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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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KSD471A — NPN Epitaxial Silicon Transistor
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSD471A Rev. 1.1.0 1
March 2013
KSD471A
NPN Epitaxial Silicon Transistor
Features
• Audio Frequency Power Amplifier
• Complement to KSB564A
• Collector Current: IC = 1 A
• Collector Power Dissipation: PC = 800 mW
• Suffix "-C" means Center Collector
(1. Emitter 2. Collector 3. Base)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Ratings Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter -Base Voltage 5 V
ICCollector Current 1 A
PCCollector Power Dissipation 800 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 to +150 °C
1. Emitter 2. Base 3. Collector
TO-92
1
KSD471A — NPN Epitaxial Silicon Transistor
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSD471A Rev. 1.1.0 2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
hFE Classification
Symbol Parameter Test Condition Min. Typ. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 40 V
BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V
BVEBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 5 V
ICBO Collector Cut-off Current VCB = 30 V, IE = 0 0.1 μA
hFE DC Current Gain VCE = 1 V, IC = 100 m A 120 400
VCE (sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 0.1 A 0.5 V
VBE (sat) Base-Emitter Saturation Voltage IC = 1 A, IB = 0.1 A 1.2 V
fTCurrent Gain BandWidth Product VCE = 6 V, IC = 10 mA 130 MHz
Cob Output Capacitance VCB = 6 V, IE = 0,
f = 1 MHz 16 pF
Classification Y G
hFE 120 ~ 240 200 ~ 400
KSD471A — NPN Epitaxial Silicon Transistor
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSD471A Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacita nce
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
012345678910
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IB = 5.0mA
IB = 4.5mA
IB = 4.0mA
IB = 3.0mA
IB = 3.5mA
IB = 2.5mA
IB = 1.5mA
IB = 1.0mA
IB = 2.0mA
IB = 0.5mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
1 10 100 1000
1
10
100
1000
VCE=1.0V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
110100
1
10
100 f = 1MHz
IE=0
Cob[pF], CAPACITANCE
VCB [V], COLLECTOR-BASE VOLTAGE
1 10 100 1000
1
10
100
1000 VCE = 6V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
0.01
0.1
1
10 1.TC=25oC
2.Single pulse
200ms
100
10
1
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTO R- EMITTER VOLTAGE
KSD471A — NPN Epitaxial Silicon Transistor
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSD471A Rev. 1.1.0 4
Physical Dimensions
Figure 7. 3LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may chan ge in any manner
without notic e. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the ter ms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild produ cts.
Always visit Fairchild Semiconduct or’s online packaging are a for the most recent package drawings :
http://www.fairchildsemi.com/packaging/.
D
TO-92
®
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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