SIEMENS PNP Silicon AF Transistors Features @ For AF driver and output stages @ High collector current @ Low collector-emitter saturation voltage @ Complementary types: BCX 54 ... BCX 56 (NPN) BCX 51... BCX 53 2 PS05162 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 BCX 51 AA Q62702-C 1847 B Cc E | SOT-89 BCX 51-10 AC Q62702-C1831 BCX 51-16 AD Q62702-C1857 BCX 52 AE Q62702-C1743 BCX 52-10 AG Q62702-C 1744 BCX 52-16 AM Q62702-C 1900 BCX 53 AH Q62702-C905 BCX 53-10 AK Q62702-C1753 BCX 53-16 AL Q62702-C1502 1) For detailed information see chapter Package Outlines. Semiconductor Group 889 04.96SIEMENS BCX 51... BCX 53 Maximum Ratings Parameter Symbol Values Unit BCX 51 |BCX52 |BCX53 Collector-emitter voltage Vceo 45 60 80 Vv Collector-base voltage Vewo 45 60 100 Emitter-base voltage Vewo 5 5 5 Collector current Ic 1 A Peak collector current Tom 1.5 Base current Ip 100 mA Peak base current Jem 200 Total power dissipation, Ts = 130 C | Pro 1 WwW Junction temperature Tj 150 Cc Storage temperature range Tstg ~ 65 ... + 150 Thermal Resistance Junction - ambient) Rin sa < 756 KAW Junction - soldering point Ris <20 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mmv6 cm? Cu. Semiconductor Group 890SIEMENS BCX 51... BCX 53 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. DC characteristics Cotlector-emitter breakdown voltage Viaryceo Vv Ic=10mA BCX 51 45 _ - BCX 52 60 - _ BCX 53 80 ~ - Collector-base breakdown voltage Vieaycao Ic = 100 pA BCX 51 45 _ - BCX 52 60 - - BCX 53 100 | - ~- Emitter-base breakdown voltage Verjeso | 5 - - fe=10pA Collector cutoff current Icao Ves = 30 V ~ - 100 nA Ves = 30 V, Ta= 150C - - 20 pA Emitter cutoff current Teeo - - 20 nA Ves=4V DC current gain) Are - Ice= 5mA, Vee=2V 25 - - Ic=150 mA, Vee=2V BCX 51, BCX 52, BCX 53 40 - 250 BCX 51-10, BCX 52-10, BCX 53-10 63 100 160 BCX 51-16, BCX 52-16, BCX 53-16 100 160 250 Ic = 500 mA, Vee =2V 25 - - Collector-emitter saturation voltage) Vecsat - - 0.5 v Ic = 500 mA, Je = 50 mA Base-emitter voltage) Vee - - 1 Ic = 500 mA, Vee = 2 V AC characteristics Transition frequency f - 125 - MHz Ic = 50 mA, Vee = 10 V, f= 20 MHz ) Pulse test: 15 300 us, D = 2%. Semiconductor Group 891SIEMENS BCX 51... BCX 53 Total power dissipation Pio = f (Ta"; Ts) * Package mounted on epoxy BCX 51...53 EHPOO4IE 0.05 50 100. C ART 150 Permissible pulse load Pict max/Prapc = f (tp) P tot mox 5 Prot oc CH ill! 8 Ht mm ost 107 nM NN rit coe A | Sul atl Billi A A) WU hs Se 107 1075 1074 a 10? s 10 fy Semiconductor Group Collector current Jc = f (Vee) Vee=2V HP00437 19 4 Box S183 mA Ie 0 02 04 O06 O8 1.0 V 1.2 _~ Transition frequency fi = f (Ic) Vee = 10 V 5 8CX_51...55 EHPOOL39 10 MHz 5 f 102 40! mA 105 5 10? ~ |, 10 5 10! 892SIEMENS BCX 51... BCX 53 DC current gain hre = f (/c) Vee=2V 3 BCX _5!...53 10 5 fee 02 10! 10 10 89510! 510? 5105 mA 104 c Collector cutoff current {ceo = f (Ts) Vea = 30 V 104 SLES HPO? nA Tega 193 5 10? 5 C 150 0 50 100 Semiconductor Group Collector-emitter saturation voitage Ic = f (Veesat) hre = 10 i ot BCX 51...53 EHP00441 mA 10 5 107 5 10! 5 10 0 0.2 0.4 0.6 V 0.8 Veg sat Base-emitter saturation voltage Ic = f (Vetsat) here = 10 194 8X5" EHPOO443 mA Le 10 5 0 62 0.4 06 0.8 1.0 V 1.2 Vor sot 893