GBJ25005-GBJ2510 Vishay Lite-On Power Semiconductor 25A Glass Passivated Bridge Rectifier Features D D D D D D Glass passivated die construction High case dielectric strength of 1500VRMS Low reverse leakage current Surge overload rating to 350A peak Ideal for printed circuit board applications Plastic material - UL Recognition flammability classification 94V-0 14 401 D ULRecognized file #E95060 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC DC Bl Blocking ki voltage lt Test Conditions Type GBJ25005 GBJ2501 GBJ2502 GBJ2504 GBJ2506 GBJ2508 GBJ2510 Peak forward surge current Average forward current TC=100C Junction and storage temperature range Symbol VRRM =VRWM =V VR IFSM IFAV Tj=Tstg Value 50 100 200 400 600 800 1000 350 25 -65...+150 Unit V V V V V V V A A C Typ Unit V mA mA A2s pF K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current I2t Rating for fusing Diode capacitance Thermal resistance junction to case Rev. A2, 24-Jun-98 Test Conditions IF=12.5A TC=25C TC=125C VR=4V, f=1MHz mounted on 220x220x1.6mm aluminum plate Type Symbol VF IR IR I2t CD RthJC Min 85 1.6 Max 1.05 10 500 510 1 (4) GBJ25005-GBJ2510 Vishay Lite-On Power Semiconductor 30 1000 with heatsink C D - Diode Capacitance ( pF ) IFAV - Average Forward Current ( A ) Characteristics (Tj = 25_C unless otherwise specified) 25 20 15 10 without heatsink 5 15665 50 75 100 125 150 Tamb - Ambient Temperature ( C ) 1 25 Figure 1. Max. Average Forward Current vs. Ambient Temperature 10 100 VR - Reverse Voltage ( V ) 15668 Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 1000 IR - Reverse Current ( m A ) IF - Forward Current ( A ) 10 1 0 10 1.0 0.1 Tj = 150C 100 Tj = 125C Tj = 100C 10 1.0 Tj = 25C Tj = 25C IF Pulse Width = 300 s 0.01 0 15666 0.4 0.8 1.2 1.6 VF - Forward Voltage ( V ) 0.1 2.0 15669 Figure 2. Typ. Forward Current vs. Forward Voltage IFSM - Peak Forward Surge Current ( A ) 100 Resistive or inductive load 0 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Single Half Sine-Wave (JEDEC Method) Tj = 25C 400 300 200 100 0 1 15667 Tj = 25C f = 1 MHz 10 Number of Cycles at 60 Hz 100 Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 GBJ25005-GBJ2510 Vishay Lite-On Power Semiconductor Dimensions in mm 14471 Case: molded plastic Polarity: molded on body Approx. weight: 6.6 grams Mounting: through hole for #6 screw Mounting torque: 5.0 in-lbs maximum Marking: type number Rev. A2, 24-Jun-98 3 (4) GBJ25005-GBJ2510 Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98