DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES * Low on-state resistance RDS(on)1 = 7.0 m MAX. (VGS = -4.5 V, ID = -10 A) RDS(on)2 = 9.0 m MAX. (VGS = -3.0 V, ID = -10 A) RDS(on)3 = 20 m MAX. (VGS = -2.5 V, ID = -10 A) * 2.5 V drive available * Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SJ687-ZK-E1-AY Note 2SJ687-ZK-E2-AY Note LEAD PLATING PACKING PACKAGE Pure Sn (Tin) Tape 2500 p/reel TO-252 (MP-3ZK) 0.27 g TYP. Note Pb-free (This product does not contain Pb in external electrode.) (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS -20 V Gate to Source Voltage (VDS = 0 V) VGSS m12 V Drain Current (DC) (TC = 25C) ID(DC) m20 A ID(pulse) m60 A PT1 36 W Drain Current (pulse) Note1 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) PT2 1.0 W Channel Temperature Tch 150 C C Tstg -55 to +150 Single Avalanche Current Note2 IAS -20 A Single Avalanche Energy Note2 EAS 40 mJ Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = -10 V, RG = 25 , VGS = -12 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18719EJ2V0DS00 (2nd edition) Date Published May 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2007 2SJ687 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 V -10 A <R> Gate Leakage Current IGSS VGS = m12 V, VDS = 0 V m100 nA <R> Gate to Source Cut-off Voltage VGS(off) VDS = -10 V, ID = -1 mA -0.6 -1.45 V | yfs | VDS = -10 V, ID = -10 A 20 RDS(on)1 VGS = -4.5 V, ID = -10 A 5.4 7.0 m RDS(on)2 VGS = -3.0 V, ID = -10 A 7.1 9.0 m RDS(on)3 VGS = -2.5 V, ID = -10 A 10.8 20 m Input Capacitance Ciss VDS = -10 V, 4400 pF Output Capacitance Coss VGS = 0 V, 1070 pF Reverse Transfer Capacitance Crss f = 1 MHz 760 pF Turn-on Delay Time td(on) VDD = -10 V, ID = -10 A, 36 ns Rise Time tr VGS = -4.5 V, 220 ns Turn-off Delay Time td(off) RG = 3 270 ns Fall Time tf 310 ns Total Gate Charge QG VDD = -16 V, 57 nC Gate to Source Charge QGS VGS = -4.5 V, 12 nC QGD ID = -20 A 28 nC VF(S-D) IF = -20 A, VGS = 0 V 0.85 Reverse Recovery Time trr IF = -20 A, VGS = 0 V, 200 ns Reverse Recovery Charge Qrr di/dt = -100 A/s 240 nC Note Forward Transfer Admittance Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note -1.2 S 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 D.U.T. L RL 50 PG. VGS = -12 0 V VDD RG PG. VGS(-) VGS Wave Form 0 VGS 10% 90% VDD VDS(-) - IAS BVDSS VDS ID VGS(-) 0 VDS Wave Form VDD Starting Tch = 1 s Duty Cycle 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 2 IG = -2 mA RL 50 VDD Data Sheet D18719EJ2V0DS VDS 90% 90% 10% 10% 0 td(on) tr td(off) ton tf toff 2SJ687 TYPICAL CHARACTERISTICS (TA = 25C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 40 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 35 30 25 20 15 10 5 0 0 0 25 50 75 100 125 0 150 25 Tch - Channel Temperature - C 50 75 100 125 150 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA -100 ID(pulse) ID(DC) -10 Po w RDS(on) Limited (VGS = -4.5 V) -1 er D PW = 1 ms is si p at io 10 ms n Li m it e d TC = 25C Single Pulse -0.1 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W ID - Drain Current - A -1000 Rth(ch-A) = 125C/Wi 100 10 Rth(ch-C) = 3.47C/Wi 1 0.1 Single Pulse 0.01 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18719EJ2V0DS 3 2SJ687 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -100 VGS = -4.5 V -40 VDS = -10 V Pulsed -10 ID - Drain Current - A ID - Drain Current - A -60 -2.5 V -20 -1 Tch = -55C -25C 25C 75C 125C 150C -0.1 -0.01 -0.001 Pulsed 0 -0.0001 0 -1 -2 -3 0 -1 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V -2 -1.5 -1 -0.5 VDS = -10 V ID = -1 mA 0 -75 -25 25 75 125 175 100 Tch = -55C -25C 10 1 25C 75C 125C 150C 0.1 0.01 -0.001 -0.01 50 ID = -10 A Pulsed 30 20 10 0 -5 -10 -15 VGS - Gate to Source Voltage - V 4 -1 -10 -100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 -0.1 VDS = -10 V Pulsed ID - Drain Current - A Tch - Channel Temperature - C 40 -3 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE <R> -2 60 Pulsed 50 40 30 20 VGS = -2.5 V 10 0 -0.1 -4.5 V -1 -10 ID - Drain Current - A Data Sheet D18719EJ2V0DS -100 2SJ687 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 15 VGS = -2.5 V 10 -4.5 V 5 ID = -10 A Pulsed Ciss, Coss, Crss - Capacitance - pF -25 25 75 125 Coss 1000 Crss VGS = 0 V f = 1 MHz 100 -0.01 0 -75 Ciss 175 Tch - Channel Temperature - C SWITCHING CHARACTERISTICS -10 -100 -25 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns -1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 td(off) tf tr 100 VDD = -10 V VGS = -4.5 V RG = 3 10 -0.1 td(on) -1 -5 VDD = -16 V -10 V -4 V -20 -4 -15 -3 VGS -10 -2 -5 -1 VDS ID = -20 A 0 -10 -100 0 0 10 20 30 40 50 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 60 10000 -4.5 V -10 VGS = 0 V -2.5 V -1 -0.1 Pulsed trr - Reverse Recovery Time - ns -100 IF - Diode Forward Current - A -0.1 VDS - Drain to Source Voltage - V 1000 100 -0.01 0 -0.5 -1 -1.5 VF(S-D) - Source to Drain Voltage - V di/dt = -100 A/s VGS = 0 V 10 -0.1 -1 -10 -100 IF - Diode Forward Current - A Data Sheet D18719EJ2V0DS 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2SJ687 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 Energy Derating Factor - % IAS - Single Avalanche Current - A -100 IAS = -20 A -10 EAS = 40 mJ Starting Tch = 25C VDD = -10 V RG = 25 VGS = -12 0 V -1 0.01 0.1 80 60 40 20 0 1 10 L - Inductive Load - mH 6 VDD = -10 V RG = 25 VGS = -12 0 V IAS -20 A 100 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C Data Sheet D18719EJ2V0DS 2SJ687 PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 2.30.1 1.0 TYP. 6.50.2 5.1 TYP. 4.3 MIN. 0.50.1 No Plating 1.14 MAX. 3 0.51 MIN. 2 0.8 1 6.10.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 4 No Plating 0 to 0.25 0.50.1 0.760.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D18719EJ2V0DS 7 2SJ687 * The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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