896 282. a4 PHILIPS INTERNATIONAL SBE > MM 7310826 OO4ebIO 3} ME PHIN Philips Semiconductors T- 2 5~ OF Data sheet 2N2646 th ops an . J ee __[Protninary sects"! Silicon unijunction transistor date of issue | December 1990 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX, UNIT Vege amitter-base 2 voltage - - 30 v leg emitter current peak value - - 2 A Pr total power dissipation - - 300 mW Ty, Junction temperature - ~ 125 C Pog Static inter-base resistance Vee) = 3 V - 7 - kQ =O Veptent emitter-base 1 saturation voltage Viet = 10V - 3.5 - v I, =50 mA lean emitter valley point current 4 6 - mA ew) emitter peak point current - 1 5 pA PINNING - TO-18 PIN CONFIGURATION Base 2 connected to case. PIN DESCRIPTION emitter 2 jbase1 3 | base2 wy | SS by 3 MBBISS MSB031 Fig.1 Simplified outline and symbol. 733Philips Semiconductors ew Silicon unfjunction transistor SKE D MM 7110826 004261) 578 MMPHIN ene ee PHILIPS INTERNATIONAL Preliminary specification 2N2646 LIMITING VALUES T- 25-09 In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN, MAX. UNIT ~Vepe amitter-oase 2 voltage - 30 Vv Veont inter-base voltage - 35 V le emitter current average value - 50 mA lew emitter current (note 1) peak value - 2 A Pra total power dissipation (note 2) Tab S25 C ~ 300 mW Tag storage temperature range ~65 150 G T, Junction temperature - 425 C Notes 1. Capacitor discharge < 10 pF at < 90 V. 2. Must be flmited by external circult, 400 Prot (mW) 300 200 100 0 50 100 150 Tamb (C) Fig.2 Power derating curve. THERMAL RESISTANCE SYMBOL PARAMETER VALUE UNIT Ry ta from Junction to amblent 300 KW December 1990 734 AEE ey PAW ye PU yupPhilips Semiconductors Preliminary specification Silicon unijunction transistor 2N2646 PHILIPS INTERNATIONAL SBE D MM 7130826 OO4eb,2 YOY MBPHIN CHARACTERISTICS t- Tar = 25 C unless otherwise specified. 25-09 SYMBOL PARAMETER CONDITIONS MIN, | TYP | MAX. | UNIT Reg static inter-base resistance Veo = 3 V 47 7 9.1 kQ le = 0 TCass inter-base resistance temperature Veet = 3 V 0.1 - 0,9 el coefficient Ip =0 Tans = ~85 to 125 C lege0 amitter cut-off current ~Veg = 30 V - - 12 Vv tg = 0 Vesisat emitter-base 1 saturation voltage Veo = 10 V - 3.5 ~ V [E=50 mA laomed inter-base current modulation Ving = 10 V - 15 - mA p= 50 mA n input/output ratio (note 1) Veon) = 10V 0.56 - 0.75 ley emitter valley point current Vaegs = 20 V 4 6 - mA Rep = 100.2 le emitter peak point current Vasa = 25 V - 1 5 pA Voaim base 1 Impulse/output vollage 3 5 - Vv Note 1. n= (Vee, - Veen) V Ret (approximately 0.5 V at 10 A), and Ving, = inter-base voltage. , whan Vee, = emitter peak point voltage, Ves, = emitter-base 1 breakdown voltage, Vegi ak point VE(P) pear p VEBt ect | Agty p20 YE(V) (a EBy characteristic | at Ig2 = 0 ~les20 Te(p) Tey) Ig MCE445 Fig.3 impulse as a function of output voltage. Fig.4 Impulse output circuit. December 1990 735Philips Semiconductors Silicon unijunction transistor Preliminary specification 2N2646 Dimensions in mm. ei 5.3 max min MSATI9 Fig.5 TO-18. ee. T25~09 - SBE ) MM 7110826 GO4eb1L3 340 mp ome ee HIN December 1990 736 sup yt i {EW Wf phd | | ME | mW yee : LAR] yt I