1
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DN2535
DN2540
Advanced DMOS Technology
Not recommended for new designs. For products in TO-92
(N3) package and TO-243AA (N8) package, please use DN3535
or DN3545 instead.
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
❏High input impedance
❏Low input capacitance
❏Fast switching speeds
❏Low on resistance
❏Free from secondary breakdown
❏Low input and output leakage
Applications
❏Normally-on switches
❏Solid state relays
❏Converters
❏Linear amplifiers
❏Constant current sources
❏Power supply circuits
❏Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSX
Drain-to-Gate Voltage BVDGX
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions.
Package Options
N-Channel Depletion-Mode
Vertical DMOS FETs
TO-92
S G D
TO-243AA
(SOT-89)
G 
D 
S
D
TO-220
TAB: DRAIN
G 
D
S
Product marking for TO-243AA:
DN5D❋
Where ❋ = 2-week alpha date code
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
BVDSX /R
DS(ON) IDSS
BVDGX (max) (min) TO-92 TO-220 TO-243AA*
350V 25Ω150mA DN2535N3 DN2535N5 —
400V 25Ω150mA DN2540N3 DN2540N5 DN2540N8
Ordering Information
Order Number / Package
2
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Symbol Parameter Min Typ Max Unit Conditions
BVDSX DN2540 400 V VGS = -5V, ID = 100µA
DN2535 350
VGS(OFF) Gate-to-Source OFF Voltage –1.5 –3.5 V VDS = 25V, ID= 10µA
∆VGS(OFF) Change in VGS(OFF) with Temperature 4.5 mV/°CV
DS = 25V, ID= 10µA
IGSS Gate Body Leakage Current 100 nA VGS = ± 20V, VDS = 0V
ID(OFF) Drain-to-Source Leakage Current 10 µAV
GS = -10V, VDS = Max Rating
1mAV
GS = -10V, VDS = 0.8 Max Rating
TA = 125°C
IDSS Saturated Drain-to-Source Current 150 mA VGS = 0V, VDS = 25V
RDS(ON) Static Drain-to-Source 17 25 ΩVGS = 0V, ID = 120mA
ON-State Resistance
∆RDS(ON) Change in RDS(ON) with Temperature 1.1 %/°CV
GS = 0V, ID = 120mA
GFS Forward Transconductance 325 m ID = 100mA, VDS = 10V
CISS Input Capacitance 200 300 VGS = -10V, VDS = 25V
COSS Common Source Output Capacitance 12 30 pF f = 1 MHz
CRSS Reverse Transfer Capacitance 1 5
td(ON) Turn-ON Delay Time 10 VDD = 25V,
trRise Time 15 ns ID = 150mA,
td(OFF) Turn-OFF Delay Time 15 RGEN = 25Ω
tfFall Time 20
VSD Diode Forward Voltage Drop 1.8 V VGS = -10V, ISD = 120mA
trr Reverse Recovery Time 800 ns VGS = -10V, ISD = 1A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
Switching Waveforms and Test Circuit
Ω
DN2535/DN2540
Package ID (continuous)* ID (pulsed) Power Dissipation
θθ
θθ
θ
jc
θθ
θθ
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-92 120mA 500mA 1.0W 125 170 120mA 500mA
TO-220 500mA 500mA 15.0W 8.3 70 500mA 500mA
TO-243AA 170mA 500mA 1.6W (TA = 25°)†15 78†170mA 500mA
* ID (continuous) is limited by max rated Tj.
† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. TA = 25°C
Thermal Characteristics
3
Output Characteristics
0.5
0.4
0.3
0.2
0.1
0
080
160 240 320 400
V
DS
(volts)
Transconductance vs. Drain Current Power Dissipation vs. Temperature
0 15010050
10
20
0
1257525
TO-220
TO-92
TO-243AA
VGS = 1.0V
0.5V
-0.5V
-1.0V
0V
Saturation Characteristics
250
200
150
100
50
0
0123 54
VGS = 1.0V
0.5V
0V
-0.5V
-1.0V
Maximum Rated Safe Operating Area
1 100010010
1
0.1
0.01
0.001
TO-92/TO-220 (pulsed)
SOT-89 (DC)
TC = 25°C
(TA = 25°C) TO-220 (DC)
TO-92 (DC)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
0
TO-243AA
T
A
= 25°C
P
D
= 1.6W
0.5
0.4
0.3
0.2
0.1
0
0 25050 100 150 200
V
DS
= 10V
TA = -55°C
TA = 25°C
TA = 125°C
TO-220
T
C
= 25°C
P
D
= 15W
TO-92
T
C
= 25°C
P
D
= 1.0W
(TA = 25°C)
I
D
(amperes)
I
D
(milliamps)
V
DS
(volts)
G
FS
(siemens)
I
D
(milliamps) T
C
(°C)
P
D
(watts)
V
DS
(volts)
I
D
(amperes)
t
p
(seconds)
DN2535/DN2540
Typical Performance Curves
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
12/13/010
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
BV
DSS
Variation with Temperature
BV
DSS
Normalized
1.1
1.05
1.0
0.95
0.9
-50 080160 240 320 4000 50 100 150
Transfer Characteristics
V
GS
(Volts)
V
DS
(Volts)
I
D
(amperes)
0.40
0.32
0.24
0.16
0.08
0
-3 2 -1 012
Capacitance Vs. Drain-to-Source Voltage
C (Picofarads)
200
150
100
50
0
010
20 30 40
V
GS
= -5V V
GS
= 0V
V
DS
= 10V
V
GS
= -10V
C
OSS
C
RSS
C
ISS
T
A
= -55°C
T
A
= 25°CR
DS (ON)
@ I
D
= 120mA
V
GS(OFF)
@ 10µA
V
DS
= 20V
V
DS
= 40V
200pF
170pF
T
A
= 125°C
On-Resistance vs. Drain Current
100
80
60
40
20
0
Q
C
(Nanocoulombs)
R
DS(on)
(Ohms)
-50 0 50 100 150
0 0.4 0.8 1.2 1.6 2.0
V
GS(off)
and R
DS
Variation with Temperature
2.5
2
1.5
1
0.5
0
15
10
5
0
-5
T
j
(°C)
Normalized
Gate Drive Dynamic Characteristics
V
GS
(Volts)
T
j
(°C) I
D
(milliamps)
DN2535/DN2540
Typical Performance Curves