GBJ25005–GBJ2510
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 1 (4)
25A Glass Passivated Bridge Rectifier
Features
D
Glass passivated die construction
D
High case dielectric strength of 1500VRMS
D
Low reverse leakage current
D
Surge overload rating to 350A peak
D
Ideal for printed circuit board applications
D
Plastic material – UL Recognition flammability
classification 94V–0
D
ULRecognized file #E95060
14 401
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage GBJ25005 VRRM 50 V
g
=Working peak reverse voltage
DC Bl ki lt
GBJ2501
RRM
=VRWM
V
100 V
=DC Blocking voltage GBJ2502 =VR200 V
GBJ2504 400 V
GBJ2506 600 V
GBJ2508 800 V
GBJ2510 1000 V
Peak forward surge current IFSM 350 A
Average forward current TC=100
°
C IFAV 25 A
Junction and storage temperature range Tj=Tstg –65...+150
°
C
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=12.5A VF1.05 V
Reverse current TC=25
°
C IR10
m
A
TC=125
°
C IR500
m
A
I2t Rating for fusing I2t 510 A2s
Diode capacitance VR=4V, f=1MHz CD85 pF
Thermal resistance
junction to case mounted on
220x220x1.6mm aluminum plate RthJC 1.6 K/W
GBJ25005–GBJ2510
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-982 (4)
Characteristics (Tj = 25
_
C unless otherwise specified)
0
5
10
15
20
25
30
25 50 75 100 125 150
15665 Tamb – Ambient Temperature ( °C )
I – Average Forward Current ( A )
FAV
0
Resistive or inductive load
without heatsink
with heatsink
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
0.01
0.1
1.0
10
0 0.4 0.8 1.2 1.6 2.0
100
IF Pulse Width = 300 µs
15666
I – Forward Current ( A )
F
VF – Forward Voltage ( V )
Tj = 25°C
Figure 2. Typ. Forward Current vs. Forward Voltage
110 100
0
100
200
300
400
I – Peak Forward Surge Current ( A )
FSM
Number of Cycles at 60 Hz
15667
Single Half Sine–Wave
(JEDEC Method)
Tj = 25°C
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
1
100
1000
1 10 100
10
Tj = 25°C
f = 1 MHz
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
15668
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
0.1
1.0
10
100
1000
0 20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
15669
Tj = 25°C
Tj = 150°C
Tj = 100°C
Tj = 125°C
I – Reverse Current ( A )
R
m
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
GBJ25005–GBJ2510
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 3 (4)
Dimensions in mm
14471
Case: molded plastic
Polarity: molded on body
Approx. weight: 6.6 grams
Mounting: through hole for #6 screw
Mounting torque: 5.0 in–lbs maximum
Marking: type number
GBJ25005–GBJ2510
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-984 (4)
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
