AUIRF1404S/L
2 2015-11-11
Notes:
Repetitive rating; pulse width limit ed by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 0.12mH, RG = 25, IAS = 95A, VGS =10V. (See fig. 12)
ISD 95A, di/dt 150A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
C
oss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Use IRF1404 data and test conditions.
This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
R is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.5 4.0 m VGS = 10V, ID = 95A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 106 ––– ––– S VDS = 25V, ID = 60A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 40 V, VGS = 0V
––– ––– 250 VDS = 32V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Dynamic Electrical Characte ristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 160 200 nC
ID = 95A
Qgs Gate-to-Source Charge ––– 35 ––– VDS = 32V
Qgd Gate-to-Drain Charge ––– 42 60 VGS = 10V
td(on) Turn-On Delay Time ––– 17 –––
ns
VDD = 20V
tr Rise Time ––– 140 ––– ID = 95A
td(off) Turn-Off Delay Time ––– 72 ––– RG= 2.5
tf Fall Time ––– 26 ––– RD= 0.21
LS Internal Source Inductance ––– 7.5 ––– nH Between lead,
and center of die contact
Ciss Input Capacitance ––– 7360 –––
pF
VGS = 0V
Coss Output Capacitance ––– 1680 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 6630 ––– VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
Coss Output Capacitance ––– 1490 ––– VGS = 0V, VDS = 32V ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 1540 ––– VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 162 A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 650 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 95A,VGS = 0V
trr Reverse Re covery Time ––– 71 110 ns TJ = 25°C ,IF = 95A
Qrr Reverse Recovery Charge ––– 180 270 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn -on is dominated by LS+LD)