● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
2N7000
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Complementary N- and P-Channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
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General Description
The Supertex 2N7000 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device Package
Option
BVDSS/BVDGS
(V)
RDS(ON)
(max)
(Ω)
ID(ON)
(min)
(mA)
2N7000-G TO-92 60 5.0 75
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±30V
Operating and storage temperature -55°C to +150°C
Soldering temperature* +300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Pin Configuration
N-Channel Enhancement-Mode
Vertical DMOS FETs
-G indicates package is RoHS compliant (‘Green’)
GATE
SOURCE
DRAIN
TO-92
TO-92
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
2 N
7000
Y Y W W
2
2N7000
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Electrical Characteristics (TA = 25°C unless otherwise specified)
Sym Parameter Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 10µA
VGS(th) Gate threshold voltage 0.8 - 3.0 V VGS = VDS, ID = 1.0mA
IGSS Gate body leakage current - - 10 nA VGS = ±15V, VDS = 0V
IDSS Zero gate voltage drain current
- - 1.0 µA VGS = 0V, VDS = 48V
- - 1.0 mA VGS = 0V, VDS = 48V,
TA = 125OC
ID(ON) On-state drain current 75 - - mA VGS = 4.5V, VDS = 10V
RDS(ON)
Static drain-to-source
on-state resistance
- - 5.3 ΩVGS = 4.5V, ID = 75mA
- - 5.0 VGS = 10V, ID = 500mA
GFS Forward transconductance 100 - - mmho VDS = 10V, ID = 200mA
CISS Input capacitance - - 60
pF VGS = 0V, VDS = 25V,
f = 1.0MHz
COSS Common source output capacitance - - 25
CRSS Reverse transfer capacitance - - 5
t(ON) Turn-on time - - 10 ns VDD = 15V, ID = 500mA,
RGEN = 25Ω
t(OFF) Turn-off time - - 10
VSD Diode forward voltage drop - 0.85 - V VGS = 0V, ISD = 200mA
Notes:
All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
1.
2.
Switching Waveforms and Test Circuit
Thermal Characteristics
Package
ID
(continuous)†
(mA)
ID
(pulsed)
(mA)
Power Dissipation
@TC = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
†
(mA)
IDRM
(mA)
TO-92 200 500 1.0 125 170 200 500
Notes:
† ID (continuous) is limited by max rated Tj.
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tF
tr
INPUT
INPUT
OUTPUT
10V
V
DD
RGEN
0V
0V
3
2N7000
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Typical Performance Curves
Output Characteristics
2.5
2.0
1.5
1.0
0.5
0 10 20 30 5040
VDS (volts)
ID)serepma(
Saturation Characteristics
0 2 4 6 108
VDS (volts)
ID)serepma(
Maximum Rated Safe Operating Area
0.1 100101.0
0.01
0.1
1.0
0.001
VDS (volts)
ID)serepma(
Thermal Response Characteristics
)de
z
il
amr
on( e
c
natsiseR lam
reh
T
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
tp(seconds)
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
0 1.00.2 0.4 0.6 0.8
GS
F)
s
ne
m
eis(
ID(amperes)
Power Dissipation vs. Case Temperature
0 15010050
2.0
1.0
1257525
PD)sttaw(
TO-92
T
A
= -55OC
25OC
125OC
V
DS
V
DS
= 25V
TO-92 (pulsed)
8V
6V
4V
VGS =10V
0
0
0
8V
6V
4V
2.5
2.0
1.5
1.0
0.5
0
TO-92 (DC)
TC = 25
O
C
TO-92
P
D
= 1W
T
C
= 25OC
TC(
O
C)
V
GS
= 10V
4
2N7000
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Typical Performance Curves (cont.)
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
SG
)st
l
ov(
T
j
(OC)
V
)h
t
(S
G
)dezilamron(
R
)
NO
(S
D
)d
ez
ilam
r
on
(
V
(th)
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
R
)
NO
(SD
)smho(
V
B
SSD
)
dezi
l
amr
o
n
(
T
j
(OC)
Transfer Characteristics
V
GS
(volts)
I
D
)serepm
a
(
I
D
(amperes)
BV
DSS
Variation with Temperature
0246810
2.5
2.0
1.5
1.0
0.5
-50 0 50 100 150
1.1
1.0
0.9
0
0 2.51.0
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0 0.2 0.4 0.6 0.8 1.0
-50 0 50 100 150
VDS = 10V
V(th) @ 1mA
VGS = 4.5V
VGS = 10V
0.5 1.5 2.0
1.0
2.0
3.0
5.0
4.0
TA= -55
O
C�
25
O
C
125
O
C
0
40 pF
40V
80 pF
0
1.9
1.6
1.3
1.0
0.7
0.4
VDS = 25V
Capacitance vs. Drain-to-Source Voltage
100
)
sdaraf
o
c
i
p
(
C
V
DS
(volts)
0 10 20 30 40
75
50
25
0
f = 1MHz
CISS
C
OSS
CRSS
RDS @ 10V, 1.0A
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com.
©2008 All rights reserved. Unauthorized use or reproduction is prohibited.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
5
2N7000
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-2N7000
B091008
3-Lead TO-92 Package Outline (N3)
Symbol A b c D E E1 e e1 L
Dimensions
(inches)
MIN .170 .014†.014†.175 .125 .080 .095 .045 .500
NOM - - - - - - - - -
MAX .210 .022†.022†.205 .165 .105 .105 .055 .610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version D080408.
Seating Plane
1
2
3
Front View Side View
Bottom View
E1 E
D
e1
L
e
c
1 2 3
b
A
