Formosa MS LL4150
Formosa MS 1
High-speed switching diode
Features
1. Small surface mounting type
2. High reliability
3. High forward current capability
Applications
High speed switch and general purpose use in computer and industrial applications
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25? Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage VRRM 50 V
Reverse voltage VR 40 V
Peak forward surge current tp=1µs IFSM 4 A
Forward current IF 600 mA
Average forward current VR=0 IFAV 300 mA
Power dissipation PV 500 mW
Junction temperature Tj 175 ?
Storage temperature range Tstg -65~+175
?
Maximum Thermal Resistance
Tj=25? Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mm×50mm×1.6mm RthJA 500 K/W
Formosa MS LL4150
Formosa MS 2
Electrical Characteristics
Tj=25? Parameter Test Conditions Type Symbol
Min
Typ
Max
Unit
IF=1mA VF 0.54
0.62
V
IF=10mA VF 0.66
0.74
V
IF=50mA VF 0.76
0.86
V
IF=100mA VF 0.82
0.92
V
Forward voltage
IF=200mA VF 0.87
1.0
V
VR=50V IR 100
nA Reverse current VR=50V, Tj=150? IR 100
µA
Diode capacitance VR=0, f=1MHz, VHF=50mV CD 2.5
pF
Reverse recovery time IF= IR=10…100mA, iR=1mA,
RL=100O trr 4 ns
Dimensions in mm
Cathode band
Glass Case
Mini Melf / SOD 80
JEDEC DO 213 AA
