BSS 138 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * VGS(th) = 0.8...2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 138 50 V 0.22 A 3.5 SOT-23 SSs Type BSS 138 BSS 138 Ordering Code Q67000-S566 Q67000-S216 D Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Symbol Drain source voltage VDS Drain-gate voltage V 50 Unit V DGR RGS = 20 k 50 Gate source voltage VGS ESD Sensitivity (HBM) as per MIL-STD 883 20 Class 1 Continuous drain current A ID TA = 31 C 0.22 DC drain current, pulsed IDpuls TA = 25 C 0.88 Power dissipation W Ptot TA = 25 C Data Sheet Values 0.36 1 05.99 BSS 138 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA 350 Therminal resistance, chip-substrate- reverse side 1) RthJSR 285 DIN humidity category, DIN 40 040 C K/W E IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium Unit 55 / 150 / 56 15 mm x 16.7 mm x 0.7 mm Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C 50 - - 0.8 1.2 1.6 VDS = 50 V, VGS = 0 V, Tj = 25 C - 0.05 0.5 VDS = 50 V, VGS = 0 V, Tj = 125 C - - 5 VDS = 30 V, VGS = 0 V, Tj = 25 C - - 100 Gate threshold voltage V GS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS Drain-Source on-state resistance - 10 100 RDS(on) VGS = 10 V, ID = 0.22 A - 1.8 3.5 VGS = 4.5 V, ID = 0.22 A - 2.8 6 Data Sheet 2 nA nA IGSS VGS = 20 V, VDS = 0 V A 05.99 BSS 138 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS 2 * ID * RDS(on)max, ID = 0.22 A Input capacitance 0.12 - 40 55 - 15 25 - 5 8 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 0.2 ns td(on) VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Rise time - 5 8 - 6 9 - 12 16 - 15 20 tr VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Data Sheet 3 05.99 BSS 138 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TA = 25 C Inverse diode direct current,pulsed 0.22 - - 0.88 V V SD VGS = 0 V, IF = 0.44 A, Tj = 25 C Data Sheet - ISM TA = 25 C Inverse diode forward voltage - - 4 0.9 1.4 05.99 BSS 138 Drain current ID = (TA) parameter: VGS 10 V Power dissipation Ptot = (TA) Ptot 0.40 0.24 W A 0.20 0.32 ID 0.18 0.28 0.16 0.24 0.14 0.20 0.12 0.16 0.10 0.08 0.12 0.06 0.08 0.04 0.04 0.02 0.00 0 0.00 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 TA C 160 TA Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = (Tj) parameter : D = 0.01, TC=25C 60 V 58 V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 C 160 Tj Data Sheet 5 05.99 BSS 138 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 0.50 j ih g A ID 11 Ptot = l0W k a b f VGS [V] a 2.0 0.40 e b 2.5 c 3.0 d 3.5 e 4.0 d f 4.5 g 5.0 h 6.0 i 7.0 j 8.0 k 9.0 l 10.0 0.35 0.30 0.25 0.20 c 0.15 RDS (on) c d e 9 8 7 6 5 4 f 3 0.10 g h i l jk 2 b 0.05 VGS [V] = a 1 0.00 a 2.0 b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 6.0 7.0 j 8.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 VDS A 0.45 ID Typ. transfer characteristics ID = f(V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s parameter: tp = 80 s, ID k l 9.0 10.0 0.65 0.30 A S 0.55 0.26 gfs 0.50 0.24 0.22 0.45 0.20 0.40 0.18 0.35 0.16 0.30 0.14 0.25 0.12 0.10 0.20 0.08 0.15 0.06 0.10 0.04 0.05 0.02 0.00 0.00 0 1 2 3 4 5 6 7 8 V 10 0.00 VGS Data Sheet 0.10 0.20 0.30 0.40 A 0.55 ID 6 05.99 BSS 138 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.22 A, VGS = 10 V Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA 9 2.6 V 2.2 RDS (on) VGS(th) 7 2.0 1.8 6 98% 1.6 5 1.4 98% typ 1.2 4 1.0 3 2% 0.8 typ 0.6 2 0.4 1 0.2 0 0.0 -60 -20 20 60 100 C 160 -60 -20 20 60 100 C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 10 0 pF A IF C 10 2 10 -1 Ciss Coss 10 1 10 -2 Tj = 25 C typ Tj = 150 C typ Crss Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 15 20 25 30 V 10 -3 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99