Data Sheet
V2.1 2011-07
Microcontrollers
16-Bit
Architecture
XE164FM, XE164GM,
XE164HM, XE164KM
16-Bit Single-Chip
Real Time Signal Controller
XE166 Family / Base Line
Edition 2011-07
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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characteristics. With respect to any examples or hints given herein , any typical values stated herein and/or any
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and liabilities of any kind, including without limit ation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
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Data Sheet
V2.1 2011-07
Microcontrollers
16-Bit
Architecture
XE164FM, XE164GM,
XE164HM, XE164KM
16-Bit Single-Chip
Real Time Signal Controller
XE166 Family / Base Line
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Data Sheet V2.1, 2011-07
Trademarks
C166, TriCore, and DAVE are trademarks of Infineon Technologies AG.
XE164xM
Revision History: V2.1, 2011-07
Previous Version(s):
V2.0, 2009-03
V1.3, 2008-11
V1.2, 2008-09
V1.1, 2008-06 Preliminary
V1.0, 2008-06 (Intermediate version)
Page Subjects (major changes since last revisions)
39 ID registers added
86 ADC capacitances corrected (typ. vs. max.)
90 Conditions relaxe d for ΔfINT
Range for fWU adapted according to PCN 2010-013-A
Added startup time from power-on tSPO
127 Quality declarations added
We Listen to Your Comments
Is there any information in this document that you feel is wrong, unclear or missing?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (includin g a reference to this document) to:
mcdocu.comments@infineon.com
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Table of Contents
Data Sheet 5 V2.1, 2011-07
1 Summary of Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.1 Basic Device Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
1.2 Definition of Feature Variants . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2 General Device Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.1 Pin Configuration and Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.2 Identification Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3.1 Memory Subsystem and Organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.2 External Bus Controller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
3.3 Central Processing Unit (CPU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
3.4 Memory Protection Unit (MPU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3.5 Memory Checker Module (MCHK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3.6 Interrupt System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
3.7 On-Chip Debug Support (OCDS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
3.8 Capture/Compare Unit (CAPCOM2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
3.9 Capture/Compare Units CCU6x . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
3.10 General Purpose Timer (GPT12E) Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
3.11 Real Time Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
3.12 A/D Converters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
3.13 Universal Serial Interface Channel Modules (USIC) . . . . . . . . . . . . . . . . . 62
3.14 MultiCAN Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
3.15 System Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
3.16 Watchdog Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
3.17 Clock Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
3.18 Parallel Ports . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
3.19 Instruction Set Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
4 Electrical Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
4.1 General Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
4.1.1 Absolut Maximum Rating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
4.1.2 Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
4.1.3 Pad Timing Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
4.1.4 Parameter Interpretation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
4.2 DC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
4.2.1 DC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
4.2.2 DC Parameters for Lower Voltage Area . . . . . . . . . . . . . . . . . . . . . . . . 79
4.2.3 Power Consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
4.3 Analog/Digital Converter Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
4.4 System Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
4.5 Flash Memory Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table of Contents
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Table of Contents
Data Sheet 6 V2.1, 2011-07
4.6 AC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
4.6.1 Testing Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
4.6.2 Definition of Internal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
4.6.2.1 Phase Locked Loop (PLL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
4.6.2.2 Wakeup Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
4.6.2.3 Selecting and Changing the Operating Frequency . . . . . . . . . . . . . 100
4.6.3 External Clock Input Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
4.6.4 Pad Properties . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
4.6.5 External Bus Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
4.6.5.1 Bus Cycle Control with the READY Input . . . . . . . . . . . . . . . . . . . . 112
4.6.6 Synchronous Serial Interface Timing . . . . . . . . . . . . . . . . . . . . . . . . . . 114
4.6.7 Debug Interface Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
5 Package and Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
5.1 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
5.2 Thermal Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
5.3 Quality Declarations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Summary of Features
Data Sheet 7 V2.1, 2011-07
16-Bit Single-Chip
Real Time Signal Controller
XE164xM (XE166 Family)
1 Summary of Features
For a quick overview and easy reference, the features of the XE164xM are summarized
here.
High-performance CPU with five-stage pipeline and MPU
12.5 ns instruction cycle at 80 MHz CPU clock (single-cycle execution)
One-cycle 32-bit addition and subtraction with 40-bit result
One-cycle multiplication (16 × 16 bit)
Background division (32 / 16 bit) in 21 cycles
One-cycle multiply-and-accumulate (MAC) instructions
Enhanced Boolean bi t manipulation facilities
Zero-cycle jump execution
Additional instructions to support HLL and operating systems
Register-based design with multiple variable register banks
Fast context switching support with two additional local register banks
16 Mbytes total linear address space for cod e and data
1024 Bytes on-chip special function register area (C166 Family compatible)
Integrated Memory Protection Unit (MPU)
Interrupt system with 16 priority levels for up to 96 sources
Selectable external inputs for interrupt generation and wake-up
Fastest sample-rate 12.5 ns
Eight-channel interrupt-driven single-cycle data transfer with
Peripheral Event Controller (PEC), 24-bit pointers cover total address space
Clock generation from internal or external clock sources,
using on-ch i p PL L or p rescaler
Hardware CRC-Checker with Programmable Polynomial to Supervise On-Chip
Memory Areas
On-chip memory modules
8 Kbytes on-chip stand-by RAM (SBRAM)
2 Kbytes on-chip dual-port RAM (DPRAM)
Up to 16 Kbytes on-chip data SRAM (DSRAM)
Up to 32 Kbytes on-chip program/data SRAM (PSRAM)
Up to 576 Kbytes on-chip pr ogram memory (Flash memory)
Memory content protection through Error Correction Code (ECC)
On-Chip Peripheral Modules
Multi-functional general purpose timer unit with 5 timers
16-channel general purpose capture/compare unit (CAPCOM2)
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Summary of Features
Data Sheet 8 V2.1, 2011-07
Up to 3 capture/compare units for flexible PWM signa l generation (CCU6x)
Two Synchronizable A/D Converters with a total of up to 16 channels, 10-bit
resolution, conversion time below 1 μs, optional data preprocessing (data
reduction, range check), broke n wire detection
Up to 6 serial interface channels to be used as UART, LIN, high-speed
synchronous channel (SPI), IIC bus interface (10-bit addressing, 400 kbit/s), IIS
interface
On-chip MultiCAN interface (Rev. 2.0B active) with up to 128 message objects
(Full CAN/Basic CAN) on up to 4 CAN nodes and gatew ay functionality
On-chip system timer and on-chi p real time clock
Up to 12 Mbytes external address space for code and data
Programmable external bus characteristics for different address range s
Multipl exed or demultipl e xe d external addr ess/ d at a bu se s
Selectable address bus width
16-bit or 8-bit data bus width
Four programmable chip-select sign als
Single power supply from 3.0 V to 5.5 V
Programmable watchdog timer and oscillator watchdog
Up to 76 general purpose I/O lines
On-chip bootstrap loaders
Supported by a full range of development tools including C compilers, macro-
assembler packages, emulators, evaluation boards, HLL debuggers, simulators,
logic analyzer disassemblers, programming boards
On-chip debug support via Device Access Port (DAP) or JTAG interface
100-pin Green LQFP package, 0.5 mm (19.7 mil) pitch
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Summary of Features
Data Sheet 9 V2.1, 2011-07
Ordering Information
The ordering code for an Infineon microcontroller provides an exact reference to a
specific product. This ordering co de identifies:
the function set of the corresponding product type
the temperature range:
SAF-…: -40°C to 85°C
SAK-…: -40°C to 125°C
the package and the type of delivery.
For ordering codes for the XE164xM please contact your sales representative or local
distributor.
This document describes se veral derivatives of the XE164xM group:
Table 1 lists these derivatives and summarizes the differences.
As this document refers to all of these derivatives, some descriptions may not apply to a
specific product, in particular to the special device types.
For simplicity the term XE164xM is used for all derivatives throughout this document.
XE164xM device types are available and can be ordered through Infineon’s direct and/or
distribution channels.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Summary of Features
Data Sheet 10 V2.1, 2011-07
1.1 Basic Device Types
Basic device types are available and can be ordered through Infineon’s direct and/or
distribution channels.
Table 1 Synopsis of XE164xM Basic Device Types
Derivative1)
1) xx is a placeholder for the available speed grade (in MHz).
Flash
Memory2)
2) Specific information about the on-chip Flash memory in Table 2.
PSRAM
DSRAM3)
3) All derivatives additionally provide 8 Kbytes SBRAM and 2 Kbytes DPRAM.
Capt./Comp.
Modules ADC4)
Chan.
4) Specific information about the ava ilable channels in Table 4.
Analog input channels are listed for each Analog/Digital Converter module separately (ADC0 + ADC1).
Interfaces4)
XE164FM-
72FxxL 576 Kbytes 32 Kbytes
16 Kbytes CC2
CCU60/1/2 11 + 5 4 CAN Nodes,
6 Serial Chan.
XE164FM-
48FxxL 384 Kbytes 16 Kbytes
16 Kbytes CC2
CCU60/1/2 11 + 5 4 CAN Nodes,
6 Serial Chan.
XE164FM-
24FxxL 192 Kbytes 8 Kbytes
16 Kbytes CC2
CCU60/1/2 11 + 5 4 CAN Nodes,
6 Serial Chan.
XE164GM-
72FxxL 576 Kbytes 32 Kbytes
16 Kbytes CC2
CCU60/1 6 + 5 2 CAN Nodes,
4 Serial Chan.
XE164GM-
48FxxL 384 Kbytes 16 Kbytes
16 Kbytes CC2
CCU60/1 6 + 5 2 CAN Nodes,
4 Serial Chan.
XE164GM-
24FxxL 192 Kbytes 8 Kbytes
16 Kbytes CC2
CCU60/1 6 + 5 2 CAN Nodes,
4 Serial Chan.
XE164HM-
72FxxL 576 Kbytes 32 Kbytes
16 Kbytes CC2
CCU60/1/2 11 + 5 No CAN Nodes,
6 Serial Chan.
XE164HM-
48FxxL 384 Kbytes 16 Kbytes
16 Kbytes CC2
CCU60/1/2 11 + 5 No CAN Nodes,
6 Serial Chan.
XE164HM-
24FxxL 192 Kbytes 8 Kbytes
16 Kbytes CC2
CCU60/1/2 11 + 5 No CAN Nodes,
6 Serial Chan.
XE164KM-
72FxxL 576 Kbytes 32 Kbytes
16 Kbytes CC2
CCU60/1 6 + 5 No CAN Nodes,
6 Serial Chan.
XE164KM-
48FxxL 384 Kbytes 16 Kbytes
16 Kbytes CC2
CCU60/1 6 + 5 No CAN Nodes,
6 Serial Chan.
XE164KM-
24FxxL 192 Kbytes 8 Kbytes
16 Kbytes CC2
CCU60/1 6 + 5 No CAN Nodes,
6 Serial Chan.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Summary of Features
Data Sheet 11 V2.1, 2011-07
1.2 Definition of Feature Variants
The XE164xM type s are offered with several Flash memory sizes. Table 2 descri bes the
location of the available memory areas for each Flas h memory size.
The XE164xM types are offered with different interface options. Table 4 lists the
available channels for each option.
Table 2 Flash Memory Allo cation
Total Flash Size Flash Area A1)
1) The uppermost 4-Kbyte sector of the first Flash segment is reserved for internal use (C0’F000H to C0’FFFFH).
Flash Area B Flash Area C
576 Kbytes C0’0000H
C0’EFFFH
C1’0000H
C7’FFFFH
CC’0000H
CC’FFFFH
384 Kbytes C0’0000H
C0’EFFFH
C1’0000H
C4’FFFFH
CC’0000H
CC’FFFFH
192 Kbytes C0’0000H
C0’EFFFH
C1’0000H
C1’FFFFH
CC’0000H
CC’FFFFH
Table 3 Flash Memory Module All ocation (in Kbytes)
Total Flash Size Flash 01)
1) The uppermost 4-Kbyte sector of the first Flash segment is reserved for internal use (C0’F000H to C0’FFFFH).
Flash 1Flash 2Flash 3
576 Kbytes 256 256 --- 64
384 Kbytes 256 64 --- 64
192 Kbytes 128 --- --- 64
Table 4 Interface Channel Association
Total Number Available Channels
11 ADC0 channels CH0, CH2 CH5, CH8 CH11, CH13, CH15
6 ADC0 channels CH0, CH2 CH5, CH8
5 ADC1 channels CH0, CH2, CH4, CH5, CH6 (overlay: CH8 CH11)
4 CAN nodes CAN0, CAN1, CAN2, CAN3
128 message objects
2 CAN nodes CAN0, CAN1
128 message objects
6 serial channels U0C0, U0C1, U1C0, U1C1, U2C0, U2C1
4 serial channels U0C0, U0C1, U1C0, U1C1
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Summary of Features
Data Sheet 12 V2.1, 2011-07
The XE164xM types are offered with several SRAM memory sizes. Figure 1 shows the
allocation rules for PSRAM and DSRAM. Note that the rules differ:
PSRAM allocation starts from the lower address
DSRAM allocation starts from the higher address
For example 8 Kbytes of PSRAM will be allocated at E0’0000h-E0’1 FFFh and 8 Kbytes
of DSRAM will be at 00’C000h-00’DFFFh.
Figure 1 SRAM Allocation
MC_XC_SRAM_ALLOCATION
Available
PSRAM
Reserved for
PSRAM
E0'0000h
(E8'0000h)
Available
DSRAM
Reserved for
DSRAM
E7'FFFFh
(EF'FFFFh)
00'8000h
00'DFFFh
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 13 V2.1, 2011-07
2 General Device Information
The XE164xM series (16-Bit Single-Chip
Real Time Signal Controller) is a part of the Infineon XE166 Family of full-feature single-
chip CMOS microcontrollers. These devices extend the functionality and performance of
the C166 Family in terms of instructions (MAC unit), peripherals, and speed. They
combine high CPU performance (up to 80 million instructions per second) with extended
peripheral functionality and enhanced IO capabilities. Optimized peripherals can be
adapted flexibly to meet the application requirements. These derivatives utilize clock
generation via PLL and internal or external clock sources. On-chip memory modules
include program Flash, program RAM, and data RAM.
Figure 2 XE164xM Logic Symbol
MC_XY_LOGSYMB100
Port 0
8 bit
Port 1
8 bit
Port 2
11 bit
Port 6
2 bit
Port 7
1 bit
VAGND
(1)
VAREF
(1)
VDDP
(9)
VSS
(4)
VDDI1
(3)
XTAL1
XTAL2
ESR0
Port 10
16 bit
Port 15
2 bit
Port 5
7 bit
v ia P or t P ins
DAP/JTAG
2 / 4 bit
TRST Debug
2 bit
TESTM
PORST
VDDIM
(1)
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 14 V2.1, 2011-07
2.1 Pin Configuration and Definit ion
The pins of the XE164xM are described in detail in Table 5, which includes all alternate
functions. For further explanat ions please refer to the footnotes at the end of the table.
The following figure summarizes all pins, showing their locations on the four sides of the
package.
Figure 3 XE164xM Pin Configuration (top view)
MC_XY_PIN100
V
DDPB
25
P5.3 24
P5.2 23
P5.0 22
V
AGND
21
20
19
P15.5 18
V
DDPA
17
16
P15.0 15
P15.4
14
P6.2 13
P6.1 12
P6.0 11
V
DDIM
10
9
8
P7.3 7
6
5
P7.2 4
TESTM 3
V
DDPB
2
V
SS
1
P7.0
TRST
V
AREF
P15.6
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
V
DDPB
ESR0
ESR1
PORST
XTAL1
XTAL2
P1.7
P1.6
P1.5
P10.15
P1.4
P10.14
V
DDI1
P1.3
P10.13
P10.12
P1.2
P10.11
P10.10
P1.1
P10.9
P10.8
P1.0
V
DDPB
V
SS
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45P2.4 46
47
48
49
50
V
SS
V
DD PB
P5.8
P5.9
P5.10
P5.11
P5.13
P5.15
P2.12
P2.11
V
DDI1
P2.0
P2.1
P2.2
P4.0
P2.3
P4.1
P2.5
P4.2
P2.6
P4.3
V
DD PB
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51 V
SS
V
DDPB
P0.0
P2.7
P0.1
P2.8
P2.9
P0.2
P10.0
P10.1
P10.2
P0.4
V
DDI1
P2.13
P2.10
P10.3
P0.5
P10.4
P10.5
P0.6
P10.6
P10.7
P0.7
V
DDPB
LQFP-100
P7.4
P7.1
P15.2 P0.3
P5.4
P5.5
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 15 V2.1, 2011-07
Key to Pin Definitions
Ctrl.: The output signal for a port pin is selected by bit field PC in the associated
register Px_IOCRy. Output O0 is selected by setting the respective bit field PC to
1x00B, output O1 is selected by 1x01B, etc.
Output signal OH is controlled by hardware.
Type: Indicates the pad type and its power supply domain (A, B, M, 1).
St: Standard pad
Sp: Special pad e.g. XTALx
DP: Double pad - can be used as standard or high speed pad
In: Input only pad
PS: Power supply pad
Table 5 Pin Definitions and Functio ns
Pin Symbol Ctrl. Type Function
3 TESTM IIn/BTestmode Enable
Enables factory test modes, must be held HIGH for
normal operation (connect to VDDPB).
An internal pull-up de vice will hold this pin high
when nothing is driving it.
4 P7.2 O0 / I S t/B Bit 2 of Port 7, General Purpose Input/Output
EMUX0 O1 St/B External Analog MUX Control Output 0 (ADC1)
CCU62_CCP
OS0A ISt/BCCU62 Position Input 0
TDI_C IH St/B JTAG Test Data Input
If JTAG pos. C is selected during start-up, an
internal pull-up device will hold this pin high when
nothing is driving it.
5TRST IIn/BTest-System Reset Input
For normal system operation, pin TRST should be
held low. A high level at this pin at the rising edge
of PORST activates the XE164xM’s debug
system. In this case, pin TRST must be driven low
once to reset the debug system.
An internal pull-down device will hold this pin low
when nothing is driving it.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 16 V2.1, 2011-07
6 P7.0 O0 / I S t/B Bit 0 of Port 7, General Purpose Input/Output
T3OUT O1 St/B GPT12E Timer T3 Toggle Latch Outpu t
T6OUT O2 St/B GPT12E Timer T6 Toggle Latch Outpu t
TDO_A OH /
IH St/B JTAG Test Data Output / DAP1 Input/Output
If DAP pos. 0 or 2 is selected during start-up, an
internal pull-down device will hold this pin low
when nothing is driving it.
ESR2_1 I St/B ESR2 Trigger Input 1
7 P7.3 O0 / I S t/B Bit 3 of Port 7, General Purpose Input/Output
EMUX1 O1 St/B External Analog MUX Control Output 1 (ADC1)
U0C1_DOUT O2 St/B USIC0 Channel 1 Shift Data Output
U0C0_DOUT O3 St/B USIC0 Channel 0 Shift Data Output
CCU62_CCP
OS1A ISt/BCCU62 Position Input 1
TMS_C IH St/B JTAG Test Mode Selection Input
If JTAG pos. C is selected during start-up, an
internal pull-up device will hold this pin low when
nothing is driving it.
U0C1_DX0F I St/B USIC0 Channel 1 Shift Data Input
8 P7.1 O0 / I S t/B Bit 1 of Port 7, General Purpose Input/Output
EXTCLK O1 St/B Programmable Clock Signal Output
CCU62_CTR
APA ISt/BCCU62 Emergency Trap Input
BRKIN_C ISt/BOCDS Break Signal Input
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 17 V2.1, 2011-07
9 P7.4 O0 / I S t/B Bit 4 of Port 7, General Purpose Input/Output
EMUX2 O1 St/B External Analog MUX Control Output 2 (ADC1)
U0C1_DOUT O2 St/B USIC0 Channel 1 Shift Data Output
U0C1_SCLK
OUT O3 St/B USIC0 Channel 1 Shift Cloc k Output
CCU62_CCP
OS2A ISt/BCCU62 Position Input 2
TCK_C IH St/B DAP0/JTAG Clock Input
If JTAG pos. C is selected during start-up, an
internal pull-up device will hold this pin high when
nothing is driving it.
If DAP pos. 2 is selected during start-up, an
internal pull-down device will hold this pin low
when nothing is driving it.
U0C0_DX0D I St/B USIC0 Channel 0 Shift Data Input
U0C1_DX1E I St/B USIC0 Channel 1 Shift Clock Input
11 P6.0 O0 / I DA/A Bit 0 of Port 6, General Purpose Input/Output
EMUX0 O1 DA/A External Analog MUX Control Output 0 (ADC0)
TxDC2 O2 DA/A CAN Node 2 Transmit Data Output
BRKOUT O3 DA/A OCDS Break Signal Output
ADCx_REQG
TyG IDA/AExternal Request Gate Input for ADC0/1
U1C1_DX0E I DA/A USIC1 Channel 1 Shift Data Input
12 P6.1 O0 / I DA/A Bit 1 of Port 6, General Purpose Input/Output
EMUX1 O1 DA/A External Analog MUX Control Output 1 (ADC0)
T3OUT O2 DA/A GPT12E Timer T3 Toggle Latch Ou tpu t
U1C1_DOUT O3 DA/A USIC1 Channel 1 Shift Data Output
ADCx_REQT
RyE IDA/AExternal Request Trigger Input for ADC0/1
RxDC2E I DA/A CAN Node 2 Receive Data Input
ESR1_6 I DA/A ESR1 Trigger Input 6
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 18 V2.1, 2011-07
13 P6.2 O0 / I DA/A Bit 2 of Port 6, General Purpose Input/Output
EMUX2 O1 DA/A External Analog MUX Control Output 2 (ADC0)
T6OUT O2 DA/A GPT12E Timer T6 Toggle Latch Ou tpu t
U1C1_SCLK
OUT O3 DA/A USIC1 Channel 1 Sh ift Clock Output
U1C1_DX1C I DA/A USIC1 Channel 1 Sh ift Clock Input
15 P15.0 I In/A Bit 0 of Port 15, General Purpose Input
ADC1_CH0 I In/A Analog Input Channel 0 for ADC1
16 P15.2 I In/A Bit 2 of Port 15, General Purpose Input
ADC1_CH2 I In/A Analog Input Channel 2 for ADC1
T5INA I In/A GPT12E Timer T5 Count/Gate Input
17 P15.4 I In/A Bit 4 of Port 15, General Purpose Input
ADC1_CH4 I In/A Analog Input Channel 4 for ADC1
T6INA I In/A GPT12E Timer T6 Count/Gate Input
18 P15.5 I In/A Bit 5 of Port 15, General Purpose Input
ADC1_CH5 I In/A Analog Input Channel 5 for ADC1
T6EUDA I In/A GPT12E Timer T6 External Up/Down Contro l
Input
19 P15.6 I In/A Bit 6 of Port 15, General Purpose Input
ADC1_CH6 I In/A Analog Input Channel 6 for ADC1
20 VAREF - PS/A Reference Voltage for A/D Converters ADC0/1
21 VAGND - PS/A Reference Ground for A/D Converters ADC0/1
22 P5.0 I In/A Bit 0 of Port 5, General Purpose Input
ADC0_CH0 I In/A Analog Input Channel 0 for ADC0
23 P5.2 I In/A Bit 2 of Port 5, General Purpose Input
ADC0_CH2 I In/A Analog Input Channel 2 for ADC0
TDI_A I In/A JTAG Test Data Input
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 19 V2.1, 2011-07
24 P5.3 I In/A Bit 3 of Port 5, General Purpose Input
ADC0_CH3 I In/A Analog Input Channel 3 for ADC0
T3INA I In/A GPT12E Timer T3 Count/Gate Input
28 P5.4 I In/A Bit 4 of Port 5, General Purpose Input
ADC0_CH4 I In/A Analog Input Channel 4 for ADC0
T3EUDA I In/A GPT12E Timer T3 External Up/Down Contro l
Input
TMS_A I In/A JTAG Test Mode Selection Input
29 P5.5 I In/A Bit 5 of Port 5, General Purpose Input
ADC0_CH5 I In/A Analog Input Channel 5 for ADC0
CCU60_T12
HRB IIn/AExternal Run Control Input for T12 of CCU60
30 P5.8 I In/A Bit 8 of Port 5, General Purpose Input
ADC0_CH8 I In/A Analog Input Channel 8 for ADC0
ADC1_CH8 I In/A Analog Input Channel 8 for ADC1
CCU6x_T12H
RC IIn/AExternal Run Control Input for T12 of
CCU60/1/2
CCU6x_T13H
RC IIn/AExternal Run Control Input for T13 of
CCU60/1/2
U2C0_DX0F I In/A USIC2 Channel 0 Shift Data Input
31 P5.9 I In/A Bit 9 of Port 5, General Purpose Input
ADC0_CH9 I In/A Analog Input Channel 9 for ADC0
ADC1_CH9 I In/A Analog Input Channel 9 for ADC1
CC2_T7IN I In/A CA PCOM2 Timer T7 Count Input
32 P5.10 I In/A Bit 10 of Por t 5, Gener al Purpose Input
ADC0_CH10 I In/A Analog Input Channe l 10 for ADC0
ADC1_CH10 I In/A Analog Input Channe l 10 for ADC1
BRKIN_A IIn/AOCDS Break Signal Input
U2C1_DX0F I In/A USIC2 Channel 1 Shift Data Input
CCU61_T13
HRA IIn/AExternal Run Control Input for T13 of CCU61
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 20 V2.1, 2011-07
33 P5.11 I In/A Bit 11 of Por t 5, Gener al Purpose Input
ADC0_CH11 I In/A Analog Input Channe l 11 for ADC0
ADC1_CH11 I In/A Analog Input Channe l 11 for ADC1
34 P5.13 I In/A Bit 13 of Por t 5, Gener al Purpose Input
ADC0_CH13 I In/A Analog Input Channe l 13 for ADC0
35 P5.15 I In/A Bit 15 of Por t 5, Gener al Purpose Input
ADC0_CH15 I In/A Analog Input Channe l 15 for ADC0
RxDC2F I In/A CAN Node 2 Receive Data Input
36 P2.12 O0 / I St/B Bit 12 of Port 2, General Purpose Input/Output
U0C0_SELO
4O1 St/B USIC0 Channel 0 Select/Control 4 Ou tput
U0C1_SELO
3O2 St/B USIC0 Channel 1 Select/Control 3 Ou tput
TXDC2 O3 St/B CAN Node 2 Transmit Data Output
READY IH St/B External Bus Interface READY Input
37 P2.11 O0 / I St/B Bit 11 of Port 2, General Purpose Input/Output
U0C0_SELO
2O1 St/B USIC0 Channel 0 Select/Control 2 Ou tput
U0C1_SELO
2O2 St/B USIC0 Channel 1 Select/Control 2 Ou tput
BHE/WRH OH St/B External Bus Interf. High-Byte Control Output
Can operate either as Byte High Enable (BHE) or
as Write strobe for High Byte (WRH).
39 P2.0 O0 / I St/B Bit 0 of Port 2, General Purpose Input/Output
AD13 OH /
IH St/B External Bus Interface Address/Data Line 13
RxDC0C I St/B CAN Node 0 Receive Data Input
T5INB I St/B GPT12E Timer T5 Count/Gate Input
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 21 V2.1, 2011-07
40 P2.1 O0 / I St/B Bit 1 of Port 2, General Purpose Input/Output
TxDC0 O1 St/B CAN Node 0 Transmit Data Output
AD14 OH /
IH St/B External Bus Interface Address/Data Line 14
T5EUDB I St/B GPT12E Timer T5 External Up /Down Control
Input
ESR1_5 I St/B ESR1 Trigger Input 5
41 P2.2 O0 / I St/B Bit 2 of Port 2, General Purpose Input/Output
TxDC1 O1 St/B CAN Node 1 Transmit Data Output
AD15 OH /
IH St/B External Bus Interface Address/Data Line 15
ESR2_5 I St/B ESR2 Trigger Input 5
42 P4.0 O0 / I St/B Bit 0 of Port 4, General Purpose Input/Output
CC2_CC24 O3 / I St/B CAPCOM2 CC24IO Capture Inp./ Compare Out.
CS0 OH St/B External Bus Interface Chip Select 0 Output
43 P2.3 O0 / I St/B Bit 3 of Port 2, General Purpose Input/Output
U0C0_DOUT O1 St/B USIC0 Channel 0 Shift Data Output
CC2_CC16 O3 / I St/B CAPCOM2 CC16IO Capture Inp./ Compare Out.
A16 OH St/B External Bus Interface Address Line 16
ESR2_0 I St/B ESR2 Trigger Input 0
U0C0_DX0E I St/B USIC0 Channel 0 Shift Data Input
U0C1_DX0D I St/B USIC0 Channel 1 Shift Data Input
RxDC0A I St/B CAN Node 0 Receive Data Input
44 P4.1 O0 / I St/B Bit 1 of Port 4, General Purpose Input/Output
TxDC2 O2 St/B CAN Node 2 Transmit Data Output
CC2_CC25 O3 / I St/B CAPCOM2 CC25IO Capture Inp./ Compare Out.
CS1 OH St/B External Bus Interface Chip Select 1 Output
CCU62_CCP
OS0B ISt/BCCU62 Position Input 0
T4EUDB I St/B GPT12E Timer T4 External Up /Down Control
Input
ESR1_8 I St/B ESR1 Trigger Input 8
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 22 V2.1, 2011-07
45 P2.4 O0 / I St/B Bit 4 of Port 2, General Purpose Input/Output
U0C1_DOUT O1 St/B USIC0 Channel 1 Shift Data Output
TxDC0 O2 St/B CAN Node 0 Transmit Data Output
CC2_CC17 O3 / I St/B CAPCOM2 CC17IO Capture Inp./ Compare Out.
A17 OH St/B External Bus Interface Address Line 17
ESR1_0 I St/B ESR1 Trigger Input 0
U0C0_DX0F I St/B USIC0 Channel 0 Shift Data Input
RxDC1A I St/B CAN Node 1 Receive Data Input
46 P2.5 O0 / I St/B Bit 5 of Port 2, General Purpose Input/Output
U0C0_SCLK
OUT O1 St/B USIC0 Channel 0 Shift Cloc k Output
TxDC0 O2 St/B CAN Node 0 Transmit Data Output
CC2_CC18 O3 / I St/B CAPCOM2 CC18IO Capture Inp./ Compare Out.
A18 OH St/B External Bus Interface Address Line 18
U0C0_DX1D I St/B USIC0 Channel 0 Shift Clock Input
ESR1_10 I St/B ESR1 Trigger Input 10
47 P4.2 O0 / I St/B Bit 2 of Port 4, General Purpose Input/Output
TxDC2 O2 St/B CAN Node 2 Transmit Data Output
CC2_CC26 O3 / I St/B CAPCOM2 CC26IO Capture Inp./ Compare Out.
CS2 OH St/B External Bus Interface Chip Select 2 Output
T2INA I St/B GPT12E Timer T2 Count/Gate Input
CCU62_CCP
OS1B ISt/BCCU62 Position Input 1
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 23 V2.1, 2011-07
48 P2.6 O0 / I St/B Bit 6 of Port 2, General Purpose Input/Output
U0C0_SELO
0O1 St/B USIC0 Channel 0 Select/Control 0 Ou tput
U0C1_SELO
1O2 St/B USIC0 Channel 1 Select/Control 1 Ou tput
CC2_CC19 O3 / I St/B CAPCOM2 CC19IO Capture Inp./ Compare Out.
A19 OH St/B External Bus Interface Address Line 19
U0C0_DX2D I St/B USIC0 Channel 0 Shift Control Input
RxDC0D I St/B CAN Node 0 Receive Data Input
ESR2_6 I St/B ESR2 Trigger Input 6
49 P4.3 O0 / I St/B Bit 3 of Port 4, General Purpose Input/Output
U0C1_DOUT O1 St/B USIC0 Channel 1 Shift Data Output
CC2_CC27 O3 / I St/B CAPCOM2 CC27IO Capture Inp./ Compare Out.
CS3 OH St/B External Bus Interface Chip Select 3 Output
RxDC2A I St/B CAN Node 2 Receive Data Input
T2EUDA I St/B GPT12E Timer T2 External Up /Down Control
Input
CCU62_CCP
OS2B ISt/BCCU62 Position Input 2
53 P0.0 O0 / I St/B Bit 0 of Port 0, General Purpose Input/Output
U1C0_DOUT O1 St/B USIC1 Channel 0 Shift Data Output
CCU61_CC6
0O3 St/B CCU61 Channel 0 IOutput
A0 OH St/B External Bus Interface Address Line 0
U1C0_DX0A I St/B USIC1 Channel 0 Shift Data Input
CCU61_CC6
0INA ISt/BCCU61 Channel 0 Input
ESR1_11 I St/B ESR1 Trigger Input 11
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 24 V2.1, 2011-07
54 P2.7 O0 / I St/B Bit 7 of Port 2, General Purpose Input/Output
U0C1_SELO
0O1 St/B USIC0 Channel 1 Select/Control 0 Ou tput
U0C0_SELO
1O2 St/B USIC0 Channel 0 Select/Control 1 Ou tput
CC2_CC20 O3 / I St/B CAPCOM2 CC20IO Capture Inp./ Compare Out.
A20 OH St/B External Bus Interface Address Line 20
U0C1_DX2C I St/B USIC0 Channel 1 Shift Control Input
RxDC1C I St/B CAN Node 1 Receive Data Input
ESR2_7 I St/B ESR2 Trigger Input 7
55 P0.1 O0 / I St/B Bit 1 of Port 0, General Purpose Input/Output
U1C0_DOUT O1 St/B USIC1 Channel 0 Shift Data Output
TxDC0 O2 St/B CAN Node 0 Transmit Data Output
CCU61_CC6
1O3 St/B CCU61 Channel 1 Output
A1 OH St/B External Bus Interface Address Line 1
U1C0_DX0B I St/B USIC1 Channel 0 Shift Data Input
CCU61_CC6
1INA ISt/BCCU61 Channel 1 Input
U1C0_DX1A I St/B USIC1 Channel 0 Shift Clock Input
56 P2.8 O0 / I DP/B Bit 8 of Port 2, General Purpose Input/Output
U0C1_SCLK
OUT O1 DP/B USIC0 Channel 1 Sh ift Clock Output
EXTCLK O2 DP/B Programmable Clock Signal Output
1)
CC2_CC21 O3 / I DP/B CAPCOM2 CC21IO Capture Inp./ Compare Out.
A21 OH DP/B External Bus Interface Address Line 21
U0C1_DX1D I DP/B USIC0 Channel 1 Sh ift Clock Input
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 25 V2.1, 2011-07
57 P2.9 O0 / I St/B Bit 9 of Port 2, General Purpose Input/Output
U0C1_DOUT O1 St/B USIC0 Channel 1 Shift Data Output
TxDC1 O2 St/B CAN Node 1 Transmit Data Output
CC2_CC22 O3 / I St/B CAPCOM2 CC22IO Capture Inp./ Compare Out.
A22 OH St/B External Bus Interface Address Line 22
CLKIN1 I St/B Clock Signal Input 1
TCK_A IH St/B DAP0/JTAG Clock Input
If JTAG pos. A is selected during start-up, an
internal pull-up device will hold this pin high when
nothing is driving it.
If DAP pos. 0 is selected during start-up, an
internal pull-down device will hold this pin low
when nothing is driving it.
58 P0.2 O0 / I St/B Bit 2 of Port 0, General Purpose Input/Output
U1C0_SCLK
OUT O1 St/B USIC1 Channel 0 Shift Cloc k Output
TxDC0 O2 St/B CAN Node 0 Transmit Data Output
CCU61_CC6
2O3 St/B CCU61 Channel 2 Output
A2 OH St/B External Bus Interface Address Line 2
U1C0_DX1B I St/B USIC1 Channel 0 Shift Clock Input
CCU61_CC6
2INA ISt/BCCU61 Channel 2 Input
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 26 V2.1, 2011-07
59 P10.0 O0 / I St/B Bit 0 of Port 10, General Purpose Input/Ou tput
U0C1_DOUT O1 St/B USIC0 Channel 1 Shift Data Output
CCU60_CC6
0O2 St/B CCU60 Channel 0 Output
AD0 OH /
IH St/B External Bus Interface Address/Data Line 0
CCU60_CC6
0INA ISt/BCCU60 Channel 0 Input
ESR1_2 I St/B ESR1 Trigger Input 2
U0C0_DX0A I St/B USIC0 Channel 0 Shift Data Input
U0C1_DX0A I St/B USIC0 Channel 1 Shift Data Input
60 P10.1 O0 / I St/B Bit 1 of Port 10, General Purpose Input/Ou tput
U0C0_DOUT O1 St/B USIC0 Channel 0 Shift Data Output
CCU60_CC6
1O2 St/B CCU60 Channel 1 Output
AD1 OH /
IH St/B External Bus Interface Address/Data Line 1
CCU60_CC6
1INA ISt/BCCU60 Channel 1 Input
U0C0_DX1A I St/B USIC0 Channel 0 Shift Clock Input
U0C0_DX0B I St/B USIC0 Channel 0 Shift Data Input
61 P0.3 O0 / I St/B Bit 3 of Port 0, General Purpose Input/Output
U1C0_SELO
0O1 St/B USIC1 Channel 0 Select/Control 0 Ou tput
U1C1_SELO
1O2 St/B USIC1 Channel 1 Select/Control 1 Ou tput
CCU61_COU
T60 O3 St/B CCU61 Channel 0 Output
A3 OH St/B External Bus Interface Address Line 3
U1C0_DX2A I St/B USIC1 Channel 0 Shift Control Input
RxDC0B I St/B CAN Node 0 Receive Data Input
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 27 V2.1, 2011-07
62 P10.2 O0 / I St/B Bit 2 of Port 10, General Purpose Input/Ou tput
U0C0_SCLK
OUT O1 St/B USIC0 Channel 0 Shift Cloc k Output
CCU60_CC6
2O2 St/B CCU60 Channel 2 Output
AD2 OH /
IH St/B External Bus Interface Address/Data Line 2
CCU60_CC6
2INA ISt/BCCU60 Channel 2 Input
U0C0_DX1B I St/B USIC0 Channel 0 Shift Clock Input
63 P0.4 O0 / I St/B Bit 4 of Port 0, General Purpose Input/Output
U1C1_SELO
0O1 St/B USIC1 Channel 1 Select/Control 0 Ou tput
U1C0_SELO
1O2 St/B USIC1 Channel 0 Select/Control 1 Ou tput
CCU61_COU
T61 O3 St/B CCU61 Channel 1 Output
A4 OH St/B External Bus Interface Address Line 4
U1C1_DX2A I St/B USIC1 Channel 1 Shift Control Input
RxDC1B I St/B CAN Node 1 Receive Data Input
ESR2_8 I St/B ESR2 Trigger Input 8
65 P2.13 O0 / I St/B Bit 13 of Port 2, General Purpose Input/Output
U2C1_SELO
2O1 St/B USIC2 Channel 1 Select/Control 2 Ou tput
RxDC2D I St/B CAN Node 2 Receive Data Input
66 P2.10 O0 / I St/B Bit 10 of Port 2, General Purpose Input/Output
U0C1_DOUT O1 St/B USIC0 Channel 1 Shift Data Output
U0C0_SELO
3O2 St/B USIC0 Channel 0 Select/Control 3 Ou tput
CC2_CC23 O3 / I St/B CAPCOM2 CC23IO Capture Inp./ Compare Out.
A23 OH St/B External Bus Interface Address Line 23
U0C1_DX0E I St/B USIC0 Channel 1 Shift Data Input
CAPINA I St/B GPT12E Register CAPREL Capture Input
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 28 V2.1, 2011-07
67 P10.3 O0 / I St/B Bit 3 of Port 10, General Purpose Input/Ou tput
CCU60_COU
T60 O2 St/B CCU60 Channel 0 Output
AD3 OH /
IH St/B External Bus Interface Address/Data Line 3
U0C0_DX2A I St/B USIC0 Channel 0 Shift Control Input
U0C1_DX2A I St/B USIC0 Channel 1 Shift Control Input
68 P0.5 O0 / I St/B Bit 5 of Port 0, General Purpose Input/Output
U1C1_SCLK
OUT O1 St/B USIC1 Channel 1 Shift Cloc k Output
U1C0_SELO
2O2 St/B USIC1 Channel 0 Select/Control 2 Ou tput
CCU61_COU
T62 O3 St/B CCU61 Channel 2 Output
A5 OH St/B External Bus Interface Address Line 5
U1C1_DX1A I St/B USIC1 Channel 1 Shift Clock Input
U1C0_DX1C I St/B USIC1 Channel 0 Shift Clock Input
RXDC3E I St/B CAN Node 3 Receive Data Input
69 P10.4 O0 / I St/B Bit 4 of Port 10, General Purpose Input/Ou tput
U0C0_SELO
3O1 St/B USIC0 Channel 0 Select/Control 3 Ou tput
CCU60_COU
T61 O2 St/B CCU60 Channel 1 Output
AD4 OH /
IH St/B External Bus Interface Address/Data Line 4
U0C0_DX2B I St/B USIC0 Channel 0 Shift Control Input
U0C1_DX2B I St/B USIC0 Channel 1 Shift Control Input
ESR1_9 I St/B ESR1 Trigger Input 9
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 29 V2.1, 2011-07
70 P10.5 O0 / I St/B Bit 5 of Port 10, General Purpose Input/Ou tput
U0C1_SCLK
OUT O1 St/B USIC0 Channel 1 Shift Cloc k Output
CCU60_COU
T62 O2 St/B CCU60 Channel 2 Output
U2C0_DOUT O3 St/B USIC2 Channel 0 Shift Data Output
AD5 OH /
IH St/B External Bus Interface Address/Data Line 5
U0C1_DX1B I St/B USIC0 Channel 1 Shift Clock Input
71 P0.6 O0 / I St/B Bit 6 of Port 0, General Purpose Input/Output
U1C1_DOUT O1 St/B USIC1 Channel 1 Shift Data Output
TxDC1 O2 St/B CAN Node 1 Transmit Data Output
CCU61_COU
T63 O3 St/B CCU61 Channel 3 Output
A6 OH St/B External Bus Interface Address Line 6
U1C1_DX0A I St/B USIC1 Channel 1 Shift Data Input
CCU61_CTR
APA ISt/BCCU61 Emergency Trap Input
U1C1_DX1B I St/B USIC1 Channel 1 Shift Clock Input
72 P10.6 O0 / I St/B Bit 6 of Port 10, General Purpose Input/Ou tput
U0C0_DOUT O1 St/B USIC0 Channel 0 Shift Data Output
U1C0_SELO
0O3 St/B USIC1 Channel 0 Select/Control 0 Ou tput
AD6 OH /
IH St/B External Bus Interface Address/Data Line 6
U0C0_DX0C I St/B USIC0 Channel 0 Shift Data Input
U1C0_DX2D I St/B USIC1 Channel 0 Shift Control Input
CCU60_CTR
APA ISt/BCCU60 Emergency Trap Input
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 30 V2.1, 2011-07
73 P10.7 O0 / I St/B Bit 7 of Port 10, General Purpose Input/Ou tput
U0C1_DOUT O1 St/B USIC0 Channel 1 Shift Data Output
CCU60_COU
T63 O2 St/B CCU60 Channel 3 Output
AD7 OH /
IH St/B External Bus Interface Address/Data Line 7
U0C1_DX0B I St/B USIC0 Channel 1 Shift Data Input
CCU60_CCP
OS0A ISt/BCCU60 Position Input 0
T4INB I St/B GPT12E Timer T4 Count/Gate Input
74 P0.7 O0 / I St/B Bit 7 of Port 0, General Purpose Input/Output
U1C1_DOUT O1 St/B USIC1 Channel 1 Shift Data Output
U1C0_SELO
3O2 St/B USIC1 Channel 0 Select/Control 3 Ou tput
TxDC3 O3 St/B CAN Node 3 Transmit Data Output
A7 OH St/B External Bus Interface Address Line 7
U1C1_DX0B I St/B USIC1 Channel 1 Shift Data Input
CCU61_CTR
APB ISt/BCCU61 Emergency Trap Input
78 P1.0 O0 / I St/B Bit 0 of Port 1, General Purpose Input/Output
U1C0_MCLK
OUT O1 St/B USIC1 Channel 0 Master Cloc k Output
U1C0_SELO
4O2 St/B USIC1 Channel 0 Select/Control 4 Ou tput
A8 OH St/B External Bus Interface Address Line 8
ESR1_3 I St/B ESR1 Trigger Input 3
CCU62_CTR
APB ISt/BCCU62 Emergency Trap Input
T6INB I St/B GPT12E Timer T6 Count/Gate Input
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 31 V2.1, 2011-07
79 P10.8 O0 / I St/B Bit 8 of Port 10, General Purpose Input/Ou tput
U0C0_MCLK
OUT O1 St/B USIC0 Channel 0 Master Cloc k Output
U0C1_SELO
0O2 St/B USIC0 Channel 1 Select/Control 0 Ou tput
U2C1_DOUT O3 St/B USIC2 Channel 1 Shift Data Output
AD8 OH /
IH St/B External Bus Interface Address/Data Line 8
CCU60_CCP
OS1A ISt/BCCU60 Position Input 1
U0C0_DX1C I St/B USIC0 Channel 0 Shift Clock Input
BRKIN_B ISt/BOCDS Break Signal Input
T3EUDB I St/B GPT12E Timer T3 External Up /Down Control
Input
80 P10.9 O0 / I St/B Bit 9 of Port 10, General Purpose Input/Ou tput
U0C0_SELO
4O1 St/B USIC0 Channel 0 Select/Control 4 Ou tput
U0C1_MCLK
OUT O2 St/B USIC0 Channel 1 Master Cloc k Output
AD9 OH /
IH St/B External Bus Interface Address/Data Line 9
CCU60_CCP
OS2A ISt/BCCU60 Position Input 2
TCK_B IH St/B DAP0/JTAG Clock Input
If JTAG pos. B is selected during start-up, an
internal pull-up device will hold this pin high when
nothing is driving it.
If DAP pos. 1 is selected during start-up, an
internal pull-down device will hold this pin low
when nothing is driving it.
T3INB I St/B GPT12E Timer T3 Count/Gate Input
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 32 V2.1, 2011-07
81 P1.1 O0 / I St/B Bit 1 of Port 1, General Purpose Input/Output
CCU62_COU
T62 O1 St/B CCU62 Channel 2 Output
U1C0_SELO
5O2 St/B USIC1 Channel 0 Select/Control 5 Ou tput
U2C1_DOUT O3 St/B USIC2 Channel 1 Shift Data Output
A9 OH St/B External Bus Interface Address Line 9
ESR2_3 I St/B ESR2 Trigger Input 3
U2C1_DX0C I St/B USIC2 Channel 1 Shift Data Input
82 P10.10 O0 / I St/B Bit 10 of Port 10, General Purpose Input/Output
U0C0_SELO
0O1 St/B USIC0 Channel 0 Select/Control 0 Ou tput
CCU60_COU
T63 O2 St/B CCU60 Channel 3 Output
AD10 OH /
IH St/B External Bus Interface Address/Data Line 10
U0C0_DX2C I St/B USIC0 Channel 0 Shift Control Input
U0C1_DX1A I St/B USIC0 Channel 1 Shift Clock Input
TDI_B IH St/B JTAG Test Data Input
If JTAG pos. B is selected during start-up, an
internal pull-up device will hold this pin high when
nothing is driving it.
83 P10.11 O0 / I St/B Bit 11 of Port 10, General Purpose Input/Output
U1C0_SCLK
OUT O1 St/B USIC1 Channel 0 Shift Cloc k Output
BRKOUT O2 St/B OCDS Break Signal Output
AD11 OH /
IH St/B External Bus Interface Address/Data Line 11
U1C0_DX1D I St/B USIC1 Channel 0 Shift Clock Input
RxDC2B I St/B CAN Node 2 Receive Data Input
TMS_B IH St/B JTAG Test Mode Selection Input
If JTAG pos. B is selected during start-up, an
internal pull-up device will hold this pin high when
nothing is driving it.
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 33 V2.1, 2011-07
84 P1.2 O0 / I St/B Bit 2 of Port 1, General Purpose Input/Output
CCU62_CC6
2O1 St/B CCU62 Channel 2 Output
U1C0_SELO
6O2 St/B USIC1 Channel 0 Select/Control 6 Ou tput
U2C1_SCLK
OUT O3 St/B USIC2 Channel 1 Shift Cloc k Output
A10 OH St/B External Bus Interface Address Line 10
ESR1_4 I St/B ESR1 Trigger Input 4
CCU61_T12
HRB ISt/BExternal Run Control Input for T12 of CCU61
CCU62_CC6
2INA ISt/BCCU62 Channel 2 Input
U2C1_DX0D I St/B USIC2 Channel 1 Shift Data Input
U2C1_DX1C I St/B USIC2 Channel 1 Shift Clock Input
85 P10.12 O0 / I St/B Bit 12 of Port 10, General Purpose Input/Output
U1C0_DOUT O1 St/B USIC1 Channel 0 Shift Data Output
TxDC2 O2 St/B CAN Node 2 Transmit Data Output
TDO_B OH /
IH St/B JTAG Test Data Output / DAP1 Input/Output
If DAP pos. 1 is selected during start-up, an
internal pull-down device will hold this pin low
when nothing is driving it.
AD12 OH /
IH St/B External Bus Interface Address/Data Line 12
U1C0_DX0C I St/B USIC1 Channel 0 Shift Data Input
U1C0_DX1E I St/B USIC1 Channel 0 Shift Clock Input
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 34 V2.1, 2011-07
86 P10.13 O0 / I St/B Bit 13 of Port 10, General Purpose Input/Output
U1C0_DOUT O1 St/B USIC1 Channel 0 Shift Data Output
TxDC3 O2 St/B CAN Node 3 Transmit Data Output
U1C0_SELO
3O3 St/B USIC1 Channel 0 Select/Control 3 Ou tput
WR/WRL OH St/B External Bus In terface Write Strobe Output
Active for each external write access, when WR,
active for ext. writes to the low byte, when WRL.
U1C0_DX0D I St/B USIC1 Channel 0 Shift Data Input
87 P1.3 O0 / I St/B Bit 3 of Port 1, General Purpose Input/Output
CCU62_COU
T63 O1 St/B CCU62 Channel 3 Output
U1C0_SELO
7O2 St/B USIC1 Channel 0 Select/Control 7 Ou tput
U2C0_SELO
4O3 St/B USIC2 Channel 0 Select/Control 4 Ou tput
A11 OH St/B External Bus Interface Address Line 11
ESR2_4 I St/B ESR2 Trigger Input 4
CCU62_T12
HRB ISt/BExternal Run Control Input for T12 of CCU62
89 P10.14 O0 / I St/B Bit 14 of Port 10, General Purpose Input/Output
U1C0_SELO
1O1 St/B USIC1 Channel 0 Select/Control 1 Ou tput
U0C1_DOUT O2 St/B USIC0 Channel 1 Shift Data Output
RD OH St/B External Bus Interface Read Strob e Output
ESR2_2 I St/B ESR2 Trigger Input 2
U0C1_DX0C I St/B USIC0 Channel 1 Shift Data Input
RxDC3C I St/B CAN Node 3 Receive Data Input
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 35 V2.1, 2011-07
90 P1.4 O0 / I St/B Bit 4 of Port 1, General Purpose Input/Output
CCU62_COU
T61 O1 St/B CCU62 Channel 1 Output
U1C1_SELO
4O2 St/B USIC1 Channel 1 Select/Control 4 Ou tput
U2C0_SELO
5O3 St/B USIC2 Channel 0 Select/Control 5 Ou tput
A12 OH St/B External Bus Interface Address Line 12
U2C0_DX2B I St/B USIC2 Channel 0 Shift Control Input
91 P10.15 O0 / I St/B Bit 15 of Port 10, General Purpose Input/Output
U1C0_SELO
2O1 St/B USIC1 Channel 0 Select/Control 2 Ou tput
U0C1_DOUT O2 St/B USIC0 Channel 1 Shift Data Output
U1C0_DOUT O3 St/B USIC1 Channel 0 Shift Data Output
ALE OH St/B External Bus Interf. Addr. Latch Enable Ou tput
U0C1_DX1C I St/B USIC0 Channel 1 Shift Clock Input
92 P1.5 O0 / I St/B Bit 5 of Port 1, General Purpose Input/Output
CCU62_COU
T60 O1 St/B CCU62 Channel 0 Output
U1C1_SELO
3O2 St/B USIC1 Channel 1 Select/Control 3 Ou tput
BRKOUT O3 St/B OCDS Break Signal Output
A13 OH St/B External Bus Interface Address Line 13
U2C0_DX0C I St/B USIC2 Channel 0 Shift Data Input
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 36 V2.1, 2011-07
93 P1.6 O0 / I St/B Bit 6 of Port 1, General Purpose Input/Output
CCU62_CC6
1O1 / I St/B CC U62 Channel 1 Output
U1C1_SELO
2O2 St/B USIC1 Channel 1 Select/Control 2 Ou tput
U2C0_DOUT O3 St/B USIC2 Channel 0 Shift Data Output
A14 OH St/B External Bus Interface Address Line 14
U2C0_DX0D I St/B USIC2 Channel 0 Shift Data Input
CCU62_CC6
1INA ISt/BCCU62 Channel 1 Input
94 P1.7 O0 / I St/B Bit 7 of Port 1, General Purpose Input/Output
CCU62_CC6
0O1 St/B CCU62 Channel 0 Output
U1C1_MCLK
OUT O2 St/B USIC1 Channel 1 Master Cloc k Output
U2C0_SCLK
OUT O3 St/B USIC2 Channel 0 Shift Cloc k Output
A15 OH St/B External Bus Interface Address Line 15
U2C0_DX1C I St/B USIC2 Channel 0 Shift Clock Input
CCU62_CC6
0INA ISt/BCCU62 Channel 0 Input
95 XTAL2 O Sp/M Crystal Oscillator Amplifier Output
96 XTAL1 I Sp/M Crystal Oscillator Amplifier In pu t
To clock the device from an external source, drive
XTAL1, while leaving XTAL2 unconnected.
Voltages on XTAL1 must comply to the core
supply voltage VDDIM.
ESR2_9 I St/B ESR2 Trigger Input 9
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 37 V2.1, 2011-07
97 PORST IIn/BPower On Reset Input
A low level at this pin resets the XE164xM
completely. A spike filter suppresses input pulses
<10 ns. Input pulses >100 ns safely pass the filter.
The minimum durati on for a safe recognition
should be 120 ns.
An internal pull-up de vice will hold this pin high
when nothing is driving it.
98 ESR1 O 0 / I St/B External Service Request 1
After power-up, an internal weak pull-up device
holds this pin high when nothing is driving it.
RxDC0E I St/B CAN Node 0 Receive Data Input
U1C0_DX0F I St/B USIC1 Channel 0 Shift Data Input
U1C0_DX2C I St/B USIC1 Channel 0 Shift Control Input
U1C1_DX0C I St/B USIC1 Channel 1 Shift Data Input
U1C1_DX2B I St/B USIC1 Channel 1 Shift Control Input
U2C1_DX2C I St/B USIC2 Channel 1 Shift Control Input
99 ESR0 O 0 / I St/B External Service Request 0
After power-up, ESR0 operates as open-drain
bidirectional reset with a weak pull-up.
U1C0_DX0E I St/B USIC1 Channel 0 Shift Data Input
U1C0_DX2B I St/B USIC1 Channel 0 Shift Control Input
10 VDDIM - PS/M Digital Core Supply Voltage for Domain M
Decouple with a ceramic capacitor, see Data
Sheet for details.
38,
64,
88
VDDI1 - PS/1 Digital Core Supply Voltage for Domain 1
Decouple with a ceramic capacitor, see Data
Sheet for details.
All VDDI1 pins must be connected to each other.
14 VDDPA - PS/A Digital Pad Supply Voltage for Domain A
Connect decoupling capacitors to adjacent
VDDP/VSS pin pairs as close as possible to the pins.
Note: The A/D_Converters and ports P5, P6 and
P15 are fed from supply voltage VDDPA.
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 38 V2.1, 2011-07
2,
25,
27,
50,
52,
75,
77,
100
VDDPB - PS/B Digital Pad Supply Voltage for Domain B
Connect decoupling capacitors to adjacent
VDDP/VSS pin pairs as close as possible to the pins.
Note: The on-chip voltage regu lators and all po rts
except P5, P6 and P15 are fed from supply
voltage VDDPB.
1,
26,
51,
76
VSS - PS/-- Digital Ground
All VSS pins must be connected to the ground-line
or ground-plane.
Note: Also the exposed pad is connected
internally to VSS. To improve the EMC
behavior, it is recommended to connect th e
exposed pad to the board ground.
For thermal aspects, please refer to the
Data Sheet. Board layout examples are
given in an application note.
1) To generate the reference clock output for bus timing measurement, fSYS must be selected as source for
EXTCLK and P2.8 must be selected as output pin. Also the high-speed clock pad must be enabled. This
configuration is referred to as reference clock output signal CLKOUT.
Table 5 Pin Definitions and Functio ns (cont’d)
Pin Symbol Ctrl. Type Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
General Device Information
Data Sheet 39 V2.1, 2011-07
2.2 Identification Registers
The identification registers describe the current version of the XE164xM and of its
modules.
Table 6 XE164xM Identification Registers
Short Name Value Address Notes
SCU_IDMANUF 1820H00’F07EH
SCU_IDCHIP 3801H00’F07CH
SCU_IDMEM 30D0H00’F07AH
SCU_IDPROG 1313H00’F078H
JTAG_ID 0017’E083H--- marking EES-AA, ES-AA or AA
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 40 V2.1, 2011-07
3 Functional Description
The architecture of the XE164xM combines advantages of RISC, CISC, and DSP
processors with an advanced peripheral subsystem in a well-balanced design. On-chip
memory blocks allow the design of compact systems-on-silicon with maximum
performance suited for computing, control, and communication.
The on-chip memory blocks (program code memory and SRAM, dual-port RAM, data
SRAM) and the generic peripherals are connected to the CPU by separate high-speed
buses. Another bus, the LXBus, connects additional on-chip resources and external
resources (see Figure 4). This bus structure enhances overall system performance by
enabling the concurrent op eration of several subsystems of the XE164xM.
The block diagram gives an overview of the on-chip components and the advanced
internal bus structure of the XE164xM.
Figure 4 Block Diagram
DPRAM
CPU
PMU
DMU
ADC0
Module
10-Bit
8-Bit
RTC
MCHK
Interrupt & PEC
EBC
LXBus C ont rol
Ex t ernal Bus
Control
DSRAM
System Functions
Cl o ck, Re se t, P o we r
Control, StandBy RAM
OCDS
D ebug Support
Interrupt Bus
Peripheral D ata Bus
Analog and D igit al General Purpos e I O (GPI O) Port s
MC_BL_BLOCKDIAGRAM
GPT
5
Timers
CC2
Modules
16
Chan.
LXBus
WDT
Multi
CAN
Shared
MOs
for
Nodes
CCU6x
Modules
3+1
Chan.
each
USICx
Modules
2
Chan.
each
PSRAM
Flash
Memory
IMB
MAC Unit
MPU
ADC1
Module
10-Bit
8-Bit
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 41 V2.1, 2011-07
3.1 Memory Subsystem and Organization
The memory space of the XE164xM is config ured in the von Neumann architecture. In
this architecture all internal and external resources, including code memory, data
memory, registers and I/O ports, are organized in the same linear address space.
Table 7 XE164xM Memory Map 1)
Address Area Start Loc. End Loc. Area Size2) Notes
IMB register space FF’FF0 0HFF’FFFFH256 Bytes
Reserved (Access trap) F0’0000HFF’FEFFH<1 Mbyte Minus IMB registers
Reserved for EPSRAM E8’8000HEF’FFFFH480 Kbytes Mirrors EPSRAM
Emulated PSRAM E8’0000HE8’7FFFH32 Kbytes With Flash timing
Reserved for PSRAM E0’8000HE7’FFFFH480 Kbytes Mirrors PSRAM
Program SRAM E0’0000HE0’7FFFH32 Kbytes Maximum speed
Reserved for Flash CD’0000HDF’FFFFH<1.25 Mbytes
Program Flash 3 CC’0000HCC’FFFFH64 Kbytes
Program Flash 2 C8’0000HCB’FFFFH256 Kbytes
Program Flash 1 C4’0000HC7’FFFFH256 Kbytes
Program Flash 0 C0’0000HC3’FFFFH256 Kbytes 3)
External memory area 40’0000HBF’FFFFH8 Mbytes
Available Ext. IO area4) 21’0000H3F’FFFFH< 2 Mbytes Minus USIC/CAN
Reserved 20’BC00H20’FFFFH17 Kbytes
USIC alternate regs. 20’B000H20’BFFFH4 Kbytes Accessed via EBC
MultiCAN alternate
regs. 20’8000H20’AFFFH12 Kbytes Accessed via EBC
Reserved 20’6000H20’7FFFH8 Kbytes
USIC registers 20’4000H20’5FFFH8 Kbytes Accessed via EBC
MultiCAN registers 20’0000H20’3FFFH16 Kbytes Accessed via EBC
External memory area 01’0000H1F’FFFFH< 2 Mbytes Minus segment 0
SFR area 00’FE00H00’FFFFH0.5 Kbyte
Dual-Port RAM 00’F600H00’FDFFH2 Kbytes
Reserved for DPRAM 00’F200H00’F5FFH1 Kbyte
ESFR area 00’F000H00’F1FFH0.5 Kbyte
XSFR area 00’E000H00’EFFFH4 Kbytes
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 42 V2.1, 2011-07
This common memory space consists of 16 Mbytes organized as 256 segments of
64 Kbytes; each segment contains four data pages of 16 Kbytes. The entire memory
space can be accessed bytewise or wordwise. Po rti ons of the o n-chip DPR AM an d th e
register spaces (ESFR/SFR) additionally are directly bit addressable.
The internal data memory areas and the Special Function Register areas (SFR and
ESFR) are mapped into segment 0, the system segment.
The Program Management Unit (PMU) handles all code fetches and, therefore, controls
access to the program memories such as Flash memory and PSRAM.
The Data Management Unit (DMU) handles all data transfers and, therefore, controls
access to the DSRAM and the on-chip peripherals.
Both units (PMU and DMU) are connected to the high-speed system bus so that they can
exchange data. This is required if operands are read from program memory, code or
data is written to the PSRAM, code is fetched from external memory, or data is read from
or written to external resources. These inclu de peripheral s on the LXBus such as USIC
or MultiCAN. The system bus allows concurrent two-way communication for maximum
transfer performance.
Up to 32 Kbytes of on-chip Program SRAM (PSRAM) are provided to store user code
or data. The PSRAM is accessed via the PMU and is optimized for code fetches. A
section of the PSRAM with programmable size can be write- protected.
Up to 16 Kbytes of on-chip Data SRAM (DSRAM) are used for storage of general user
data. The DSRAM is accessed via a separate interface and is optimized for data access.
2 Kbytes of on-chip Dual-Port RAM (DPRAM) provide storage for user-defined
variables, for the system stack, and for genera l purpose register banks. A register bank
can consist of up to 16 word-wide (R0 to R15) and/or byte-wide (RL0, RH0, …, RL7,
RH7) General Purpose Registers (GPRs).
The upper 256 bytes of the DPRAM are directly bit addressable. When used by a GPR,
any location in the DPRAM is bit addressable.
Data SRAM 00’A000H00’DFFFH16 Kbytes
Reserved for DSRAM 00’8000H00’9FFFH8 Kbytes
External memory area 00’0000H00’7FFFH32 Kbytes
1) Accesses to the shaded areas are reserved. In devices with external bus interface these accesses generate
external bus accesses.
2) The areas marked with “<” are slightly smaller than indicated. See column “Notes”.
3) The uppermost 4-Kbyte sector of the first Flash segment is reserved for internal use (C0’F000H to C0’FFFFH).
4) Several pipeline optimizations are not active with in the external IO area. This is necessary to control external
peripherals properly.
Table 7 XE164xM Memory Map (cont’d)1)
Address Area Start Loc. End Loc. Area Size2) Notes
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 43 V2.1, 2011-07
8 Kbytes of on-chip Stand-By SRAM (SBRAM) provide storage for system-relevant
user data that must be preserved while the major part of the device is powered down.
The SBRAM is accessed via a specific interface and is powered in domain M.
1024 bytes (2 × 512 bytes) of the address space are reserved for the Special Function
Register areas (SFR space and ESFR space). SFRs are word-wide registers which are
used to control and monitor functions of the different on-chip units. Unused SFR
addresses are reserved for future members of the XE166 Family. In order to ensure
upward compatibility they should either not be accessed or written with zeros.
The on-chip Flash memory stores code, constant data, and control data. Th e on-chip
Flash memory consists of 1 module of 64 Kbytes (preferably for data storage) and
modules with a maximum capacity of 256 Kbytes each. Each module is organized in
sectors of 4 Kbytes.
The uppermost 4-Kbyte sector of segment 0 (located in Flash module 0) is used
internally to store operation control parameters and protection information.
Note: The actual size of the Flash memory depends on the chosen device type.
Each sector can be separately write protected1), erased and programmed (in blocks of
128 Bytes). The co mplete Flash area can be read-protected. A user-defined password
sequence temporarily unlocks protected areas. The Flash modules combine 128-bit
read access with pr otected and efficien t writing algorithms for pr ogramming and erasing .
Dynamic error correction provides extremely high read data security for all read access
operations. Access to different Flash modules can be executed in parallel.
For Flash parameters, please see Section 4.5.
Memory Content Protection
The contents of on-chip memories can be protected against soft errors (induced e.g. by
radiation) by activating the parity mechanism or the Error Correction Code (ECC).
The parity mechanism can detect a single-bi t e rro r and prevent the software from using
incorrect data or executing incorrect instructions.
The ECC mechanism can detect and automatically correct single-bit errors. This
supports the stable operation of the system.
It is strongly recommended to activate the ECC mechanism wherever possible because
this dramatically increases the robustness of an application agai nst such soft errors.
1) To save control bits, sectors are clustered for protection purposes, they remain separate for
programming/erasing.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 44 V2.1, 2011-07
3.2 External Bus Controller
All external m emory access operations are performed by a special on-chip External Bus
Controller (EBC). The EBC also controls access to resources connected to the on-chip
LXBus (MultiCAN and the USIC modules). The LXBus is an internal representation of
the external bus that allows access to inte grated peripherals and modules in the same
way as to external components.
The EBC can be programmed either to Single Chip Mode, when no external memory is
required, or to an external bus mode with the following selections1):
Address Bus Width with a range of 0 … 24-bit
Data Bus Width 8-bit or 16-bit
Bus Operation Multiplexed or Demultiplexed
The bus interface uses Port 10 and Port 2 for addresses and data. In the demultiplexed
bus modes, the lower addresses are output separately on Port 0 and Port 1. The number
of active segment address lines is selectab le, restricting the exte rnal address space to
8 Mbytes … 64 Kbytes. This is required when interface lines shall be assigned to Port 2.
External CS signals (address windows plus default) can be generated and output on
Port 4 in order to save external glue logic. External modules can be di rectly connected
to the common address/data bus and their individual select lines.
Important timing characteristics of the external bus interface are programmable (with
registers TCONCSx/FCONCSx) to allow the user to adapt it to a wide range of different
types of memories and external peripherals.
Access to very slow memories or modules with varying access times is suppo rted by a
special ‘Ready’ function. The active level of the contro l input signal is selectable.
In addition, up to four independent address windows may be defined (using registers
ADDRSELx) to control access to resources with different bus characteristics. These
address windows are arranged hierarchica lly where window 4 overrides window 3, and
window 2 overrides window 1. All accesses to locations not covered by these four
address windows are controlled by TCONCS0/FCONCS0. The currently active window
can generate a chip select signal.
The external bus timing is based on the rising edge of the reference clock output
CLKOUT. The external bus protocol is compatible with that of the standard C166 Family.
1) Bus modes are switched dynamically if several address windows with different mode settings are used.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 45 V2.1, 2011-07
3.3 Central Processing Unit (CPU)
The core of the CPU consists of a 5-stage execution pipeline with a 2-stage instru ction-
fetch pipeline, a 16-bit arithmetic and logic unit (ALU), a 32-bit/40-bit multiply and
accumulate unit (MAC), a register-file providing three register banks, and dedicated
SFRs. The ALU features a multiply-and-divide uni t, a bit-mask generator, and a barrel
shifter.
Figure 5 CPU Block Diagram
DPRAM
CPU
IPIP
RF
R0
R1
GPRs
R14
R15
R0
R1
GPRs
R14
R15
IFU
Injection/
Exception
Handler
ADU
MAC
mca04917_x.vsd
CPUCON1
CPUCON2
CSP IP
Return
Stack
FIFO
Branch
Unit
Prefetch
Unit VECSEG
TFR
+/-
IDX0
IDX1
QX0
QX1
QR0
QR1 DPP0
DPP1
DPP2
DPP3
SPSEG
SP
STKOV
STKUN
+/-
MRW
MCW
MSW
MAL
+/-
MAH
Multiply
Unit
ALU
Division Unit
Multiply Unit
Bit-Mask-Gen.
Barrel-Shifter
+/-
MDC
PSW
MDH
ZEROS
MDL
ONES
R0
R1
GPRs
R14
R15
CP
WB
Buffer
2-Stage
Prefetch
Pipeline
5-Stage
Pipeline
R0
R1
GPRs
R14
R15
PMU
DMU
DSRAM
EBC
Peripherals
PSRAM
Flash/ROM
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 46 V2.1, 2011-07
With this hardware most XE164 xM instructio ns are executed in a single ma chine cycle
of 12.5 ns with an 80-MHz CPU clock. For example, shift and rotate instructions are
always processed during one machine cycle, no matter how many bits ar e shifted. Also,
multiplication and most MAC instructions execute in one cycle. All multiple-cycle
instructions have been optimized so that they can be executed very fast; for example, a
32-/16-bit division i s started within 4 cycles while the remaining cycles are executed in
the background. Another pipel ine optimization, the branch target prediction, eliminates
the execution time of branch instructions if the prediction was correct.
The CPU has a register conte xt consisting of up to three register b anks with 16 word-
wide GPRs each at its disposal. One of these register banks is physically allocated within
the on-chip DPRAM area. A Context Pointer (CP) register determines the base address
of the active register bank accessed by the CPU at any time. The number of these
register bank copies is only restricted by the available internal RAM space. For easy
parameter passing, a register bank may overlap others.
A system stack of up to 32 Kwords is provided for storage of temporary data. The system
stack can be allocated to any location within the address space (preferably in the on-chip
RAM area); it is accessed by the CPU with the stack pointer (SP) register. Two separate
SFRs, STKOV and STKUN, are implicitly compared with the stack pointer value during
each stack access to detect stack overflow or underflow.
The high performance of the CPU hardware im plementation can be be st utilize d by the
programmer with the highly efficient XE164xM instruction set. This includes the following
instruction classes:
Standard Arithmetic Instructions
DSP-Oriented Arithmetic Instructions
Logical Instructions
Boolean Bit Manipulation Instructions
Compare and Loop Control Instructions
Shift and Rotate Instructions
Prioritize Instruction
Data Movement Instructions
System Stack Instructions
Jump and Call Instructions
Return Instructions
System Control Instructions
Miscellaneous Instructions
The basic instruction length is either 2 or 4 bytes. Possible operand types are bits, bytes
and words. A variety of direct, indirect or immediate ad dressing modes are provided to
specify the required operands.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 47 V2.1, 2011-07
3.4 Memory Protection Unit (MPU)
The XE164xM’s Memory Protection Unit (MPU) protects user-specified memory areas
from unauthorized read, write, or instruction fe tch accesses. The MPU can protect the
whole address space including the peripheral area. This completes establisched
mechanisms such as the register security mechanism or stack overrun/underrun
detection.
Four Protection Levels support flexible system programming where operating system,
low level drivers, and applications run on separate levels. Each protection level permits
different access restrictions for instructions and/or data.
Every access is checked (if the MPU is enabled) and an access violating the permission
rules will be marked as invalid and leads to a protection trap.
A set of protection registers for each protection level sp ecifies the address ranges and
the access permissions. Applications requiring more than 4 protection levels can
dynamically re-pro gra m th e pr otection register s.
3.5 Memory Checker Module (MCHK)
The XE164xM’s Memory Checker Module calculates a checksum (fractional polynomial
division) on a block of data, often called Cyclic Redundancy Code (CRC). It is based on
a 32-bit linear feedback shift register and may, therefore, also be used to generate
pseudo-random numbers.
The Memory Checker Module is a 16-bit parallel input signature compression circuitry
which enables error detection within a block of data stored in memory, registers, or
communicated e.g. via serial communication lines. It reduces the probability of error
masking due to repeated error patterns by calculating the signature of blocks of data.
The polynomial used for operation is configurable, so most of the commonly used
polynomials may be used. Also, the block size for generating a CRC result is
configurable via a local counter. An interrupt may be generated if testing the current data
block reveals an error.
An autonomous CRC compare circuitry is included to enable redundant error detection,
e.g. to enable higher safety integrity levels.
The Memory Checker Module provides enhanced fault detection (beyond parity or ECC)
for data and instructions in volatile and non volatile memories. This is especially
important for the safety and reliability of embedded systems.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 48 V2.1, 2011-07
3.6 Interrupt System
The architecture of the XE164xM supports several mechanisms for fast and flexible
response to service requests; these can be generated from various sources internal or
external to the microcontroll er. Any of these interrupt requests can be programmed to be
serviced by the Interrupt Controller or by the Peripheral Event Controller (PEC).
Where in a standard interrupt servi ce the current program execution is susp ended and
a branch to the interrupt vector table is performed, just one cycle is ‘stolen’ from the
current CPU activity to perform a PEC servic e. A PEC service implies a single byte or
word data transfer between any two memory locations with an additional increment of
either the PEC source pointer, the destination pointer, or both. An individual PEC
transfer counter is implicitly decremented for each PEC service except when performing
in the continuous transfer mode. When this counter reaches zero, a standard interrupt is
performed to the corresponding source-related vector location. PEC services are
particularly well suited to supporting the transmission or reception of blocks of data. The
XE164xM has eight PEC channels, each whith fast interrupt-driven data transfer
capabilities.
With a minimum i nterrupt response time of 7/11 1) CPU clocks, the XE164xM can react
quickly to the occurrence of non-deterministic events.
Interrupt Nodes and Source Selection
The interrupt system provides 96 physical nodes with separate control register
containing an interrupt reque st flag, an interrupt enable flag and a n interrupt priority bit
field. Most interrupt sources are assigned to a dedicated node. A particular subset of
interrupt sources shares a set of nodes. The source selection can be programmed using
the interrupt source selection (ISSR) registers.
External Request Unit (ERU)
A dedicated External Request Unit (ERU) is provided to route and preprocess selected
on-chip peripheral and external interrupt requests. The ERU features 4 programmable
input channels with event trigger l ogic (ETL) a routing matrix and 4 output ga ting units
(OGU). The ETL features rising ed ge, falling edg e, or both ed ges event detectio n. The
OGU combines the detected interrupt events and provides filtering capabilities
depending on a programmable pattern match or miss.
Trap Processing
The XE164xM provides efficient mechanisms to identify and process exceptions or error
conditions that arise during run-time, the so-called ‘Hardware Traps’. A hardware trap
causes an immediate system reaction similar to a standard interrupt service (branching
1) Depending if the jump cache is used or not.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 49 V2.1, 2011-07
to a dedicated vector table location). The occurrence of a hardware trap is also indicated
by a single bit in th e trap flag register (TFR ). Unl ess anoth er hig her-prior ity trap se rvice
is in progress, a hardware trap will interrupt any ongoing program execution. In turn,
hardware trap services can normally not be interrupted by standard or PEC interrupts.
Depending on the package option up to 3 External Service Request (ESR) pins are
provided. The ESR unit processes their input values and allows to implement user
controlled trap functions (System Requests SR0 and SR1). In this way reset, wakeup
and power control can be efficiently realized.
Software interrupts are supported by the ‘TRAP’ instruction in combination with an
individual trap (interrupt) number. Alternatively to emulate an interrupt by software a
program can trigger interrupt requests by writing the Interrupt Request (IR) bit of an
interrupt control register.
3.7 On-Chip Debug Support (OCDS)
The On-Chip Debug Sup port system built into the XE164xM provides a broad range of
debug and emulation features. User software running on the XE164xM can be debugged
within the target system environment.
The OCDS is controlled by an external debugging device via the debug interface. T his
either consists of the 2-pin Device Access Port (DAP) or of the JTAG port conforming to
IEEE-1149. The debug interface can be completed with an optional break interface.
The debugger controls the OCDS with a set of dedicated registers accessible via the
debug interface (DAP or JTAG). In addi tion the OCDS system can be controlled b y the
CPU, e.g. by a monitor program. An injection interface a llows the execution of OCDS-
generated instructions by the CPU.
Multiple breakpoints can be triggered by on-chip hardware, by software, or by an
external trigger input. Single stepping is supported, as is the injection of arbitrary
instructions and read/write access to the complete internal address space. A breakpoint
trigger can be answered with a CPU halt, a monitor call, a data transfer, or/and the
activation of an external signal.
Tracing data ca n be obtained via the debu g interface, or via the external bus interface
for increased performance.
Tracing of program execution is supported by the XE166 Family emulation device.
The DAP interface uses two interface signals, the JTAG interface uses four interface
signals, to communicate with external circuitry. The debug interface can be amended
with two optional break lines.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 50 V2.1, 2011-07
3.8 Capture/Compare Unit (CAPCOM2)
The CAPCOM2 unit supports generation and control of timing sequences on up to
16 channels with a maximum resolution of one system clock cycle (eight cycles in
staggered mode). The CAPCOM2 unit is typical ly used to handle high-speed I/O tasks
such as pulse and waveform generation, pulse width modulation (PWM), digital to
analog (D/A) conversion, software timing, or time recording with respect to external
events.
Two 16-bit timers (T7/T8) with reload reg ister s provide two indepe ndent ti me bases for
the capture/compare register array.
The input clock for the timers is programmable to several prescaled values of the internal
system clock, or may be derived from an overflow/underflow of timer T6 in module GPT2.
This provides a wide range or variation for the timer period and resolution and allows
precise adjustments to the application-specific requirements. In addition, an external
count input allows event scheduling for the capture/compare registers relative to external
events.
The capture/compare register array contains 16 dual purpose capture/compare
registers, each of which may be individually allocated to either CAPCOM timer and
programmed for capture or compare function.
All registers have each one port pin associated with it which serves as an input pin for
triggering the capture function, or as an output pin to indicate the occurrence of a
compare event.
When a capture/compare register has been selected for capture mode, the current
contents of the allocated timer will be latched (‘captured’) into the capture/compare
register in response to an external event at the port pin which is associated with this
register. In addition, a specific interrupt request for this capture/compare register is
generated. Either a positive, a negative, or both a positive and a negative external signal
transition at the pin can be selected as the triggering event.
The contents of all registers which have been selected for one of the five compare modes
are continuously compared with the contents of the allocated timers.
When a match occurs between the timer value and the value in a capture/compare
register, specific actions will be taken based on the selected compare mode.
Table 8 Compare Modes
Compare Modes Function
Mode 0 Interrupt-only compare mode;
Several compare interrupts per timer period are possib le
Mode 1 Pin toggles on each compare match;
Several compare events per timer period are possible
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 51 V2.1, 2011-07
Mode 2 Interrupt-only compare mode;
Only one compare interrupt per timer period is generated
Mode 3 Pin set ‘1’ on match; pin reset ‘0’ on compare timer overflow;
Only one compare event per timer period is generated
Double Register
Mode Two registers operate on one pin;
Pin toggles on each compare match;
Several compare events per timer period are possible
Single Event Mode Generates single edges or pulses;
Can be used with any compare mode
Table 8 Compare Modes (cont’d)
Compare Modes Function
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 52 V2.1, 2011-07
Figure 6 CAPCOM2 Unit Block Diagram
Sixteen
16-bit
Capture/
Compare
Registers
Mode
Control
(Capture
or
Compare)
T7
Input
Control
T8
Input
Control
MC_CAPCOM2_BLOCKDIAG
CC16IRQ
CC31IRQ
CC17IRQ
T7IRQ
T8IRQ
CC16IO
CC17IO
T7IN
T6OUF
f
CC
T6OUF
f
CC
Reload Reg.
T7REL
Timer T7
Timer T8
Reload Reg.
T8REL
CC31IO
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 53 V2.1, 2011-07
3.9 Capture/Compare Units CCU6x
The XE164xM types feature the CCU60, CCU61, CCU62 unit(s).
The CCU6 is a high-resolution capture and compare unit with application-specific
modes. It provides inputs to start the timers synchronously, an important feature in
devices with several CCU6 modules.
The module provides two independent timers (T12, T13), that can be used for PWM
generation, especially for AC motor control. Additionally, special control modes for block
commutation and multi-phase machines are sup ported.
Timer 12 Features
Three capture/compare channels, where each channel can be used either as a
capture or as a compare channel.
Supports generation of a three-phase PW M (six outputs, indivi dual signa ls for high-
side and low-side switches)
16-bit resolution, maximum count frequency = peripheral clock
Dead-time control for each channel to avoid short circuits in the power stage
Concurrent update of the required T12/13 registers
Center-aligned and edge-align ed PWM can be generated
Single-shot mode supported
Many interrupt request sources
Hysteresis-like control mode
Automatic start on a HW event (T12HR, for synchronization purposes)
Timer 13 Features
One independent compare channel with one output
16-bit resolution, maximum count frequency = peripheral clock
Can be synchronized to T12
Interrupt generation at period match and compare match
Single-shot mode supported
Automatic start on a HW event (T13HR, for synchronization purposes)
Additional Features
Block commutation for brushless DC drives implemented
Position detection via Hall sensor patte rn
Automatic rotational speed measurement for block commutation
Integrated error handling
Fast emergency stop without CPU load via external signal (CTRAP)
Control modes for multi-channel AC drives
Output levels can be selected and adapted to the power stage
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 54 V2.1, 2011-07
Figure 7 CCU6 Block Diagram
Timer T12 can work in capture and/or compare mode for its three channels. The modes
can also be combined . Timer T13 can work in compare mode only. Th e multi-channel
control unit generates output patte rns that can be modulated by timer T12 and/or timer
T13. The modulation sources can be selected and combined for signal modulation.
mc_ccu6_blockdiagram.vsd
C hannel 0
C hannel 1
C hannel 2
T12 Dead-
time
Control
Input / Output Control
CC62
COUT62
CC61
COUT61
CC60
COUT60
COUT63
CTRAP
C hannel 3T13
CCPOS0
1
1
1
2221
start
compare
capt ur e
3
Multi-
channel
Control
Trap
Control
compare
compare
compare
compare
1
trap input
CCPOS1
CCPOS2
out put select
out put select
3
Hall inp ut
CCU6 Module Kernel
fSYS
Interrupts
TxHR
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 55 V2.1, 2011-07
3.10 General Purpose Timer (GPT12E) Unit
The GPT12E unit is a very flexible multif unctional timer/counter structu re which ca n be
used for many different timing tasks such as event timing and counting, pulse width and
duty cycle measurements, pulse generatio n, or pulse multiplication.
The GPT12E unit incorporates five 16-bit timers organized in two separate modules,
GPT1 and GPT2. Each timer in each module may either operate independently in a
number of different modes or be concatenated with another timer of the same module.
Each of the three timers T2, T3, T4 of module GPT1 can be configured individually for
one of four basic modes of operation: Timer, Gated Timer, Counter, and Incremental
Interface Mode. In Timer Mode, the input clock for a timer is derived from the system
clock and divided by a programmab le prescale r. C ounter Mo de a llows timer clocki ng i n
reference to external events.
Pulse width or duty cycle measurement is supported in Gated Timer Mode, where the
operation of a timer is control led by the ‘gate’ level on an e xternal input pin. Fo r these
purposes each timer has one associated port pin (TxIN) which serves as a gate or clock
input. The maximum resolution of the timers in module GPT1 is 4 system clock cycles.
The counting direction (up/down) for each timer can be programmed by software or
altered dynamically by an external signal on a port pin (TxEUD), e.g. to facilitate position
tracking.
In Incremental Interface Mode the GPT1 timers can be directly connected to the
incremental position sensor signals A and B through their respective inputs TxIN and
TxEUD. Direction and counting signals are internally derived from these two input
signals, so that the contents of the respective timer Tx corresponds to the sensor
position. The third position sensor signal T OP0 can be connected to an interrupt input.
Timer T3 has an output toggle latch (T3OTL) which changes its state on each timer
overflow/underflow. The state of this latch may be output on pin T3OUT e.g. for time out
monitoring of external hardware components. It may also be used internally to clock
timers T2 and T4 for measuring long time periods with high resolution.
In addition to the basic operating modes, T2 and T4 may be configured as reload or
capture register for timer T3. A timer used as capture or reload register is stopped. Th e
contents of timer T3 is captured into T2 or T 4 in response to a sign al at the associated
input pin (TxIN). Timer T3 is re loaded with th e contents of T2 or T4, trigge red either by
an external signal or a selectab le state transition of its toggle latch T3OTL. When both
T2 and T4 are configured to alternately reload T3 on opposite state transitions of T3OTL
with the low and high times of a PWM signal, this signal can be con tinuously generated
without software intervention.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 56 V2.1, 2011-07
Figure 8 Block Diagram of GPT1
MC_GPT_BLOCK1
Aux. Timer T2
2
n
:1
T2
Mode
Control
Capture
U/D
Basic Clock
f
GPT
T3CON.BPS1
T3OTL T3OUT
Toggle
Latch
T2IN
T2EUD Reload
Core Timer T3
T3
Mode
Control
T3IN
T3EUD U/D
Interrupt
Request
(T3IRQ)
T4
Mode
Control
U/D
Aux. Timer T4
T4EUD
T4IN Reload
Capture
Interrupt
Request
(T4IRQ)
Interrupt
Request
(T2IRQ)
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 57 V2.1, 2011-07
With its maximum resolution of 2 system clock cycles, the GPT2 module provides
precise event control and time measurement. It includes two timers (T5, T6) and a
capture/reload register (CAPREL). Both timers can be clocked with an input clock which
is derived from the CPU clock via a programmable prescaler or with external signals. The
counting direction (up/dow n) for each timer can be programmed by software or altered
dynamically with an external signal on a port pin (TxEUD1)). Concatenation of the timers
is supported with the output toggle latch (T6OTL) of timer T6, which changes its state on
each timer overflow/underflow.
The state of this latch may be used to clock timer T5, and/or it may be output on pin
T6OUT. The overflows/underflows of timer T6 can also be used to clock the CAPCOM2
timers and to initiate a reload from the CAPREL register.
The CAPREL register can capture the contents of timer T5 based on an external signal
transition on the corresponding port pin (CAPIN); timer T5 may optionally be cleared
after the capture procedure. This allows the XE164xM to measure absolute time
differences or to perform pulse multiplication without software overhead.
The capture trigger (timer T5 to CAPREL) can also be generated upon transitions of
GPT1 timer T3 inputs T3IN and/or T3EUD. This is especially advantageous when T3
operates in Incremental Interface Mode.
1) Exception: T5EUD is not connected to a pin.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 58 V2.1, 2011-07
Figure 9 Block Diagram of GPT2
MC_GPT_BLOCK2
GPT2 Timer T5
2
n
:1
T5
Mode
Control
GPT2 CAPREL
T3IN/
T3EUD
CAPREL
Mode
Control
T6
Mode
Control
Reload
Clear
U/D
Capture
Clear
U/D
T5IN
CAPIN
Interrupt
Request
(T5IRQ)
Interrupt
Request
(T6IRQ)
Interrupt
Request
(CRIRQ)
Basic Clock
f
GPT
T6CON.BPS2
T6IN
GPT2 Timer T6 T6OTL T6OUT
T6OUF
Toggle
FF
T6EUD
T5EUD
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 59 V2.1, 2011-07
3.11 Real Time Clock
The Real Time Clock (RTC) module of the XE164xM can be clocked with a clock signal
selected from internal sources or external sources (pins).
The RTC basically consists of a chain of divider blocks:
Selectable 32:1 and 8:1 dividers (on - off)
The reloadable 16-bit timer T14
The 32-bit RTC timer block (accessible via registers RTCH and RTCL) consisting of:
a reloadable 10-bit timer
a reloadable 6-bit timer
a reloadable 6-bit timer
a reloadable 10-bit timer
All timers count up. Each timer can generate an interrupt request. All requests are
combined to a common node request.
Figure 10 RTC Block Diagram
Note: The registers associated with the RTC are only affected by a power reset.
CNT-Register
REL-Register
10 Bits6 Bits6 Bits10 Bi tsT14
MCB05568B
T14-Register
Interrupt Sub Node RTCINT
MUX
32
PRE
RUN
CNT
INT3
CNT
INT2
CNT
INT1
CNT
INT0
f
CNT
f
RTC
T14REL 10 Bits6 Bi ts6 Bi ts10 Bi ts
:
MUX
8:
REFCLK
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 60 V2.1, 2011-07
The RTC module can be used fo r different purposes:
System clock to determine the current time and date
Cyclic time-based interrupt, to provide a system time tick independent of CPU
frequency and other resources
48-bit timer for long-term measurements
Alarm interrupt at a defined time
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 61 V2.1, 2011-07
3.12 A/D Converters
For analog signal measurement, up to two 10-bit A/D converters (ADC0, ADC1) with
11 + 5 multi plexed input channels and a sample and hold circuit have been integrate d
on-chip. 4 inputs can be converted by both A/D converters. Conversions use the
successive approximation method. The sampl e time (to ch arge the capacitors) and th e
conversion time are programmable so that they can be ad justed to the external circuit.
The A/D converters can also operate in 8-bit conversion mode, further reducing the
conversion time.
Several independent conversion result registers, selectable interrupt requests, and
highly flexible conversion sequence s provid e a high deg ree of programmabi lity to meet
the application requirements. Both modules can be synchronized to allow parallel
sampling of two input channels.
For applications that require more analog input channels, external analog multiplexers
can be controlled automatically. For applications that require fewer analog input
channels, the remaini ng channel inputs can be used as digital input port pins.
The A/D converters of the XE164xM support two types of request sources which can be
triggered by several intern al and external events.
Parallel requests are acti vated at the same time and then exe cuted in a predefined
sequence.
Queued requests are executed in a user-defined sequence.
In addition, the conversion of a specific channel can be inserted into a running sequence
without disturbing that sequence. All requests are arbitrated according to the priority
level assigned to them.
Data reduction features reduce the number of required CPU access operations allowing
the precise evaluation of analog inputs (high conversion rate) even at a low CPU speed.
Result data can be reduce d by limit checking or accumulation of results.
The Peripheral Event Controlle r (PEC) can be used to control the A/D con verters or to
automatically store conversion results to a table in memory for later evalua tion, without
requiring the overhead of entering and exiting interrupt routines for ea ch data transfer.
Each A/D converter contains eight result registers which can be concatenated to build a
result FIFO. Wait-for-read mode can be enabled for each result register to prevent the
loss of conversion data.
In order to decouple analog inputs from digital noise and to avoid input trigger noise,
those pins used for analog input can be disconnected from the digital input stages. This
can be selected for each pin separately with the Port x Digital Input Disable registers.
The Auto-Power-Down feature of the A/D converters minimizes the power consumption
when no conversion is in progress.
Broken wire detection for each channel and a multiplexer test mode provide information
to verify the proper operation of the analog signal sources (e.g. a sensor system).
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 62 V2.1, 2011-07
3.13 Universal Serial Interface Channel Modules (USIC)
The XE164xM features the USIC modules USIC0, USIC1, USIC2. Each module
provides two serial communicati on channels.
The Universal Serial Interface Ch annel (USI C) module is based on a g eneric data shift
and data storage structure which is identical for all supported serial communication
protocols. Each channel supports complete full-duplex operation with a basic data buffer
structure (one transmit buffer and two receive buffer stages). In addition, the data
handling software can use FIFOs.
The protocol part (generation of shift clock/data/control signals) is independent of the
general part and is handled by protocol-specific preprocessors (PPPs).
The USIC’s input/output lines are connected to pins by a pin routing unit. The inputs and
outputs of each USIC channel can be assigned to different interface pins, providing great
flexibility to the application software. All assignments can be made during run time.
Figure 11 General Structure of a USIC Module
The regular structure of the USIC module brings the following advantag es:
Higher flexibility through configuration with same look-and-feel for data management
Reduced complexity for low-level dr ivers serving different protocols
Wide range of protocols with improved performances (baud rate, buffer handling)
USIC_basic.vsd
Bus In terface
DBU
0
DBU
1
Control 0
Control 1
DSU
0
DSU
1
PPP_A
PPP_B
PPP_C
PPP_D
PPP_A
PPP_B
PPP_C
PPP_D
Pin Routing Shell
Buffer & Sh ift Structure Proto col Prepro cessors Pin sBus
fsys Fractional
Dividers Ba u d rate
Generators
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 63 V2.1, 2011-07
Target Protocols
Each USIC channel can rece ive and transmit data frames with a selectable data wo rd
width from 1 to 16 bits in each of the following protocols:
UART (asynchronous serial channel)
module capability: maximum baud rate = fSYS / 4
data frame length programmable from 1 to 63 bits
MSB or LSB first
LIN Support (Local Interconnect Network)
module capability: maximum baud rate = fSYS / 16
checksum generation under software control
baud rate detection possible by buil t-in capture event of baud rate generator
SSC/SPI (synchronous serial channel with or without data buffer)
module capability: maximum baud rate = fSYS / 2, limited by loop delay
number of data bits programmable from 1 to 63, more with explicit stop condition
MSB or LSB first
optional control of slave select signals
IIC (Inter-IC Bus)
supports baud rates of 100 kbit/s and 400 kbit/s
IIS (Inter-IC Sound Bus)
module capability: maximum baud rate = fSYS / 2
Note: Depending on the selected functions (such as digital filters, input synchronization
stages, sample point adjustment, etc.), the maximum achievable baud rate can be
limited. Please note that there may be additional delays, such as internal or
external propagation delays and driver delays (e.g. for collision detection in UART
mode, for IIC, etc.).
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 64 V2.1, 2011-07
3.14 MultiCAN Module
The MultiCAN module contains independently operating CAN nodes with Full-CAN
functionality which are able to exchange Data and Remote Frames using a gateway
function. Transmission and reception of CAN frames is handled in accordance with CAN
specification V2.0 B (active). Each CAN node can receive and transmit standard frames
with 11-bit identifiers as well as extended frames with 29-bit identifiers.
All CAN nodes share a common set of message objects. Each message object can be
individually allo cated to one of th e CAN nodes. Besid es serving as a storage container
for incoming and outgoing frames, message objects can be combined to build gateways
between the CAN nodes or to set up a FIFO buffer.
Note: The number of CAN nodes and message objects depends on the selected device
type.
The message objects are organized in double-chained linked lists, where each CAN
node has its own list of message objects. A CAN node stores frames only into message
objects that are allocated to its own message object list and it transmits only messages
belonging to this message object list. A powerful, command-driven list controller
performs all message object list operations.
Figure 12 Block Diagram of MultiCAN Module
mc_multican_block.vsd
M ultiCA N M odule K ernel
Interrupt
Control
fCAN
Port
Control
CAN Co ntrol
Message
Object
Buffer
CAN
Node 0
Linked
List
Control
Clock
Control
Address
Decoder
CAN
Node n
TXDCn
RXDCn
TXDC0
RXDC0
...
...
...
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 65 V2.1, 2011-07
MultiCAN Features
CAN functionality conforming to CAN specification V2.0 B active for each CAN node
(compliant to ISO 11898)
Independent CAN nodes
Set of independent message objects (shared by the CAN nodes)
Dedicated control registers for each CAN node
Data transfer rate up to 1 Mbit/s, individually programmable for each node
Flexible and powerful me ssage transfer control and error handling capabiliti es
Full-CAN functionality for message objects:
Can be assigned to one of the CAN nodes
Configurable as transmit or receive objects, or as message buffer FIFO
Handle 11-bit or 29-bit identifiers with programmable acceptance mask for filtering
Remote Monitoring Mode, and frame counter for monitoring
Automatic Gateway Mode support
16 individually programmable interrupt nodes
Analyzer mode for CAN bus monitoring
3.15 Sy st em Time r
The System Timer consists of a progra mmable prescaler and two concatenated timers
(10 bits and 6 bits). Both timers can generate in terrupt requests. Th e clock source can
be selected and the timers can also run during power reduction modes.
Therefore, the System Timer enables the software to maintain the current time for
scheduling functions or for the implem entation of a clock.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 66 V2.1, 2011-07
3.16 Watchdog Timer
The Watchdog Timer is one of the fail-safe mechanisms which have been implemented
to prevent the controller from malfunctioning for longer periods of time.
The Watchdog Timer is a lways enabled after an application reset of the chip. It can be
disabled and enabled at any time by executing the instructions DISWDT and ENWDT
respectively. The software has to service the Watchdog Timer before it overflows. If this
is not the case because of a hardware or software failure, the Watchdog Timer
overflows, generating a prewarning interrupt and then a reset request.
The Watchdog Time r is a 16-bit timer clocked with the system clock divided by 16,384
or 256. The Watchdog Timer register is set to a prespecified reload value (stored in
WDTREL) in order to allo w further variation of the moni tored time interval. Each time it
is serviced by the application software, the Watchdog Timer is reloaded and the
prescaler is cleared.
Time intervals between 3.2 μs and 13.42 s can be monitored (@ 80 MHz).
The default Watchdog Timer interval afte r power-up is 6.5 ms (@ 10 MHz).
3.17 Clock Generation
The Clock Generation Unit can gen erate the system clock signal fSYS for the XE164xM
from a number of external or internal clock sou rce s:
External clock signals with pad voltage or core volta ge levels
External crystal or resonator using the on-chip oscillator
On-chip clock source for operation without crystal/resonator
Wake-up clock (ultra-low-power) to further reduce power consumpti on
The programmable on-chip PLL with multiple prescalers generates a clock signal for
maximum system performance from standard crystals, a clock input signal, or from the
on-chip clock source. See also Section 4.6.2.
The Oscillator Watchdog (OWD) generates an interrupt if the crystal oscillator frequency
falls below a certain limit or stops completely. In this case, the system can be supplied
with an emergency clock to enable operation even after an external clock failure.
All available clock signals can be output on on e of two selectable pins.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 67 V2.1, 2011-07
3.18 Parallel Ports
The XE164xM provides up to 76 I/O lines wh ich are organized in to 7 input/output ports
and 2 input ports. All port lines are bit-addressable, and all input/output lines can be
individually (bit-wise) configured via port control registers. This configuration selects the
direction (input/output), push/pull or open-drain operation, activation of pull devices, and
edge characteristics (shape) and driver characteristics (output current) of the port
drivers. The I/O ports are true bidirectional ports which are switched to high impedance
state when configured as inputs. During the internal reset, all port pins are configured as
inputs without pull devices active.
All port lines have alternate input or output functions associated with them. These
alternate functions can be programmed to be assigned to various port pins to support the
best utilization for a given appli cation. For thi s reason, certain functions app ear several
times in Table 9.
All port lines that are not used for alternate functions may be used as general purpose
I/O lines.
Table 9 Summary of the XE164xM’s Ports
Port Width I/O Connected Modules
P0 8 I/O EBC (A7…A0),
CCU6, USIC, CAN
P1 8 I/O EBC (A15…A8),
CCU6, USIC
P2 14 I/O EBC (READY, BHE, A23…A16, AD15…AD13, D15…D13),
CAN, CC2, GPT12E, USIC, DAP/JTAG
P4 4 I/O EBC (CS3…CS0),
CC2, CAN, GPT12E, USIC
P5 11 I Analog Inputs, CCU6, DAP/JTAG, GPT12E, CAN
P6 3 I/O ADC, CAN, GPT12E
P7 5 I/O CAN, GPT12E, SCU, DAP/JTAG, CCU6, ADC, USIC
P10 16 I/O EBC (ALE, RD, WR, AD12…AD0, D12…D0),
CCU6, USIC, DAP/JTAG, CAN
P15 5 I Analog Inputs, GPT12E
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 68 V2.1, 2011-07
3.19 Instruction Set Summary
Table 10 lists th e instructions of the XE164xM.
The addressing modes that can be used with a specific instructio n, the function of the
instructions, parameters for conditional execution of instructions, and the opcodes for
each instruction can be found in the “Instruction Set Manual”.
This document also provides a detailed description of each instruction.
Table 10 Instruction Set Summary
Mnemonic Description Bytes
ADD(B) Add word (byte) operands 2 / 4
ADDC(B) Add word (byte) operands with Carry 2 / 4
SUB(B) Subtract word (byte) operands 2 / 4
SUBC(B) Subtract word (byte) operands with Carry 2 / 4
MUL(U) (Un)Signed multiply direct GPR by direct GPR
(16- × 16-bit) 2
DIV(U) (Un)Signed divide register MDL by direct GPR (16-/16-bit) 2
DIVL(U) (Un)Signed long divide reg. MD by direct GPR (32-/16-bit) 2
CPL(B) Complement direct word (byte) GPR 2
NEG(B) Negate direct word (byte) GPR 2
AND(B) Bitwise AND, (word/byte operands) 2 / 4
OR(B) Bitwise OR, (word/byte operands) 2 / 4
XOR(B) Bitwise exclusive OR, (word/byte operands) 2 / 4
BCLR/BSET Clear/Set direct bit 2
BMOV(N) Move (negated) direct bit to direct bit 4
BAND/BOR/BXOR AND/OR/XOR direct bit with direct bit 4
BCMP Compare direct bit to direct bi t 4
BFLDH/BFLDL Bitwise modify masked high/low byte of bit-addressable
direct word memory with immediate data 4
CMP(B) Compare word (byte) operands 2 / 4
CMPD1/2 Compare word data to GPR and decrement GPR by 1/2 2 / 4
CMPI1/2 Compare word data to GPR and increment GPR by 1/2 2 / 4
PRIOR Determine number of shift cycles to normalize direct
word GPR and store result in direct word GPR 2
SHL/SHR Shift left/right direct word GPR 2
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 69 V2.1, 2011-07
ROL/ROR Rotate left/right direct word GPR 2
ASHR Arithmetic (sign bit) shift right direct word GPR 2
MOV(B) Move word (byte) data 2 / 4
MOVBS/Z Move byte operand to word op. with sign/zero extension 2 / 4
JMPA/I/R Jump absolute/indirect/relative if condition is met 4
JMPS Jump absolute to a code segment 4
JB(C) Jump relative if direct bit is set (an d clear bit) 4
JNB(S) Jump relative if direct bit is not set (and set bit) 4
CALLA/I/R Call absolute/indirect/relative subroutine if condition is met 4
CALLS Call absolute subroutine in any code segment 4
PCALL Push direct word register onto system stack and call
absolute subroutine 4
TRAP Call interrupt service routine vi a immediate trap number 2
PUSH/POP Push/pop direct word register onto/from system stack 2
SCXT Push direct word register onto system stack and upda te
register with word operand 4
RET(P) Return from intra-segment subroutine
(and pop direct word register from system stack) 2
RETS Return from inter-segment subroutine 2
RETI Return from interrupt service subroutine 2
SBRK Software Break 2
SRST Software Reset 4
IDLE Enter Idle Mode 4
PWRDN Unused instruction1) 4
SRVWDT Service Watchdog Timer 4
DISWDT/ENWDT Disable/Enable Watchdog Timer 4
EINIT End-of-Initialization Regi ster Lock 4
ATOMIC Begin ATOMIC sequence 2
EXTR Begin EXTended Register sequence 2
EXTP(R) Begin EXTended Page (and Register) sequence 2 / 4
EXTS(R) Begin EXTended Segment (and Register) sequence 2 / 4
Table 10 Instruction Set Summary (cont’d)
Mnemonic Description Bytes
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Functional Des cription
Data Sheet 70 V2.1, 2011-07
NOP Null operation 2
CoMUL/CoMAC Multiply (and accumul ate) 4
CoADD/CoSUB Add/Subtract 4
Co(A)SHR (Arithmetic) Shift right 4
CoSHL Shift left 4
CoLOAD/STORE Load accumulator/Store MAC register 4
CoCMP Compare 4
CoMAX/MIN Maximum/Minimum 4
CoABS/CoRND Absolute value/Round accumulator 4
CoMOV Data move 4
CoNEG/NOP Negate accumulator/Null operation 4
1) The Enter Power Down Mode instruction is not used in the XE164xM, due to the enhanced power control
scheme. PWRDN will be correctly decoded, but will trigger no action.
Table 10 Instruction Set Summary (cont’d)
Mnemonic Description Bytes
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 71 V2.1, 2011-07
4 Electrical Parameters
The operating range for the XE164xM is defined by its electrical parameters. For proper
operation the specified limits must be respected when integrating the device in its target
environment.
4.1 General Parameters
These parameters are valid for all subsequent descriptions, unless otherwise noted.
4.1.1 Absolut Maximum Rating Conditions
Stresses above the values listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only. Functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditi ons for
an extended time may affect device reliability.
During absolute maximum rating overload conditions (VIN >VDDP or VIN <VSS) the
voltage on VDDP pins with respect to ground (VSS) must not exceed the values defined by
the absolute maximum ratings.
Table 11 Absolute Maximum Rating Parameters
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Output current on a pin
when high value is driven IOH SR -30 −−mA
Output current on a pin
when low value is driven IOL SR −−30 mA
Overload current IOV SR -10 10 mA 1)
1) Overload condition occu rs if the input volt age VIN is out of the absolute maxi mum rating range. In this case the
current must be limited to the listed values by desi gn measures.
Absolute sum of overload
currents Σ|IOV|
SR −−100 mA 1)
Junction Te mp erature TJ SR -40 150 °C
Storage Temperature TST SR -65 150 °C
Digital supply voltage for
IO pads and voltage
regulators
VDDPA,
VDDPB
SR
-0.5 6.0 V
Voltage on any pin with
respect to ground (Vss) VIN SR -0.5 VDDP
+ 0.5 VVIN VDDP(max)
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 72 V2.1, 2011-07
4.1.2 Operating Conditions
The following operating conditions must not be exceeded to ensure correct operation of
the XE164xM. All parameters specified in the following sections refer to these operating
conditions, unless otherwise noticed.
Note: Typical parameter values refer to room temperature and nominal su pply voltage,
minimum/maximum parameter values also include conditions of
minimum/maximum temperature and minimum/maximum supply voltage.
Additional details are described where applicable.
Table 12 Operating Conditions
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Voltage Regulator Buffer
Capacitanc e fo r DMP_M CEVRM
SR 1.0 4.7 μF1)
Voltage Regulator Buffer
Capacitanc e fo r DMP_1 CEVR1
SR 0.47 2.2 μF1)2)
External Load
Capacitance CL SR 203) pF pin out
driver= default
4)
System frequency fSYS SR −−100 MHz 5)
Overload current for
analog inputs6) IOVA SR -2 5 mA not subject to
production test
Overload current for digital
inputs6) IOVD SR -5 5 mA not subject to
production test
Overload current coupling
factor for analog inputs7) KOVA
CC 2.5 x
10-4 1.5 x
10-3 -IOV <0mA;
not subject to
production test
1.0 x
10-6 1.0 x
10-4 -IOV >0mA;
not subject to
production test
Overload current coupling
factor for digital I/O pins KOVD
CC 1.0 x
10-2 3.0 x
10-2 IOV <0mA;
not subject to
production test
1.0 x
10-4 5.0 x
10-3 IOV >0mA;
not subject to
production test
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 73 V2.1, 2011-07
Absolute sum of overload
currents Σ|IOV|
SR −−50 mA not subject to
production test
Digital core supply voltage
for domain M8) VDDIM
CC 1.5
Digital core supply voltage
for domain 18) VDDI1
CC 1.5
Digital supply voltage for
IO pads and voltage
regulators
VDDP SR 4.5 5.5 V
Digital ground voltage VSS SR 0V
1) To ensure the stability of t he voltage r egulators the EV Rs must be buff ered with ceramic capa citors. Separa te
buffer capacitor s with the recomended values shall be connecte d as close as possible to each VDDIM and VDDI1
pin to keep the resistance of the board tracks below 2 Ohm. Connect all VDDI1 pins together. The minimum
capacitance value is required for proper operation under all conditions (e.g. temperature). Higher values
slightly increase the startu p time.
2) Use one Capacitor for each pin.
3) This is the reference load. For bigger capacitive loads, use the derating factors listed in the PAD properties
section.
4) The timing is valid for pin drivers operating in default current mo de (sel ected aft er reset) . Reducing the outp ut
current may lead to increased delays or reduced driving capability (CL).
5) The operating frequency range may be reduced for specific device types. This is indicated in the device
designation (...FxxL). 80 MHz devices are marked ...F80L.
6) Overload conditions occur if the standard operating conditions are exceeded, i.e. the voltage on any pin
exceeds the specified range: VOV > VIHmax (IOV > 0) or VOV < VILmin ((IOV < 0). The absolute sum of input
overload currents on all pins may not exceed 50 mA. The supply voltages must remain within the specified
limits. Proper operation under overload conditions depends on the application. Overload conditions must not
occur on pin XTAL1 (powered by VDDIM).
7) An overload current (IOV) through a pin injects a certain error current (IINJ) into the adjacent pins. This error
current adds to the respective pins lea kage current (IOZ). The amount of error current depends on the overload
current and is defined by the overlo ad coupl ing facto r KOV. The polarity of the in jected erro r curren t is inverse
compared to the pola rity of the overl oad current that pr oduces it.The t otal current through a pin is | ITOT| = |IOZ|
+ (|IOV| KOV). The additional error current may distort the input voltage on analog inputs.
8) Value is controlled by on-chip regulator
Table 12 Operating Conditions (cont’d)
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 74 V2.1, 2011-07
4.1.3 Pad Timing Definition
If not otherwise noted, all timing parameters are tested and are valid for the
corresponding output pins operating in strong driver, fast edge mode.
See also “Pad Properties” on Page 103.
4.1.4 Parameter Interpretation
The parameters listed in the followi ng include both the chara cteristics of the XE164xM
and its demands on the system. To aid in correctly interpreting the parameters when
evaluating them for a design, they are marked accordingly in the column “Symbol”:
CC (Controller Characteristics):
The logic of the XE164xM provides signals with the specified characteristics.
SR (System Requirement):
The external system must provide signals with the specified characteristics to the
XE164xM.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 75 V2.1, 2011-07
4.2 DC Parameters
These parameters are static or average values th at may be exceeded during switching
transitions (e.g. output current).
Leakage current is strongly dependent on the operating temperature and the voltage
level at the respective pin. The maximum values in the following tables apply under worst
case conditions, i.e. maximum temperature and an input level equal to the supply
voltage.
The value for the leakage current in an application can be determined by using the
respective leakage derating formula (see tables) with values from that application.
The pads of the XE164xM are designed to operate in various driver modes. The DC
parameter specifications refer to the pad current limits specifi ed in Section 4.6.4.
Supply Voltage Restrictions
The XE164xM can operate within a wide supply voltage range from 3.0 V to 5.5 V.
However, during operation this supply voltage must remain within 10 percent of the
selected nominal supply voltage. It cannot vary across the full operating voltage range.
Because of the supply voltage restriction and because electrical behavior depends on
the supply voltage, the parame ters are specified separately for the uppe r and the lower
voltage range.
During operation, the supply voltages may only change with a maximum speed of
dV/dt < 1 V/ms.
During power-on sequences, the supply voltages may only change with a maximum
speed of dV/dt < 5 V/μs, i.e. the target supply voltage may be reached earliest after
approx. 1 μs.
Note: To limit the speed of supply voltage c hanges, the employment of external buffer
capacitors at pins VDDPA/VDDPB is recommended.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 76 V2.1, 2011-07
Pullup/Pulldown Device Behavior
Most pins of the XE164xM feature pullup or pulldown devices. For some special pins
these are fixed; for the port pins they can be selected by the application.
The specified curre nt values indicate how to load the respective pin dependin g on the
intended signal level. Figure 13 shows the current paths.
The shaded resistors shown in the figure may be required to compensate system pull
currents that do not match the given limit values.
Figure 13 Pullup/Pulldown Current Definition
MC_XC2X_PULL
VDDP
VSS
Pullup
Pulldown
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 77 V2.1, 2011-07
4.2.1 DC Parameters
Keeping signal levels within the limits specified in this table ensures operation without
overload conditions. For signal levels outside these specifications, also refer to the
specification of the overload current IOV.
Note: Operating Conditions apply.
Table 13 is valid un der the following conditions:
VDDP 4.5 V; VDDPtyp = 5V; VDDP 5.5 V
Table 13 DC Characteristics for Upper Voltage Range
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Pin capacitance (digital
inputs/outputs). To be
doubled for double bond
pins.1)
CIO CC −−10 pF not subject to
production test
Input Hysteresis2) HYS CC 0.11 x
VDDP
−−VRS =0Ohm
Absolute input leakage
current on pins of analog
ports3)
|IOZ1|
CC 10 200 nA VIN >0V;
VIN < VDDP
Absolute input leakage
current for all other pins.
To be doubled for double
bond pins.3)1)4)
|IOZ2|
CC 0.2 5 μATJ 110 °C;
VIN < VDDP;
VIN > VSS
0.2 15 μATJ150 °C;
VIN < VDDP;
VIN > VSS
Pull Level Force Current5) |IPLF| SR 250 −−μA6)
Pull Level Keep Current7) |IPLK|
SR −−30 μA6)
Input high voltage
(all except XTAL1) VIH SR 0.7 x
VDDP
VDDP
+ 0.3 V
Input low voltage
(all except XTAL1) VIL SR -0.3 0.3 x
VDDP
V
Output High voltage8) VOH CC VDDP
- 1.0 −−VIOH IOHmax
VDDP
- 0.4 −−VIOH IOHnom9)
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 78 V2.1, 2011-07
Output Low Voltage8) VOL CC −−1.0 V IOL IOLmax
−−0.4 V IOL IOLnom9)
1) Because each double bond pin is conne ct ed to two p ads (st anda rd pad and high -speed pad) , i t has twice t he
normal value. For a list of affected pins refer to the pin definitions table in chapter 2.
2) Not subject to production test - verified by design/characterization. Hysteresis is implemented to avoid
metastable states and switching due to internal ground bounce. It cannot suppress switching due to external
system noise under all conditions.
3) If the input voltage exceeds the respecti ve supply vo ltage due to ground bouncing ( VIN < VSS) or supp ly ri pple
(VIN > VDDP), a certain amount of current may flow through the protection diodes. This current adds to the
leakage current. An additional erro r current (IINJ) will flow if an overload curre nt flows through an adjacent pin.
Please refer to the defini tion of the overload coupling factor KOV.
4) The given values are worst -case val ues. In production test , this leakage current i s only tested at 125 °C; ot her
values are ensured by correlation. For derating, please refer to the following descriptions: Leakage derating
depending on temperature (TJ = junction temperature [°C]): IOZ = 0.05 x e(1.5 + 0.028 x TJ>) [μA]. For example, at
a temperature of 95 °C the resulting leakage current is 3.2 μA. Leakage derating depending on voltage level
(DV = VDDP - VPIN [V]): IOZ = IOZtempmax - (1.6 x DV) (μA]. This voltage derating formula is an approximation
which applies for maximum temperature.
5) Drive the indicated minimum current throug h this pin to change the default pin leve l driven by the enable d pull
device: VPIN VILmax for a pullup; VPIN VIHmin for a pulldown.
6) These values apply to the fixed pull-devices in dedicated pins and to the user-selectable pull-devices in
general purpose IO pins.
7) Limit the current through this pin to the indicated value so that the enabled pull device can keep the default
pin level: VPIN VIHmin for a pullup; VPIN VILmax for a pulldown.
8) The maximum deliverable output current of a port driver depends on the selected output driver mode. This
specification is not valid for outputs which are switched to open drain mode. In this case the respective output
will float and the voltage is determined by the external circuit.
9) As a rule, with decreasing output current the output levels approach the respective supply level (VOL->VSS,
VOH->VDDP). However, only the levels for nominal output currents are verified.
Table 13 DC Characteristics for Upper Voltage Range (cont’d)
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 79 V2.1, 2011-07
4.2.2 DC Param e te rs fo r L ow er Voltage Area
Keeping signal levels within the limits specified in this table ensures operation without
overload conditions. For signal levels outside these specifications, also refer to the
specification of the overload current IOV.
Note: Operating Conditions apply.
Table 14 is valid un der the following conditions:
VDDP 3.0 V; VDDPtyp = 3.3 V; VDDP 4.5 V
Table 14 DC Characteristics for Lower Voltage Range
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Pin capacitance (digital
inputs/outputs). To be
doubled for double bond
pins.1)
CIO CC −−10 pF not subject to
production test
Input Hysteresis2) HYS CC 0.07 x
VDDP
−−VRS =0Ohm
Absolute input leakage
current on pins of analog
ports3)
|IOZ1|
CC 10 200 nA VIN > VSS;
VIN < VDDP
Absolute input leakage
current for all other pins.
To be doubled for double
bond pins.3)1)4)
|IOZ2|
CC 0.2 2.5 μATJ 110 °C;
VIN < VDDP;
VIN > VSS
0.2 8 μATJ 150 °C;
VIN < VDDP;
VIN > VSS
Pull Level Force Current5) |IPLF| SR 150 −− 6)
Pull Level Keep Current7) |IPLK|
SR −−10 μA6)
Input high voltage
(all except XTAL1) VIH SR 0.7 x
VDDP
VDDP
+ 0.3 V
Input low voltage
(all except XTAL1) VIL SR -0.3 0.3 x
VDDP
V
Output High voltage8) VOH CC VDDP
- 1.0 −−VIOH IOHmax
VDDP
- 0.4 −−VIOH IOHnom9)
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 80 V2.1, 2011-07
Output Low Voltage8) VOL CC −−1.0 V IOL IOLmax
−−0.4 V IOL IOLnom10)
1) Because each double bond pin is conne ct ed to two p ads (st anda rd pad and high -speed pad) , i t has twice t he
normal value. For a list of affected pins refer to the pin definitions table in chapter 2.
2) Not subject to production test - verified by design/characterization. Hysteresis is implemented to avoid
metastable states and switching due to internal ground bounce. It cannot suppress switching due to external
system noise under all conditions.
3) If the input voltage exceeds the respecti ve supply vo ltage due to ground bouncing ( VIN < VSS) or supp ly ri pple
(VIN > VDDP), a certain amount of current may flow through the protection diodes. This current adds to the
leakage current. An additional erro r current (IINJ) will flow if an overload curre nt flows through an adjacent pin.
Please refer to the defini tion of the overload coupling factor KOV.
4) The given values are worst -case val ues. In production test , this leakage current i s only tested at 125 °C; ot her
values are ensured by correlation. For derating, please refer to the following descriptions: Leakage derating
depending on temperature (TJ = junction temperature [°C]): IOZ = 0.05 x e(1.5 + 0.028 x TJ>) [μA]. For example, at
a temperature of 95 °C the resulting leakage current is 3.2 μA. Leakage derating depending on voltage level
(DV = VDDP - VPIN [V]): IOZ = IOZtempmax - (1.6 x DV) (μA]. This voltage derating formula is an approximation
which applies for maximum temperature.
5) Drive the indicated minimum current throug h this pin to change the default pin leve l driven by the enable d pull
device: VPIN <= VIL for a pullup; VPIN >= VIH for a pul ldown.
6) These values apply to the fixed pull-devices in dedicated pins and to the user-selectable pull-devices in
general purpose IO pins.
7) Limit the current through this pin to the indicated value so that the enabled pull device can keep the default
pin level: VPIN >= VIH for a pullup; VPIN <= VIL for a pulldown.
8) The maximum deliverable output current of a port driver depends on the selected output driver mode. This
specification is not valid for outputs which are switched to open drain mode. In this case the respective output
will float and the voltage is determined by the external circuit.
9) As a rule, with decreasing output current the output levels approach the respective supply level (VOL->VSS,
VOH->VDDP). However, only the levels for nominal output currents are verified.
10)As a rule, with decreasing output current the output levels approach the respective supply level (VOL->VSS,
VOH->VDDP). However, only the levels for nominal output currents are verified.
Table 14 DC Characteristics for Lower Voltage Range (cont’d)
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 81 V2.1, 2011-07
4.2.3 Power Consumption
The power consumed by the XE164xM depends on several factors such as supply
voltage, operating frequency, active circuits, and operating temperature. The power
consumption specified here consists of two components:
The switching current IS depends on the device ac tivity
The leakage current ILK depends on the device temperature
To determine the actual power consumption, always both components, switching current
IS and leakage current ILK must be added:
IDDP = IS + ILK.
Note: The power consumption values are not subject to production test. They are
verified by design/characterization.
To determine the total power consumption for dimensioning the external power
supply, also the pad driver currents must be con sidered.
The given power consumption parameters and their values refer to specific operating
conditions:
Active mode:
Regular operation, i.e. periphe rals are active, code executio n out of Flash.
Stopover mode:
Crystal oscillator and PLL stopped, Flash switched off, clock in domain DMP_1
stopped.
Note: The maximum values cover the complete specified operating range of all
manufactured devices.
The typical values refer to average devices under typical conditions, such as
nominal supply voltage, room temperature, application-oriented activity.
After a power reset, the decoupling capacitors for VDDIM and VDDI1 are charged with
the maximum possible current.
For additional information, please refer to Section 5.2, Thermal Considerations.
Note: Operating Conditions apply.
Table 15 Switching Power Consumption
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Power supply current
(active) with all peripherals
active and EVVRs on
ISACT
CC 10 +
0.6 x
fSYS1)
1) fSYS in MHz.
10 +
1.0 x
fSYS1)
mA 2)3)
Power supply current in
stopover mode, EVVRs on ISSO CC 0.7 2.0 mA
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 82 V2.1, 2011-07
Active Mode Power Supply Current
The actual power supply current in active mode not only depends on the system
frequency but also on the configuration of the XE164xM’s subsystem.
Besides the power consumed by the device logic the power supply pins also provide the
current that flows through the pin outp ut drive r s.
A small current is consumed because the drivers’ input stages are switched.
The IO power domains can be supplied separately. Power domain A (VDDPA) supplies the
A/D converters and Port 6. Power domain B (VDDPB) supplies the on-chip EVVRs and all
other ports.
During operation domain A draws a maximum current of 1.5 mA for each active A/D
converter module from VDDPA.
In Fast Startup Mode (with the Flash modules deactivated), the typical current is reduced
to (3 + 0.6×fSYS) mA.
2) The pad supply voltage pins (VDDPB) provide the input current for the on-chip EVVRs and the current
consumed by the pin output drivers. A small current is consumed because the drivers input stages are
switched.
In Fast Startup Mode (with th e Flash modules deactivated), the typical current is reduced to 3 + 0.6 x fSYS.
3) Please consider the additional conditions described in section "Active Mode Power Supply Current".
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 83 V2.1, 2011-07
Figure 14 Supply Current in Active Mode as a Function of Fr eq ue n cy
Note: Operating Conditions apply.
MC_XC2XM_IS
fSYS [MHz]
IS[mA]
10
20
40
20 40 80
60
50
60
70
90
100
ISACTtyp
ISACTmax
30
80
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 84 V2.1, 2011-07
Note: A fraction of the leakage curre nt flows through domain DMP_A (pin VDDPA). This
current can be calculated as 7 000
×
e-
α
, with
α
= 5 000 / (273 + 1.3
×
TJ).
For TJ = 150°C, this results in a current of 160
μ
A.
The leakage power consumption can be calculated according to the following formulas:
ILK0 = 500 000 × e-α, with α = 3 000 / (273 + B×TJ)
Parameter B must be replaced by
1.0 for typical values
1.6 for maximum values
ILK1 = 600 000 × e-α, with α = 5 000 / (273 + B×TJ)
Parameter B must be replaced by
1.0 for typical values
1.3 for maximum values
Table 16 Leakage Power Consumptio n
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Leakage supply current
(DMP_1 powered)1)
1) All inputs (including pins configur ed as input s) are set at 0 V to 0 .1 V or at VDDP - 0.1 V to VDDP and all output s
(including pins configured as outputs) are disconne cted.
ILK1 CC 0.03 0.05 mA TJ=2C
1)
0.5 1.3 mA TJ=8C
1)
2.1 6.2 mA TJ=12C
1)
4.4 13.7 mA TJ=15C
1)
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 85 V2.1, 2011-07
Figure 15 Leakage Supply Current as a Func tion of Temperature
MC_XY_ILKN
TJ[°C]
ILK [mA]
2
6
10
0 50 150
100-50
4
8
12
14 ILK1max
ILK1typ
125
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 86 V2.1, 2011-07
4.3 Analog/Digital Converter Parameters
These parameters describe the conditions for optimum ADC performance.
Note: Operating Conditions apply.
Table 17 ADC Parameters
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Switched capacitance at
an analog input CAINSW
CC 4 5 pF not subject to
production
test1)
Total capacitance at an
analog input CAINT
CC 10 12 pF not subject to
production
test1)
Switched capacitance at
the reference input CAREFSW
CC 7 9 pF not subject to
production
test1)
Total capacitance at the
reference input CAREFT
CC 13 15 pF not subject to
production
test1)
Differential Non-Linearity
Error |EADNL|
CC 0.8 1.0 LSB not subject to
production test
Gain Error |EAGAIN|
CC 0.4 0.8 LSB not subject to
production test
Integral Non-Linearity |EAINL|
CC 0.8 1.2 LSB not subject to
production test
Offset Error |EAOFF|
CC 0.5 0.8 LSB not subject to
production test
Analog clock frequency fADCI SR 0.5 20 MHz Upper voltage
range
0.5 16.5 MHz Lower volt age
range
Input resistance of the
selected analog channel RAIN CC −−2kOh
mnot subject to
production
test1)
Input resistance of the
reference input RAREF
CC −−2kOh
mnot subject to
production
test1)
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 87 V2.1, 2011-07
Broken wire detection
delay against VAGND2) tBWG CC −−50 3)
Broken wire detection
delay against VAREF2) tBWR CC −−50 4)
Conversion time for 8-bit
result2) tc8 CC (11 + STC) x tADCI
+ 2 x tSYS
Conversion time for 10-bit
result2) tc10 CC (13 + STC) x tADCI
+ 2 x tSYS
Total Unadjusted Error |TUE|
CC 12LSB
5)
Wakeup time from analog
powerdown, fast mode2) tWAF CC −−4μs
Wakeup time from analog
powerdown, slow mode2) tWAS CC −−15 μs
Analog reference ground VAGND
SR VSS
- 0.05 1.5 V
Analog input voltage
range VAIN SR VAGND VAREF V6)
Analog reference voltage VAREF
SR VAGND
+ 1.0 VDDPA
+ 0.05 V5)
1) These parameter values cover the complete operating range. Under relaxed operating conditions (room
temperature, nominal supply voltage) the typical va lues can be used for calculation.
2) This parameter includes the sample time (also the additional sample time specified by STC), the time to
determine the digital result and the time to load the result register with the conversion result. Values for the
basic clock tADCI depend on programming.
3) The broken wire detection delay against VAGND is measured in numbers of consecutive precharge cycles at a
conversion rate of not more than 500 µs. Result below 10% (66H).
4) The broken wire detection delay against VAREF is measured in numbers of consecutive precharge cycles at a
conversion rate of not more than 10 µs. This function is influenced by leakage current, in particular at high
temperature. Result above 80% (332H).
5) TUE is tested at VAREF = VDDPA = 5.0 V, VAGND = 0 V. It is verified by design for all other voltages within the
defined voltage range. The specified TUE is valid only if the absolute sum of input overload currents on an alog
port pins (see IOV specification) does not exceed 10 mA, and if VAREF and VAGND remain stable during the
measurement time.
6) VAIN may exceed VAGND or VAREF up to the absolute maximum ratings. However, the conversion result in these
cases will be X000H or X3FFH, respectively.
Table 17 ADC Parameters (cont’d)
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 88 V2.1, 2011-07
Figure 16 Equivalent Circuitry for Analog Inputs
A/D Converter
MCS05570
R
Source
V
AIN
C
Ext
C
AINT
C
AINS
-
R
AIN, On
C
AINS
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 89 V2.1, 2011-07
Sample time and conversion time of the XE164xM’s A/D converters are programmable.
The timing above can be calculated using Table 18.
The limit values for fADCI must not be exceeded wh en selecting the prescaler value.
Converter Timing Example A:
Converter Timing Example B:
Table 18 A/D Con verter Computation Table
GLOBCTR.5-0
(DIVA) A/D Converter
Analog Clock fADCI
INPCRx.7-0
(STC) Sample Time1)
tS
1) The selected sample time is doubled if broken wire detection is active (due to the presampling phase).
000000BfSYS 00HtADCI × 2
000001BfSYS / 2 01HtADCI × 3
000010BfSYS / 3 02HtADCI × 4
:fSYS / (DIVA+1) : tADCI × (STC+2)
111110BfSYS / 63 FEHtADCI × 256
111111BfSYS / 64 FFHtADCI × 257
Assumptions: fSYS = 80 MHz (i.e. tSYS = 12.5 ns), DIVA = 03H, STC = 00H
Analog clock fADCI = fSYS / 4 = 20 MHz, i.e. tADCI = 50 ns
Sample time tS= tADCI × 2 = 100 ns
Conversion 10-bit:
tC10 = 13 × tADCI + 2 × tSYS = 13 × 50 ns + 2 × 12.5 ns = 0.675 μs
Conversion 8-bit:tC8 = 11 × tADCI + 2 × tSYS = 11 × 50 ns + 2 × 12.5 ns = 0.575 μs
Assumptions: fSYS = 40 MHz (i.e. tSYS = 25 ns), DIVA = 02H, STC = 03H
Analog clock fADCI = fSYS / 3 = 13.3 MHz, i.e. tADCI = 75 ns
Sample time tS= tADCI × 5 = 375 ns
Conversion 10-bit:
tC10 = 16 × tADCI + 2 × tSYS = 16 × 75 ns + 2 × 25 ns = 1.25 μs
Conversion 8-bit:tC8 = 14 × tADCI + 2 × tSYS = 14 × 75 ns + 2 × 25 ns = 1.10 μs
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 90 V2.1, 2011-07
4.4 System Parameters
The following parameters specify several aspects which are important when integrating
the XE164xM into an application system.
Note: The se parameters are not sub j ect to p roduction test but verified by design and/or
characterization.
Note: Operating Conditions apply.
Table 19 Various System Parameters
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Short-term deviation of
internal clock source
frequency1)
1) The short-term frequency deviation refers to a time frame of a few hours and is measured relative to the current
frequency at the beginning of the r espective ti meframe. This pa rameter i s use ful to determi ne a time span for
re-triggering a LIN synchroniza tion.
ΔfINT CC -1 1%ΔTJ 10 °C
Internal clock source
frequency fINT CC 4.8 5.0 5.2 MHz
Wakeup clock source
frequency2)
2) This parameter is tested for the fastest and the slowest selection. The medium selections are not subject to
production test - verifi ed by design/characterization
fWU CC 400 700 kHz FREQSEL= 00
210 390 kHz FREQSEL= 01
140 260 kHz FREQSEL= 10
110 200 kHz FREQSEL= 11
Startup time from power-
on with code execution
from Flash
tSPO CC 1.8 2.2 2.7 ms fWU =500kHz
Startup time from stopover
mode with code execution
from PSRAM
tSSO CC 11 /
fWU3) 12 /
fWU3) μs
Core voltage (PVC)
supervision level VPVC CC VLV
- 0.03 VLV VLV
+ 0.07
4)
V5)
Supply watchdog (SWD)
supervision level VSWD
CC VLV
- 0.106) VLV VLV
+ 0.15 V L ower voltage
range5)
VLV
- 0.15 VLV VLV
+ 0.15 V U pper voltage
range5)
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 91 V2.1, 2011-07
Conditions for tSPO Timing Measurement
The time required for the transition from Power-On to Base mode is called tSPO. It is
measured under the following conditions:
Precondition: The pad supply is valid, i.e. VDDPB is above 3.0 V and remains above 3.0 V
even though the XE164xM is starting up. No debugger is attached.
Start condition: Power-on reset is removed (PORST = 1).
End condition: External pin toggle caused by first user instruction executed from FLASH
after startup.
Conditions for tSSO Timing Measurement
The time required for the transition from Stopover to Stopover Waked-Up mode is
called tSSO. It is measured under the following conditions:
Precondition: The Stopover mode has been entered using the procedure defined in the
Programmer’s Guide.
Start condition: Pin toggle on ESR pin triggering the startup sequence.
End condition: External pin toggle caused by first user instruction executed from PSRAM
after startup.
Coding of bit fields LEVxV in SWD and PVC Configuration Registers
3) fWU in MHz
4) This value includes a hysteresis of approximately 50 mV for rising voltage.
5) VLV = selected SWD voltage level
6) The limit VLV - 0.10 V is valid for the OK1 level. The limit for the OK2 level is VLV - 0.15 V.
Table 20 Coding of bit fields LEVxV in Register SWDCON 0
Code Default Voltage Level Notes1)
0000B2.9 V
0001B3.0 V LEV1V: reset request
0010B3.1 V
0011B3.2 V
0100B3.3 V
0101B3.4 V
0110B3.6 V
0111B4.0 V
1000B4.2 V
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 92 V2.1, 2011-07
1001B4.5 V LEV2V: no request
1010B4.6 V
1011B4.7 V
1100B4.8 V
1101B4.9 V
1110B5.0 V
1111B5.5 V
1) The indicated default levels are selected automatically after a power reset.
Table 21 Coding of Bitfields LEVxV in Regis te r s PVCyCO N z
Code Default Voltage Level Notes1)
1) The indicated default levels are selected automatically after a power reset.
000B0.95 V
001B1.05 V
010B1.15 V
011B1.25 V
100B1.35 V LEV1V: reset request
101B1.45 V LEV2V: interrupt request2)
2) Due to variations of the tolerance of both the Embedded Voltage Regulators (EVR) and the PVC levels, this
interrupt can be triggered inadvertently, even though the core voltage is within the normal range. It is,
therefore, recommended not to use the this warning level.
110B1.55 V
111B1.65 V
Table 20 Coding of bit fields LEVxV in Register SWDCON 0 (cont’d)
Code Default Voltage Level Notes1)
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 93 V2.1, 2011-07
4.5 Flash Memory Parameters
The XE164xM is delivered with all Flash sectors erased and with no protection installed.
The data retention time of the XE164xM’s Flash memory (i.e. the time after which stored
data can still be retrieved) depends on the number of times the Flash memory has been
erased and programmed.
Note: The se parameters are not sub j ect to p roduction test but verified by design and/or
characterization.
Note: Operating Conditions apply.
Table 22 Flash Parameters
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Parallel Flash module
program/erase limit
depending on Flash read
activity
NPP SR −−41) NFL_RD 1,
fSYS 80 MHz
−−12) NFL_RD >1
Flash erase endurance for
security pages NSEC SR 10 −−cycle
stRET 20 years
Flash wait state s3) NWSFLAS
H SR 1−− fSYS 8MHz
2−− fSYS 13 MHz
3−− fSYS 17 MHz
4−− fSYS >17MHz
Erase time per
sector/page tER CC 74) 8.0 ms
Programming time per
page tPR CC 34) 3.5 ms
Data retention time tRET CC 20 −−year
sNEr 1 000
cycles
Drain disturb limit NDD SR 32 −−cycle
s
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 94 V2.1, 2011-07
Access to the XE164xM Flash modules is controlled by the IMB. Built-in prefetch
mechanisms optimize the performance for sequential access.
Flash access waitstates only affect non-sequential access. Due to prefetch
mechanisms, the performance for sequential access (depending on the software
structure) is only partially influenced by waitstates.
Number of erase cycles NEr SR −−15 000 cycle
stRET 5years;
Valid for up to
64 user-
selected
sectors (data
storage)
−−1 000 cycle
stRET 20 years
1) All Flash module(s) can be erased/programmed while code is executed and/or data is read from only one
Flash module or from PSRAM. The Flash module that delivers code/data can, of course, not be
erased/programmed.
2) Flash module 3 can be erased/programmed while code is executed and/or data is read from any other Flash
module.
3) Value of IMB_IMBCTRL.WSFLASH.
4) Programming and erase times depend on th e internal Fla sh clock source. The control state machi ne n eeds a
few system clock cycles. This increases the stated durations noticably only at extremely low system clock
frequencies.
Table 22 Flash Parameters (cont’d)
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 95 V2.1, 2011-07
4.6 AC Parameters
These parameters descri be the dynamic behavior of the XE164xM.
4.6.1 Testing Waveforms
These values are used for characterization and production testi ng (except pin XTAL1).
Figure 17 Input Output Waveforms
Figure 18 Floating Waveforms
MCD05556C
0.3 VDDP
Input Signal
(driven b y te s te r)
Output Signal
(measured)
H o ld time
Output delay Output delay
H o ld tim e
Output timings refer to the rising edge of CLKO UT.
Input timings are calculated from the time, when the input signal reaches
VIH or VIL, resp ec tiv e ly .
0.2 VDDP
0.8 VDDP
0.7 VDDP
MCA05565
Timing
Reference
Points
V
Load
+ 0.1 V
V
Load
- 0. 1 V
V
OH
- 0.1 V
V
OL
+ 0.1 V
For timing purposes a port pin is no longer floating when a 100 mV
change from load voltage occurs, but begins to float when a 100 m V
change from the loaded V
OH
/V
OL
level occurs (I
OH
/I
OL
= 20 mA).
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 96 V2.1, 2011-07
4.6.2 Definition of Internal Timing
The internal operation of the XE164xM is controlled by the internal system clock fSYS.
Because the system clock signal fSYS can be generated from a number of internal and
external sources using different mechanisms, the duration of the system clock periods
(TCSs) and their variation (as well as the derived external timing) depend on the
mechanism used to generate fSYS. This must be considered when calculating the timing
for the XE164xM.
Figure 19 Generation Mechanisms for the System Clock
Note: The example of PLL operation shown in Figure 19 uses a PLL factor of 1:4; the
example of prescaler operation uses a divider factor of 2:1.
The specification of the external timing (AC Characteristics) depends on the period of the
system clock (TCS).
MC_XC2X_CLOCKGEN
Phase Locked Loop Operation (1:N)
f
IN
Di rect Clock Dri ve (1:1)
Prescaler Op eratio n ( N :1)
f
SYS
f
IN
f
SYS
f
IN
f
SYS
TCS
TCS
TCS
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 97 V2.1, 2011-07
Direct Drive
When direct drive operation is selected (SYSCON0.CLKSEL = 11B), the system clock is
derived directly from the input clock signal CLKIN1:
fSYS = fIN.
The frequency of fSYS is t he same as the frequency of fIN. In this case the hi gh and low
times of fSYS are determined by the duty cycle of the input clock fIN.
Selecting Bypass Operation from the XTAL11) input and using a divider factor of 1 results
in a similar configuration.
Prescaler Operation
When prescaler operation is selected (SYSCON0.CLKSEL = 10B, PLLCON0.VCOBY =
1B), the system clock is derived either from the crystal oscillator (input clock signal
XTAL1) or from the internal clock source through the output prescaler K1 (= K1DIV+1):
fSYS = fOSC / K1.
If a divider factor of 1 is selected, the frequency of fSYS equals t he frequency of fOSC. In
this case the high and low times of fSYS are determined by the duty cycle of the input
clock fOSC (external or internal).
The lowest system clock frequency results from selecting the maximum value for the
divider factor K1:
fSYS = fOSC / 1024.
4.6.2.1 Phase Loc ked Loop (PLL)
When PLL operation is selected (SYSCON0.CLKSEL = 1 0B, PLLCON0.VCOBY = 0B),
the on-chip phase locked loop is enabled and provides the system clock. The PLL
multiplies the input frequency by the factor F (fSYS = fIN × F).
F is calculated from the input divider P (= PDIV+1), the multiplication factor N (=
NDIV+1), and the output divider K2 (= K2DIV+1):
(F = N / (P × K2)).
The input clock can be derived either from an external source at XTAL1 or from the on-
chip clock source.
The PLL circuit synchronizes the system clock to the input clock. This synchronization is
performed smoothly so that the system clock frequency does not change abruptly.
Adjustment to the input clock continuously changes the frequency of fSYS so that it is
locked to fIN. The slight variation causes a jitter of fSYS which in turn affects the duratio n
of individual TCSs.
1) Voltages on XTAL1 must comply to the core supply voltage VDDIM.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 98 V2.1, 2011-07
The timing in the AC Characteristics refers to TCSs. Timing must be calculated using the
minimum TCS possible under the given circumst ances.
The actual minimum value for TCS depends on the jitter of the PLL. Because the PLL is
constantly adjusting its output frequency to correspond to the input frequency (from
crystal or oscillator), the accumulated jitter is limited. This means that the relative
deviation for periods of more than one TCS is lower than for a single TCS (see formulas
and Figure 20).
This is especially important for bus cycles using waitstates and for the operation of
timers, serial interfaces, etc. For all slower operations and longer periods (e.g. pulse train
generation or measurement, lower baudrates, etc.) the deviation caused by the PLL jitter
is negligible.
The value of the accumulated PLL jitter depends on the number of consecutive VCO
output cycles within the respective timeframe. The VCO output clock is divided by the
output prescaler K2 to generate the system clock signal fSYS. The number of VCO cycles
is K2 ×T, where T is the number of consecutive fSYS cycles (TCS).
The maximum accumulated jitter (long-term jitter) DTmax is defined by:
DTmax [ns] = ±(220 / (K2 × fSYS) + 4.3)
This maximum value is applicable, if either the number of clock cycles T > (fSYS / 1.2) or
the prescaler value K2 > 17.
In all other cases for a timeframe of T × TCS the accumulated jitter DT is determined by:
DT [ns] = DTmax × [(1 - 0.058 × K2) × (T - 1) / (0.83 × fSYS - 1) + 0.058 × K2]
fSYS in [MHz] in all formulas.
Example, for a period of 3 TCSs @ 33 MHz and K2 = 4:
Dmax = ±(220 / (4 × 33) + 4.3) = 5.97 ns (Not applicable directly in this case!)
D3 = 5.97 × [(1 - 0.058 × 4) × (3 - 1) / (0.83 × 33 - 1) + 0.058 × 4]
= 5.97 × [0.768 × 2 / 26.39 + 0.232]
= 1.7 ns
Example, for a period of 3 TCSs @ 33 MHz and K2 = 2:
Dmax = ±(220 / (2 × 33) + 4.3) = 7.63 ns (Not applicable directly in this case!)
D3 = 7.63 × [(1 - 0.058 × 2) × (3 - 1) / (0.83 × 33 - 1) + 0.058 × 2]
= 7.63 × [0.884 × 2 / 26.39 + 0.116]
= 1.4 ns
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 99 V2.1, 2011-07
Figure 20 Approximated Accumulated PLL Jitter
Note: The specified PLL jitter values are valid if the capacitive load per pin does not
exceed CL=20pF.
The maximum peak-to-peak noise on the pad supply voltage (measured between
VDDPB pin 100 and VSS pin 1) is limited to a peak-to-pe ak vo ltage of VPP = 50 mV.
This can be achieved by appropriate blocking of the supply voltage as close as
possible to the supply pins and using PCB supply and ground planes.
MC_XC2X_JITTER
Cycles
T
0
±1
±2
±3
±4
±5
±6
±7
±8
Acc. jitter
D
T
20 40 60 80 100
ns fSYS = 66 MH z
1
fVCO = 132 M Hz
fVCO = 66 MHz
±9 fSYS = 33 M Hz
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 100 V2.1, 2011-07
PLL frequency band selection
Different frequency bands can be selected for the VCO so that the operation of the PLL
can be adjusted to a wide range of input and output frequencies:
4.6.2.2 Wakeup Clock
When wakeup operation is selected (SYSCON0.CLKSEL = 00B), the system clock is
derived from the low-frequency wakeup clock source:
fSYS = fWU.
In this mode, a basic functionality can be maintained without requiring an external clock
source and while minimizing the power consumption.
4.6.2.3 Selecting and Changing the Operating Frequency
When selecting a clock source and the clock generation method, the required
parameters must be carefully written to the respective bit fields, to avoid unintended
intermediate states.
Many applications change the frequen cy of the system clock (fSYS) during operation i n
order to optimize system performance and power consumption. Changing the operating
frequency also changes the switching currents, which influences the power supply.
To ensure proper o peration of the on-chip EVRs while they generate the core volta ge,
the operating frequency shall only be changed in certain steps. This prevents overshoots
and undershoots of the supply voltage.
To avoid the ind icated proble ms, recommended sequ ences are provided which ensure
the intended operation of the clock system interacting with the power system.
Please refer to the Programmer’s Guide.
Table 23 System PLL Parameters
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
VCO output frequency
(VCO controlled) fVCO CC 50 110 MHz VCOSEL = 00B
100 160 MHz VCOSEL = 01B
VCO output frequency
(VCO free-running) fVCO CC 10 40 MHz VCOSEL = 00B
20 80 MHz VCOSEL = 01B
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 101 V2.1, 2011-07
4.6.3 External Clock Input Parameters
These parameters specify the external clock generation for the XE164xM. The clock can
be generated in two ways:
By connecting a crystal or ceramic resonator to pins XTAL1/XTAL2
By supplying an external clock signal
This clock signal ca n b e suppli ed eit her to pi n XT AL1 (core vo lt age domain) o r to
pin CLKIN1 (IO voltage domain)
If connected to CLKIN1, the input signal must reach the defined input levels VIL and VIH.
If connected to XTAL1, a minimum amplitude VAX1 (peak-to-peak voltage) is sufficient for
the operation of the on-chip oscillator.
Note: The given clock timing parameters (t1
t4) are only valid for an external clock
input signa l .
Note: Operating Conditions apply.
Table 24 External Clock Input Characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Oscillator frequency fOSC SR 4 40 MHz Input = clock
signal
416 MHz Input = crystal
or ceramic
resonator
XTAL1 input current
absolute value |IIL| CC −−20 μA
Input clock high time t1 SR 6 −−ns
Input clock low time t2 SR 6 −−ns
Input clock rise time t3 SR −−8ns
Input clock fall time t4 SR −−8ns
Input voltage amplitude on
XTAL11) VAX1 SR 0.3 x
VDDIM
−−V 4 to 16 MHz
0.4 x
VDDIM
−−V 16 to 25 MHz
0.5 x
VDDIM
−−V 25 to 40 MHz
Input voltage range limits
for signal on XTAL1 VIX1 SR -1.7 +
VDDIM
1.7 V 2)
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 102 V2.1, 2011-07
Note: For crystal or ceramic resonator operation, it is strongly recommended to measure
the oscillation allowance (negative resistance) in the final target system (layout) to
determine th e op ti mu m parameters for oscillator operation.
The manufacturers of crystals and ceramic resonators offer an oscillator
evaluation service. This evaluation checks the crystal/resonator specification
limits to ensure a reliable oscillator opera tion.
Figure 21 External Clock Drive XTAL1
1) The amplitude voltage VAX1 refers to the offset voltage VOFF. This offset voltage must be stable during the
operation and the resulting voltage peaks must remain within the limits defined by VIX1.
2) Overload conditions must not occur on pin XTAL1.
MC_EXTCLOCK
t
1
t
2
t
OSC
= 1/f
OSC
t
3
t
4
V
OFF
V
AX1 0.1 V
AX1
0.9 VAX1
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 103 V2.1, 2011-07
4.6.4 Pad Properties
The output pad d rivers of the XE164xM ca n operate in several use r-selectable modes.
Strong driver mode allows controlling external components requiring higher currents
such as power bridges or LEDs. Reducing th e driving power of an output pad reduces
electromagnetic emissions (EME). In strong driver mode, selecting a slower edge
reduces EME.
The dynamic behavi or, i.e. the rise time and fall time, depends on the applied ext ernal
capacitance that must be charged and discharged. Timing values are given for a
capacitance of 20 pF, unless otherwise noted.
In general, the performance of a pad driver depends on the available supply voltage
VDDP. The following table lists the pad parameters.
Note: The se parameters are not sub j ect to p roduction test but verified by design and/or
characterization.
Note: Operating Conditions apply.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 104 V2.1, 2011-07
Table 25 is valid under the following conditions:
VDDP 4.5 V; VDDPtyp = 5 V; VDDP 5.5 V; CL20 pF; CL100 pF;
Table 25 Standard Pad Par ameters for Upper Voltage Rang e
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Maximum output driver
current (absolute value)1)
1) The total output current that may be drawn at a given time must be limited to protect the supply rails from
damage. For any group of 16 neighboring output pins, the total output current in each direction (ΣIOL and Σ-
IOH) must remain below 50 mA.
IOmax
CC −−10 mA Strong driver
−−4.0 mA Medium driver
−−0.5 mA Weak driver
Nominal output driver
current (absolute value) IOnom
CC −−2.5 mA Strong driver
−−1.0 mA Medium driver
−−0.1 mA Weak driver
Rise and Fall times (10% -
90%) tRF CC −−4.2 +
0.14 x
CL
ns Strong driver;
Sharp edge
−−11.6 +
0.22 x
CL
ns Strong driver;
Medium edge
−−20.6 +
0.22 x
CL
ns Strong driver;
Slow edge
−−23 +
0.6 x
CL
ns Medium driver
−−212 +
1.9 x
CL
ns Weak driver
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 105 V2.1, 2011-07
Table 26 is valid under the following conditions:
VDDP 3.0 V; VDDPtyp = 3.3 V; VDDP 4.5 V; CL20 pF; CL100 pF;
Table 26 Standard Pad Parameters for Lower Voltage Range
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Maximum output driver
current (absolute value)1)
1) The total output current that may be drawn at a given time must be limited to protect the supply rails from
damage. For any group of 16 neighboring output pins, the total output current in each direction (ΣIOL and Σ-
IOH) must remain below 50 mA.
IOmax
CC −−10 mA Strong driver
−−2.5 mA Medium driver
−−0.5 mA Weak driver
Nominal output driver
current (absolute value) IOnom
CC −−2.5 mA Strong driver
−−1.0 mA Medium driver
−−0.1 mA Weak driver
Rise and Fall times (10% -
90%) tRF CC −−6.2 +
0.24 x
CL
ns Strong driver;
Sharp edge
−−24 +
0.3 x
CL
ns Strong driver;
Medium edge
−−34 +
0.3 x
CL
ns Strong driver;
Slow edge
−−37 +
0.65 x
CL
ns Medium driver
−−500 +
2.5 x
CL
ns Weak driver
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 106 V2.1, 2011-07
4.6.5 External Bus Timing
The following parameters specify the behavior of the XE164xM bus interface.
Note: The se parameters are not sub j ect to p roduction test but verified by design and/or
characterization.
Note: Operating Conditions apply.
Bus Interface Perfor mance Limits
The output frequency at the bus interface pins is limited by the performance of the output
drivers. The fast clock driver (used for CLKOUT) can drive 80-MHz signals, the standard
drivers can drive 40-MHz signals
Therefore, the speed of the EBC must be limited, either by limiting the system frequency
to fSYS 80 MHz or by adding waitstates so that signal transitions have a minimum
distance of 12.5 ns.
For a description of the bus protocol and the programming of its variable timing
parameters, please refer to the User’s Manual.
Figure 22 CLKOUT Signal Timing
Table 27 EBC Parameters
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
CLKOUT Cycle Time1)
1) The CLKOUT cycle time is influenced by PLL jitter. For longer periods the relative deviation decreases (see
PLL deviation formula).
t5 CC 1 / fSYS ns
CLKOUT high time t6 CC 2 −−
CLKOUT low time t7 CC 2 −−
CLKOUT rise time t8 CC −−3ns
CLKOUT fall time t9 CC −−3
MC_X_EBCCLKOUT
CLKOUT
t
5
t
6
t
7
t
8
t
9
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 107 V2.1, 2011-07
Note: The term CLKOUT refers to the reference clock outpu t signa l which is g enera te d
by selecting fSYS as the sou rce signal for the clo ck output signa l EXTCLK on pin
P2.8 and by enabling the high-speed clock dri v er on this pin.
Variable Memory Cycles
External bus cycles of the XE164xM are executed in five consecutive cycle phases (AB,
C, D, E, F). The duration of each cycle phase is programmable (via the TCONCSx
registers) to adapt the external bus cycles to the respective external module (memory,
peripheral, etc.).
The duration of the access phase can optionally be controlled by the external module
using the READY handshake input.
This table provides a summary of the phases and the ranges f or their length.
Note: The bandwidth of a parameter (from minimum to maximum value) covers the
whole operating range (temperature, voltage) as well as process variations. Within
a given device, however, this bandwid th is sma ller than the specified rang e. This
is also due to interdependencies between certain parameters. Some of these
interdependencies are described in additiona l notes (see standard timing).
Note: Operating Conditions apply; CL =20pF.
Table 28 Programmable Bus Cycle Phases (see timing diagrams)
Bus Cycle Phase Parameter Valid Values Unit
Address setup phase, the standard duration of this
phase (1 … 2 TCS) can be extended by 0 … 3 TCS
if the address window is changed
tpAB 1 … 2 (5) TCS
Command delay phase tpC 0 … 3 TCS
Write Data setup/MUX Trist ate phase tpD 0 … 1 TCS
Access phase tpE 1 … 32 TCS
Address/Write Data hold phase tpF 0 … 3 TCS
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 108 V2.1, 2011-07
Table 29 EBC External Bus Timing for Upper Voltage Range
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Output valid delay for RD,
WR(L/H)t10 CC 713ns
Output valid delay for
BHE, ALE t11 CC 714ns
Address output valid delay
for A23 ... A0 t12 CC 814ns
Address output valid delay
for AD15 ... AD0 (MUX
mode)
t13 CC 815ns
Output valid delay for CS t14 CC 713ns
Data output valid delay for
AD15 ... AD0 (write data,
MUX mode)
t15 CC 815ns
Data output valid delay for
D15 ... D0 (write data,
DEMUX mode)
t16 CC 815ns
Output hold t ime for RD,
WR(L/H)t20 CC -2 6 8 ns
Output hold time for BHE,
ALE t21 CC -2 6 10 ns
Address output hold time
for AD15 ... AD0 t23 CC -3 6 8 ns
Output hold t ime for CS t24 CC -3 6 11 ns
Data output hold time for
D15 ... D0 and AD15 ...
AD0
t25 CC -3 6 8 ns
Input setup time for
READY, D15 ... D0, AD15
... AD0
t30 SR 25 15 ns
Input hold time READY,
D15 ... D0, AD15 ... AD01)
1) Read data are latche d with the same inter nal clock edge tha t triggers the addr ess change and the ri sing edge
of RD. Address changes before the en d of RD have no impact on (de multiplexed) read cycles. Read da ta can
change after the rising edge of RD.
t31 SR 0 -7 ns
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 109 V2.1, 2011-07
Table 30 EBC External Bus Timing for Lower Voltage Range
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Output valid delay for RD,
WR(L/H)t10 CC 11 20 ns
Output valid delay for
BHE, ALE t11 CC 10 21 ns
Address output valid delay
for A23 ... A0 t12 CC 11 22 ns
Address output valid delay
for AD15 ... AD0 (MUX
mode)
t13 CC 10 22 ns
Output valid delay for CS t14 CC 10 13 ns
Data output valid delay for
AD15 ... AD0 (write data,
MUX mode)
t15 CC 10 22 ns
Data output valid delay for
D15 ... D0 (write data,
DEMUX mode)
t16 CC 10 22 ns
Output hold t ime for RD,
WR(L/H)t20 CC -2 8 10 ns
Output hold time for BHE,
ALE t21 CC -2 8 10 ns
Address output hold time
for AD15 ... AD0 t23 CC -3 8 10 ns
Output hold t ime for CS t24 CC -3 8 11 ns
Data output hold time for
D15 ... D0 and AD15 ...
AD0
t25 CC -3 8 10 ns
Input setup time for
READY, D15 ... D0, AD15
... AD0
t30 SR 29 17 ns
Input hold time READY,
D15 ... D0, AD15 ... AD01)
1) Read data are latche d with the same inter nal clock edge tha t triggers the addr ess change and the ri sing edge
of RD. Address changes before the en d of RD have no impact on (demultiplexed) read cycles. Read da ta can
change after the rising edge of RD.
t31 SR 0 -9 ns
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 110 V2.1, 2011-07
Figure 23 Multiplexed Bus Cycle
CLKOUT
tp
AB
tp
C
tp
D
tp
E
tp
F
ALE
t
21
t
11
A23-A16,
BH E, C Sx
t
11
/
t
12
/
t
14
RD
WR(L/H)
t
20
t
10
Data In
AD15-AD0
(read)
t
30
t
31
MC_X_EBCMUX
AD15-AD0
(write)
t
13
t
15
t
25
t
13
t
23
Data OutLow A ddres s
High Addr ess
Low A ddres s
t
24
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 111 V2.1, 2011-07
Figure 24 Demultiplexed Bus Cycle
Address
tp
AB
tp
C
tp
D
tp
E
tp
F
t
21
t
11
t
11
/
t
12
/
t
14
t
20
t
10
Data In
t
30
t
31
MC_X_EBCDEMUX
t
16
t
25
CLKOUT
ALE
A23-A0,
BHE, CSx
RD
WR(L/H)
D15-D0
(read)
D15-D0
(write) Data Out
t
24
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 112 V2.1, 2011-07
4.6.5.1 Bus Cycle Control with the READY Input
The duration of an e xte rn al bu s cycle can be co nt rolled by t he ext erna l circuit using th e
READY input signal. The polari ty of this input signal can be selected .
Synchronous READY permits the shortest possible bus cycle but requires the input
signal to be synchronous to the reference signal CLKOUT.
An asynchronous READY signal puts no timing constraints on the input signal but incurs
a minimum of one waitstate due to the additi onal synchronizati on stage. The minimum
duration of an asynchronous READY signal for safe synchronization is one CLKOUT
period plus the input setup time.
An active READY signal can be deactivated in response to the trail ing (rising) edge of
the corresponding command (RD or WR).
If the next bus cycle is controlled by READY, an active READY signal must be disabled
before the first valid sample poi nt in the next bus cycle. This sample point depends on
the programmed phases of the next cycle.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 113 V2.1, 2011-07
Figure 25 READY Timing
Note: If the READY input is sampled inactive at the indicated sampling point (“Not Rdy”)
a READY-controlled waitstate is inserted (tpRDY),
sampling the READY input active at the indicated sampling point (“Ready”)
terminates the currently running bus cycle.
Note the different sampling points for synchronous and asynchronous READY.
This example uses one mandatory waitstate (see tpE) before the READY input
value is used .
MC_X_EBCREADY
READY
Asynchron. Not Rdy READY
Data Out
t
25
t
30
D15-D0
(write)
READY
Synchronous Not Rdy READY
Data In
D15-D0
(read)
t
10
RD, WR
tp
D
tp
E
tp
RDY
tp
F
CLKOUT
t
20
t
30
t
31
t
31
t
30
t
31
t
30
t
31
t
30
t
31
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 114 V2.1, 2011-07
4.6.6 Synchronous Serial Interface Timing
The following parameters are applicable for a USIC channel operated in SSC mode.
Note: The se parameters are not sub j ect to p roduction test but verified by design and/or
characterization.
Note: Operating Conditions apply; CL = 20 pF.
Table 31 USIC SSC Master Mode Timing for Upper Voltage Range
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Slave select output SELO
active to first SCLKOUT
transmit edge
t1 CC tSYS
- 8 1)
1) tSYS = 1 / fSYS
−−ns
Slave select output SELO
inactive after last
SCLKOUT receive edge
t2 CC tSYS
- 6 1) −−ns
Data output DOUT valid
time t3 CC -6 9ns
Receive data input setup
time to SCLKOUT receive
edge
t4 SR 31 −−ns
Data input DX0 hold time
from SCLKOUT re ceive
edge
t5 SR -4 −−ns
Table 32 USIC SSC Master Mode Timing for Lower Voltage Range
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Slave select output SELO
active to first SCLKOUT
transmit edge
t1 CC tSYS
- 10 1) −−ns
Slave select output SELO
inactive after last
SCLKOUT receive edge
t2 CC tSYS
- 9 1) −−ns
Data output DOUT valid
time t3 CC -7 11 ns
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 115 V2.1, 2011-07
Receive data input setup
time to SCLKOUT receive
edge
t4 SR 40 −−ns
Data input DX0 hold time
from SCLKOUT re ceive
edge
t5 SR -5 −−ns
1) tSYS = 1 / fSYS
Table 33 USIC SSC Slave Mode Timing for Upper Voltage Range
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Select input DX2 setu p to
first clock input DX1
transmit edge 1)
1) These input timings are valid for asynch ronous input signal handling of slave select input, shift clock input, and
receive data input (bits DXnCR.DSEN = 0).
t10 SR 7 −−ns
Select input DX2 hold after
last clock input DX1
receive edg e1)
t11 SR 7 −−ns
Receive data input setup
time to shift clock receive
edge1)
t12 SR 7 −−ns
Data input DX0 hold time
from clock input DX1
receive edg e1)
t13 SR 5 −−ns
Data output DOUT valid
time t14 CC 7 33 ns
Table 32 USIC SSC Master Mode Timing for Lower Voltage Range (cont’d)
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 116 V2.1, 2011-07
Table 34 USIC SSC Slave Mode Timing for Lower Voltage Range
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Select input DX2 setu p to
first clock input DX1
transmit edge 1)
1) These input timings are valid for asynch ronous input signal handling of slave select input, shift clock input, and
receive data input (bits DXnCR.DSEN = 0).
t10 SR 7 −−ns
Select input DX2 hold after
last clock input DX1
receive edg e1)
t11 SR 7 −−ns
Receive data input setup
time to shift clock receive
edge1)
t12 SR 7 −−ns
Data input DX0 hold time
from clock input DX1
receive edg e1)
t13 SR 5 −−ns
Data output DOUT valid
time t14 CC 8 41 ns
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 117 V2.1, 2011-07
Figure 26 USIC - SSC Master/Slave Mode Timing
Note: This timing diagram shows a standard configuration where the slave select signal
is low-active and the serial clock signal is not shifted and not inverted.
t
2
t
1
USIC_SSC_TMGX.VSD
Clock Output
SCLKOUT
Data Output
DOUT
t
3
t
3
t
5
Data
valid
t
4
First Transmit
Edge
Data Input
DX0
Select Output
SELOx
Active
Master Mod e Timing
Slave Mode Timing
t
11
t
10
Clock Input
DX1
Data Output
DOUT
t
14
t
14
Data
valid
Data Input
DX0
Select Input
DX2
Active
t
13
t
12
T ransmit Edge: with this clock edge, transmit data is shifted to tra nsmit data output.
Receive Edge: with this clock edge, receive data at receive data input is latched.
Receive
Edge Last Receive
Edge
InactiveInactive
T ransmit
Edge
InactiveInactive
First Transmit
Edge Receive
Edge Transmit
Edge Last Receive
Edge
t
5
Data
valid
t
4
Data
valid
t
12
t
13
Drawn for BRGH.SCLKCFG = 00
B
. Also valid for for SCLKCFG = 01
B
with inverted SCLKOUT signal.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 118 V2.1, 2011-07
4.6.7 Debug Interface Timing
The debugger can communicate with the XE164xM either via the 2-pin DAP interface or
via the standard JTAG interface.
Debug via DAP
The following parameters are applicable for communication through the DAP debug
interface.
Note: The se parameters are not sub j ect to p roduction test but verified by design and/or
characterization.
Note: Operating Conditions apply; CL=20pF.
Table 35 DAP Interface Timi ng for Upper Voltage Range
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
DAP0 clock period t11 SR 251)
1) The debug interface cannot operate faster than the overall system, therefore t11 tSYS.
−−ns
DAP0 high time t12 SR 8 −−ns
DAP0 low time t13 SR 8 −−ns
DAP0 clock rise time t14 SR −−4ns
DAP0 clock fall time t15 SR −−4ns
DAP1 setup to DAP0
rising edge t16 SR 6 −−ns pad_type= stan
dard
DAP1 hold after DAP0
rising edge t17 SR 6 −−ns pad_type= stan
dard
DAP1 valid per DAP0
clock period2)
2) The Host has to find a suitable sampling point by analyzing the sync telegram response.
t19 CC 17 20 ns pad_type= stan
dard
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 119 V2.1, 2011-07
Figure 27 Test Clock Timing (DAP0)
Table 36 DAP Interface Ti ming for Lower Voltage Range
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
DAP0 clock period t11 SR 251)
1) The debug interface cannot operate faster than the overall system, therefore t11 tSYS.
−−ns
DAP0 high time t12 SR 8 −−ns
DAP0 low time t13 SR 8 −−ns
DAP0 clock rise time t14 SR −−4ns
DAP0 clock fall time t15 SR −−4ns
DAP1 setup to DAP0
rising edge t16 SR 6 −−ns pad_type= stan
dard
DAP1 hold after DAP0
rising edge t17 SR 6 −−ns pad_type= stan
dard
DAP1 valid per DAP0
clock period2)
2) The Host has to find a suitable sampling point by analyzing the sync telegram response.
t19 CC 12 17 ns pad_type= stan
dard
MC_DAP0
0.9
V
DDP
0.5
V
DDP
t
11
t
12
t
13
0.1
V
DDP
t
15
t
14
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 120 V2.1, 2011-07
Figure 28 DAP Timing Host to Device
Figure 29 DAP Timing Device to Host
Note: The transmission timing is determined by the receiving debugger by evaluating the
sync-request synchronization pattern telegram.
t
16
t
17
DAP0
DAP1
MC_DAP1_RX
DAP1
MC_DAP1_TX
t
11
t
19
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 121 V2.1, 2011-07
Debug via JTAG
The following parameters are applicable for communication through the JTAG debug
interface. The JTAG module is fully compliant with IEEE1149.1-2000.
Note: The se parameters are not sub j ect to p roduction test but verified by design and/or
characterization.
Note: Operating Conditions apply; CL=20pF.
Table 37 JTAG Interface Timing for Upper Voltage Range
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
TCK clock period t1 SR 501)
1) The debug interface cannot operate faster than the overall system, therefore t1 tSYS.
−−ns 2)
2) Under typical conditions, the interface can operate at transfer rates up to 20 MHz.
TCK high time t2 SR 16 −−ns
TCK low time t3 SR 16 −−ns
TCK clock rise time t4 SR −−8ns
TCK clock fall time t5 SR −−8ns
TDI/TMS setup to TCK
rising edge t6 SR 6 −−ns
TDI/TMS hold after TCK
rising edge t7 SR 6 −−ns
TDO valid from TCK falling
edge (propagation delay)3)
3) The falling edge on TCK is used to generate the TDO timing.
t8 CC 25 29 ns
TDO high impedance to
valid output from TCK
falling edge4)3)
4) The setup time for TDO is given implicitly by the TCK cycle time.
t9 CC 25 29 ns
TDO valid output to high
impedance from TCK
falling edge3)
t10 CC 25 29 ns
TDO hold after TCK falling
edge3) t18 CC 5 −−ns
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 122 V2.1, 2011-07
Table 38 JTAG Interface Timing for Lower Voltage Rang e
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
TCK clock period t1 SR 501)
1) The debug interface cannot operate faster than the overall system, therefore t1 tSYS.
−−ns 2)
2) Under typical conditions, the interface can operate at transfer rates up to 20 MHz.
TCK high time t2 SR 16 −−ns
TCK low time t3 SR 16 −−ns
TCK clock rise time t4 SR −−8ns
TCK clock fall time t5 SR −−8ns
TDI/TMS setup to TCK
rising edge t6 SR 6 −−ns
TDI/TMS hold after TCK
rising edge t7 SR 6 −−ns
TDO valid from TCK falling
edge (propagation delay)3)
3) The falling edge on TCK is used to generate the TDO timing.
t8 CC 32 36 ns
TDO high impedance to
valid output from TCK
falling edge4)3)
4) The setup time for TDO is given implicitly by the TCK cycle time.
t9 CC 32 36 ns
TDO valid output to high
impedance from TCK
falling edge3)
t10 CC 32 36 ns
TDO hold after TCK falling
edge3) t18 CC 5 −−ns
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Electrical Parameters
Data Sheet 123 V2.1, 2011-07
Figure 30 Test Clock Timing (TCK)
Figure 31 JTAG Timing
MC_JTAG_TCK
0.9 VDDP
0.5 VDDP
t1
t2t3
0.1 VDDP
t5t4
t6t7
t6t7
t9t8t10
TCK
TMS
TDI
TDO
MC_JTAG
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Package and Reliability
Data Sheet 124 V2.1, 2011-07
5 Package and Reliability
The XE166 Family devices use the package type PG-LQFP (Plastic Green - Low Profile
Quad Flat Package). The following specifications must be regarded to ensure proper
integration of the XE164xM in its target environment.
5.1 Packaging
These parameters specify the packaging rather than the silicon.
Note: To improve the EMC behavior, it is recommended to connect th e exposed pad to
the board ground, independent of the thermal require ments.
Board layout examples are given in an applica tion note.
Package Compatibility Considerations
The XE164xM is a member of the XE166 Family of microcontrollers. It is also compatible
to a certain extent with members of similar families or subfamilies.
Each package is optimized for the device it houses. Therefore, there may be slight
differences between packages of the same pin-count but for different device types. In
particular, the size of the Exposed Pad (if present) may vary.
If different device types are considered or planned for an application, it must be ensured
that the board layout fits all packages under consideration.
Table 39 Package Parameters (PG-LQFP-100-8)
Parameter Symbol L imit Val ues Unit Notes
Min. Max.
Exposed Pad Dimension Ex × Ey 6.2 × 6.2 mm
Power Dissipation PDISS –1.0W
Thermal resistance
Junction-Ambient RΘJA 47 K/W No thermal via1)
1) Device mounted on a 2-layer JEDEC bo ard (according to JESD 51-3) or a 4-laye r board wi thout th ermal via s;
exposed pad not soldered.
29 K/W 4-layer, no pad2)
2) Device mounted on a 4-layer JEDEC board (according to JESD 51-7) with thermal vias; exposed pad not
soldered.
23 K/W 4-layer, pad3)
3) Device mounted on a 4-layer JEDEC board (according to JESD 51-7) with thermal vias; exposed pad soldered
to the board.
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Package and Reliability
Data Sheet 125 V2.1, 2011-07
Package Outlines
Figure 32 PG-LQFP-100-8 (Plastic Gre en Thin Quad Flat Package)
All dimensions in mm.
You can find complete information about Infineon packages, packing and marking in our
Infineon Intern et Page “Packages”: http://www.infineon.com/packages
1) Does not include plastic or metal protrusion of 0.25 max. per side
PG-LQFP-100-3, -4, -8-PO V11
0.5
12
0.22 A-B0.08 MC
C
D100x
100x
±0.05
1.6 MAX.
±0.05
±0.05
C
0.1
0.08
1.4
±0.15
0.6
H
7˚ MAX.
+0.05
-0.06
0.15
A B
Index Marking
1
100
D
14 1)
16
0.2 A-B D100x
4x
D
A-B
0.2 H
14
1)
16
Bottom View
100
1
Exposed Diepad
Ey
Ex
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Package and Reliability
Data Sheet 126 V2.1, 2011-07
5.2 Thermal Considerations
When operating the XE164xM in a system, the total heat generated in the chip must be
dissipated to the ambient environment to pre vent overheat in g and the result in g the rma l
damage.
The maximum heat that can be dissi pated depends on the package and its integration
into the target board. The “Thermal resistance RΘJA” quantifies these parameters. The
power dissipation must be limited so that the average junction temperature does not
exceed 125 °C.
The difference between junction temperature and ambient temperature is determined by
ΔT = (PINT + PIOSTAT + PIODYN) × RΘJA
The internal power consumption is defined as
PINT = VDDP × IDDP (switching current and leakage current).
The static external power consumption caused by the output drivers is defined as
PIOSTAT = Σ((VDDP-VOH) × IOH) + Σ(VOL × IOL)
The dynamic external power consumption caused by the output drivers (PIODYN) depends
on the capacitive load connected to the respective pins and their switching frequencies.
If the total power dissipation for a given system configuration exceeds the defined limit,
countermeasures must be taken to ensure proper system operation:
Reduce VDDP, if possible in the system
Reduce the system frequency
Reduce the number of output pins
Reduce the load on active output drivers
XE164FM, XE164GM, XE164HM, XE164KM
XE166 Family / Base Line
Package and Reliability
Data Sheet 127 V2.1, 2011-07
5.3 Quality Declarations
The operation lif etime of the XE164xM d epends on the ope rating temperatu re. The life
time decreases with increasing temperature as shown in Table 41.
Table 40 Quality Parameters
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Operation lifetime tOP CC −−20 a See Table 41
ESD susceptibility
according to Human Body
Model (HBM)
VHBM
SR −−2 000 V EIA/JESD22-
A114-B
Moisture sensitivity level MSL CC −−3JEDEC
J-STD-020C
Table 41 Lifetime dependency from Temperature
Operating Time Operating Temperature
20 a TJ 110°C
95 500 h TJ = 120°C
68 500 h TJ = 125°C
49 500 h TJ = 130°C
26 400 h TJ = 140°C
14 500 h TJ = 150°C
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