ES3AB thru ES3JB
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Lo w reverse leakage cu rrent
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.003 ounces, 0.093 grams
SMB
All Dimen sio ns in mi llimete r
SMB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B 4.06 4.57
3.94 3.3 0
1.9 6 2.21
0.31 0.1 5
5.21 5.59
0.05 0.20
2.01 2.62
0.76 1.52
C
B
A
HEF
GD
NOTES : 1. Reverse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Therm al Resistance junction to Lead
4. Therm al Resistance junction to A mbient
SURFAC E MOUNT
SUPER FAST RECT IFIERS
REVERSE VOLTAGE -
50
to
400
Volts
FORWARD CURRENT -
3.0
Amperes
MAXIM UM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 3, 25-Mar-2002, KSGB02
Maximum Average Forward
Rectified Current
Peak Forwar d Surge Cur rent
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltag e
Maximum DC Blocking Voltage
Maximum forward Voltage at 3.0A DC
Maximum DC Reve rse Cu rrent
at Rated DC Blocking Voltage
3.0
100
0.92
Typ ical Thermal Resista nce (Note 3)
Typi c al Jun ction Capacitance (No t e 2)
UNIT
CHARACTERISTICS SYMBOL
@TL =110 C
ES3AB
Maximum Reverse Recovery Time (Note 1)
@TJ =25 C
@TJ=125 C
Typ ical Reverse Re covery Time
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
RR
T
RR
C
J
R
θ
JL
R
θ
JL
50
35
50
ES3BB
100
70
100
ES3CB
150
105
150
ES3DB
200
140
200
ES3GB
400
280
400
ES3JB
600
420
600
V
V
V
1.25 1.30
A
A
V
uA
ns
ns
pF
C/W
10
500
25
20
45
10
Operating Temp erature Range T
J
C
-55 to + 150
Storage Temperature Range T
STG
C
-55 to + 150
30
35
Typ ical Thermal Resista nce (Note 4) R
θ
JA
50
15
RATING AND CHARACT ERIST IC CURVES
ES3AB thru ES3JB
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25 75 100 125 150
2.0
050
1.0
175
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
3.0
1.5
0.5
2.5
LEAD TEMPERATURE , C
PE AK FO RWARD SURG E CU RREN T,
AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CUR RENT
NUMBER OF CYCLES AT 60Hz
1510 50 100
220
0
20
40
100
Pu l se Wid th 8 .3ms
Single Half-Sine-Wave
(JEDEC METHOD)
60
80
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT, (uA)
20 40 120 140
0
0.1
1.0
10
1000
100
60 80 100
TJ= 25 C
TJ= 125 C
INSTANTANEOUS FOR WARD VOLTAGE, (VOLT S)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWAR D CURRENT, (A)
0.2 0.4 1.2 1.4
0
0.1
1.0
10
0.6 0.8 1.0
.01 1.8
1.6
TJ= 25 C
PULSEWIDTH:300us
ES3AA - ES3DA
ES3GA
REV. 3, 25-Mar-2002, KSGB02
ES3JB
