LL4150
www.vishay.com Vishay Semiconductors
Rev. 2.0, 14-Jul-17 1Document Number: 85558
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
DESIGN SUPPORT TOOLS click logo to get started
MECHANICAL DATA
Case: MiniMELF (SOD-80)
Weight: approx. 31 mg
Cathode band color: black
Packaging codes / options:
GS08/2.5K per 7" reel (8 mm tape),12.5K/box
GS18/10K per 13" reel (8 mm tape),10K/box
FEATURES
• Silicon epitaxial planar diodes
• Low forward voltage drop
• High forward current capability
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• High speed switch and general purpose use in computer
and industrial applications
Available
Models
PARTS TABLE
PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS
LL4150 LL4150GS08 or LL4150GS18 - Single Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 50 V
Reverse voltage VR50 V
Peak forward surge current tp = 1 μs IFSM 4A
Forward continuous current IF600 mA
Average forward current VR = 0 IF(AV) 300 mA
Power dissipation Ptot 500 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air On PC board
50 mm x 50 mm x 1.6 mm RthJA 300 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg -65 to +175 °C
Operating temperature range Top -55 to +175 °C
LL4150
www.vishay.com Vishay Semiconductors
Rev. 2.0, 14-Jul-17 2Document Number: 85558
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF (SOD-80)
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 1 mA VF0.540 0.620 V
IF = 10 mA VF0.660 0.740 V
IF = 50 mA VF0.760 0.860 V
IF = 100 mA VF0.820 0.920 V
IF = 200 mA VF0.870 1 V
Reverse current VR = 50 V IR100 nA
VR = 50 V, Tj = 150 °C IR100 μA
Diode capacitance VR = 0, f = 1 MHz,
VHF = 50 mV CD2.5 pF
Reverse recovery time IF = IR = 10 mA to 100 mA,
iR = 0.1 x IR, RL = 100 Ωtrr 4ns
0 40 80 120 160 200
0.01
0.1
1
10
100
I - Reverse Current (µA)
R
TJ - Junction Temperature (°C)
94 9100
Scattering Limit
VR= 50 V
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
V
F
- Forward Voltage (V)
2.0
94 9162
Scattering Limit
TJ = 25 °C
Cathode indentification
0.47 (0.019) max.
2.5 (0.098) max. 1.25 (0.49) min.
3.7 (0.146)
3.3 (0.130)
5 (0.197) ref.
2 (0.079) min.
1.6 (0.063)
1.4 (0.055)
Foot print recommendation:
*
* The gap between plug and glass can
be either on cathode or anode side
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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