Bipolar Transistor NPN Collector 3 2 Emitter 1 Base Features: * * High Collector Sustaining Voltage : VCEO = 80V @ IC = 200mA Low Collector Emitter saturation Voltage VCE(sat) 1V @ IC = 10A Description: High power, NPN, TO-3, Silicon Transistor Designed for use in power amplifier and switching circuits applications Maximum Ratings: Characteristic Symbol Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Rating Unit 80 V Continuous Collector Current lC 20 Base Current IB 7.5 Total Device Dissipation (TC = +25C) Derate Above 25C PD 200 1.14 W mW/C Operating Junction Temperature Range, TJ Storage Temperature Range Tstg -65 to +200 C A www.element14.com www.farnell.com www.newark.com Page <1> 23/12/13 V1.1 Bipolar Transistor Electrical Characteristics (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min. Max. Unit V(BR)CEO IC = 200mA, IB = 0 80 - V ICEO VCB = 80V, IB = 0 ICEX VCE = 80V, VEB(off) = 1.5V ICBO VCB = 80V, IE = 0 IEBO VEB = 5V, IC = 0 OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current 5 - 1 mA 5 ON Characteristics ( See Note 1) DC Current Gain Collector - Emitter Saturation Voltage hFE VCE(sat) VCE = 2V, IC = 1A 40 - VCE = 2V, IC = 10A 15 60 VCE = 4V, IC = 20A 5 - IC = 10A, IB = 1A 1 IC = 15A, IB = 1.5A 1.5 IC = 20A, IB = 4A 2 IC = 10A, IB = 1A - 1.7 - V IC = 15A, IB = 1.5A 2 IC = 20A, IB = 4A 2.5 VBE(on) IC = 20A, VCE = 4V 2.5 Current Gain-Bandwidth Product fT VCE = 10V, IC = 1A, f = 1MHz 2 - MHz Small-Signal Current Gain hfe VCE = 10V, IC = 1A, f = 1kHz - 40 - Rise Time tr VCC = 30V, IC = 10A, IB1 = IB2 = 1A Storage Time ts Fall Time tf Base - Emitter Saturation Voltage Base - Emitter on Voltage VBE(sat) Small Signal Characteristics Switching Characteristics VCC = 30V, IC = 10mA, IB1 = IB2 = 1A 1 - 2 us 1 Note 1 : Pulse Test : Pulse Width % 300s, Duty Cycle % 2% www.element14.com www.farnell.com www.newark.com Page <2> 23/12/13 V1.1 Bipolar Transistor Dimensions Collector 3 2 Emitter 1 Base Min. Max. A 38.75 39.96 B 19.28 22.23 C 7.96 D 11.18 12.19 E 25.2 26.67 F 0.92 1.09 G 1.38 1.62 H 29.9 30.4 I 16.64 17.3 J 3.88 4.36 K 10.67 11.18 9.28 Dimensions : Millimetres Part Number Table Description Part Number Transistor, NPN, 20A, 80V, TO-3 2N5303 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <3> 23/12/13 V1.1