The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ687
SWITCHING
P-CHANNEL POWER MOSFET
DATA SHEET
Document No. D18719EJ2V0DS00 (2nd edition)
Date Published May 2007 NS
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
FEATURES
• Low on-state resistance
R
DS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
R
DS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A)
RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A)
• 2.5 V drive available
• Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER LEAD PLATING PACKING PACKAGE
2SJ687-ZK-E1-AY Note
2SJ687-ZK-E2-AY Note Pure Sn (Tin) Tape 2500 p/reel TO-252 (MP-3ZK)
0.27 g TYP.
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS −20 V
Gate to Source Voltage (VDS = 0 V) VGSS m12 V
Drain Current (DC) (TC = 25°C) ID(DC) m20 A
Drain Current (pulse) Note1 ID(pulse) m60 A
Total Power Dissipation (TC = 25°C) PT1 36 W
Total Power Dissipation (TA = 25°C) PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 IAS −20 A
Single Avalanche Energy Note2 EAS 40 mJ
Notes 1. PW ≤ 10
μ
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −10 V, RG = 25 Ω, VGS = −12 → 0 V
(TO-252)
Data Sheet D18719EJ2V0DS
2
2SJ687
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −10
μ
A
Gate Leakage Current IGSS VGS = m12 V, VDS = 0 V m100 nA
Gate to Source Cut-off Voltage VGS(off) VDS = −10 V, ID = −1 mA −0.6 −1.2 −1.45 V
Forward Transfer Admittance Note | yfs | VDS = −10 V, ID = −10 A 20 S
Drain to Source On-state Resistance Note RDS(on)1 VGS = −4.5 V, ID = −10 A 5.4 7.0 mΩ
RDS(on)2 VGS = −3.0 V, ID = −10 A 7.1 9.0 mΩ
RDS(on)3 VGS = −2.5 V, ID = −10 A 10.8 20 mΩ
Input Capacitance Ciss VDS = −10 V, 4400 pF
Output Capacitance Coss VGS = 0 V, 1070 pF
Reverse Transfer Capacitance Crss f = 1 MHz 760 pF
Turn-on Delay Time td(on) VDD = −10 V, ID = −10 A, 36 ns
Rise Time tr VGS = −4.5 V, 220 ns
Turn-off Delay Time td(off) RG = 3 Ω 270 ns
Fall Time tf 310 ns
Total Gate Charge QG VDD = −16 V, 57 nC
Gate to Source Charge QGS VGS = −4.5 V, 12 nC
Gate to Drain Charge QGD ID = −20 A 28 nC
Body Diode Forward Voltage Note VF(S-D) IF = −20 A, VGS = 0 V 0.85 1.5 V
Reverse Recovery Time trr IF = −20 A, VGS = 0 V, 200 ns
Reverse Recovery Charge Qrr di/dt = −100 A/
μ
s 240 nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25 Ω
50 Ω
L
V
DD
V
GS
= −12 → 0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG. R
G
0
V
GS(−)
D.U.T.
R
L
V
DD
τ = 1 s
μ
Duty Cycle ≤ 1%
V
GS
Wave Form
V
DS
Wave Form
V
GS(−)
10% 90%
V
GS
10%
0
V
DS(−)
90%90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
V
DS
0
t
on
t
off
PG.
PG.
50 Ω
D.U.T.
R
L
V
DD
I
G
= −2 mA
−
<R>
<R>
Data Sheet D18719EJ2V0DS 3
2SJ687
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0 25 50 75 100 125 150
Tch - Channel Temperature - °C
PT - Total Power Dissipation - W
0
5
10
15
20
25
30
35
40
0 25 50 75 100 125 150
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
-0.1
-1
-10
-100
-1000
-0.1 -1 -10 -100
PW = 1 ms
10 ms
I
D(pulse)
I
D(DC)
R
DS(on)
Limited
(V
GS
= −4.5 V)
T
C
= 25°C
Single Pulse
Power Dissipation Limited
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
0.01
0.1
1
10
100
1000
Rth(ch-A) = 125°C/Wi
Rth(ch-C) = 3.47°C/Wi
Single Pulse
PW - Pulse Width - s
100
μ
1 m 10 m 100 m 1 10 100 1000
Data Sheet D18719EJ2V0DS
4
2SJ687
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
0
-20
-40
-60
0-1-2-3
V
GS
= −4.5 V
−2.5 V
Pulsed
VDS - Drain to Source Voltage - V
ID - Drain Current - A
-0.0001
-0.001
-0.01
-0.1
-1
-10
-100
0 -1-2-3
V
DS
= −10 V
Pulsed
T
ch
= −55°C
−25°C
25°C
75°C
125°C
150°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VGS(off) – Gate to Source Cut-off Voltage - V
0
-0.5
-1
-1.5
-2
-75 -25 25 75 125 175
V
DS
= −10 V
I
D
= −1 mA
Tch - Channel Temperature - °C
| yfs | - Forward Transfer Admittance - S
0.01
0.1
1
10
100
-0.001 -0.01 -0.1 -1 -10 -100
V
DS
= −10 V
Pulsed
T
ch
= −55°C
−25°C
25°C
75°C
125°C
150°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
10
20
30
40
50
0-5-10-15
I
D
= −10 A
Pulsed
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
0
10
20
30
40
50
60
-0.1 -1 -10 -100
V
GS
= −2.5 V
−4.5 V
Pulsed
ID - Drain Current - A
<R>
Data Sheet D18719EJ2V0DS 5
2SJ687
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
5
10
15
-75 -25 25 75 125 175
I
D
= −10 A
Pulsed
V
GS
= −2.5 V
−4.5 V
Tch - Channel Temperature - °C
Ciss, Coss, Crss - Capacitance - pF
100
1000
10000
-0.01 -0.1 -1 -10 -100
V
GS
= 0 V
f = 1 MHz
C
rss
C
iss
C
oss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
10
100
1000
-0.1 -1 -10 -100
V
DD
= −10 V
V
GS
= −4.5 V
R
G
= 3 Ω
t
d(on)
t
r
t
d(off)
t
f
ID - Drain Current - A
VDS - Drain to Source Voltage - V
0
-5
-10
-15
-20
-25
0 102030405060
0
-1
-2
-3
-4
-5
V
DS
V
GS
I
D
= −20
A
V
DD
= −16 V
−10 V
−4 V
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
IF - Diode Forward Current - A
-0.01
-0.1
-1
-10
-100
-1.5-1-0.50
Pulsed
−4.5 V
−2.5 V V
GS
= 0 V
VF(S-D) - Source to Drain Voltage - V
trr - Reverse Recovery Time - ns
10
100
1000
10000
-0.1 -1 -10 -100
di/dt = −100 A/μs
V
GS
= 0 V
IF - Diode Forward Current - A
Data Sheet D18719EJ2V0DS
6
2SJ687
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
IAS - Single Avalanche Current - A
-1
-10
-100
0.01 0.1 1 10
Starting T
ch
= 25°C
V
DD
= −10 V
R
G
= 25 Ω
V
GS
= −12 → 0 V
I
AS
= −20 A
E
AS
= 40 mJ
L - Inductive Load - mH
Energy Derating Factor - %
0
20
40
60
80
100
120
25 50 75 100 125 150
V
DD
= −10 V
R
G
= 25 Ω
V
GS
= −12 → 0 V
I
AS
≤ −20 A
Starting Tch - Starting Channel Temperature - °C
Data Sheet D18719EJ2V0DS 7
2SJ687
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
6.5±0.2 2.3±0.10.5±0.1
0.76±0.12 0 to 0.25
0.5±0.1
1.0
No Plating
No Plating
5.1 TYP.
1.0 TYP.6.1±0.2
0.51 MIN.
4.0 MIN.0.8
10.4 MAX. (9.8 TYP.)
4.3 MIN.
1
4
23
1.14 MAX. 2.3 2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
2SJ687
The information in this document is current as of May, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
•
•
•
•
•
•
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":
