-- TEXAS INSTR LOPTO? be DE ere1725 oo3b593 0 i - . ~ } 4726 TEXAS INSTR COPTO) _ 7 62C 36593 D eee" et 7-3 3 -(3 . 2N5301, 2N5302, 2N5303 N-P-N SILICON POWER TRANSISTORS FEBRUARY 1969 REVISED OCTOBER 1984 Designed for Complementary Use With 2N4398, 2N4399 200 W at 25C Case Temperature 30 A Continuous Collector Current (2N5301, 2N5302) 20 A Continuous Collector Current (2N5303) 50 A Peak Collector Current Min fr of 2 MHz at 10 V,1A Suitable for Use in Power Amplifier and High-Speed Switching Applications device schematic TO-3 PACKAGE 2 > > 3 Qa 2 N THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE i absolute maximum ratings at 25 C case temperature (unless otherwise noted) 2N5301 2N5302 2N5303 *Collactor-base voltage 40V 60V soVv current current current at case temperature at temperature t at case temperature storage temperature range NOTES: 1. This value applies forty < 0.3 ms, duty cycle < 10%. 2. Derate linearly to 200C case temperature at the rate of 1.14 W/C. 3. Derate linearly to 200C free-air temperature at the rate of 28-6 mW/C. "JEDEC registered data. a "289 TEXAS 2-25 . : INSTRUMENTS POST OFFICE BOX 225012 DALLAS. TEXAS 75265 " | _TEXAS INSTR LOPTOT be DE Beten7e. oo3nss 1 i 2N5301, 2N5302, 2N5303 N-P-N SILICON POWER TRANSISTORS 8961726 TEXAS INSTR (GPTO) 62C 36594 7 3345 D PARAMETER 'cBo ICEO TEST CONDITIONS electrical characteristics at 25C case temperature (unless otherwise noted) and N = See Notes 4 and 5 s. Q @ 77) See Notes 4 and 5 VcEtsat} See Notes 4 and 5 NOTES: 4. These parameters must be measured using pulse techniques, ty = 300 ys, duty cycle < 2%. S. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. thermal characteristics PARAMETER MIN TYP MAX UNIT Resc 0.875 | C/W Rasa 35 | cw resistive-load switching characteristics at 25C case temperature PARAMETER TEST CONDITIONST MIN TYP MAX UNIT Jc = 10A, Ip, = 1A, VBEtoff) = 2V, 1 t RL = 392, SeeFigure 1 us ts fc = 110A, 1p, = 7A, ig2= -1A 2 HS tf RL = 32, See Figure 2 1 ys tT Voltage and current values shown are nominal, exact values vary slightly with transistor parameters. i 2-26 XAS a E INSTRUMENTS POST OFFICE BOX 226012 DALLAS, TEXAS 75265 (__TEXAS INSTR LOPTO} be DE Pane172t g036595 3 I 77-3315 2N5301, 2N5302, 2N5303 N-P-N SILICON POWER TRANSISTORS wae . PARAMETER MEASUREMENT INFORMATION . 490 H1V=--5 32 / . \ INPUT -2V ' OUTPUT - os J q 10% OUTPUT 30% TEST CIRCUIT VOLTAGE WAVEFORMS INPUT FIGURE 1. RESISTIVE-LOAD SWITCHING RISE TIME OV HIV OM 90% 30 ' INPUT 9V eee - LS OUTPUT {tt 10.9 ta! INPUT spt Pion 2N3262 ! OUTFUT 2N Devices -4V NC TEST CIRCUIT VOLTAGE WAVEFORMS FIGURE 2. RESISTIVE-LOAD SWITCHING STORAGE AND FALL TIMES NOTES: A. The input waveforms are supplied by a generator with the following characteristics: t; < 20ns, t 20 ns, Zout = 502, ty = 10ys to 100 ys, duty cycle < 2%. . Waveforms are monitored on an oscilloscope with the following characteristics: tp < 20ns, Rin 2 10k, Cip < 11.5 pF. . Resistors must be noninductive types. . The d-c power supplies may require additional bypassing in order to minimize ringing. gon 3 , . - wy TEXAS 9.27 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 ca - . _. . . "8961726 TEXAS INSTR COPTO) ~~ _- e2c 360595 oYTEXAS INSTR LOPTO} ree 8961726 TEXAS INSTR COPTO) be DE jsce2 72 OOSL59b [ 62C 36596 OD | COLLECTOR CURRENT oe ne 7-33-is 2N5301, 2N5302, 2N5303 N-P-N SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS . 2N5301, 2N5302 2N5303 STATIC FORWARD CURRENT TRANSFER RATIO STATIC FORWARD CURRENT TRANSFER RATIO vs vs COLLECTOR CURRENT g 100 9 100 & Vce=2V & Voce = CE To = 25C s 8 Te = 25C B 80 4 % 0 4 and s x le 60 60 5 5 oO Q 7 v N 5 a 3 40 3 40 = : f Oo 2 g & 20 & 20 ase I } : Qo wi uw oO vay wa : o * 0 =o 02 0.4 1 4 10 40 0.2 0.4 1 4 10 20 Ic Collector Current A le Collector Current A FIGURE 3 FIGURE 4 BASE-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE vs vs 22 COLLECTOR CURRENT . 7 COLLECTOR CURRENT 1.4 oe aL vee ay apt 1 Tc = 25C 6 12|_ = > 18 > iB ' 16 See Notes 4 and S 5 Te = 25C / zB E 1 | See Notes 4 and 5 o14 $ 5 / 5 1.2 5 08 1 E ui w 0.6 808 S a 8 ; 06 = 04 | 0.4 oc . Uy > | 0.2 0.2 3 LH wo aa 0 yoo 02 04 71 4 10 40 > O02 O04 1 4 10 40 ic Collector Current A i Collector Current A FIGURE 5 FIGURE 6 NOTES: 4. These parameters must be measured using pulse techniques, ty, = 300 ys, duty cycle < 2%. 5, These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. \ 2-28 XAS E INSTRUMENTS POST OFFICE BOX 226012 DALLAS, TEXAS 75265TEXAS INSTR {OPTO} b2 DE Bece172n o03b597 7 i | ccc : - _ 8961726 TEXAS INSTR COPTO>) 62C 36597 0D | 7-83+155 2N5301, 2N5302, 2N5303 N-P-N SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING AREA 2N5301, 2N5302 ~ 2N5303 FORWARD-BIAS SAFE OPERATING AREA ' FORWARD-BIAS SAFE OPERATING AREA Tc= c Tc= i < DC Operation < " 2 i DC Operation 2 5 s ay 6 , { o 4 2 2N5301 2 2N5302 2 > @ . a 1 4 10 40 100 1 4 10 40 100 - VceE Collector-Emitter Voltage - V VcE Collector-Emitter Voltage V < FIGURE 7 FIGURE 8 . THERMAL INFORMATION DISSIPATION DERATING CURVE PEAK -POWER COEFFICIENT CURVE | 220 1 ec 3 200 0.7 Duty g 180 0.4 2 160 E (25%) 8 = = 140 02 120 8 0.10 (10%) g 100 3 0.1 3 0.07 80 x E 60 & 0.04 Ke 1- | E 40 wv 4 elty/dz) 0.02F 0.01 ty = Pulse duration in ms = 20 = Duty cycle ratio r 0 0.01 T = Thermal time constant = 4.4 ms 0 25 50 75 100 125 150 175 200 0.02004 0.1 o4 1 4 10 20 Tc Case Temperature C tyPulse Durationms FIGURES . FIGURE 10 t | 283 . ' . i ' TEXAS i 2-29 INSTRUMENTS POST OFFICE BOX 226012 @ DALLAS. TEXAS 75265 |