1
3
2
Dual Series Switching Diode
LBAV99LT1G
SOT–23
3
CAHODE/ANODE
1
ANODE 2
CATHODE
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse V oltage V R70 Vdc
Forward Current I F215 mAdc
Peak Forward Surge Current I FM(surge) 500 mAdc
Repetitive Peak Reverse V oltage V RRM 70 V
Average Rectified Forward Current (1) IF(AV) 715 mA
(averaged over any 20 ms period)
Repetitive Peak Forward Current I FRM 450 mA
Non–Repetitive Peak Forward Current I FSM A
t = 1.0 µ s2.0
t = 1.0 ms 1.0
t = 1.0 S 0.5
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation P D225 mW
FR–5 Board, (1) T A= 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance Junction to Ambient R θJA 556 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate, (2) T A= 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J, T stg –65 to +150 °C
ELECTRICAL CHARACTERISTICS (T A= 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I (BR) = 100 µA) V (BR) 70 — Vdc
Reverse Voltage Leakage Current (V R= 70 Vdc) I R— 2.5 µAdc
(V R= 25 Vdc, T J= 150°C) –– 30
(V R= 70 Vdc, T J= 150°C) –– 50
Diode Capacitance CD— 1.5 pF
(V R= 0, f = 1.0 MHz)
Forward Voltage (I F= 1.0 mAdc) V F–– 715 mVdc
(I F= 10 mAdc) — 855
(I F= 50 mAdc) –– 1000
(I F= 150 mAdc) –– 1250
Reverse Recovery T ime
(I
F
= I
R
= 10 mAdc, i
R(REC)
= 1.0 mAdc, R
L
= 100Ω ) (Figure 1)
t rr — 6.0 ns
Forward Recovery V oltage
(I F= 10 mA, t r= 20 ns) VFR — 1.75 V
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
.LBAV99LT1G
LBAV99LT3G
A7 3000 Tape & Reel
10000 Tape & Reel
Device Marking Shipping
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LESHAN RADIO COMPANY, LTD.
1/3
A7
• We declare that the material of product
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