@ 7929237 0045733 539 mm SctH ky SGS-THOMSON MICROELECTROMICS IRFP240 IRFP240FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vpss Rosvon) lb . IRFP240 200 V < 0.1892 20A IRFP240FI 200 V <0.182 12A a TYPICAL Rosgjion) = 0. 1452 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100C APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE'POWER SUPPLY (UPS) MOTOR CONTROL, AUDIO AMPLIFIERS INDUSTRIAL ACTUATORS DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT : TO-218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM D (2) G (1) 8 (3) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRFP240 IRFP240FI Vos Drain-source Voltage (Vas = 0) 200 Vv Voer |Drain- gate Voltage (Res = 20 kQ)} 200 Vv Vas Gate-source Voltage +20 Vv Ip Drain Current (cont.) at T. = 25 C 20 12 A lp {Drain Current (cont.) at Te = 100 C 12 7 A Ipm(e} |Drain Current (pulsed) 80 80 A Prot Total Dissipation at T, = 25 C 150 55 Ww Derating Factor 1.2 0.44 w/c Viso Insulation Withstand Voltage (DC) _ 4000 Vv Tstg |Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C () Pulse width limited by safe operating area July 1993 1/6 229IRFP240/F 1 Me 792923? 0045734 475 mB SGTH THERMAL DATA TO-218 ISOWATT218 Rithj-case [Thermal Resistance Junction-case Max 0.83 2.27 C/W Rinj-amb |Thermal Resistance Junction-ambient Max 30 C/W Rtne-s |Thermal Resistance Case-sink Typ 0.1 C/W T Maximum Lead Temperature For Soldering Purpose 300 c | AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit lan Avalanche Current, Repetitive or Not-Repetitive 20 A (pulse width limited by Tj max, 6 < 1%) Eas Single Pulse Avalanche Energy 50 mJ (starting Tj = 25 C, Ip = lan, Von = 25 V) Ear Repetitive Avalanche Energy 10 mJ (pulse width limited by T; max, 8 < 1%) lar Avalanche Current, Repetitive or Not-Repetitive 12 A (Te = 100 C, pulse width limited by Tj max, 8 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Visryoss_ |Drain-source Ip=250pA Vas=0 200 v Breakdown Voltage loss Zero Gate Voltage Vos = Max Rating 250 pA Drain Current (Ves = 0) |Vos = Max Rating x 0.8 Te = 125C 1000 HA lass Gate-body Leakage Vas=+20V + 100 nA Current (Vos = 0) ON (#} Symbol _ Parameter Test Conditions Min. | Typ. | Max. | Unit Vesitny |Gate Threshold Voltage |Vps= Ves lp= 250 LA 2 3 4 Vv Rps(on) |Static Drain-source On |Vas= 10V Ip=10A 0.145 | 0.18 Q Resistance Ipjen) [On State Drain Current | Vos > lojon) X Rostonjymax Vas = 10 V 20 A DYNAMIC Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit gts (*) | Forward Vos > Ipjon) X Rostonjmax lo = 10A 6.5 13 S$ Transconductance Ciss Input Capacitance Vos=25V f=1MHz Vaes=0 1600 | 2100 pF Coss Output Capacitance 270 350 pF Crss Reverse Transfer 50 70 pF Capacitance 2/6 7 SCS-THOMSON Tf jmenosiscrmomies 230mm 7929237 0045735 301 me SGTH IRFP240/F I ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit ta(on) Turn-on Time Voo=100V Ip=20A 25 35 ns tr Rise Time Re=9.1Q2 Ves=10V 85 120 ns tacott) Turn-off Delay Time (see test circuit) 65 90 ns tr Fall Time 60 85 ns Qg Total Gate Charge IDp=20A Vas=10V 57 80 nc Qgs Gate-Source Charge Vop = Max Rating x 0.8 11 nc Qoa Gate-Drain Charge (see test circuit) 26 nc SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Isp Source-drain Current 20 A Isom(*) |Source-drain Current 80 A (pulsed) Vsp (*) |Forward On Voltage Isp =20A Ves=0 1.5 Vv ter Reverse Recovery Isp = 20 A di/dt = 100 A/us 310 ns. Time Vop = 100 V Tj = 150 C Qr Reverse Recovery 3.4 yc Charge (+) Pulsed: Pulse duration = 300 us, duty cycle 1.5% (*) Pulse width limited by safe operating area Safe Operating Area for TO-218 Safe Operating Area for ISOWATT218 Ip(A) 2 2 107, & s 10s ~ 100us 21 aif 10", ims 4 10ms 2 D.C. OPERATION 100ms 10 0.C, OPERATION 6 a 2 -1 4 08 + 2 468 2 2 4 10 0 1 a 2 2 4 10 10 10 Vos (V) 10 10 10 Vps (V) 3/6 ka SGS-THOMSON T/ jmenosecrromes 231IRFP240/F I we 7929237 OO4S73b 248 MM SGTH Thermal Impedance for TO-218 107! 0.05 0.01 fol SINGLE PULSE + 107? 107 to7* 107% 107 107" tp (s) Derating Curve for TO-218 Pia (W) 120 80 40 0 50 100 Tease (C) Output Characteristics Ip(A) 50 40 30 20 Vv 25 Vps{) ky 0 5 10 15 20 416 232 SGS-THOMSON MICROBLECTROMICS Thermal Impedance for IGOWATT218 K 107" 0.05 0.02 0.01 Zum = k Rinse ton? {__SINGLE_PuLse O= tp/t thle T 10% jom* 1073 107 107' 10 t (s) Derating Curve for ISOWATT218 Prot (W) 60 30 40 30 20 0 50 100 Teggp (C) Transfer Characteristics Ip (A) 40 30 20 0 2 4 6 B Vos (V)me 7929237 Transconductance 9i5(S) Vo5=15V 16 Ty =-40 C 12 12 16 Maximum Drain Current vs Temperature Ip (A) 24 20 0 50 100 Capacitance Variations C(pF) 3000 2500 2000 1500 {000 S00 20 30 40 50 OO4S?37 184 mm SGTH IRFP240/Fl Static Drain-source On Resistance Rosia ) GC514790 (0 0.06 Ip(A) 0 5 10 15 Ip CA) Gate Charge vs Gate-source Voltage Ves (Vv) 12 10 Te (C) 0 10 20 30 40 50 Q,{nc) Normalized Breakdown Voltage vs Temperature Vv (norm) 1.2 4.1 0.9 Coss Coss Vos (V) iy 0.8 -390 9 50 100 T, (C) SGS-THOMSON 5/6 MICROELECTRONICS 233IRFP240/FI Normalized On Resistance vs Temperature GC52950 R OS(on) (norm) 2.0 Vos=10V Ip=10A 0.5 -50 0 50 100 Ty(C) Unclamped Inductive Load Test Circuit m 792923? 0045798 010 MM SGTH Source-drain Diode Forward Characteristics Vep() 0.9 0.8 0.7 0.6 0 5 10 15 20 25 tgpfa) Unclamped Inductive Waveforms Vp o 4 2200 | 3.3 oS BP lu F Vo = -_ 1 i) (3 Vier)pss Pw sC05970 Switching Time Test Circuit Gate Charge Test Circuit Yo , sh pee 1Ke 100nF Ry 2200 | 3.3 tT HF ue Yop To Yo at Dut. _ Rs 4 0.U.T. Ve L_| , $005990 6/6 &r SGS-THOMSON TF sacaca.scrromecs 234