140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1003
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
DESCRIPTION:DESCRIPTION:
The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor
designed primarily for VHF, FM communications. Diffused
emitter resistors provide high VSWR capability under rated
operating conditions. Internal impedance matching ensures
optimum power gain and efficiency over the 136-175 MHz band.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Collector-Base Voltage 36 V
V
Collector-Emitter Voltage 18 V
VCES Collector-Emitter Voltage 36 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 20 A
PDISS Power Dissipation 270 W
TJ Junction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal DataThermal Data
RTH(J-C)
Junction-case Thermal Resistance
0.65 °°C/W
Features
• 175 MHz
• 12.5 VOLTS
• POUT = 100 WATTS
• GP = 6.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION