CBCP68 NPN
CBCP69 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
SMALL SIGNAL TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBCP68 and
CBCP69 are complementary silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
applications requiring high current capability.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Emitter Voltage VCES 25 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 1.0 A
Peak Collector Current ICM 2.0 A
Continuous Base Current IB 100 mA
Peak Base Current IBM 200 mA
Power Dissipation PD 2.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 62.5 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=25V 10 µA
ICBO V
CB=25V, TA=150°C 1.0 mA
IEBO V
EB=5.0V 10 µA
BVCBO I
C=10µA 25 V
BVCEO I
C=10mA 20 V
BVEBO I
E=1.0µA 5.0 V
VCE(SAT) I
C=1.0A, IB=100mA 0.5 V
VBE(ON) V
CE=10V, IC=5.0mA 0.6 V
VBE(ON) V
CE=1.0V, IC=1.0A 1.0 V
hFE V
CE=10V, IC=5.0mA 50
hFE V
CE=1.0V, IC=500mA 85 375
hFE V
CE=1.0V, IC=1.0A 60
fT V
CE=5.0V, IC=10mA, f=20MHz 65 MHz
Cob VCB=5.0V, IE=0, f=450kHz 25 pF
SOT-223 CASE
R6 (4-August 2017)
www.centralsemi.com
CBCP68 NPN
CBCP69 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
SMALL SIGNAL TRANSISTORS
LEAD CODE:
1) Base
2) Colllector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
SOT-223 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R6 (4-August 2017)
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
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