BSM300GAR120DLC - Infineon Technologies [EUPEC]

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM300GAR120DLC

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung

collector-emitter voltage VCES 1200 V

Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 300 A

DC-collector current TC = 25 °C IC625 A

Periodischer Kollektor Spitzenstrom

repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 600 A

Gesamt-Verlustleistung

total power dissipation TC=25°C, Transistor Ptot 2,5 kW

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage VGES +/- 20V V

Dauergleichstrom

DC forward current IF300 A

Periodischer Spitzenstrom

repetitive peak forw. current tP = 1 ms IFRM 600 A

Grenzlastintegral der Diode

I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t19 kA2s

Isolations-Prüfspannung

insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Kollektor-Emitter Sättigungsspannung IC = 300A, VGE = 15V, Tvj = 25°C VCE sat - 2,1 2,6 V

collector-emitter saturation voltage IC = 300A, VGE = 15V, Tvj = 125°C - 2,4 2,9 V

Gate-Schwellenspannung

gate threshold voltage IC = 12mA, VCE = VGE, Tvj = 25°C VGE(th) 4,5 5,5 6,5 V

Gateladung

gate charge VGE = -15V...+15V QG- 3,2 - µC

Eingangskapazität

input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies -21-nF

Rückwirkungskapazität

reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - 1,4 - nF

Kollektor-Emitter Reststrom VCE = 1200V, VGE = 0V, Tvj = 25°C ICES - 8 360 µA

collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125°C - 800 - µA

Gate-Emitter Reststrom

gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 350 nA

prepared by: Mark Münzer date of publication: 07.02.2000

approved by: H. Hierholzer revision: 2

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM300GAR120DLC

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Einschaltverzögerungszeit (ind. Last) IC = 300A, VCE = 600V

turn on delay time (inductive load) VGE = ±15V, RG = 3,3Ω, Tvj = 25°C td,on - 0,05 - µs

VGE = ±15V, RG = 3,3Ω, Tvj = 125°C - 0,06 - µs

Anstiegszeit (induktive Last) IC = 300A, VCE = 600V

rise time (inductive load) VGE = ±15V, RG = 3,3Ω, Tvj = 25°C tr- 0,05 - µs

VGE = ±15V, RG = 3,3Ω, Tvj = 125°C - 0,07 - µs

Abschaltverzögerungszeit (ind. Last) IC = 300A, VCE = 600V

turn off delay time (inductive load) VGE = ±15V, RG = 3,3Ω, Tvj = 25°C td,off - 0,57 - µs

VGE = ±15V, RG = 3,3Ω, Tvj = 125°C - 0,57 - µs

Fallzeit (induktive Last) IC = 300A, VCE = 600V

fall time (inductive load) VGE = ±15V, RG = 3,3Ω, Tvj = 25°C tf- 0,04 - µs

VGE = ±15V, RG = 3,3Ω, Tvj = 125°C - 0,05 - µs

Einschaltverlustenergie pro Puls IC = 300A, VCE = 600V, VGE = 15V

turn-on energy loss per pulse RG = 3,3Ω, Tvj = 125°C, LS = 60nH Eon - 35 - mWs

Abschaltverlustenergie pro Puls IC = 300A, VCE = 600V, VGE = 15V

turn-off energy loss per pulse RG = 3,3Ω, Tvj = 125°C, LS = 60nH Eoff - 36 - mWs

Kurzschlußverhalten tP ≤ 10µsec, VGE ≤ 15V, RG = 3,3Ω

SC Data TVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt ISC - 1800 - A

Modulinduktivität

stray inductance module LsCE - 25 - nH

Modul Leitungswiderstand, Anschlüsse – Chip

module lead resistance, terminals – chip TC=25°C RCC‘+EE‘ - 0,20 - mΩ

Charakteristische Werte / Characteristic values

Diode / Diode min. typ. max.

Durchlaßspannung IF = 300A, VGE = 0V, Tvj = 25°C VF- 1,8 2,3 V

forward voltage IF = 300A, VGE = 0V, Tvj = 125°C - 1,7 2,2 V

Rückstromspitze IF = 300A, - diF/dt = 5400A/µsec

peak reverse recovery current VR = 600V, VGE = -15V, Tvj = 25°C IRM - 348 - A

VR = 600V, VGE = -15V, Tvj = 125°C - 420 - A

Sperrverzögerungsladung IF = 300A, - diF/dt = 5400A/µsec

recovered charge VR = 600V, VGE = -15V, Tvj = 25°C Qr- 28 - µAs

VR = 600V, VGE = -15V, Tvj = 125°C - 58 - µAs

Abschaltenergie pro Puls IF = 300A, - diF/dt = 5400A/µsec

reverse recovery energy VR = 600V, VGE = -15V, Tvj = 25°C Erec - 9 - mWs

VR = 600V, VGE = -15V, Tvj = 125°C - 21 - mWs

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM300GAR120DLC

Thermische Eigenschaften / Thermal properties min. typ. max.

Innerer Wärmewiderstand Transistor / transistor, DC RthJC - - 0,05 K/W

thermal resistance, junction to case Diode/Diode, DC - - 0,125 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink pro Modul / per module

λΠαστε = 1 W/m * K / λgrease = 1 W/m * K RthCK - 0,01 - K/W

Höchstzulässige Sperrschichttemperatur

maximum junction temperature Tvj - - 150 °C

Betriebstemperatur

operation temperature Top -40 - 125 °C

Lagertemperatur

storage temperature Tstg -40 - 150 °C

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage

case, see appendix

Innere Isolation

internal insulation AL2O3

Kriechstrecke

creepage distance 20 mm

Luftstrecke

clearance 11 mm

CTI

comperative tracking index 275

Anzugsdrehmoment f. mech. Befestigung M1 3 6 Nm

mounting torque

Anzugsdrehmoment f. elektr. Anschlüsse terminals M6 M2 2,5 5 Nm

terminal connection torque

Gewicht

weight G 420 g

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.

Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM300GAR120DLC

IC [A]

VCE [V]

IC [A]

VCE [V]

100

200

300

400

500

600

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0

Tj = 25°C

Tj = 125°C

Ausgangskennlinie (typisch) I

C = f (VCE)

Output characteristic (typical) VGE = 15V

100

200

300

400

500

600

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

VGE = 17V

VGE = 15V

VGE = 13V

VGE = 11V

VGE = 9V

VGE = 7V

Ausgangskennlinienfeld (typisch) I

C = f (VCE)

Output characteristic (typical)

Tvj = 125°C

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM300GAR120DLC

IC [A]

VGE [V]

IF [A]

VF [V]

100

200

300

400

500

600

56789101112

Tj = 25°C

Tj = 125°C

Übertragungscharakteristik (typisch) IC = f (VGE)

Transfer characteristic (typical) VCE = 20V

100

200

300

400

500

600

0,0 0,5 1,0 1,5 2,0 2,5 3,0

Tj = 25°C

Tj = 125°C

Durchlaßkennlinie der Inversdiode (typisch) I

F = f (VF)

Forward characteristic of inverse diode (typical)

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM300GAR120DLC

E [m J]

IC [A]

E [m J]

RG [Ω]

100

0 100 200 300 400 500 600

Eoff

Eon

Erec

Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)

Switching losses (typical) VGE=15V, Rgon = Rgoff =3,3 Ω, VCE = 600V, Tj = 125°C

100

120

140

160

246810121416182022

Eoff

Eon

Erec

Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)

Switching losses (typical) VGE=15V , IC = 300A , VCE = 600V , Tj = 125°C

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM300GAR120DLC

ZthJC

[K / W]

t [sec]

i 1234

ri [K/kW] : IGBT 22,27 16,95 10,76 0,02

τi [sec] : IGBT 0,006 0,029 0,043 1,014

ri [K/kW] : Diode 34,12 50,84 26,33 13,71

τi [sec] : Diode 0,006 0,035 0,033 0,997

IC [A]

VCE [V]

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA) VGE = 15V, Rg = 3,3 Ohm, T vj= 125°C

Transienter Wärmewiderstand ZthJC = f (t)

Transient thermal impedance

100

200

300

400

500

600

700

0 200 400 600 800 1000 1200 1400

IC,Modul

IC,Chip

0,001

0,01

0,1

0,001 0,01 0,1 1 10 100

Zth:Diode

Zth:IGBT

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM300GAR120DLC

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