31 −162.7 0.09
1.0 0.78 16.2 0.20 112.7 0.11 1.0 1.18 18.8 0.32 −160.7 0.09
1.5 0.98 13.6 0.32 155.4 0.09 1.5 1.31 15.7 0.39 −151.5 0.10
1.8 1.10 12.5 0.40 176.2 0.07 1.8 1.38 14.4 0.45 −146.3 0.10
1.9 1.14 12.2 0.43 −177.8 0.06 1.9 1.41 14.0 0.47 −144.6 0.10
2.0 1.18 11.8 0.46 −172.2 0.06 2.0 1.43 13.6 0.49 −142.9 0.11
2.5 1.39 9.9 0.56 −151.8 0.08 2.5 1.56 11.5 0.56 −133.5 0.14
VCE = 2 V, IC = 10 mA VCE = 2 V, IC = 50 mA
fNF
min GaΓopt Rn/50 f NFmin GaΓopt Rn/50
(GHz) (dB) (dB) MAG. ANG. (GHz) (dB) (dB) MAG. ANG.
0.8 0.87 19.6 0.13 170.3 0.09 0.8 1.75 21.3 0.49 −159.4 0.10
0.9 0.90 18.6 0.15 171.5 0.09 0.9 1.78 20.3 0.49 −157.2 0.10
1.0 0.93 17.8 0.17 173.0 0.09 1.0 1.80 19.4 0.50 −154.9 0.11
1.5 1.07 14.8 0.30 −174.1 0.08 1.5 1.92 16.2 0.55 −144.7 0.14
1.8 1.15 13.6 0.39 −164.1 0.07 1.8 2.00 14.8 0.59 −139.1 0.17
1.9 1.18 13.2 0.41 −160.6 0.07 1.9 2.02 14.4 0.60 −137.3 0.19
2.0 1.20 12.8 0.44 −157.2 0.07 2.0 2.04 13.9 0.61 −135.5 0.20
2.5 1.35 10.9 0.53 −142.3 0.10 2.5 2.17 11.8 0.65 −126.4 0.28
Data Sheet PU10009EJ01V0DS
12
2SC5509
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (UNIT: mm)
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
0.59 ± 0.05
0.11
+0.1
–0.05
0.600.65
0.650.65
1.30
1.25
2.0 ± 0.1
12
43
1.25 ± 0.1
2.05 ± 0.1
0.30
+0.1
–0.05
0.40
+0.1
–0.05
0.30
+0.1
–0.05
0.30
+0.1
–0.05
T80
Data Sheet PU10009EJ01V0DS 13
2SC5509
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Condit i ons Recommended Condition Sy m bol
Infrared Refl ow Package peak temperature: 235°C or bel ow,
Time: 30 s econds or les s (at 210°C or higher),
Count: 2 ti m es or less, Ex posure limi t: None Note
IR30-00-2
VPS Package peak temperat ure: 215°C or below,
Time: 40 s econds or les s (at 200°C or higher),
Count: 2 ti m es or less, Ex posure limi t: None Note
VP15-00-2
Wave Solderi ng Soldering bath temperature: 260°C or bel ow,
Time: 10 seconds or less,
Count: 1 ti m e, Exposure limi t : None Note
WS60-00-1
Note After opening the dry pack, store it at 25°C or less and 65% RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For the details the recommended soldering conditions, refer to the document SEMICONDUCTOR DEVICE
MOUNTING TECHNOLOGY MANUAL (C10535E: published by NEC Corporation).
Data Sheet PU10009EJ01V0DS
14
2SC5509
M8E 00. 4 - 0110
The information in this document is current as of October, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-528-0301
FAX: +852-3107-7309
FAX: +886-2-2545-3859
FAX: +82-2-528-0302
NEC Electron Devices European Operations http://www.nec.de/
TEL: +49-211-6503-101 FAX: +49-211-6503-487
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0110
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com
Business issue
NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/
Sales Engineering Group, Sales Division
E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918
Technical issue
2SC5509
