BUZ111S-E3045 - Infineon Technologies

Data Sheet 1 05.99

SIPMOS Power Transistor

Product Summary

Drain source voltage 55

V

DS V

Drain-Source on-state resistance Ω

0.008

R

DS

(

on

)

I

D

Continuous drain current 80 A

Features

• N channel

• Enhancement mode

• Avalanche rated

• d

v

/d

t

rated

• 175˚C operating temperature

Pin 1 Pin 2 Pin 3

G D S

PackagingType Package Ordering Code

BUZ111S TubeP-TO220-3-1 Q67040-S4003-A2

BUZ111S E3045A Tape and ReelQ67040-S4003-A6P-TO263-3-2 TubeBUZ111S E3045 P-TO263-3-2 Q67040-S4003-A5

Maximum Ratings, at

T

j

= 25 ˚C, unless otherwise specified

Parameter Symbol UnitValue

Continuous drain current

T

C = 25 ˚C, 1)

T

C = 100 ˚C

80

I

DA

Pulsed drain current

T

C = 25 ˚C

I

Dpulse 320

Avalanche energy, single pulse

I

D = 80 A,

V

DD = 25 V,

R

GS = 25 ΩmJ

E

AS 700

Avalanche energy, periodic limited by

T

j

max 30

E

AR

Reverse diode d

v

/d

t

I

S = 80 A,

V

DS = 40 V, d

i

/d

t

= 200 A/µs,

T

jmax = 175 ˚C

d

v

/d

t

6 kV/µs

Gate source voltage

V

GS ±20 V

Power dissipation

T

C = 25 ˚C

P

tot 300 W

Operating and storage temperature

T

j

,

T

st

g

˚C-55... +175

55/175/56IEC climatic category; DIN IEC 68-1

BUZ 111S

Data Sheet 2 05.99

Thermal Characteristics

Parameter ValuesSymbol Unit

typ. max.min.

Characteristics

R

thJC - - 0.5 K/WThermal resistance, junction - case -Thermal resistance, junction - ambient, leded

R

thJA - 62

-

62

40

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area2)

R

thJA

Electrical Characteristics, at

T

j

= 25 ˚C, unless otherwise specified

Parameter Symbol UnitValues

min. max.typ.

Static Characteristics

Drain- source breakdown voltage

V

GS = 0 V,

I

D = 0.25 mA -

V

(BR)DSS 55 - V

Gate threshold voltage,

V

GS =

V

DS

I

D = 240 µA

V

GS(th) 432.1

Zero gate voltage drain current

V

DS = 50 V,

V

GS = 0 V,

T

j = 25 ˚C

V

DS = 50 V,

V

GS = 0 V,

T

j = 150 ˚C

-

I

DSS µA

1

100

0.1

-

Gate-source leakage current

V

GS = 20 V,

V

DS = 0 V

I

GSS - 10 nA100

Drain-Source on-state resistance

V

GS = 10 V,

I

D = 80 A

R

DS(on) - 0.0065 0.008 Ω

1current limited by bond wire

2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain

connection. PCB is vertical without blown air.

BUZ 111S

Data Sheet 3 05.99

Electrical Characteristics, at

T

j

= 25 ˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS≥2*

I

D*

R

DS(on)max ,

I

D = 80 A

g

fs 30 73 - S

Input capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

iss - 3600 4500 pF

Output capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

oss - 1100 1375

Reverse transfer capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

rss - 550 690

Turn-on delay time

V

DD = 30 V,

V

GS = 10 V,

I

D = 80 A,

R

G = 2.4 Ω

t

d(on) - 25 37 ns

Rise time

V

DD = 30 V,

V

GS = 10 V,

I

D = 80 A,

R

G = 2.4 Ω

t

r- 30 45

Turn-off delay time

V

DD = 30 V,

V

GS = 10 V,

I

D = 80 A,

R

G = 2.4 Ω

t

d(off) - 65 95

Fall time

V

DD = 30 V,

V

GS = 10 V,

I

D = 80 A,

R

G = 2.4 Ω

t

f- 40 60

BUZ 111S

Data Sheet 4 05.99

Electrical Characteristics, at

T

j

= 25 ˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Gate to source charge

V

DD = 40 V,

I

D = 80 A 27 nC18

Q

gs -

- 61

Q

gd

Gate to drain charge

V

DD = 40 V,

I

D = 80 A 91.5

Gate charge total

V

DD = 40 V,

I

D = 80 A,

V

GS = 0 to 10 V - 125 185

Q

g

Gate plateau voltage

V

DD = 40 V,

I

D = 80 A

V

(plateau) 5.45 - V-

Reverse Diode

Inverse diode continuous forward current

T

C = 25 ˚C

I

S- - 80 A

Inverse diode direct current,pulsed

T

C = 25 ˚C

I

SM - - 320

Inverse diode forward voltage

V

GS = 0 V,

I

F = 160 A

V

SD - 1.25 V1.8

Reverse recovery time

V

R = 30 V,

I

F=

I

S , d

i

F/d

t

= 100 A/µs

t

rr - 105 ns160

Reverse recovery charge

V

R = 30 V,

I

F=

l

S , d

i

F/d

t

= 100 A/µs

Q

rr - µC0.29 0.45

BUZ 111S

Data Sheet 5 05.99

Power Dissipation

P

tot =

f

(

T

C)

0 20 40 60 80 100 120 140 160˚C 190

T

C

0

40

80

120

160

200

240

W

320 BUZ111S

P

tot

Drain current

I

D =

f

(

T

C)

parameter:

V

GS ≥ 10 V

0 20 40 60 80 100 120 140 160˚C 190

T

C

0

10

20

30

40

50

60

70

A

90 BUZ111S

I

D

Transient thermal impedance

Z

thJC =

f

(

t

p)

parameter :

D

=

t

p/

T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

t

p

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

K/W

BUZ111S

Z

thJC

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50

Safe operating area

I

D =

f

(

V

DS)

parameter :

D

= 0 ,

T

C = 25 ˚C

10 -1 10 0 10 1 10 2

V

DS

0

10

1

10

2

10

3

10

A

BUZ111S

I

D

R

DS(on)

=

V

DS

/

I

D

DC 10 ms

1 ms

100 µs

t

p = 29.0µs

BUZ 111S

Data Sheet 6 05.99

Typ. output characteristics

I

D =

f

(

V

DS)

parameter:

t

p = 80 µs

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0

V

DS

0

20

40

60

80

100

120

140

160

A

190 BUZ111S

I

D

V

GS [V]

a

a 4.0

b

b 4.5

c

c 5.0

d

d 5.5

e

e 6.0

f

f 6.5

g

g 7.0

h

h 7.5

i

i 8.0

j

j 9.0

k

k 10.0

l

P

tot = 300W

l 20.0

Typ. drain-source-on-resistance

R

DS(on) =

f

(

I

D)

parameter:

V

GS

0 20 40 60 80 100 120 A150

I

D

0.000

0.002

0.004

0.006

0.008

0.010

0.012

0.014

0.016

0.018

0.020

0.022

Ω

0.026 BUZ111S

R

DS(on)

V

GS [V] =

b

4.5

c

5.0

d

5.5

e

6.0

f

6.5

g

7.0

h

7.5

i

8.0

j

9.0

k

10.0

l

20.0

Typ. transfer characteristics

I

D=

f

(

V

GS)

parameter:

t

p = 80 µs

V

DS ≥ 2 x

I

D x

R

DS(on) max

01234V6

V

GS

0

10

20

30

40

50

60

A

80

I

D

Typ. forward transconductance

g

fs

= f

(

I

D)

;

T

j = 25˚C

parameter:

g

fs

0 10 20 30 40 50 A65

I

D

0

5

10

15

20

25

30

35

40

45

50

55

60

S

75

g

fs

BUZ 111S

Data Sheet 7 05.99

Drain-source on-resistance

R

DS(on) =

f

(

T

j)

parameter :

I

D = 80 A,

V

GS = 10 V

-60 -20 20 60 100 140 ˚C 200

T

j

0.000

0.002

0.004

0.006

0.008

0.010

0.012

0.014

0.016

0.018

0.020

0.022

0.024

Ω

0.028 BUZ111S

R

DS(on)

typ

98%

Gate threshold voltage

V

GS(th) =

f

(

T

j)

parameter :

V

GS =

V

DS,

I

D = 240 µA

-60 -20 20 60 100 140 ˚C 200

T

j

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

4.4

V

5.0

V

GS(th)

min

typ

max

Typ. capacitances

C =

f

(VDS)

parameter:

V

GS = 0 V,

f

= 1 MHz

0 10 20 V40

V

DS

2

10

3

10

4

10

pF

C

Ciss

Coss

Crss

Forward characteristics of reverse diode

I

F =

f

(

V

SD)

parameter:

T

j ,

t

p = 80 µs

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0

V

SD

0

10

1

10

2

10

3

10

A

BUZ111S

I

F

T

j = 25 ˚C typ

T

j = 25 ˚C (98%)

T

j = 175 ˚C typ

T

j = 175 ˚C (98%)

BUZ 111S

Data Sheet 8 05.99

Typ. gate charge

V

GS =

f

(

Q

Gate)

parameter:

I

D puls = 80 A

0 20 40 60 80 100 120 140 nC 180

Q

Gate

0

2

4

6

8

10

12

V

16 BUZ111S

V

GS

DS max

V

0,8

DS max

V

0,2

Avalanche Energy

E

AS =

f

(

T

j)

parameter:

I

D = 80 A,

V

DD = 25 V

R

GS = 25 Ω

20 40 60 80 100 120 140 ˚C 180

T

j

0

150

300

450

mJ

750

E

AS

Drain-source breakdown voltage

V

(BR)DSS =

f

(

T

j)

-60 -20 20 60 100 140 ˚C 200

T

j

50

52

54

56

58

60

62

64

V

66 BUZ111S

V

(BR)DSS