DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 27 2004 Jan 22
DISCRETE SEMICONDUCTORS
PMBT2369
NPN switching transistor
2004 Jan 22 2
NXP Semiconductors Product data sheet
NPN switching transistor PMBT2369
FEATURES
•Low current (ma x. 20 0 mA)
•Low voltage (max. 15 V).
APPLICATIONS
•High-speed switching, especially in portable equipment.
DESCRIPTION
NPN switching tran sistor in a SOT23 plastic package.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
PMBT2369 *1J
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, halfpage
21
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating S ystem (IEC 60134).
Note
1. Transistor mounted on an FR4 printed- circuit board.
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
PMBT2369 −plastic surface mounted package; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter −40 V
VCEO collector-emitter voltage open base −15 V
VEBO emitter-base voltage open collector −5 V
ICcollector current (DC) −200 mA
ICM peak collector current −300 mA
IBM peak base current −100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
2004 Jan 22 3
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT2369
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed- circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 20 V −400 nA
IE = 0; VCB = 20 V; Tj = 125 °C−30 µA
IEBO emitter cut-off current IC = 0; VEB = 4 V −100 nA
hFE DC current gain IC = 10 mA; VCE = 1 V 40 120
IC = 10 mA; VCE = 1 V; Tamb = −55 °C20 −
IC = 100 mA; VCE = 2 V 20 −
VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA −250 mV
VBEsat base-emitt er saturatio n voltage IC = 10 mA; IB = 1 mA 700 850 mV
Cccollector capacitance IE = Ie = 0; VCB = 5 V; f = 1 MHz −4pF
fTtransition freque ncy IC = 10 mA; VCE = 10 V; f = 100 MHz 500 −MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton turn-on time ICon = 10 mA; IBon = 3 mA;
IBoff = −1.5 mA −10 ns
tddelay time −4ns
trrise time −6ns
toff turn-off time −20 ns
tsstorage time −10 ns
tffall time −10 ns
2004 Jan 22 4
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT2369
Vi = 0.5 to 4.2 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 1 kΩ; RB = 1 kΩ; RC = 270 Ω.
VBB = 0.2 V; VCC = 2.7 V.
Oscilloscope input impedance Zi = 50 Ω.
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
Fig.2 Test circuit for switching times.
2004 Jan 22 5
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT2369
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 22 6
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PMBT2369
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document befor e initiating or completing a design.
2. The product s ta tus of device(s) described in this do cument may have ch anged since this document was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t specification.
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General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
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reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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of an NXP Semiconductors product can reasonably be
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the tech nical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/04/pp7 Date of releas e : 2004 Jan 22 Document order number: 9397 750 12458
