4-251
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4426A
TC4427A
TC4428A
GENERAL DESCRIPTION
The TC4426A/4427A/4428A are improved versions of
the earlier TC426/427/428 family of buffer/drivers (with
which they are pin compatible). They will not latch up under
any conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise spiking (of
either polarity) occurs on the ground pin. They can accept,
without damage or logic upset, up to 500 mA of reverse
current (of either polarity) being forced back into their
outputs. All terminals are fully protected against up to 4 kV
of electrostatic discharge.
As MOSFET drivers, the TC4426A/4427A/4428A can
easily switch 1000 pF gate capacitances in under 30 ns, and
provide low enough impedances in both the ON and OFF
states to ensure the MOSFET's intended state will not be
affected, even by large transients.
2 mA
OUTPUT
INPUT
GND
EFFECTIVE INPUT
C = 12 pF
300 mV
INVERTING
OUTPUTS
NONINVERTING
OUTPUTS
V
DD
TC4426A/TC4427A/TC4428A
4.7V
NOTES: 1. TC4426A has 2 inverting drivers; TC4427A has 2 noninverting drivers.
2. TC4428A has one inverting and one noninverting driver.
3. Ground any unused driver input.
PIN CONFIGURATIONS
TC4426A
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
V
DD
NC = NO INTERNAL CONNECTION
TC4427A
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
TC4428A
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
2,4 7,5
INVERTING
2,4 7,5
NONINVERTING
VDD
2
4
DIFFERENTIAL
7
5
VDD
NOTE: SOIC pinout is identical to DIP.
FEATURES
■High Peak Output Current ............................... 1.5A
■Wide Operating Range ..........................4.5V to 18V
■High Capacitive Load
Drive Capability .................1000 pF in 25 nsec Typ
■Short Delay Time ................................. 30 nsec Typ
■Matched Rise, Fall and Delay Times
■Low Supply Current
— With Logic “1” Input ............................1 mA Typ
— With Logic “0” Input .........................100 µA Typ
■Low Output Impedance ................................7Ω Typ
■Latch-Up Protected: Will Withstand 0.5A
Reverse Current
■Input Will Withstand Negative Inputs Up to 5V
■ESD Protected....................................................4 kV
■Pinout Same as TC426/TC427/TC428
ORDERING INFORMATION
Part No. Package Temp. Range
TC4426ACOA 8-Pin SOIC 0°C to +70°C
TC4426ACPA 8-Pin Plastic DIP 0°C to +70°C
TC4426AEOA 8-Pin SOIC – 40°C to +85°C
TC4426AEPA 8-Pin Plastic DIP – 40°C to +85°C
TC4426AMJA 8-Pin CerDIP – 55°C to +125°C
TC4427ACOA 8-Pin SOIC 0°C to +70°C
TC4427ACPA 8-Pin Plastic DIP 0°C to +70°C
TC4427AEOA 8-Pin SOIC – 40°C to +85°C
TC4427AEPA 8-Pin Plastic DIP – 40°C to +85°C
TC4427AMJA 8-Pin CerDIP – 55°C to +125°C
TC4428ACOA 8-Pin SOIC 0°C to +70°C
TC4428ACPA 8-Pin Plastic DIP 0°C to +70°C
TC4428AEOA 8-Pin SOIC – 40°C to +85°C
TC4428AEPA 8-Pin Plastic DIP – 40°C to +85°C
TC4428AMJA 8-Pin CerDIP – 55°C to +125°C
TC4426A/7A/8A-9 10/21/96
FUNCTIONAL BLOCK DIAGRAM
4-252 TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426A
TC4427A
TC4428A
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B..
(VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature.................................+150°C
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C.................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C..................................................... 45°C/W
Operating Temperature Range
C Version...............................................0°C to +70°C
E Version ..........................................– 40°C to +85°C
M Version .......................................– 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
Plastic .............................................................730mW
CerDIP............................................................800mW
SOIC...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless
otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
VIH Logic 1 High Input Voltage 2.4 — — V
VIL Logic 0 Low Input Voltage — — 0.8 V
IIN Input Current – 0V ≤ VIN ≤ VDD TA = 25°C– 1—1µA
– 40°C ≤ TA ≤ 85°C – 10 — 10
Output
VOH High Output Voltage DC Test VDD – 0.025 — — V
VOL Low Output Voltage DC Test — — 0.025 V
ROOutput Resistance VDD = 18V, IO = 10mA TA = 25°C—79Ω
0°C ≤ TA ≤ 70°C—710
– 40° ≤ TA ≤ 85°C— 811
I
PK Peak Output Current VDD = 18V — 1.5 — A
IREV Latch-Up Protection Duty Cycle ≤ 2% VDD = 18V 0.5 — — A
Withstand Reverse Current t ≤ 300µsec
Switching Time (Note 1)
tRRise Time Figure 1 TA = 25°C — 25 35 nsec
0°C ≤ TA ≤ 70°C — 27 40
– 40°C ≤ TA ≤ 85°C — 29 40
tFFall Time Figure 1 TA = 25°C — 25 35 nsec
0°C ≤ TA ≤ 70°C — 27 40
– 40°C ≤ TA ≤ 85°C — 29 40
tD1 Delay Time Figure 1 TA = 25°C — 30 35 nsec
0°C ≤ TA ≤ 70°C — 33 40
– 40°C ≤ TA ≤ 85°C — 35 45
tD2 Delay Time Figure 1 TA = 25°C — 30 35 nsec
0°C ≤ TA ≤ 70°C — 33 40
– 40°C ≤ TA ≤ 85°C — 35 45
Power Supply
ISPower Supply Current VIN = 3V (Both Inputs) VDD = 18V — 1.0 2.0 mA
VIN = 0V (Both Inputs) — 0.1 0.2
NOTE: 1. Switching times are guaranteed by design.
4-253
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS TC4426A
TC4427A
TC4428A
Figure 1. Switching Time Test Circuit
+5V
INPUT
10%
90%
10%
90%
10%
90%
VDD
OUTPUT
tD1
0V
90%
10%
10% 10%
t
F
90%
+5V
INPUT
VDD
OUTPUT
0V
90%
OUTPUT
INPUT
0.1 µF
CL = 1000 pF
4.7 µF
VDD= 18V
Inverting Driver
3
27
6
Noninverting Driver
tFtD2 tR
tR
tD1 tD2
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10nsec
45
0V
0V
4-254 TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426A
TC4427A
TC4428A
TYPICAL CHARACTERISTICS
5.0 7.5 10.0 12.5 15.0 17.5
0
20
40
60
80
100
VDD (Volts)
tR (nsec)
CL= 470pF
CL= 100pF
CL= 1000pF
CL= 2200pF
CL= 1500pF
5.0 7.5 10.0 12.5 15.0 17.5
0
20
40
60
80
100
VDD (Volts)
tF (nsec)
CL= 470pF
CL= 100pF
CL= 1000pF
CL= 2200pF
CL= 1500pF
15
20
25
30
35
40
tD1
tD2
1234567
8
9
20
70
60
50
40
30
80
90
100
110
VDD (Volts)
Delay Time (nsec)
tD1
tD2
0510 15 20
50
45
40
35
30
25
20
55
60
VDD (Volts)
Delay Time (nsec)
Delay Time (nsec)
VDD (Volts) VDD (Volts)
tR
tD2
tFtD1
-100 -50 0 50 100 150 -100 -50 0 50 100 150
24
22
20
18
16
14
26
28
TEMPERATURE (°C) TEMPERATURE (°C)
Time (nsec)
0510 15 20
25
20
15
10
5
0
30
Rds(on)ohms
T
A
= 125°C
T
A
= 125°C
0510 15 20
25
20
15
10
5
0
30
Rds(on)ohms
T
A
= 125°C
T
A
= 125°C
Rise Time vs. Supply Voltage
Temperature = 25°C
Effect of Input Amplitude on Delay
V
DD
= 10V C
L
= 1000pF Propagation Delay Time vs. Supply Voltage
C
L
= 1000pF
Rise and Fall Times vs. Temperature
V
DD
= 18V C
L
= 1000pF
High-State Output Resistance Low State Output Resistance
Propagation Delay Time vs.Temperature
V
DD
= 18V C
L
= 1000pF
Fall Time vs. Supply Voltage
Temperature = 25°C
4-255
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS TC4426A
TC4427A
TC4428A
TYPICAL CHARACTERISTICS (Cont.)
0500 1000 1500 2000 2500
0
20
10
30
40
50
60
FREQUENCY (KHz)
FREQUENCY (KHz)
I Supply (mA)
I Supply (mA)
CL= 100pF
CL= 2200pF
CL= 1500pF
CL= 1000pF
CL= 100pF
CL= 2200pF
CL= 1500pF
CL= 1000pF
CL= 100pF
Both inputs = 1
Both inputs = 0
CL= 1000pF
CL= 2200pF
CL= 1500pF
0500 1000 1500 2000 2500
0500 1000 1500 2000 2500
70
60
50
40
30
20
10
0
80
VDD (Volts)
30
25
20
15
10
5
0
35
40
FREQUENCY (KHz)
I Supply (mA)
0510 15 20
800
700
600
500
400
200
100
0
300
900
I Quiescent (µA)
I Quiescent (µA)
Supply Current vs. Frequency
VDD = 18v
Supply Current vs. Frequency
VDD = 12v
Supply Current vs. Frequency
VDD = 6v
Quiescent Supply Current vs. Voltage
TEMPERATURE = 25°C
0500 1000 1500 2000 2500
0
20
10
30
40
50
60
CL (pF)
CL (pF)
I Supply (mA)
I Supply (mA)
2MHz 900MHz
600MHz
200MHz
20MHz
900MHz
600MHz
200MHz
2MHz
20MHz
900MHz
600MHz
200MHz
2MHz
20MHz
Supply Current vs. Capacitance Load
VDD = 18v
0500 1000 1500 2000 2500
70
60
50
40
30
20
10
0
80
Supply Current vs.Capacitance Load
VDD = 12v
0500 1000 1500 2000 2500
30
25
15
10
5
0
35
40
CL (pF)
I Supply (mA)
Supply Current vs. Capacitance Load
VDD = 6v
TEMPERATURE = (°C)
-100 -50 050 100 150
1000
900
800
700
600
400
300
200
100
0
500
1100
Quiescent Supply Current vs. Temperature
VDD = 18v
Both inputs = 0
Both inputs = 0
