TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP110 / TIP111 / TIP112 Rev. 1.1.0
November 2014
TIP110 / TIP111 / TIP112
NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Constructi on with Built-in Base -Emitte r
Shunt Resistors
• Complementary to TIP115 / TIP116 / TIP117
• High DC Current Gain:
hFE = 1000 @ VCE = 4 V, IC = 1 A (Minimum)
• Low Collector-Emitter Saturation Voltage
• Industr ial Use
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating co nd iti ons an d s tres si ng the parts to these levels is not recommended. In add i-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP110 TIP110 TO-220 3L (Single Gauge) Bulk
TIP110TU TIP110 TO-220 3L (Single Gauge) Rail
TIP111TU TIP111 TO-220 3L (Single Gauge) Rail
TIP112 TIP112 TO-220 3L (Single Gauge) Bulk
TIP112TU TIP112 TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage TIP110 60 VTIP111 80
TIP112 100
VCEO Collector-Emitter Voltage TIP110 60 VTIP111 80
TIP112 100
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 2 A
ICP Collector Current (Pulse) 4 A
IBBase Current (DC) 50 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
Equivalent Circuit
B
E
C
R1 R2
R1 10kΩ≅
R2 0.6kΩ≅
TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP110 / TIP111 / TIP112 Rev. 1.1.0 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics(1)
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TA = 25°C) 2 W
Collector Dissipation (TC = 25°C) 50
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage
TIP110 IC = 30 mA, IB = 0 60 V TIP111 80
TIP112 100
ICEO Collector Cut-Off Current TIP110 VCE = 30 V, IB = 02
mA TIP111 VCE = 40 V, IB = 02
TIP112 VCE = 50 V, IB = 02
ICBO Collector Cut-Off Current TIP110 VCB = 60 V, IE = 0 1 mA TIP111 VCB = 80 V, IE = 0 1
TIP112 VCB = 100 V, IE = 0 1
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 2 mA
hFE DC Current Gain VCE = 4 V, IC = 1 A 1000
VCE = 4 V, IC = 2 A 500
VCE(sat) Collector-Emitter Saturation Voltage IC = 2 A, IB = 8 mA 2.5 V
VBE(on) Base-Emitter On Voltage VCE = 4 V, IC = 2 A 2.8 V
Cob Output Capacitance VCB = 10 V, IE = 0,
f = 0.1 MHz 100 pF
TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP110 / TIP111 / TIP112 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
012345
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IB = 4 00 μA
IB = 450μA
IB = 500μA
I
B
= 350
μ
A
I
B
= 300μA
I
B
= 250
μ
A
IB = 200μA
IB = 150μA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.01 0.1 1 10
10
100
1000
10000
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.1
1
10
100
IC = 500 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10 100
1
10
100
1000
f = 0.1 MHz
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
1 10 100
0.1
1
10
1mS
5mS
DC
TIP 110
TIP 111
TIP 112
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP110 / TIP111 / TIP112 Rev. 1.1.0 4
Physical Dimensions
Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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