2002. 6. 14 1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP31CF
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
FEATURES
·Complementary to TIP32CF.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.700.30
0.85 MAX
3.200.20
3.000.30
A
B
C
D
E
F
G12.30 MAX
0.75 MAX
H
13.600.50
3.90 MAX
1.20
1.30
2.54
4.500.20
6.80
2.600.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
123
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.600.15
V
U
D
AC
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Emitter Sustaining Voltage VCEO(SUS) IC=30mA, IB=0 100 - - V
Collector Cut-off Current ICEO VCE=60V, IB=0 - - 0.3 mA
Collector Cut-off Current ICES VCE=100V, VEB=0 - - 200 μA
Emitter Cut-off Current IEBO VBE=5V, IC=0 - - 1 mA
DC Current Gain hFE
VCE=4V, IC=1A 25 - -
VCE=4V, IC=3A 10 - 50
Collector-Emitter Saturation Voltage VCE(sat) IC=3A, IB=375mA - - 1.2 V
Base-Emitter On Voltage VBE(on) VCE=4V, IC=3A - - 1.8 V
Transition Frequency fTVCE=10V, IC=500mA f=1MHz 3.0 - - MHz
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current
DC IC3
A
Pulse ICP 5
Base Current IB1 A
Collector Power
Dissipation
Ta=25℃PC
2 W
Tc=25℃25 W
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55~150 ℃