BSS 138
Data Sheet 2 05.99
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
T
j -55 ... + 150 ˚C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip to ambient air
R
thJA
≤
350 K/W
Therminal resistance, chip-substrate- reverse side 1)
R
thJSR
≤
285
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA,
T
j = 25 ˚C
V
(BR)DSS 50 - -
V
Gate threshold voltage
V
GS=
V
DS,
I
D = 1 mA
V
GS(th) 0.8 1.2 1.6
Zero gate voltage drain current
V
DS = 50 V,
V
GS = 0 V,
T
j = 25 ˚C
V
DS = 50 V,
V
GS = 0 V,
T
j = 125 ˚C
V
DS = 30 V,
V
GS = 0 V,
T
j = 25 ˚C
I
DSS
-
-
-
-
-
0.05
100
5
0.5 µA
nA
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS - 10 100
nA
Drain-Source on-state resistance
V
GS = 10 V,
I
D = 0.22 A
V
GS = 4.5 V,
I
D = 0.22 A
R
DS(on)
-
-
2.8
1.8
6
3.5
Ω